JPH04163455A - Photo mask - Google Patents
Photo maskInfo
- Publication number
- JPH04163455A JPH04163455A JP2289004A JP28900490A JPH04163455A JP H04163455 A JPH04163455 A JP H04163455A JP 2289004 A JP2289004 A JP 2289004A JP 28900490 A JP28900490 A JP 28900490A JP H04163455 A JPH04163455 A JP H04163455A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- light
- fine
- film
- photo resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程で用いられるフォトマス
クに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used in the manufacturing process of semiconductor devices.
従来この種のフォトマスクは、第３図に示すように、例
えばガラス基板１上にクロム等の金属膜を形成し、この
金属膜をパターニングし半導体基板上に転写すべき回路
パターンに対応する光遮断用パターン２のみが形成され
た構造となっていた。Conventionally, this type of photomask, as shown in FIG. 3, consists of forming a metal film such as chromium on a glass substrate 1, patterning this metal film, and applying light corresponding to a circuit pattern to be transferred onto a semiconductor substrate. The structure was such that only the blocking pattern 2 was formed.
上述した従来のフォトマスクは、半導体基板に転写すべ
き回路パターンに対応する光遮断用パターン２のみが形
成されていたので、回路パターンの微細化に伴ない露光
時光の回折現象により生ずる光透過用領域３からの透過
光４の光強度分布の不均一さが増大し、結果として、第
４図（ａ＞に示すように、半導体基板６上のフォトレジ
スト膜７に回路パターンを転写し現像した場合、第４図
（ｂ）に示すように、フォトレジストパターン７Ｂは台
形状となり、寸法制御が困難となるため、素子の微細化
が困難になるという欠点がある。In the conventional photomask described above, only the light blocking pattern 2 corresponding to the circuit pattern to be transferred onto the semiconductor substrate was formed. The non-uniformity of the light intensity distribution of the transmitted light 4 from the region 3 increases, and as a result, as shown in FIG. In this case, as shown in FIG. 4(b), the photoresist pattern 7B has a trapezoidal shape, making it difficult to control the dimensions, which makes it difficult to miniaturize the device.
本発明のフォトマスクは、透明基板上に形成された金属
膜または金属酸化膜からなる光遮断用バターンを有する
半導体装置用のフォトマスクであって、光透過用領域内
に、露光時フォトレジスト膜に転写されない程度の微細
な擬装パターンを設けたものである。The photomask of the present invention is a photomask for a semiconductor device having a light-blocking pattern made of a metal film or a metal oxide film formed on a transparent substrate, and in which a photoresist film is formed during exposure in a light-transmitting region. The camouflage pattern is so fine that it cannot be transferred to the image.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の断面図であり、露光に用い
た場合を示している。FIG. 1 is a sectional view of one embodiment of the present invention, showing the case where it is used for exposure.
第１図においてフォトマスクは、ガラス基板１と、この
ガラス基板１上に形成されたクロム等の金属膜や金属酸
化膜をパターニングして形成した光遮断用パターン２と
、光透過用領域３内に形成された微細な擬装パターン５
とから構成されている。この擬装パターン５は光遮断用
パターン２と同一工程で形成され、露光時フォトレジス
ト膜に転写されない程度の大きさとなっている。In FIG. 1, the photomask includes a glass substrate 1, a light-blocking pattern 2 formed by patterning a metal film such as chromium, or a metal oxide film formed on the glass substrate 1, and a light-transmitting area 3. Fine camouflage pattern 5 formed on
It is composed of. This camouflage pattern 5 is formed in the same process as the light blocking pattern 2, and has a size that is not transferred to the photoresist film during exposure.
このように構成された本実施例を用いて露光を行う場合
、光透過用領域３内の透過光４Ａの光強度分布は、第１
図に示したようにほぼ均一なものとなる。When performing exposure using this embodiment configured in this way, the light intensity distribution of the transmitted light 4A in the light transmission area 3 is
As shown in the figure, it becomes almost uniform.
従って第２図（ａ）に示すように、半導体基板６上のフ
ォトレジスト膜７をこのフォトマスつて露光した場合、
現像後のフォトレジストパターン７Ａは第２図（ｂ）に
示すように、フォトマスクの光遮断用パターン２か忠実
に転写されたものとなる。このため微細な半導体素子パ
ターンを精度良く形成できる。Therefore, as shown in FIG. 2(a), when the photoresist film 7 on the semiconductor substrate 6 is exposed using this photomask,
The photoresist pattern 7A after development is a faithful transfer of the light blocking pattern 2 of the photomask, as shown in FIG. 2(b). Therefore, fine semiconductor element patterns can be formed with high precision.
