JPS59125733A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS59125733A JPS59125733A JP58000139A JP13983A JPS59125733A JP S59125733 A JPS59125733 A JP S59125733A JP 58000139 A JP58000139 A JP 58000139A JP 13983 A JP13983 A JP 13983A JP S59125733 A JPS59125733 A JP S59125733A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- patterns
- positioning
- semiconductor element
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体装置製造においてフォトレジストの
パターン形成に用いるフォトマスクに関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used for patterning photoresist in semiconductor device manufacturing.
従来、半導体装置の製造工程は熱酸化・拡散処理工程と
、フォトレジスト・フォトエツチング工程の繰り返しで
あり、フォトレジスト工程とけ半導体基板表面に感光樹
脂剤を塗布し目金・露光工程において、フォトマスクの
パターンを焼き付は転写する工程であるが、このパター
ンの出来栄えを確認するための位置合せパターンがある
。年々半導体装置の縮少化・高周積化が進むにつれて、
工程も複雑になりフォトレジスト工程も増加した為フォ
トレジスト工程で使用される位置合せ用パターンの半導
体素子片(ベレット)ハターン内の占有率も大きくなっ
てきた。しかしながら、この位置合せパターンは各フォ
トレジスト工程のフォトレジストパターンの出来栄えを
確認するのに絶対に不可欠なものであり、今後、該パタ
ーンが削除されるのは考えられない事である。このませ
工程が複雑化し、該パターンが増加すると半導体素子片
内の占有率も大きくなり、半導体装置の縮少化推進の妨
けになるため、いかに該位置合せパターンの半導体素子
片パターン内占有率を小さくするかが考えられてきた。Traditionally, the manufacturing process for semiconductor devices involves repeating a thermal oxidation/diffusion process and a photoresist/photoetching process. Printing is the process of transferring the pattern, but there is an alignment pattern to check the quality of this pattern. As semiconductor devices continue to shrink in size and increase in frequency,
As the process has become more complex and the number of photoresist processes has increased, the occupancy rate of the alignment pattern used in the photoresist process within the semiconductor element piece (bullet) pattern has also increased. However, this alignment pattern is absolutely essential for checking the quality of the photoresist pattern in each photoresist process, and it is inconceivable that this pattern will be deleted in the future. As the alignment process becomes more complicated and the number of patterns increases, the occupation rate within the semiconductor element piece also increases, which hinders the reduction of semiconductor devices. Consideration has been given to how to make it smaller.
この発明の目的はフォトレジスト工程の目金・露光工程
に使用される位置合せパターンを半導体素子片パターン
外へと配置したフォトマスクを提供する事にある。It is an object of the present invention to provide a photomask in which an alignment pattern used in the grating/exposure process of the photoresist process is arranged outside the pattern of a semiconductor element piece.
この発明のフォトマスクは半導体装置製造においてフォ
トレジスト工程の目金・露光工程及びフォトンシストパ
ターンの出来栄え(ズレなど)をチェックするために使
用される位置合せ用パターンが半導体素子片パターンの
外に配置されている事を特徴としている。In the photomask of this invention, the alignment pattern used to check the quality (misalignment, etc.) of the photoresist process, exposure process, and photon cyst pattern in semiconductor device manufacturing is arranged outside the semiconductor element piece pattern. It is characterized by being
次にこの発明の一実施例に付き図を用い゛C説明する。Next, one embodiment of the present invention will be explained using the accompanying drawings.
第1図、第2図は、この発明の一実施例を説明するため
フォトマスクの平面図である。1 and 2 are plan views of a photomask for explaining one embodiment of the present invention.
この実施例のフォトマスクはガラスあるいは石英等の透
明な材料を平板状に加工したフォトマスク基板1に金属
や金属酸化物で形成てれている半導体素子片パターン2
を有しく第1図)、該半導体紫子片パターンー2間に目
金・絽光作業時に使用及びフォトレジストパターンの出
来栄えをチェックするために使用する位置合せ用パター
ン3を配置している(第2図)。The photomask of this embodiment has a semiconductor element piece pattern 2 formed of metal or metal oxide on a photomask substrate 1 made of a transparent material such as glass or quartz processed into a flat plate shape.
A positioning pattern 3 is arranged between the semiconductor violet strip pattern 2 (see Fig. 1), which is used during eye-gluing/glazing work and used to check the quality of the photoresist pattern. Figure 2).
即ち、この実施例によれば、今後も進むであろう半導体
装置パターン縮少化に伴う工程の複雑化により増加する
位置合せ用パターンを半導体素子片パターン2外へ配置
した事により、半導体素子片パターン内の開いた場所へ
他の素子回路を増やす事ができる。That is, according to this embodiment, by arranging the alignment pattern outside the semiconductor element piece pattern 2, which will increase due to the complexity of the process accompanying the shrinking of semiconductor device patterns that will continue to advance in the future, the semiconductor element piece Other element circuits can be added to open areas within the pattern.
第1図および第2図は本発明の一実施例を示すフォトマ
スクの平面図である。尚、図において1・・・・・・フ
ォトマスク基板、2・・・・・・半導体素子片パターン
、3・・・・・・位置合せ用パターン、である。1 and 2 are plan views of a photomask showing an embodiment of the present invention. In the figure, 1... photomask substrate, 2... semiconductor element piece pattern, 3... alignment pattern.
Claims (1)
れた光を遮断するための薄膜パターンを付した半導体装
置製造用のフォトマスクにおいて、目金・露光工程に使
用される位置合せパターンが半導体素子片パターン間に
配置されている争を特徴とするフォトマスク。In photomasks for manufacturing semiconductor devices, which have a thin film pattern made of metal or metal oxide on the surface of the substrate to block light, the alignment pattern used in the eyelid and exposure process is made of semiconductor material. A photomask characterized by layers arranged between element patterns.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58000139A JPS59125733A (en) | 1983-01-04 | 1983-01-04 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58000139A JPS59125733A (en) | 1983-01-04 | 1983-01-04 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59125733A true JPS59125733A (en) | 1984-07-20 |
Family
ID=11465689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58000139A Pending JPS59125733A (en) | 1983-01-04 | 1983-01-04 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59125733A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61168227A (en) * | 1985-01-21 | 1986-07-29 | Mitsubishi Electric Corp | Substrate for exposure of minute pattern and apparatus for exposing minute pattern |
-
1983
- 1983-01-04 JP JP58000139A patent/JPS59125733A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61168227A (en) * | 1985-01-21 | 1986-07-29 | Mitsubishi Electric Corp | Substrate for exposure of minute pattern and apparatus for exposing minute pattern |
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