JPS6126023A - Production of substrate for liquid crystal display device - Google Patents

Production of substrate for liquid crystal display device

Info

Publication number
JPS6126023A
JPS6126023A JP14731384A JP14731384A JPS6126023A JP S6126023 A JPS6126023 A JP S6126023A JP 14731384 A JP14731384 A JP 14731384A JP 14731384 A JP14731384 A JP 14731384A JP S6126023 A JPS6126023 A JP S6126023A
Authority
JP
Japan
Prior art keywords
substrate
liquid crystal
crystal display
display
ghost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14731384A
Other languages
Japanese (ja)
Other versions
JP2725766B2 (en
Inventor
Kenichi Narita
建一 成田
Akira Matsumoto
昭 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15427367&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6126023(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP59147313A priority Critical patent/JP2725766B2/en
Publication of JPS6126023A publication Critical patent/JPS6126023A/en
Application granted granted Critical
Publication of JP2725766B2 publication Critical patent/JP2725766B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To improve the adhesiveness of oriented films formed at a low temp. to substrates in particular and to obviate the generation of a ghost even in display at a high duty ratio by specifying heating conditions in a prescribed range. CONSTITUTION:An arom. polyether amide resin liquid is coated on the glass substrates 3 provided with transparent electrodes 1 consisting of, for example, the oxide of indium and tin and is dried, then the coating is treated at >=150 deg.C and <=250 deg.C to form the orienting material film by which the oriented films 2 are formed. The resulted films 2 have the good adhesiveness to the substrates and have the good orientation characteristic. The electrodes 1 are capable of maintaining low resistance. The high display grade which obviates the generation of the ghost is thus obtainable even in the display at the high duty ratio.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本多明は特に大容量ドツトマトリクスの如《デユーティ
比の大きい駆動をするのに好適な液晶表示器用基板の製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application Akira Honda particularly relates to a method of manufacturing a substrate for a liquid crystal display suitable for driving with a large duty ratio, such as a large-capacity dot matrix.

(口) 従来技術 従来液晶表示器は、第3図に示すように透明電極tin
と配向膜f21 T21を有した液晶表示器用基板+3
1 (31で液晶(4)を挾持している。このような液
晶表示器において、透明電極(1)t1+は概ね熱処理
によって抵抗値が増加する。
(Expression) Conventional technology A conventional liquid crystal display has a transparent electrode tin as shown in Fig. 3.
and alignment film f21 T21 substrate for liquid crystal display +3
1 (31) sandwich the liquid crystal (4). In such a liquid crystal display, the resistance value of the transparent electrode (1) t1+ generally increases due to heat treatment.

一方配向膜(21 (21は無機質から有機質のものに
なって処理は大量生産可能な方向になったが成膜工程が
必要になった。例えば現在多く用いられているものに,
j{ IJイミド系嵩高分子配向膜あり、この最低成膜
条件は280℃30分といわれ、斯種資料に関しては枚
挙に遣がない。ところが28D℃30分の焼成は当然透
明電極(11(1)にも影響を与えその抵抗値を高める
。これによりドツトマトリクス表示器においては、わず
か1/32デユ一テイ程度で連続点灯ドツトの延長部分
にあたかも濃い半選択ドツトのような表示(通常ゴース
トと呼ばれる)が現われる。このゴーストは大きいデユ
ーティ比の時に特に顕著であるが、信号波形が電極の抵
抗により歪み、特に選択ドツト(点灯ドツト)の近《で
は液晶の配向が乱れやすいのでゴーストとなって現れる
ものと理解される。しかし、当然このゴーストの発生は
表示品位を著しく低下させるので好まし《ない。
On the other hand, the alignment film (21) has changed from an inorganic material to an organic material, and the processing has become possible for mass production, but a film formation process is required.
There is an IJ imide-based bulky polymer alignment film, and the minimum film forming conditions are said to be 280°C for 30 minutes, and there are countless references to this type of material. However, baking for 30 minutes at 28D°C naturally affects the transparent electrode (11(1)) and increases its resistance.As a result, in a dot matrix display, the continuous lighting dots can be extended with only about 1/32 duty. A dark half-selected dot-like display (usually called a ghost) appears in the selected dot (usually called a ghost).This ghost is especially noticeable when the duty ratio is large, but the signal waveform is distorted by the resistance of the electrode, especially when the selected dot (lit dot) It is understood that the alignment of the liquid crystal is likely to be disturbed in the vicinity of , so that a ghost appears. However, naturally, the occurrence of this ghost is not desirable because it significantly degrades the display quality.

