JPS61285741A - Manufacture of resin sealed type semiconductor device - Google Patents

Manufacture of resin sealed type semiconductor device

Info

Publication number
JPS61285741A
JPS61285741A JP12745085A JP12745085A JPS61285741A JP S61285741 A JPS61285741 A JP S61285741A JP 12745085 A JP12745085 A JP 12745085A JP 12745085 A JP12745085 A JP 12745085A JP S61285741 A JPS61285741 A JP S61285741A
Authority
JP
Japan
Prior art keywords
filler
resin
resin layer
sealed
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12745085A
Other languages
Japanese (ja)
Inventor
Masayuki Masuda
増田 昌之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12745085A priority Critical patent/JPS61285741A/en
Publication of JPS61285741A publication Critical patent/JPS61285741A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the damage on the surface of a chip when a semiconductor element chip is sealed with resin, by providing a double-layer structure, in which a molding resin layer, wherein filler is not included or the amount of inclusion of the filler is very small, and a molding resin layer including the filler are provided. CONSTITUTION:The surface part, which is directly contacted with a chip 1, is once sealed with a molding resin layer 6 made of a resin material, which does not include filler or includes a small possible amount of the filler. Then the surface part of the molding resin layer 6 is sealed with a molding resin layer 7 made of a resin material, which includes the filler 3 in a high density, again. Thus, the damage on the surface part of the semiconductor element chip can be prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は樹脂封止形半導体装置の製造方法に関し、特
に樹脂封止態様を改良した樹脂封止形半導体装置の製造
方法に係るものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a resin-sealed semiconductor device, and particularly relates to a method for manufacturing a resin-sealed semiconductor device with improved resin encapsulation. .

〔従来の技術〕[Conventional technology]

従来のこの種の樹脂封止形半導体装置、いわゆるプラス
チック、パッケージにおいては、第2図に示すように、
半導体素子チップ1をモールド樹脂層2によって樹脂封
止させる場合、このモールド樹脂層2の硬度を高めると
共に、その熱膨張係数を可及的にシリコンチップのそれ
にバランスさせるために、封止樹脂材料中にフィラー(
シリコン粉)3を高密度に混入させて用いるようにして
いる。なおご覧で符号4は半導体素子チップlのフレー
ムである。
In conventional resin-sealed semiconductor devices of this type, so-called plastic packages, as shown in Figure 2,
When the semiconductor element chip 1 is resin-sealed with the molding resin layer 2, in order to increase the hardness of the molding resin layer 2 and to balance its coefficient of thermal expansion with that of the silicon chip as much as possible, the encapsulating resin material is filler (
Silicon powder) 3 is mixed in at a high density for use. As you can see, the reference numeral 4 is the frame of the semiconductor element chip l.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、このような従来のプラスチックパッケー
ジ構造では、樹脂封止の際の溶融樹脂の冷却固化、なら
びに使用環境での熱サイクルにより、半導体素子チップ
1の表面にストレスを与えることが知られており、また
近年の傾向としての半導体素子チップ1に対する高集積
化9回路パターンの微細化に伴ない、特にモールド樹脂
層2内に混入されているフィラー3による圧迫は、それ
がたとえ軽微ではあっても、前記第1図のA部を拡大し
て示す第3図にみられるように、この圧迫によるストレ
ス日が、比較的硬度の高いフィラー3をチップ表面に押
付け、回路構成に局部的な損傷を与えて、不良化の原因
となり、チップの製造歩留り低下、信頼性低下を招くに
至るもので、これを回避するために従来においても、樹
脂材料の改善とか、チップ表面の保護膜強化などが図ら
れてはいるが未だ効果的な手段がなかった。
However, in such a conventional plastic package structure, it is known that stress is applied to the surface of the semiconductor element chip 1 due to cooling and solidification of the molten resin during resin sealing and thermal cycling in the usage environment. In addition, with the recent trend of miniaturization of highly integrated nine-circuit patterns for semiconductor element chips 1, the pressure caused by the filler 3 mixed in the mold resin layer 2, even if it is slight, As shown in FIG. 3, which is an enlarged view of section A in FIG. This can lead to defects, leading to lower chip manufacturing yields and lower reliability.To avoid this, efforts have been made to improve the resin material and strengthen the protective film on the chip surface. However, there are still no effective methods.

従ってこの発明の目的とするところは、従来の樹脂封止
に伴なうこのような問題点を完全に改善した樹脂封止形
半導体装置の製造方法を提供することである。
Therefore, it is an object of the present invention to provide a method for manufacturing a resin-sealed semiconductor device that completely overcomes these problems associated with conventional resin-sealing.

