JP2529220B2 - Method for producing sulfide phosphor film - Google Patents
Method for producing sulfide phosphor filmInfo
- Publication number
- JP2529220B2 JP2529220B2 JP61238363A JP23836386A JP2529220B2 JP 2529220 B2 JP2529220 B2 JP 2529220B2 JP 61238363 A JP61238363 A JP 61238363A JP 23836386 A JP23836386 A JP 23836386A JP 2529220 B2 JP2529220 B2 JP 2529220B2
- Authority
- JP
- Japan
- Prior art keywords
- sulfide
- substrate
- phosphor film
- sulfide phosphor
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 29
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims description 2
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 2
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- NKBSIBTVPNHSIK-UHFFFAOYSA-N 2,3-dichloro-6,7-dimethylquinoxaline Chemical compound ClC1=C(Cl)N=C2C=C(C)C(C)=CC2=N1 NKBSIBTVPNHSIK-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、硫化物蛍光体膜の製造方法に関し、とくに
EL素子用の蛍光体膜に適した、発光輝度や効率の優れた
硫化物蛍光体膜の製造方法に関するものである 従来の技術 近年、ZnS:MnやSrS:Ceなどの、硫化物蛍光体膜はEL素
子用の蛍光体膜として用いるため、広く研究されてい
る。これはEL素子の発光輝度や効率が蛍光体膜の特性に
よりほぼ決定されるためである。このような蛍光体膜は
主に真空蒸着法やスパッタリング法（特開昭60−116935
号公報参照）で形成されているが、より優れた特性の蛍
光体膜が再現性良く容易に形成できる製造方法の開発が
望まれている。TECHNICAL FIELD The present invention relates to a method for producing a sulfide phosphor film, and in particular,
The present invention relates to a method for manufacturing a sulfide phosphor film having excellent emission brightness and excellent efficiency, which is suitable for a phosphor film for an EL device. Conventional technology In recent years, sulfide phosphor films such as ZnS: Mn and SrS: Ce Has been widely studied because it is used as a phosphor film for EL devices. This is because the emission brightness and efficiency of the EL element are almost determined by the characteristics of the phosphor film. Such a phosphor film is mainly formed by a vacuum deposition method or a sputtering method (Japanese Patent Laid-Open No. 60-116935).
However, it is desired to develop a manufacturing method capable of easily forming a phosphor film having more excellent characteristics with good reproducibility.
発明が解決しようとする問題点 真空蒸着法やスパッタリング法で硫化物蛍光体膜を形
成した場合、真空容器内の残留ガスや水分の影響により
薄膜中に酸素が0.1〜１％程度混入することがあり、そ
のため発光特性が低下することが判明した。またアルカ
リ土類硫化物蛍光体膜においては、酸素の混入により発
光スペクトルが大きく変化するという問題点があった。
これらを解決するため、硫化水素や二硫化炭素雰囲気中
で真空蒸着やスパッタリングを行うことにより、硫化物
薄膜中の酸素濃度を減少させることがある程度可能であ
るが、硫化性ガスを用いるため薄膜形成装置が腐食され
るという問題点があった。Problems to be Solved by the Invention When a sulfide phosphor film is formed by a vacuum vapor deposition method or a sputtering method, 0.1 to 1% of oxygen may be mixed in the thin film due to the influence of residual gas and moisture in the vacuum container. Therefore, it was found that the light emission characteristics were deteriorated. Further, in the alkaline earth sulfide phosphor film, there is a problem that the emission spectrum is greatly changed due to the incorporation of oxygen.
In order to solve these problems, it is possible to reduce the oxygen concentration in the sulfide thin film to some extent by performing vacuum deposition or sputtering in a hydrogen sulfide or carbon disulfide atmosphere. There was a problem that the device was corroded.