一方低温焼成型の配向膜としてポリアミド樹脂、ポリビ
ニルアルコール樹脂、芳香族ポリエーテルアミド系樹脂
などがある逅、前者2つについては耐湿特性が−悪く実
用されていない。最後の芳香族ポリエーテルアミド系樹
脂は特開@5 B −37621号公報にて配向剤とし
て提案されたものであるが、記載されたとうりに塗布し
加熱乾燥(100〜120℃)を行なっても、成膜はす
るがラビング工程で剥離を生じ生産できなかった。
On the other hand, there are polyamide resins, polyvinyl alcohol resins, aromatic polyetheramide resins, etc. as low-temperature firing type alignment films, but the former two have poor moisture resistance and are not put into practical use. The final aromatic polyetheramide resin was proposed as an alignment agent in JP-A-5B-37621, and was applied as described and dried under heat (100 to 120°C). Although a film was formed, peeling occurred during the rubbing process and production could not be completed.

P→ 発明が解決しようとする問題点 本発明は低温で成膜された配向膜の特に基板への密着性
を向上させた液晶表示器用基板の製造方法を提供するも
のである。
P→ Problems to be Solved by the Invention The present invention provides a method for manufacturing a substrate for a liquid crystal display in which the adhesion of an alignment film formed at a low temperature to a substrate is particularly improved.

に)問題点を解決するための手段 本発明は成膜条件のうちの加熱条件を所定の範囲内とす
る事で解決したものであって、後述する如(配向膜の密
着性が処理時間に依存することを見出した事に基づいて
なされたものである。
(ii) Means for solving the problem The present invention solves the problem by adjusting the heating conditions among the film forming conditions within a predetermined range. This was done based on the discovery that there is a dependence on

(ホ)作 用 これにより透明電極の抵抗値に影響を与えず、かつ配向
膜が丈夫な液晶表示器用の基板が提供できる。
(E) Function This makes it possible to provide a substrate for a liquid crystal display that does not affect the resistance value of the transparent electrode and has a durable alignment film.

(へ)実施例 本発明の詳細な説明にあたって、先に透明電極の特性に
ついて説明する。
(f) Example In explaining the present invention in detail, the characteristics of the transparent electrode will first be explained.

まず具体例をあげると、第1図は1/1[](]デユー
ティ用ドツトマトリクス表示器の透明電極の特性図で、
インジウムとスズの酸化物からなり、中0.3M長さ2
50鰭の電極(但し配向膜の被覆有)の両端の抵抗値と
30分加熱の処理温度との関係を示している。パターン
を形成したときの初期値は、面抵抗値:8007口で1
両端の抵抗値は平均40にΩであった。ところが250
℃で抵抗値の変動中が増えはじめ、280℃50分の処
理をした基板の電極の抵抗値は急激に上昇をはじめた。
First, to give a concrete example, Fig. 1 is a characteristic diagram of the transparent electrode of a dot matrix display for 1/1[](] duty.
Made of indium and tin oxide, medium length 0.3M2
It shows the relationship between the resistance value at both ends of a 50-fin electrode (covered with an alignment film) and the treatment temperature of 30 minutes of heating. The initial value when forming the pattern is sheet resistance value: 8007 holes and 1.
The average resistance value at both ends was 40Ω. However, 250
℃, the resistance value began to increase, and the resistance value of the electrode of the substrate treated at 280° C. for 50 minutes began to increase rapidly.

種々あ透明電極を検討したが、いずれも概ね280℃を
しきい値として抵抗が増大することが判った。
Various transparent electrodes were investigated, but it was found that the resistance of all of them increases with a threshold value of approximately 280°C.

次に配向膜について説明する。日立化成工業株製芳香族
ポリエーテルアミド樹脂液HL−1100(樹脂濃度4
%)に若干の添加物を混練し、透明電極を設けたガラス
基台上にスピンナ法により一150Orpm で塗布し
乾燥した。第2図はこのようにして塗布した配向剤によ
る配向膜の特性図で、配向剤の成膜条件の1つである加
熱処理温度(時間はいずれも30分)と、成膜後にイソ
プロピルアルコールにより超音波洗浄した時に配向膜が
欠落して生じたピンホールの密度(ピンホール個数/d
)との関係を示している。これらの事は先の公報では知
られていないことであるが、このピンホールの密度とラ
ビングにより生じる配向膜の損傷剥離の程度とはほぼ対
応して3つ、綿布でラビングした時に配向膜が損傷剥離
しないためには10−2個/cd以下、第2図では13
0℃30分以上であればよい。しかしピンホール密度の
発生のばらつき量が急激に少なくなる点が150℃にあ
る事が判ったので、150°C以上の温度で処理すると
著しく歩留りが向上する。
Next, the alignment film will be explained. Aromatic polyetheramide resin liquid HL-1100 manufactured by Hitachi Chemical Co., Ltd. (resin concentration 4
%) and some additives were kneaded and applied onto a glass base provided with a transparent electrode using a spinner method at -150 rpm and dried. Figure 2 shows the characteristics of the alignment film made of the alignment agent applied in this way. Density of pinholes (number of pinholes/d) caused by missing alignment film during ultrasonic cleaning
). Although these things were not known in the previous publication, the density of pinholes and the degree of damage and peeling of the alignment film caused by rubbing roughly correspond to three things. In order to prevent damage and peeling, the number should be 10-2 pieces/cd or less, 13 pieces in Figure 2.
It is sufficient if the temperature is 30 minutes or more at 0°C. However, it has been found that the point at which the variation in pinhole density decreases sharply is at 150°C, so processing at a temperature of 150°C or higher significantly improves the yield.

