JPS6128639B2 - - Google Patents
Info
- Publication number
- JPS6128639B2 JPS6128639B2 JP11426878A JP11426878A JPS6128639B2 JP S6128639 B2 JPS6128639 B2 JP S6128639B2 JP 11426878 A JP11426878 A JP 11426878A JP 11426878 A JP11426878 A JP 11426878A JP S6128639 B2 JPS6128639 B2 JP S6128639B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- litao
- inert gas
- lithium tantalate
- cracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11426878A JPS5542238A (en) | 1978-09-14 | 1978-09-14 | Production of lithium tantalate single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11426878A JPS5542238A (en) | 1978-09-14 | 1978-09-14 | Production of lithium tantalate single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5542238A JPS5542238A (en) | 1980-03-25 |
JPS6128639B2 true JPS6128639B2 (enrdf_load_stackoverflow) | 1986-07-01 |
Family
ID=14633545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11426878A Granted JPS5542238A (en) | 1978-09-14 | 1978-09-14 | Production of lithium tantalate single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5542238A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439265A (en) * | 1981-07-17 | 1984-03-27 | Bell Telephone Laboratories, Incorporated | Fabrication method for LiNbO3 and LiTaO3 integrated optics devices |
JPS5969490A (ja) * | 1982-10-14 | 1984-04-19 | Sumitomo Metal Mining Co Ltd | タンタル酸リチウム単結晶の製造方法 |
US4724038A (en) * | 1986-06-02 | 1988-02-09 | Hughes Aircraft Company | Process for preparing single crystal binary metal oxides of improved purity |
-
1978
- 1978-09-14 JP JP11426878A patent/JPS5542238A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5542238A (en) | 1980-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4534821A (en) | Single crystal growing of rare earth-gallium garnet | |
JP2635456B2 (ja) | シリコン単結晶の引上方法 | |
US3959442A (en) | Preparing single crystals of Li(Ho,Y,Er,Tm,Dy)F4 in HF atmosphere | |
JPS62212298A (ja) | 結晶成長雰囲気を制御することによるTi:Al↓2O↓3同調可能レ−ザ結晶けい光を向上するための方法 | |
JPS6065787A (ja) | 転位のないケイ素単結晶ロツドの製造法 | |
JPS6128639B2 (enrdf_load_stackoverflow) | ||
JPS60251191A (ja) | 高解離圧化合物単結晶成長方法 | |
US4135963A (en) | Lithium tantalate single crystal growth from a platinum-rhodium crucible in an inert gas, nitrogen or reducing gas atmosphere | |
JPH02283082A (ja) | 同調可能なチタンドープ酸化物レーザー結晶の蛍光を向上させる方法 | |
CN111379014A (zh) | 一种晶体生长的助熔剂及晶体生长方法 | |
JPS63274694A (ja) | 高品質チタンサフアイヤ単結晶の製造方法 | |
JP3152322B2 (ja) | 無双晶(Nd,La)GaO3単結晶およびその製造方法 | |
JP3015552B2 (ja) | LiTaO3単結晶材料 | |
US2860998A (en) | Metal titanate composition | |
JPS59131597A (ja) | 高品質ガリウム砒素単結晶の製造方法 | |
JPH0791148B2 (ja) | シリコン単結晶引上げ用石英ルツボとその製造方法 | |
JP2507997B2 (ja) | 単結晶育成方法 | |
JP2643975B2 (ja) | シリコン単結晶 | |
JPS6369796A (ja) | Li↓2B↓4O↓7単結晶の育成方法 | |
JPS5933557B2 (ja) | Ggg単結晶を製造する方法 | |
JPH02196082A (ja) | シリコン単結晶の製造方法 | |
CN115726042A (zh) | 锑化铟晶体及其制备方法 | |
CN117210940A (zh) | 一种反铁磁单晶的生长方法 | |
JPS57170894A (en) | Manufacture of single crystal of ferrodielectic substance | |
JPS5933558B2 (ja) | Ggg単結晶を製造する方法 |