問題点を解決するための手段 １個あるいは複数個の蒸発源、および基板が配置され
た真空容器内に水素ガスを導入し、前記水素ガスを、前
記蒸発源と前記基板との間で、マイクロ波放電によりプ
ラズマ化するとともに、前記蒸発源から硫化物蛍光体、
あるいは硫化物と活性物質とを蒸発させ、前記基板上に
堆積させる。Means for Solving the Problems Hydrogen gas is introduced into a vacuum container in which one or a plurality of evaporation sources and a substrate are arranged, and the hydrogen gas is supplied between the evaporation source and the substrate in a micro Along with plasma generation by wave discharge, sulfide phosphor from the evaporation source,
Alternatively, the sulfide and the active substance are evaporated and deposited on the substrate.
作用 本発明の製造方法によれば、基板表面に硫化物薄膜が
堆積する際、マイクロ波放電により生じた水素イオンや
水素ラジカルが基板表面に射突し、残留ガスや水分によ
る硫化物薄膜の酸化や汚染を防ぐことが可能となった。
またマイクロ波放電によれば、１×10-3トール以下、５
×10-6トール以上の低い圧力で水素ガスの活性化が可能
であり、透明度の高い優れた結晶性の硫化物蛍光体膜の
製造が可能となった。Effect According to the manufacturing method of the present invention, when a sulfide thin film is deposited on the surface of a substrate, hydrogen ions and hydrogen radicals generated by microwave discharge impinge on the surface of the substrate, and the sulfide thin film is oxidized by residual gas and moisture. It became possible to prevent pollution.
Also, according to microwave discharge, 1 × 10 −3 Torr or less, 5
Hydrogen gas can be activated at a low pressure of × 10 -6 Torr or more, and it is possible to produce a highly transparent and excellent crystalline sulfide phosphor film.
実施例 図は本発明の硫化物蛍光体膜の製造方法において用い
た薄膜形成装置の１つの形態を示す。金属製容器１は、
真空排気系11により内部を真空にすることができる。金
属製容器１の内部には、基板加熱ヒーター４が埋め込ま
れた基板保持具２、基板３、シャッター８、水冷ジャケ
ット６に保持された磁界発生装置５、２つの電子ビーム
加熱蒸発源7a,7bなどが設置されている。磁界発生装置
５は、サマリウム、コバルト、鉄、銅などを主成分とす
るドーナツ状の希土類磁石であり、外径200mm、内径120
mm、厚さ35mmの形状を有し、中心部の磁束密度は約900
ガウスであった。この磁界発生装置５により生ずる磁界
は、基板３の表面や金属製容器１の底面へ向かって発散
する。磁界発生装置５は、基板３の下方100mmの位置に
保持した。金属製容器１の側面にはマイクロ波導入窓９
を設置し、発振器13により発生させた2.45GHzの電磁波
を、電力計12を介して導波管14によりマイクロ波導入窓
９から金属製容器１へ導入した。マイクロ波導入窓９の
位置は特別に限定されるものではないが、マイクロ波導
入窓９の直前に金属製の遮蔽物がない所が望ましい。さ
らに金属製容器１の上部にはガス導入口10を設置した。Example FIG. 1 shows one form of a thin film forming apparatus used in the method for producing a sulfide phosphor film of the present invention. The metal container 1
The vacuum exhaust system 11 can evacuate the inside. Inside the metal container 1, a substrate holder 2 in which a substrate heater 4 is embedded, a substrate 3, a shutter 8, a magnetic field generator 5 held by a water cooling jacket 6, and two electron beam heating evaporation sources 7a, 7b. Have been installed. The magnetic field generator 5 is a doughnut-shaped rare earth magnet whose main components are samarium, cobalt, iron, copper, etc., and has an outer diameter of 200 mm and an inner diameter of 120.
mm, thickness 35 mm, magnetic flux density at the center is about 900
It was Gauss. The magnetic field generated by the magnetic field generator 5 diverges toward the surface of the substrate 3 and the bottom surface of the metal container 1. The magnetic field generator 5 was held at a position 100 mm below the substrate 3. A microwave introduction window 9 is provided on the side surface of the metal container 1.
Was installed, and the electromagnetic wave of 2.45 GHz generated by the oscillator 13 was introduced into the metal container 1 from the microwave introduction window 9 by the waveguide 14 via the power meter 12. The position of the microwave introduction window 9 is not particularly limited, but it is desirable that there is no metallic shield immediately in front of the microwave introduction window 9. Further, a gas inlet 10 was installed on the top of the metal container 1.