(ト)発明の効果 以上の如く本発明は芳香族ポリエーテルアミド樹脂を1
50℃以上250℃以下で成膜処理することにより、基
板との密着性に優れ、配向特性は従悉通り良好で、かつ
透明電極は低抵抗を保つ事が出来るから、高デユーテイ
比の表示においてもゴーストを生じない。
(g) Effects of the invention As described above, the present invention provides aromatic polyetheramide resin
By forming the film at temperatures above 50°C and below 250°C, it has excellent adhesion to the substrate, the alignment properties are as good as before, and the transparent electrode can maintain low resistance, making it suitable for high duty ratio displays. also does not cause ghosting.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は透明電極の特性図、第2図は配向膜の特性図、
第3図は液晶表示器の断面図である。 tl)(11・・・透明電極、 +21(21・・・配
向膜、+31 (3)・・・基板、(4)・・・液晶。
Figure 1 is a characteristic diagram of the transparent electrode, Figure 2 is a characteristic diagram of the alignment film,
FIG. 3 is a sectional view of the liquid crystal display. tl) (11...Transparent electrode, +21 (21...Alignment film, +31 (3)...Substrate, (4)...Liquid crystal.

Claims (2)

【特許請求の範囲】[Claims] (1)透明電極を有した基板上に配向剤を設け、150
℃以上250℃以下の温度で処理して配向剤を成膜して
配向膜を形成する事を特徴とする液晶表示器用基板の製
造方法。
(1) An alignment agent is provided on a substrate having a transparent electrode, and
A method for manufacturing a substrate for a liquid crystal display, characterized in that an alignment film is formed by forming an alignment agent by processing at a temperature of not less than 0.degree. C. and not more than 250 degrees Celsius.
(2)前記配向膜は芳香族ポリエーテルアミド系樹脂で
ある事を特徴とする前記特許請求の範囲第1項記載の液
晶表示器用基板の製造方法。
(2) The method for manufacturing a substrate for a liquid crystal display according to claim 1, wherein the alignment film is made of an aromatic polyetheramide resin.
JP59147313A 1984-07-16 1984-07-16 Method for manufacturing substrate for liquid crystal display Expired - Lifetime JP2725766B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59147313A JP2725766B2 (en) 1984-07-16 1984-07-16 Method for manufacturing substrate for liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59147313A JP2725766B2 (en) 1984-07-16 1984-07-16 Method for manufacturing substrate for liquid crystal display

Publications (2)

Publication Number Publication Date
JPS6126023A true JPS6126023A (en) 1986-02-05
JP2725766B2 JP2725766B2 (en) 1998-03-11

Family

ID=15427367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59147313A Expired - Lifetime JP2725766B2 (en) 1984-07-16 1984-07-16 Method for manufacturing substrate for liquid crystal display

Country Status (1)

Country Link
JP (1) JP2725766B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767025A (en) * 1980-10-13 1982-04-23 Nippon Sheet Glass Co Ltd Manufacture of electrically conductive transparent film
JPS57158228A (en) * 1981-03-20 1982-09-30 Gen Electric Polyether amide-imide resin and insulating electoconductive body
JPS5837621A (en) * 1981-08-31 1983-03-04 Hitachi Ltd Liquid crystal display element
JPS5868722A (en) * 1981-10-21 1983-04-23 Hitachi Ltd Liquid crystal display element
JPS5872923A (en) * 1981-10-28 1983-05-02 Hitachi Ltd Liquid crystal display element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767025A (en) * 1980-10-13 1982-04-23 Nippon Sheet Glass Co Ltd Manufacture of electrically conductive transparent film
JPS57158228A (en) * 1981-03-20 1982-09-30 Gen Electric Polyether amide-imide resin and insulating electoconductive body
JPS5837621A (en) * 1981-08-31 1983-03-04 Hitachi Ltd Liquid crystal display element
JPS5868722A (en) * 1981-10-21 1983-04-23 Hitachi Ltd Liquid crystal display element
JPS5872923A (en) * 1981-10-28 1983-05-02 Hitachi Ltd Liquid crystal display element

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Publication number Publication date
JP2725766B2 (en) 1998-03-11

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