JPS61260633A - Mask alignment method in photolithography process - Google Patents

Mask alignment method in photolithography process

Info

Publication number
JPS61260633A
JPS61260633A JP60101614A JP10161485A JPS61260633A JP S61260633 A JPS61260633 A JP S61260633A JP 60101614 A JP60101614 A JP 60101614A JP 10161485 A JP10161485 A JP 10161485A JP S61260633 A JPS61260633 A JP S61260633A
Authority
JP
Japan
Prior art keywords
layer
contact
glass mask
warp
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60101614A
Other languages
Japanese (ja)
Inventor
Masabumi Suzuki
正文 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60101614A priority Critical patent/JPS61260633A/en
Publication of JPS61260633A publication Critical patent/JPS61260633A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To prevent a layer to be exposed from coming in contact with a glass mask to be caused by generation of a warp by a method wherein spacers provided having fixed thickness at vacant spaces of the pattern formed surface of the glass mask are made to come in contact with the surface of the layer to be exposed. CONSTITUTION:When a photo resist layer 15 on a head substrate 14 is to be exposed using a glass mask 11, the glass mask 11 is put on the layer 15 as to make a pattern 12 to be put on the layer 15 side, and as to make the tips of spacers 13 to come in contact with the layer 15. The mask 11 is arranged on the layer 15 interposing an interval corresponding to the spacer 13 between them, and moreover the interval is regulated to a fixed interval according to the spacers 13. Moreover, when a warp is generated to the head substrate 14, the substrate 14 is corrected flat by applying pressure according to the spacers 13 coming in contact with the protruding part of the warp. Accordingly, coming in contact of the photo resist layer with the glass mask to be caused by the warp of the head substrate is checked.

Description

【発明の詳細な説明】 （産業上の利用分野） この発明ハ、サーマルヘッドの製造方法などで用いられ
るホトリソ工程におけるマスクアライメント方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a mask alignment method in a photolithography process used in a method of manufacturing a thermal head.

（従来の技術） 例えばサーマルヘッドの製造に際しては、その製造工程
の１つとしてホトリソ工程が存在する。(Prior Art) For example, when manufacturing a thermal head, a photolithography process exists as one of the manufacturing processes.

そのホトリソ工程において、マスクアライメント方法と
しては、従来、コンタクト方法とノンコンタクト方法が
あった。第２図はコンタクト方法を示し、ヘッド基板１
上のホトレジスト層（被露光層）２に、パターン４を有
するガラスマスク３を密着させる方法である。第３図は
、馬場文武「最新・電子デバイス事典」（昭５１−３−
２０　）ラジオ技術社Ｐ、　２１０にも開示されるよう
なノンコンタクト方法を示し、ヘッド基板ｌ上のホトレ
ジスト層２上に、間隔を設けてガラスマスク３を配置す
る方法である。In the photolithography process, conventional mask alignment methods include a contact method and a non-contact method. Figure 2 shows the contact method and shows the head substrate 1.
This is a method in which a glass mask 3 having a pattern 4 is brought into close contact with the upper photoresist layer (layer to be exposed) 2. Figure 3 is from Fumitake Baba's "Latest Electronic Device Encyclopedia" (Sho 51-3-
20) A non-contact method as also disclosed in Radio Gijutsu Co. P, 210 is a method in which a glass mask 3 is placed at intervals on a photoresist layer 2 on a head substrate l.

コンタクト方法では、光のまわシ込みがなく、精度良く
パターン形成できる。他方、ノンコンタクト方法では、
ガラスマスク３を汚さず、かつホトレジスト層２へのガ
ラスマスク３による異物付着を防止できる。With the contact method, there is no light scattering and patterns can be formed with high precision. On the other hand, in the non-contact method,
The glass mask 3 is not soiled, and foreign matter can be prevented from adhering to the photoresist layer 2 due to the glass mask 3.

（発明が解決しようとする問題点） しかしながら、コンタクト方法では、ヘッド基板ｌの突
起などによシガラスマスク３を傷つけたり、密着させる
ことによって、ホトレジスト層２表面を汚すなどの欠点
があった。また、ノンコンタクト方法では、ガラスマス
ク３とホトレジスト層２との間隔を一定に保つことが困
難で、光のまわシ込み量にバラツキが生じたシ、ヘッド
基板に反シがある場合、ガラスマスク３とホトレジスト
層２の接触がさけられない欠点があった。(Problems to be Solved by the Invention) However, the contact method has drawbacks such as protrusions on the head substrate 1 damaging the glass mask 3 and contaminating the surface of the photoresist layer 2 due to close contact. In addition, in the non-contact method, it is difficult to maintain a constant distance between the glass mask 3 and the photoresist layer 2, and if there is variation in the amount of light penetration, or if there is a crease on the head substrate, the glass mask There was a drawback that contact between 3 and the photoresist layer 2 was unavoidable.

