JPS61266575A - Substrate stuck with thin tin nitride film and its production - Google Patents
Substrate stuck with thin tin nitride film and its productionInfo
- Publication number
- JPS61266575A JPS61266575A JP10800885A JP10800885A JPS61266575A JP S61266575 A JPS61266575 A JP S61266575A JP 10800885 A JP10800885 A JP 10800885A JP 10800885 A JP10800885 A JP 10800885A JP S61266575 A JPS61266575 A JP S61266575A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- substrate
- thin film
- tin nitride
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は可視域でブロードな吸収特性をもち、且つエレ
クトロクロミック材料として有望な窒化錫薄膜付着基板
、及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a tin nitride thin film-deposited substrate that has broad absorption characteristics in the visible range and is promising as an electrochromic material, and a method for manufacturing the same.
従来の技術
従来、窒化鋼を形成する方法として、減圧された窒素ガ
ス中に錫電極と銅電極とを設け、その間。Conventional technology Conventionally, as a method of forming nitrided steel, a tin electrode and a copper electrode are placed in a reduced pressure nitrogen gas, and a tin electrode and a copper electrode are placed between them.
にアーク放電を起し、生じた窒素イオンを電[Mの電界
によって加速し、そして錫電極に衝突させることによっ
て、錫電極表面に窒化鋼を形成したものが知られている
。There is a known method in which nitrided steel is formed on the surface of a tin electrode by causing an arc discharge, accelerating the generated nitrogen ions by an electric field, and causing them to collide with a tin electrode.
発明が解決しようとする問題点
このような方法で作られた窒化鋼は均一な組成のものが
得られないので物理的性質が一定しない上、任意の基板
上に形成することはできない欠点があった。Problems to be Solved by the Invention The nitrided steel made by this method cannot have a uniform composition, so its physical properties are not constant, and it has the disadvantage that it cannot be formed on any substrate. Ta.
本発明は透明な基板表面に均一な組成の窒化錫薄膜を付
着させる方法を提供すると共に、可視域テフロードな吸
収特性をもち、且つエレクトロクロミック材料として好
適な窒化錫薄膜付着基板を提供する。The present invention provides a method for depositing a tin nitride thin film with a uniform composition on the surface of a transparent substrate, and also provides a tin nitride thin film-deposited substrate that has Teflon absorption characteristics in the visible region and is suitable as an electrochromic material.
問題点を解決するための手段
本発明は透明基板表面に5ooX乃至sooogの厚み
の窒化錫薄膜を付着させてなる窒化錫薄膜付着基板であ
る。更に本発明は減圧された窒素ガス中で放電を生じさ
せて、イオン化又は活性化した窒素雰囲気を生じさせ、
該雰囲気中で錫を蒸発させ、該雰囲気中におかれた透明
基板表面に窒化錫薄膜を形成する窒化錫薄膜付着基板の
製造方法である。Means for Solving the Problems The present invention is a tin nitride thin film-adhered substrate, which is formed by depositing a tin nitride thin film with a thickness of 5ooX to sooog on the surface of a transparent substrate. Furthermore, the present invention produces an ionized or activated nitrogen atmosphere by generating a discharge in a reduced pressure nitrogen gas,
This is a method for manufacturing a substrate to which a tin nitride thin film is attached, in which tin is evaporated in the atmosphere and a tin nitride thin film is formed on the surface of the transparent substrate placed in the atmosphere.
作 用
本発明は透明な基板に5ooh乃至!0OOAの厚みの
窒化錫薄膜を付着することにより、可視光域でブロード
な光吸収をもつことができる。Function: The present invention can be applied to a transparent substrate of 500 to 500 mm! By depositing a tin nitride thin film with a thickness of 0OOA, it is possible to have broad light absorption in the visible light range.
