JPS6127975Y2 - - Google Patents
Info
- Publication number
- JPS6127975Y2 JPS6127975Y2 JP4334782U JP4334782U JPS6127975Y2 JP S6127975 Y2 JPS6127975 Y2 JP S6127975Y2 JP 4334782 U JP4334782 U JP 4334782U JP 4334782 U JP4334782 U JP 4334782U JP S6127975 Y2 JPS6127975 Y2 JP S6127975Y2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- ampoule
- furnace
- growth furnace
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 36
- 239000003708 ampul Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910004813 CaTe Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4334782U JPS58148070U (ja) | 1982-03-26 | 1982-03-26 | 半導体結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4334782U JPS58148070U (ja) | 1982-03-26 | 1982-03-26 | 半導体結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58148070U JPS58148070U (ja) | 1983-10-05 |
| JPS6127975Y2 true JPS6127975Y2 (OSRAM) | 1986-08-20 |
Family
ID=30054440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4334782U Granted JPS58148070U (ja) | 1982-03-26 | 1982-03-26 | 半導体結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58148070U (OSRAM) |
-
1982
- 1982-03-26 JP JP4334782U patent/JPS58148070U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58148070U (ja) | 1983-10-05 |
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