〔問題点を解決するための手段〕[Means for solving problems]

前記目的を達成するためにこの発明に係る樹脂封止形半
導体装置の製造方法は、まずフィラーを含有しないか、
あるいは可及的にフィラーの含有量の少ない樹脂材料を
用いた第1のモールド樹脂層により、半導体素子チップ
に直接々触する表面部分を一旦、樹脂封止させ、ついで
フィラーを含有する樹脂材料を用いた第2のモールド樹
脂層により、この第1のモールド樹脂層の表面部分を再
度、樹脂封止させるようにしたも゛のである。
In order to achieve the above object, the method for manufacturing a resin-sealed semiconductor device according to the present invention includes firstly containing no filler or
Alternatively, the surface portion that directly contacts the semiconductor element chip is once sealed with resin using a first mold resin layer using a resin material with as little filler content as possible, and then a resin material containing filler is applied. The surface portion of the first mold resin layer is again sealed with resin using the second mold resin layer used.

〔作   用〕[For production]

すなわち、この発明方法においては、半導体素子チップ
に対する樹脂封止に関して、フィラーを含有しないか、
あるいは可及的にフィラーの含有量の少ない樹脂材料に
よる第1のモールド樹脂層と、フィラーを含有する樹脂
材料による第2のモールド樹脂層との2層構造にした−
め、半導体素子チップに直接々触する表面部分を、フィ
ラーの押付けなどにより損傷するような惧れを回避でき
る。
That is, in the method of the present invention, with respect to resin sealing for semiconductor element chips, filler is not included;
Alternatively, a two-layer structure including a first mold resin layer made of a resin material with as little filler content as possible and a second mold resin layer made of a resin material containing filler is used.
Therefore, it is possible to avoid the risk of damage to the surface portion that comes into direct contact with the semiconductor element chip due to the pressing of the filler or the like.

〔実 施 例〕〔Example〕

以下、この発明に係る樹脂封止形半導体装置の製造方法
の一実施例につき、第1図を参照して詳細に説明する。
Hereinafter, one embodiment of the method for manufacturing a resin-sealed semiconductor device according to the present invention will be described in detail with reference to FIG.

この第1図実施例は前記第2図従来例に対応した装置の
樹脂封止構成を示す断面図であり、これらの各図中、同
一符号は同一または相当部分を示している。
The embodiment shown in FIG. 1 is a sectional view showing a resin-sealed structure of an apparatus corresponding to the conventional example shown in FIG.

この実施例方法においては、前記した半導体素子チップ
1に対するフィラー3の影響を除くために、まず同チッ
プ1に直接々触する表面部分に関しては、フィラーを含
有しないか、あるいは可及的にフィラーの含有量の少な
い樹脂材料による第1のモールド樹脂層8により一旦、
樹脂封止させておき、ついでこの第1のモールド樹脂y
M1Bの表面部分を、フィラー3を高密度に含有した樹
脂材料による第2のモールド樹脂層7により再度、樹脂
封止させるようにしたものである。
In this embodiment method, in order to eliminate the influence of the filler 3 on the semiconductor element chip 1 described above, first, the surface portion that directly contacts the semiconductor element chip 1 contains no filler or contains as much filler as possible. Once the first mold resin layer 8 is made of a resin material with a low content,
After sealing with resin, this first mold resin y
The surface portion of M1B is again sealed with a second mold resin layer 7 made of a resin material containing filler 3 at a high density.

従ってこの実施例方法の場合には、半導体素子チップ1
の表面部分を封止する第1のモールド樹脂層eが、フィ
ラーを含有しないか、あるいは可及的にフィラーの含有
量の少ない樹脂材料であるために、樹脂封止時、ならび
に熱サイクル負荷時にあって、フィラー3の押付けによ
るチップ表面での回路構成の損傷を回避でき、かつこの
第1のモールド樹脂層8の表面部分を、フィラー3を高
密度に含有した樹脂材料による第2のモールド樹脂層7
により再度、封止させるから、封止樹脂層の全体として
の硬度、ならびに熱膨張係数を、従来と同程度のレベル
に維持させることができるのである。
Therefore, in the case of this embodiment method, the semiconductor element chip 1
Since the first mold resin layer e that seals the surface portion of the mold does not contain filler or is made of a resin material with as little filler as possible, it is difficult to seal the surface during resin sealing and thermal cycle loading. Therefore, damage to the circuit structure on the chip surface due to the pressing of the filler 3 can be avoided, and the surface portion of the first mold resin layer 8 can be covered with a second mold resin made of a resin material containing the filler 3 at a high density. layer 7
Since the resin is sealed again, the overall hardness and coefficient of thermal expansion of the sealing resin layer can be maintained at the same level as in the past.