この装置を用いてユーロピウム添加硫化カルシウムの
薄膜を形成する場合について説明する。電子ビーム加熱
蒸発源7a,7bにそれぞれ、硫化カルシウムペレット、お
よび硫化ユーロピウムペレットをセットする。金属製容
器１を10-7トールまで排気後、ガス導入口10より水素ガ
スを導入し、圧力を１×10-4トールとする。発振器13を
動作させ、所望のマイクロ波電力を印加し、磁界発生装
置５の近傍に水素プラズマを形成する。電子ビーム加熱
蒸発源7a,7bに通電し、硫化カルシウムと硫化ユーロピ
ウムの割合が1000:1となるように堆積速度を制御した後
シャッター８を開き蒸着を開始する。所望の厚さのユー
ロピウム添加硫化カルシウムの薄膜を形成した後、シャ
ッター８を閉じ蒸着を終了する。A case of forming a thin film of europium-added calcium sulfide using this apparatus will be described. Calcium sulfide pellets and europium sulfide pellets are set in the electron beam heating evaporation sources 7a and 7b, respectively. After evacuating the metal container 1 to 10 -7 Torr, hydrogen gas is introduced from the gas inlet 10 to a pressure of 1 × 10 -4 Torr. The oscillator 13 is operated to apply a desired microwave power to form hydrogen plasma in the vicinity of the magnetic field generator 5. The electron beam heating evaporation sources 7a and 7b are energized, the deposition rate is controlled so that the ratio of calcium sulfide and europium sulfide is 1000: 1, and then the shutter 8 is opened to start vapor deposition. After forming a thin film of europium-added calcium sulfide having a desired thickness, the shutter 8 is closed and the vapor deposition is completed.
マイクロ波電力を150W、堆積速度を1nm/s、基板温度
を400℃として、600nmの厚さのユーロピウム添加硫化カ
ルシウムの薄膜を形成したところ、付着力が高く、ピン
ホールがほとんど無い結晶性の優れた薄膜が形成でき
た。以上で説明した硫化物蛍光体膜の製造方法により、
透明電極および厚さ500nmのチタン酸ストロンチウム誘
電体層が順次形成されたガラス基板上に、厚さ600nmの
ユーロピウム添加硫化カルシウムの薄膜を形成し、さら
にその上に厚さ200nmのタンタル酸バリウム誘電体層お
よびAl電極を順次形成しEL素子を作成した。この素子は
100fL以上の輝度で赤色に発光した。また蛍光体膜を形
成する際、水素ガスを１×10-4トールの圧力に導入し、
マイクロ波電力を印加せず、放電を起こすことなく形成
した場合、その発光輝度は約50FLであり、本発明の方法
と比較して約半分であった。A microwave power of 150 W, a deposition rate of 1 nm / s, a substrate temperature of 400 ° C. and a 600 nm thick europium-doped calcium sulfide thin film were formed. A thin film was formed. By the method for manufacturing a sulfide phosphor film described above,
A 600 nm thick europium-doped calcium sulfide thin film is formed on a glass substrate on which a transparent electrode and a 500 nm thick strontium titanate dielectric layer are sequentially formed. An EL device was prepared by sequentially forming layers and Al electrodes. This element
It emitted red light with a brightness of 100 fL or more. When forming the phosphor film, hydrogen gas was introduced at a pressure of 1 × 10 −4 Torr,
When formed without applying microwave power and without causing discharge, the emission brightness was about 50 FL, which was about half that of the method of the present invention.
水素ガス圧としては、１×10-3トールより高い場合、
蛍光体膜が少し白濁しスムーズな表面が得られにくく、
５×10-6トールより低い場合、マイクロ波放電が発生せ
ず、優れた特性の蛍光体膜を形成することができなかっ
た。If the hydrogen gas pressure is higher than 1 × 10 -3 Torr,
The phosphor film is a little cloudy and it is difficult to obtain a smooth surface.
When it was lower than 5 × 10 −6 Torr, microwave discharge did not occur and a phosphor film having excellent characteristics could not be formed.
