JPS61281047A - 二酸化珪素被膜の製造方法 - Google Patents

二酸化珪素被膜の製造方法

Info

Publication number
JPS61281047A
JPS61281047A JP60123254A JP12325485A JPS61281047A JP S61281047 A JPS61281047 A JP S61281047A JP 60123254 A JP60123254 A JP 60123254A JP 12325485 A JP12325485 A JP 12325485A JP S61281047 A JPS61281047 A JP S61281047A
Authority
JP
Japan
Prior art keywords
silicon dioxide
solution
hydrosilicofluoric acid
substrate
acid solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60123254A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0585491B2 (en:Method
Inventor
Takuji Aida
拓司 合田
Hirotsugu Nagayama
永山　裕嗣
Hideo Kawahara
秀夫 河原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP60123254A priority Critical patent/JPS61281047A/ja
Publication of JPS61281047A publication Critical patent/JPS61281047A/ja
Priority to US07/580,356 priority patent/US5073408A/en
Priority to US07/647,086 priority patent/US5132140A/en
Publication of JPH0585491B2 publication Critical patent/JPH0585491B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)
  • Silicon Compounds (AREA)
JP60123254A 1985-06-06 1985-06-06 二酸化珪素被膜の製造方法 Granted JPS61281047A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60123254A JPS61281047A (ja) 1985-06-06 1985-06-06 二酸化珪素被膜の製造方法
US07/580,356 US5073408A (en) 1985-06-06 1990-09-07 Method of depositing a silicon dioxide film
US07/647,086 US5132140A (en) 1985-06-06 1991-01-29 Process for depositing silicon dioxide films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60123254A JPS61281047A (ja) 1985-06-06 1985-06-06 二酸化珪素被膜の製造方法

Publications (2)

Publication Number Publication Date
JPS61281047A true JPS61281047A (ja) 1986-12-11
JPH0585491B2 JPH0585491B2 (en:Method) 1993-12-07

Family

ID=14856019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60123254A Granted JPS61281047A (ja) 1985-06-06 1985-06-06 二酸化珪素被膜の製造方法

Country Status (2)

Country Link
US (2) US5073408A (en:Method)
JP (1) JPS61281047A (en:Method)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428377A (en) * 1987-07-23 1989-01-30 Nippon Sheet Glass Co Ltd Production of silicon dioxide film
US5114760A (en) * 1989-04-01 1992-05-19 Nippon Sheet Glass Co., Ltd. Method for manufacturing layer-built material with silicon dioxide film containing organic colorant and the layer-built material manufactured thereby
US5153035A (en) * 1990-09-29 1992-10-06 Nippon Sheet Glass Co., Ltd. Process for forming silica films
US5232781A (en) * 1989-04-01 1993-08-03 Nippon Sheet Glass Co., Ltd. Method for manufacturing layer-built material with silicon dioxide film containing organic colorant and the layer-built material manufactured thereby
US5326720A (en) * 1990-10-25 1994-07-05 Nippon Sheet Glass Co., Ltd. Method for producing silicon dioxide film which prevents escape of Si component to the environment
US5415927A (en) * 1991-10-04 1995-05-16 Nippon Sheet Glass Co., Ltd. Water-repellant glass products and process for the production thereof

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69209724T2 (de) * 1991-04-29 1996-10-10 Philips Electronics Nv Erhöhung der Diffusionsbarriere einer Metallisierungsstruktur geeignet zur Herstellung von Halbleiterbauelementen
JP2928664B2 (ja) * 1991-08-12 1999-08-03 株式会社東芝 酸化珪素成膜方法およびこの方法に用いる成膜装置
CA2131668C (en) * 1993-12-23 1999-03-02 Carol Galli Isolation structure using liquid phase oxide deposition
US5506006A (en) * 1994-05-04 1996-04-09 National Science Council Process for depositing silicon dioxide by liquid phase diposition
US5943560A (en) * 1996-04-19 1999-08-24 National Science Council Method to fabricate the thin film transistor
US5920780A (en) * 1997-01-31 1999-07-06 Mosel Vitelic Incorporated Method of forming a self aligned contact (SAC) window
US6080683A (en) * 1999-03-22 2000-06-27 Special Materials Research And Technology, Inc. Room temperature wet chemical growth process of SiO based oxides on silicon
US6593077B2 (en) 1999-03-22 2003-07-15 Special Materials Research And Technology, Inc. Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
KR20020074281A (ko) * 2001-03-19 2002-09-30 (주) 파워테크 초미세 실리카 분말의 제조방법
US6613697B1 (en) 2001-06-26 2003-09-02 Special Materials Research And Technology, Inc. Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof
EP1579490B1 (en) * 2002-11-19 2014-05-14 William Marsh Rice University Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth
US6998204B2 (en) * 2003-11-13 2006-02-14 International Business Machines Corporation Alternating phase mask built by additive film deposition
US7393779B2 (en) * 2005-10-31 2008-07-01 International Business Machines Corporation Shrinking contact apertures through LPD oxide
US9175397B2 (en) * 2010-03-15 2015-11-03 Alliance For Sustainable Energy, Llc Multilayer heterostructures and their manufacture
US20120132272A1 (en) 2010-11-19 2012-05-31 Alliance For Sustainable Energy, Llc. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells
CN103563048A (zh) * 2011-03-29 2014-02-05 奈特考尔技术公司 控制氧化硅膜厚度的方法
US9859515B2 (en) 2013-03-07 2018-01-02 Alliance For Sustainable Energy, Llc Methods for producing thin film charge selective transport layers
US9994714B2 (en) 2013-05-16 2018-06-12 Thomas E. Kane Silica protected pigments for use in artist media
CN104087913B (zh) * 2014-06-11 2017-03-22 韩冰 一种用于加速惰性硅化合物生长在衬底表面上的化学组合物
CN104465863A (zh) * 2014-07-30 2015-03-25 上饶光电高科技有限公司 一种可提高光电转换效率的多晶硅片预处理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB490662I5 (en:Method) * 1946-09-21
US2505629A (en) * 1949-06-30 1950-04-25 Rca Corp Method of depositing silica films and preparation of solutions therefor
DE3332995A1 (de) * 1983-07-14 1985-01-24 Nippon Sheet Glass Co. Ltd., Osaka Verfahren zum herstellen einer siliciumdioxidbeschichtung

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428377A (en) * 1987-07-23 1989-01-30 Nippon Sheet Glass Co Ltd Production of silicon dioxide film
US5114760A (en) * 1989-04-01 1992-05-19 Nippon Sheet Glass Co., Ltd. Method for manufacturing layer-built material with silicon dioxide film containing organic colorant and the layer-built material manufactured thereby
US5232781A (en) * 1989-04-01 1993-08-03 Nippon Sheet Glass Co., Ltd. Method for manufacturing layer-built material with silicon dioxide film containing organic colorant and the layer-built material manufactured thereby
US5153035A (en) * 1990-09-29 1992-10-06 Nippon Sheet Glass Co., Ltd. Process for forming silica films
US5326720A (en) * 1990-10-25 1994-07-05 Nippon Sheet Glass Co., Ltd. Method for producing silicon dioxide film which prevents escape of Si component to the environment
US5415927A (en) * 1991-10-04 1995-05-16 Nippon Sheet Glass Co., Ltd. Water-repellant glass products and process for the production thereof

Also Published As

Publication number Publication date
US5073408A (en) 1991-12-17
US5132140A (en) 1992-07-21
JPH0585491B2 (en:Method) 1993-12-07

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Legal Events

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EXPY Cancellation because of completion of term