（問題点を解決するための手段） そこで、この発明では、ガラスマスクのパターン形成面
の空きスペースに一定の厚みでスペーサを設け、このス
ペーサを被露光層の表面に当接させることにより、前記
ガラスマスクを被露光層上に一定の間隔に配置する。(Means for Solving the Problems) Therefore, in the present invention, a spacer is provided with a constant thickness in the empty space on the pattern forming surface of the glass mask, and this spacer is brought into contact with the surface of the exposed layer. Glass masks are placed on the layer to be exposed at regular intervals.

（作用） このような方法によれば、ガラスマスクは被霧光層上に
間隔を設けて配置され、かつその間隔は一定となる。ま
た、被露光層を有する基板に反シがある場合、その反シ
の凸部分に当接するスペーサで力を加えて基板を平担に
修正できる。(Function) According to such a method, the glass masks are arranged at intervals on the fogged light layer, and the intervals are constant. Furthermore, if the substrate having the layer to be exposed has a warp, the substrate can be flattened by applying force with a spacer that comes into contact with the convex part of the warp.

（実施例） 以下この発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.

第１図はこの発明の第１の実施例を示す断面図である。FIG. 1 is a sectional view showing a first embodiment of the invention.

この図において、１１はガラスマスクで、表面にはパタ
ーン１２が形成されている。また、このガラスマスク１
１においては、紡紀表面の空きスペース（パターン１２
が形成されていない部分）の適当な箇所に複数個、一定
の厚み（例えば５μｍ）にスペーサ１３が形成されてい
る。このスペーサ１３は、有機物（例えば半田レジスト
）などをスクリーン印刷法で塗布することによシ形成さ
れる。In this figure, 11 is a glass mask, on the surface of which a pattern 12 is formed. Also, this glass mask 1
1, the free space on the spiny surface (pattern 12
A plurality of spacers 13 are formed with a constant thickness (for example, 5 μm) at appropriate locations in the area (where no space is formed). This spacer 13 is formed by applying an organic material (for example, solder resist) using a screen printing method.

このようなガラスマスク１１を用いて、同第１図に示す
ヘッド基板１４上のホトレジスト層１５の露光を行う場
合、ガラスマスクエ１は、同図に示すように、パターン
１２をホトレジスト層１５側にしてこのホトレジスト層
１５上に重ねられるわけであるが、この時、スペーサ１
３の先端がホトレジスト層１５に当接するようにして重
ねる。When using such a glass mask 11 to expose the photoresist layer 15 on the head substrate 14 shown in FIG. It is layered on the photoresist layer 15 of the lever, but at this time, the spacer 1
3 so that the tips thereof are in contact with the photoresist layer 15.

こねによシ、ガラスマスク１１は、スペーサ１３０分だ
けホトレジスト層重５上に間隔を設けて配置され、かつ
その間隔は常にスペーサ１３によシ一定に規制される。The glass masks 11 are placed on the photoresist layer 5 at intervals equal to the spacers 130, and the intervals are always regulated by the spacers 13 to be constant.

また、ヘッド基板１４に反シがある場合、その反りの凸
部分に当接するスペーサ１３で力を加えてヘッド基板１
４を平担に修正する。これによシ、ヘッド基板１４の反
）に原因するホトレジスト層１５とガラスマスクｌｌの
接触を防止する。In addition, if the head substrate 14 has a warp, force is applied with the spacer 13 that comes into contact with the convex portion of the warp to make the head board 1
Correct 4 to flat tan. This prevents contact between the photoresist layer 15 and the glass mask 11 caused by the head substrate 14.

第４図はこの発明の第２の実施例を示し、ヘッド基板１
４に突起１６を有する場合を示す。この突起１６が存在
しても、前記スペーサ１３によシガラスマスク１１が離
れて設けられるため、傷付きはなくなる。FIG. 4 shows a second embodiment of the invention, in which a head substrate 1
4 shows a case in which a protrusion 16 is provided. Even if this protrusion 16 exists, since the glass mask 11 is provided apart from the spacer 13, there will be no scratches.

（発明の効果） 以上のように、この発明の方法では、ガラスマスクに設
けたスペーサによシ、このガラスマスクを被露光層上に
一定の間隔に配置できるので、■光のまわ９込み量が一
定となシ、パターン形成時の線幅のバラツキが少なくな
る、■被露光層を有する基板の突起などによってガラス
マスクを傷つけることがない、という効果を有する。ま
た、基板に反シがある場合、その反夛の凸部分に当接す
るスペーサで力を加えて基板を平担に修正することがで
きるので、反シに原因する被露光層とガラスマスクとの
接触を防止できる。また、スペーサは、ガラスマスクの
パターン形成面の空キスペースに形成されておシ、した
がって、被露光層も、パターンのない空きスペースの所
しか傷めず、重要なパターン形成箇所は保護される。(Effects of the Invention) As described above, in the method of the present invention, the glass mask can be arranged at regular intervals on the exposed layer using the spacers provided on the glass mask, so that: It has the following effects: (1) the variation in line width during pattern formation is reduced; and (2) the glass mask is not damaged by protrusions on the substrate having the exposed layer. In addition, if there is a warp on the substrate, the substrate can be flattened by applying force with a spacer that comes into contact with the convex part of the warp, so that the exposed layer and the glass mask that are caused by the warp can be corrected. Contact can be prevented. Further, the spacer is formed in the empty space on the pattern forming surface of the glass mask, so that the exposed layer is damaged only in the empty space where there is no pattern, and the important pattern forming area is protected.