〔発明の効果〕〔Effect of the invention〕

以上詳述したようにこの発明方法によれば、半導体素子
チップに対する樹脂封止に関して、フィラーを含有しな
いか、あるいは可及的にフィラーの含有量の少ない樹脂
材料による第1のモールド樹脂層と、フィラーを含有す
る樹脂材料による第2のモールド樹脂層との2層構造に
したので、プラスチックパッケージの特性を何等損なう
ことなしに、フィラーの押付けなどに上るチップ表面部
分の損傷を効果的に回避でき、またこれによって製造歩
留り、ならびに信頼性が低下するような惧れもなく、シ
かも構造的、方法的にも比較的簡単で容易に実施可能で
あるなどの特長を有するものである。
As detailed above, according to the method of the present invention, regarding resin sealing of a semiconductor element chip, the first mold resin layer is made of a resin material that does not contain filler or has as little filler content as possible; Since it has a two-layer structure with a second mold resin layer made of a resin material containing filler, it is possible to effectively avoid damage to the chip surface caused by pressing the filler, etc., without impairing the properties of the plastic package. Moreover, there is no fear that manufacturing yield or reliability will be lowered thereby, and it has the advantage of being relatively simple and easy to implement in terms of structure and method.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明方法の一実施例を適用した樹脂封止形
半導体装置の概要構成を示す断面図であリ、また第2図
は従来例による同上装置の概要構成を示す断面図、第3
図は第2図A部の詳細構造を示す一部拡大断面図である
。 l・・・・半導体素子チップ、3・・・・フィラー、5
・・・・第1のモールド樹脂層、B・・・・第2のモー
ルド樹脂層。 代理人  大  岩  増  雄 第1図 第2図 第3図 手続補正書(自発) 特許庁長官殿                   
  ごへl、事件の表示   特願昭60−12743
0号2、発明の名称 樹脂封止形半導体装置の製造方法 3、補正をする者 6、補正の対象 明細書の発明の詳細な説明の欄
FIG. 1 is a sectional view showing the general structure of a resin-sealed semiconductor device to which an embodiment of the method of the present invention is applied, and FIG. 2 is a sectional view showing the general structure of the same device according to a conventional example. 3
This figure is a partially enlarged sectional view showing the detailed structure of section A in FIG. 2. l... Semiconductor element chip, 3... Filler, 5
...First mold resin layer, B...Second mold resin layer. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3 Procedural amendment (voluntary) To the Commissioner of the Japan Patent Office
Gohei, Incident Display Patent Application 1986-12743
No. 0 2, Name of the invention Method for manufacturing a resin-encapsulated semiconductor device 3, Person making the amendment 6, Detailed description of the invention in the specification to be amended

Claims (1)

【特許請求の範囲】[Claims] 半導体素子チップを樹脂封止させる半導体装置の製造に
おいて、まず前記半導体素子チップに直接々触する部分
に関しては、フィラーを含有しないか、あるいは可及的
にフィラーの含有量の少ない樹脂材料による第1のモー
ルド樹脂層により一旦、樹脂封止させ、ついでこの第1
のモールド樹脂層部分を、フィラーを含有した樹脂材料
による第2のモールド樹脂層により再度、樹脂封止させ
るようにしたことを特徴とする樹脂封止形半導体装置の
製造方法。
In the manufacture of a semiconductor device in which a semiconductor element chip is sealed with resin, firstly, the parts that directly contact the semiconductor element chip are made of a resin material that does not contain filler or has as little filler content as possible. The first mold resin layer is used to seal the resin, and then this first mold resin layer is used.
A method for manufacturing a resin-sealed semiconductor device, characterized in that the molded resin layer portion is again sealed with a second molded resin layer made of a resin material containing a filler.
JP12745085A 1985-06-12 1985-06-12 Manufacture of resin sealed type semiconductor device Pending JPS61285741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12745085A JPS61285741A (en) 1985-06-12 1985-06-12 Manufacture of resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12745085A JPS61285741A (en) 1985-06-12 1985-06-12 Manufacture of resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS61285741A true JPS61285741A (en) 1986-12-16

Family

ID=14960222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12745085A Pending JPS61285741A (en) 1985-06-12 1985-06-12 Manufacture of resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS61285741A (en)

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