以上説明したように本発明は、半導体基板に転写すべき
回路パターンの他に、半導体基板上のフォトレジストに
転写されない程度の微細な擬装フォトマスクパターンを
、光透過領域に形成することにより、露光時の透過光の
光強度分布を均一にできるなめ、回路パターンを精度良
くフォトレジスト膜に転写することができる。このため
、微細化された半導体素子を精度良く形成てきるという
効果がある。As explained above, in addition to the circuit pattern to be transferred to the semiconductor substrate, the present invention forms a pseudo photomask pattern so fine that it is not transferred to the photoresist on the semiconductor substrate in the light-transmitting area. Since the light intensity distribution of the transmitted light can be made uniform, the circuit pattern can be accurately transferred to the photoresist film. Therefore, there is an effect that miniaturized semiconductor elements can be formed with high precision.
第１図は本発明の一実施例の断面図、第２図は本発明の
実施例を用いて露光した場合を説明するための半導体チ
ップの断面図、第３図は従来例の断面図、第４図は従来
例を用いて露光した場合を説明するための半導体チップ
の断面図である。
１・・・ガラス基板、２・・・光遮断用パターン、３・
・光透過用領域、４，４Ａ・・・透過光、５・・・擬装
パターン、６・・・半導体基板、７・・・フォトレジス
ト膜、７Ａ、７Ｂ・・・フォトレジストパターン。FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor chip for explaining the case of exposure using the embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional example. FIG. 4 is a cross-sectional view of a semiconductor chip for explaining a case of exposure using a conventional example. 1...Glass substrate, 2...Light blocking pattern, 3...
- Light transmission area, 4, 4A... Transmitted light, 5... Disguised pattern, 6... Semiconductor substrate, 7... Photoresist film, 7A, 7B... Photoresist pattern.
Claims (1)
なる光遮断用パターンを有する半導体装置用のフォトマ
スクであって、光透過用領域内に、露光時フォトレジス
ト膜に転写されない程度の微細な擬装パターンを設けた
ことを特徴とするフォトマスク。A photomask for semiconductor devices that has a light-blocking pattern made of a metal film or metal oxide film formed on a transparent substrate, and has fine particles in the light-transmitting area that are not transferred to the photoresist film during exposure. A photomask characterized by having a camouflaged pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2289004A JPH04163455A (en) | 1990-10-26 | 1990-10-26 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2289004A JPH04163455A (en) | 1990-10-26 | 1990-10-26 | Photo mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04163455A true JPH04163455A (en) | 1992-06-09 |
Family
ID=17737598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2289004A Pending JPH04163455A (en) | 1990-10-26 | 1990-10-26 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04163455A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08503512A (en) * | 1992-11-28 | 1996-04-16 | ビーエーエスエフ アクチエンゲゼルシャフト | Condensation products of polyalkylene polyamines, process for their production and their use in making paper |
| JP3009925B2 (en) * | 1994-02-09 | 2000-02-14 | マイクロユニティ システムズ エンジニアリング，インコーポレイテッド | Lithographic patterning mask using off-axis illumination |
| KR20020091632A (en) * | 2001-05-31 | 2002-12-06 | 엘지.필립스 엘시디 주식회사 | Slit type photo mask |
| CN106784203A (en) * | 2017-03-31 | 2017-05-31 | 深圳市华星光电技术有限公司 | A kind of dot structure and manufacture method |
| CN111063268A (en) * | 2019-12-12 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Micro light-emitting diode display panel, preparation method thereof and display device |
-
1990
- 1990-10-26 JP JP2289004A patent/JPH04163455A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08503512A (en) * | 1992-11-28 | 1996-04-16 | ビーエーエスエフ アクチエンゲゼルシャフト | Condensation products of polyalkylene polyamines, process for their production and their use in making paper |
| JP3009925B2 (en) * | 1994-02-09 | 2000-02-14 | マイクロユニティ システムズ エンジニアリング，インコーポレイテッド | Lithographic patterning mask using off-axis illumination |
| KR20020091632A (en) * | 2001-05-31 | 2002-12-06 | 엘지.필립스 엘시디 주식회사 | Slit type photo mask |
| CN106784203A (en) * | 2017-03-31 | 2017-05-31 | 深圳市华星光电技术有限公司 | A kind of dot structure and manufacture method |
| US10367128B2 (en) | 2017-03-31 | 2019-07-30 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Pixel structure and method for the fabrication thereof |
| CN111063268A (en) * | 2019-12-12 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Micro light-emitting diode display panel, preparation method thereof and display device |
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