JPS6127360B2 - - Google Patents

Info

Publication number
JPS6127360B2
JPS6127360B2 JP7433883A JP7433883A JPS6127360B2 JP S6127360 B2 JPS6127360 B2 JP S6127360B2 JP 7433883 A JP7433883 A JP 7433883A JP 7433883 A JP7433883 A JP 7433883A JP S6127360 B2 JPS6127360 B2 JP S6127360B2
Authority
JP
Japan
Prior art keywords
raw material
substrate
crucible
melt
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7433883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59199599A (ja
Inventor
Akinori Katsui
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7433883A priority Critical patent/JPS59199599A/ja
Publication of JPS59199599A publication Critical patent/JPS59199599A/ja
Publication of JPS6127360B2 publication Critical patent/JPS6127360B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7433883A 1983-04-27 1983-04-27 液相エピタキシヤル成長装置 Granted JPS59199599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7433883A JPS59199599A (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7433883A JPS59199599A (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS59199599A JPS59199599A (ja) 1984-11-12
JPS6127360B2 true JPS6127360B2 (cg-RX-API-DMAC7.html) 1986-06-25

Family

ID=13544230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7433883A Granted JPS59199599A (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS59199599A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS59199599A (ja) 1984-11-12

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