【図面の簡単な説明】[Brief explanation of the drawing]

（図面） 第１図はこの発明のホトリソ工程におけるマスクアライ
メント方法の第１の実施例を示す断面図、第２図および
第３図は従来のアライメント方法を示し、特に第２図は
コンタクト方法を示す断面図、第３図はノンコンタクト
方法を示す断面図、第４図はこの発明の第２の実施例を
示す断面図である。 １１・・・ガラスマスク、１２・・・パターン、１３・
・・スペーサ、１５・・・ホトレジスト層。 一−ＩＦ、３−− タスマスク ×−サ レノ又１層(Drawings) Fig. 1 is a sectional view showing a first embodiment of the mask alignment method in the photolithography process of the present invention, Figs. 2 and 3 show the conventional alignment method, and especially Fig. 2 shows the contact method. 3 is a sectional view showing a non-contact method, and FIG. 4 is a sectional view showing a second embodiment of the present invention. 11...Glass mask, 12...Pattern, 13.
... Spacer, 15... Photoresist layer. 1-IF, 3-- Tasmask x-Saleno Mata 1 layer

Claims (1)

【特許請求の範囲】 （ａ）ガラスマスクのパターン形成面の空きスペースに
一定の厚みでスペーサを設け、 （ｂ）このスペーサを被露光層の表面に当接させること
により、 （ｃ）前記ガラスマスクを被露光層上に一定の間隔に配
置することを特徴とするホトリソ工程におけるマスクア
ライメント方法。[Claims] (a) By providing a spacer with a constant thickness in the empty space on the pattern-forming surface of the glass mask, (b) by bringing the spacer into contact with the surface of the exposed layer, (c) by bringing the spacer into contact with the surface of the exposed layer; A mask alignment method in a photolithography process, characterized by arranging masks at regular intervals on a layer to be exposed.
JP60101614A 1985-05-15 1985-05-15 Mask alignment method in photolithography process Pending JPS61260633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60101614A JPS61260633A (en) 1985-05-15 1985-05-15 Mask alignment method in photolithography process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60101614A JPS61260633A (en) 1985-05-15 1985-05-15 Mask alignment method in photolithography process

Publications (1)

Publication Number Publication Date
JPS61260633A true JPS61260633A (en) 1986-11-18

Family

ID=14305277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60101614A Pending JPS61260633A (en) 1985-05-15 1985-05-15 Mask alignment method in photolithography process

Country Status (1)

Country Link
JP (1) JPS61260633A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005052891A1 (en) * 2003-11-26 2005-06-09 Sharp Kabushiki Kaisha Photomask and production method for laminated substrate using this
JP2007079368A (en) * 2005-09-16 2007-03-29 Dainippon Printing Co Ltd Method for manufacturing patterned body, and photomask for vacuum uv ray
JP2009109843A (en) * 2007-10-31 2009-05-21 Toppan Printing Co Ltd Photomask and method for manufacturing color filter substrate using the same
JP2013015821A (en) * 2011-06-10 2013-01-24 Nsk Technology Co Ltd Exposure equipment
CN104360579A (en) * 2014-11-11 2015-02-18 京东方科技集团股份有限公司 Mask plate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005052891A1 (en) * 2003-11-26 2005-06-09 Sharp Kabushiki Kaisha Photomask and production method for laminated substrate using this
JP2007079368A (en) * 2005-09-16 2007-03-29 Dainippon Printing Co Ltd Method for manufacturing patterned body, and photomask for vacuum uv ray
JP2009109843A (en) * 2007-10-31 2009-05-21 Toppan Printing Co Ltd Photomask and method for manufacturing color filter substrate using the same
JP2013015821A (en) * 2011-06-10 2013-01-24 Nsk Technology Co Ltd Exposure equipment
CN104360579A (en) * 2014-11-11 2015-02-18 京东方科技集团股份有限公司 Mask plate
WO2016074387A1 (en) * 2014-11-11 2016-05-19 京东方科技集团股份有限公司 Mask plate
US9753365B2 (en) 2014-11-11 2017-09-05 Boe Technology Group Co., Ltd. Mask plate

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