また本発明はイオン化又は活性化した窒素雰囲気で、錫
を蒸発させ、錫と窒素ガスを反応させて、基板上に窒化
鋼の薄膜を付着させるものであり、均一な組成の窒化錫
薄膜を形成される。In addition, the present invention evaporates tin in an ionized or activated nitrogen atmosphere and reacts the tin with nitrogen gas to deposit a thin film of nitride steel on a substrate, forming a tin nitride thin film with a uniform composition. be done.
実施例
以下、本発明の実施例について図面を引用して詳述する
。真空ベルシア/内には錫を蒸発すべきるつぼコがある
。このるつぼコの上部には、フィラメント3が取り付け
られである。該フィラメントはタングステンあるいはモ
リブデン線などで作られ、熱電子を放出する。EXAMPLES Hereinafter, examples of the present invention will be described in detail with reference to the drawings. Inside the vacuum Versier is a crucible in which tin is to be evaporated. A filament 3 is attached to the top of this crucible. The filament is made of tungsten or molybdenum wire and emits thermoelectrons.
該フィラメントに向い合って設置されている陽極電極t
は熱電子を加速し集成するためのもので、正の直流電圧
が印加される。該るつぼ2の真上でしかも該フィラメン
トより上部に基板夕な設置する。該真空ベルジュア/に
はN2ガス導入管6が接続されている。An anode electrode t installed facing the filament
is for accelerating and concentrating hot electrons, and a positive DC voltage is applied. A substrate is placed directly above the crucible 2 and above the filament. A N2 gas introduction pipe 6 is connected to the vacuum verdure/.
真空ベルジュアl内を/ X / 0−5torr以下
に排気した後、N2ガスを導入し、真空ベルシェアl内
を10−4〜/ 0−1torrの圧力にする。次に錫
の入ったるつぼコを加熱し、銅を蒸発させる。また、フ
ィラメント3も加熱し、熱電子を放出させる。After evacuating the inside of the vacuum bell share l to / Next, the tin crucible is heated to evaporate the copper. Furthermore, the filament 3 is also heated to emit thermoelectrons.
この状態で陽極を極tに正の直流電圧を印加し、熱電子
を加速し、錫原子および窒素ガスに衝突させ、それらを
イオン化又は活性化させる。イオン化あるいは活性化さ
れた物質は反応性が高く、両者は反応して窒化鋼となり
基板上に堆積し、膜を形成する。In this state, a positive DC voltage is applied to the anode at pole t to accelerate the hot electrons and cause them to collide with tin atoms and nitrogen gas, ionizing or activating them. The ionized or activated substances are highly reactive, and the two react to form nitrided steel, which is deposited on the substrate to form a film.
イオン化あるいは活性化には20V以上の直流電圧が必
要である。また蒸着速度が/〜乙A、/S e c の
範囲で成膜が可能である。Ionization or activation requires a DC voltage of 20 V or more. Further, film formation is possible at a deposition rate of / to A, /Sec.
基板に/m厚のソーダライムガラスを用い、窒素圧カフ
、Ox/ 0−3tOrr 、イオン化電力JOVX/
、fl)A 、基板温度100°C−/20”CI)条
件で膜厚3000にの窒化錫膜を作成した。膜の色は、
かすかに紫がかったベージュ色となった。分光透過 弘
率は第2図に示すとうりで、300nmから6oonm
にかけてブロードな光吸収があった。Using soda lime glass with a thickness of /m for the substrate, nitrogen pressure cuff, Ox / 0-3tOrr, ionization power JOVX /
A tin nitride film with a thickness of 3000 was created under the conditions of , fl)A, substrate temperature of 100°C-/20'' CI).The color of the film was as follows.
It turned a beige color with a slight purplish tinge. The spectral transmission ratio is as shown in Figure 2, from 300nm to 6oonm.
There was broad light absorption throughout the period.