磁界発生装置５は、基板３の表面近傍に、基板面に垂
直な方向の磁力線が生じるように配置したが、これはプ
ラズマ中の電子が電力線に添って移動し、移動した電子
に引かれてイオンも移動するという性質を利用し、基板
表面にイオンが効率的に照射されるためである。しかし
基板面に平行な成分の磁力線のみの場合でも、イオンや
他の活性種（励起原子や励起分子など）を、拡散の効果
により、基板表面へ射突させることが可能であり、付着
力や品質の向上に効果が見られた。The magnetic field generator 5 was arranged in the vicinity of the surface of the substrate 3 so that magnetic force lines in a direction perpendicular to the substrate surface were generated. This is because electrons in plasma move along with power lines and are attracted by the moved electrons. This is because the surface of the substrate is efficiently irradiated with the ions by utilizing the property that the ions also move. However, even in the case of only the magnetic field lines of the component parallel to the substrate surface, it is possible to project ions or other active species (excited atoms or excited molecules) to the substrate surface due to the effect of diffusion, and the adhesive force or The effect was seen to improve the quality.
磁界発生装置として希土類磁石を用いたが、電磁石を
用いても同様の効果が得られることはもちろんである。
しかし、電磁石で希土類磁石と同等の磁界強度を発生さ
せるには装置が大きくなり、構成も若干複雑になるとい
う欠点がある。磁界発生部の中心での磁束密度は150ガ
ウス以上あれば、容易に蒸発粒子や導入ガスをイオン化
あるいは活性化することができた。Although the rare earth magnet is used as the magnetic field generator, the same effect can be obtained by using an electromagnet.
However, in order to generate a magnetic field strength equivalent to that of a rare earth magnet with an electromagnet, there is a drawback that the device becomes large and the configuration becomes slightly complicated. If the magnetic flux density at the center of the magnetic field generation area was 150 Gauss or more, the vaporized particles and the introduced gas could be easily ionized or activated.
以上の実施例では、ユーロピウム添加硫化カルシウム
からなる蛍光体膜の製造方法について説明したが、その
他の硫化亜鉛、硫化ストロンチウム、硫化バリウムなど
を主成分とする蛍光体膜についても同様の高品質膜が得
られた。In the above examples, the method for manufacturing a phosphor film made of europium-added calcium sulfide was described, but similar high-quality films can be obtained for other zinc sulfide, strontium sulfide, and barium sulfide phosphor-based phosphor films. Was obtained.
発明の効果 本発明の製造方法によれば、付着力や品質が優れた硫
化物蛍光体膜を、製造装置を劣化、腐食させることな
く、再現性良く製造することが可能であり実用的価値は
高い。EFFECTS OF THE INVENTION According to the production method of the present invention, it is possible to produce a sulfide phosphor film having excellent adhesiveness and quality with good reproducibility without degrading or corroding the production apparatus, and it is of practical value. high.
図は本発明の製造方法の１実施例において用いた薄膜形
成装置の断面図である。 １……金属製容器、２……基板保持具、３……基板、４
……基板加熱ヒーター、５……磁界発生装置、６……水
冷ジャケット、7a、7b……電子ビーム加熱蒸発源、８…
…シャッター、９……マイクロ波導入窓、10……ガス導
入口、11……真空排気系、12……電力計、13……発振
器、14……導波管。The drawing is a cross-sectional view of a thin film forming apparatus used in one embodiment of the manufacturing method of the present invention. 1 ... Metal container, 2 ... Substrate holder, 3 ... Substrate, 4
... Substrate heating heater, 5 ... Magnetic field generator, 6 ... Water cooling jacket, 7a, 7b ... Electron beam heating evaporation source, 8 ...
