JPS61283162A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS61283162A
JPS61283162A JP12433785A JP12433785A JPS61283162A JP S61283162 A JPS61283162 A JP S61283162A JP 12433785 A JP12433785 A JP 12433785A JP 12433785 A JP12433785 A JP 12433785A JP S61283162 A JPS61283162 A JP S61283162A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
word
word line
drivers
memory matrix
decoders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12433785A
Inventor
Kenji Kanamaru
Nobunari Morita
Toru Tsutsui
Original Assignee
Nippon Denso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To highly integrate a semiconductor memory device by longitudinally providing rows of word decoders and word line drivers laterally of a memory matrix, and constructing to run word lines alternately from the right and left word line drivers on a memory matrix.
CONSTITUTION: Word decoders 101, 102 and word line drivers 201, 202 are formed along the bit line 40 of a memory matrix 30. The word lines 50 corresponding to the outputs of the drivers 201, 202 run alternately on a memory matrix 30 from the right and left word line drivers 201, 202. That is, two word lines are disposed in a drive pitch for generating one word line output, the pitches of the decoders 101, 102 and the drivers 201, 202 are doubled by the pitch of the memory cell 60, i.e., the pitch of the word line 50, thereby reducing the interval between the word lines.
COPYRIGHT: (C)1986,JPO&Japio
JP12433785A 1985-06-10 1985-06-10 Semiconductor memory device Pending JPS61283162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12433785A JPS61283162A (en) 1985-06-10 1985-06-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12433785A JPS61283162A (en) 1985-06-10 1985-06-10 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS61283162A true true JPS61283162A (en) 1986-12-13

Family

ID=14882846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12433785A Pending JPS61283162A (en) 1985-06-10 1985-06-10 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS61283162A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02123596A (en) * 1988-11-02 1990-05-11 Nec Corp Semiconductor memory device
US4982372A (en) * 1988-06-16 1991-01-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having divided word or bit line drivers and operating method therefor
JPH0444695A (en) * 1990-06-12 1992-02-14 Toshiba Corp Semiconductor memory
JPH04278289A (en) * 1991-02-05 1992-10-02 Samsung Electron Co Ltd Arranging method for word line driver of semiconductor memory device
US6141269A (en) * 1991-08-30 2000-10-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device using BiCMOS technology
JP2009123252A (en) * 2007-11-12 2009-06-04 Nec Electronics Corp Semiconductor integrated circuit

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982372A (en) * 1988-06-16 1991-01-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having divided word or bit line drivers and operating method therefor
JPH02123596A (en) * 1988-11-02 1990-05-11 Nec Corp Semiconductor memory device
JPH0444695A (en) * 1990-06-12 1992-02-14 Toshiba Corp Semiconductor memory
JPH04278289A (en) * 1991-02-05 1992-10-02 Samsung Electron Co Ltd Arranging method for word line driver of semiconductor memory device
US6141269A (en) * 1991-08-30 2000-10-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device using BiCMOS technology
US6314037B1 (en) 1991-08-30 2001-11-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device using BiCMOS technology
JP2009123252A (en) * 2007-11-12 2009-06-04 Nec Electronics Corp Semiconductor integrated circuit
US8391084B2 (en) 2007-11-12 2013-03-05 Renesas Electronics Corporation Semiconductor integrated circuit
US8699284B2 (en) 2007-11-12 2014-04-15 Renesas Electronics Corporation Semiconductor integrated circuit with thick gate oxide word line driving circuit
US8797810B2 (en) 2007-11-12 2014-08-05 Renesas Electronics Corporation Semiconductor integrated circuit with thick gate oxide word line driving circuit
US9099197B2 (en) 2007-11-12 2015-08-04 Renesas Electronics Corporation Semiconductor integrated circuit with thick gate oxide word line driving circuit

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