実施例では窒素や錫のイオン化あるいは活性化に直流放
電を利用しているが、高周波やマイロ波を利用してもよ
い。また、実施例では基板としてソーダライムガラスを
朋いたが、本発明の蒸着方法では、基板を750℃以下
に保てるので、プラスチック、アクリル板等の有機樹脂
の基板も使用できる。この場合、窒化錫薄膜は強硬であ
るので、巳
保護膜としての機能きもつ。In the embodiment, direct current discharge is used to ionize or activate nitrogen and tin, but high frequency waves or microwaves may also be used. Further, although soda lime glass was used as the substrate in the embodiment, since the substrate can be kept at 750° C. or lower in the vapor deposition method of the present invention, organic resin substrates such as plastic and acrylic plates can also be used. In this case, since the tin nitride thin film is strong, it also functions as a protective film.
発明の効果
本発明は透明な基板に5ooh乃至!;0OOILの厚
みの窒化錫薄膜を付着することにより、可視光域でブロ
ードな光吸収をもつエレクトロクロミック材料を得るこ
とができる。Effects of the Invention The present invention can be applied to a transparent substrate of 500~! By depositing a tin nitride thin film with a thickness of 0OOIL, an electrochromic material having broad light absorption in the visible light region can be obtained.
また本発明はイオン化又は活性化した窒素雰囲気中で錫
を蒸発させ、錫と窒素ガスとを反応させることにより、
基板上に均一な組成の窒化鋼の薄膜を付着させることが
できる。In addition, the present invention evaporates tin in an ionized or activated nitrogen atmosphere and reacts tin with nitrogen gas.
A thin film of nitrided steel of uniform composition can be deposited on a substrate.
図面は本発明の実施例を示すものであって第1図は窒化
錫薄膜付着装置の概念図、第2図は窒化錫薄膜の分光透
過率を示すグラフである。
/:真空ベルジュア、コニ るつぼ。
3: フィラメント、11:@極電極。
!: 基 板 、乙: ガス導入管
第2図
楓L (nm)The drawings show an embodiment of the present invention, and FIG. 1 is a conceptual diagram of a tin nitride thin film deposition apparatus, and FIG. 2 is a graph showing the spectral transmittance of the tin nitride thin film. /: Vacuum Beljua, Koni Crucible. 3: filament, 11: @polar electrode. ! : Substrate, Otsu: Gas introduction pipe Figure 2 Kaede L (nm)
Claims (2)
窒化錫薄膜を付着させてなる窒化錫薄膜付着基板。(1) A tin nitride thin film-attached substrate, which is formed by depositing a tin nitride thin film with a thickness of 500 Å to 5000 Å on the surface of a transparent substrate.
ン化又は活性化した窒素雰囲気を生じさせ、該雰囲気中
で錫を蒸発させ、該雰囲気中におかれた透明基板表面に
窒化錫薄膜を形成する窒化錫薄膜付着基板の製造方法。(2) Generate a discharge in a reduced pressure nitrogen gas to create an ionized or activated nitrogen atmosphere, evaporate tin in the atmosphere, and form a tin nitride thin film on the surface of the transparent substrate placed in the atmosphere. A method for manufacturing a substrate with a tin nitride thin film attached thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10800885A JPS61266575A (en) | 1985-05-20 | 1985-05-20 | Substrate stuck with thin tin nitride film and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10800885A JPS61266575A (en) | 1985-05-20 | 1985-05-20 | Substrate stuck with thin tin nitride film and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61266575A true JPS61266575A (en) | 1986-11-26 |
Family
ID=14473648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10800885A Pending JPS61266575A (en) | 1985-05-20 | 1985-05-20 | Substrate stuck with thin tin nitride film and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61266575A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0697119A1 (en) * | 1993-11-12 | 1996-02-21 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
-
1985
- 1985-05-20 JP JP10800885A patent/JPS61266575A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0697119A1 (en) * | 1993-11-12 | 1996-02-21 | Ppg Industries, Inc. | Iridium oxide film for electrochromic device |
EP0697119A4 (en) * | 1993-11-12 | 1996-06-19 | Ppg Industries Inc | Iridium oxide film for electrochromic device |
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