… Shutter, 9 …… Microwave introduction window, 10 …… Gas inlet, 11 …… Vacuum exhaust system, 12 …… Power meter, 13 …… Oscillator, 14 …… Waveguide.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤田 洋介 門真市大字門真1006番地 松下電器産業 株式会社内 (72)発明者 松岡 富造 門真市大字門真1006番地 松下電器産業 株式会社内 (72)発明者 阿部 惇 門真市大字門真1006番地 松下電器産業 株式会社内 (56)参考文献 特開 昭61−171087（ＪＰ，Ａ) 特開 昭58−157886（ＪＰ，Ａ) 特開 昭61−104585（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yosuke Fujita 1006 Kadoma, Kadoma-shi, Matsushita Electric Industrial Co., Ltd. Abe Atsushi Kadoma City 1006 Kadoma, Matsushita Electric Industrial Co., Ltd. (56) Reference JP 61-171087 (JP, A) JP 58-157886 (JP, A) JP 61-104585 (JP, A)
Claims (6)
が配置された真空容器内に水素ガスを導入し、前記水素
ガスを、前記蒸発源と前記基板との間で、マイクロ波放
電によりプラズマ化するとともに、前記蒸発源から硫化
物蛍光体、あるいは硫化物と活性物質とを蒸発させ、前
記基板上に堆積させることを特徴とする硫化物蛍光体膜
の製造方法。1. A hydrogen gas is introduced into a vacuum container in which one or a plurality of evaporation sources and a substrate are arranged, and the hydrogen gas is discharged between the evaporation source and the substrate by microwave discharge. A method for producing a sulfide phosphor film, which comprises plasmatizing and vaporizing a sulfide phosphor, or a sulfide and an active substance, from the evaporation source and depositing them on the substrate.
×10-6トール以上であることを特徴とする特許請求の範
囲第１項に記載の硫化物蛍光体膜の製造方法。2. The pressure of hydrogen gas is 1 × 10 −3 Torr or less, 5
The method for producing a sulfide phosphor film according to claim 1, characterized in that it is not less than × 10 -6 torr.
けられ、真空容器内に磁界発生装置が設けられているこ
とを特徴とする特許請求の範囲第１項に記載の硫化物蛍
光体膜の製造方法。3. A sulfide phosphor according to claim 1, wherein a microwave introduction window is provided on a wall surface of the vacuum container, and a magnetic field generator is provided in the vacuum container. Membrane manufacturing method.
方向の磁力線が生ずるように磁界発生装置が配置されて
いることを特徴とする特許請求の範囲第１項、または第
３項に記載の硫化物蛍光体膜の製造方法。4. The magnetic field generating device is arranged on the surface of the substrate so that magnetic force lines in a direction perpendicular to the surface of the substrate are generated, and the magnetic field generating device according to claim 1 or 3. Method for producing sulfide phosphor film of the above.
は中空コイルからなる電磁石で構成されていることを特
徴とする特許請求の範囲第３項、または第４項に記載の
硫化物蛍光体膜の製造方法。5. The sulfide phosphor according to claim 3 or 4, wherein the magnetic field generator comprises a hollow permanent magnet or an electromagnet formed of a hollow coil. Membrane manufacturing method.
ュウム、硫化ストロンチウム、または硫化バリウムを主
成分とすることを特徴とする特許請求の範囲第１項に記
載の硫化物蛍光体膜の製造方法。6. The sulfide phosphor film according to claim 1, wherein the sulfide phosphor film contains zinc sulfide, calcium sulfide, strontium sulfide, or barium sulfide as a main component. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238363A JP2529220B2 (en) | 1986-10-07 | 1986-10-07 | Method for producing sulfide phosphor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238363A JP2529220B2 (en) | 1986-10-07 | 1986-10-07 | Method for producing sulfide phosphor film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6394594A JPS6394594A (en) | 1988-04-25 |
| JP2529220B2 true JP2529220B2 (en) | 1996-08-28 |
Family
ID=17029074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61238363A Expired - Lifetime JP2529220B2 (en) | 1986-10-07 | 1986-10-07 | Method for producing sulfide phosphor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2529220B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0834126B2 (en) * | 1988-08-22 | 1996-03-29 | 松下電器産業株式会社 | Phosphor thin film manufacturing method and thin film EL device |
| US20130171903A1 (en) * | 2012-01-03 | 2013-07-04 | Andrew Zsinko | Electroluminescent devices and their manufacture |
-
1986
- 1986-10-07 JP JP61238363A patent/JP2529220B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6394594A (en) | 1988-04-25 |
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