JPS61258452A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61258452A
JPS61258452A JP60100915A JP10091585A JPS61258452A JP S61258452 A JPS61258452 A JP S61258452A JP 60100915 A JP60100915 A JP 60100915A JP 10091585 A JP10091585 A JP 10091585A JP S61258452 A JPS61258452 A JP S61258452A
Authority
JP
Japan
Prior art keywords
layers
formed
layer
contact holes
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60100915A
Inventor
Takeo Maeda
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60100915A priority Critical patent/JPS61258452A/en
Priority claimed from DE19863650170 external-priority patent/DE3650170D1/en
Publication of JPS61258452A publication Critical patent/JPS61258452A/en
Priority claimed from US07/976,664 external-priority patent/US5278099A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon

Abstract

PURPOSE:To improve an electromigration resistance by providing diffused layers on the surface of a substrate, insulation films with contact holes and wirings with three-layer structures consisting of Al or Al alloy layers/TiN layers/Ti layers in the contact holes. CONSTITUTION:A P-type well 2, an N-type well 3 and a field oxide film 4, a gate oxide film 6 and gate electrodes 8a and 8b are formed on the surfaces of a P-type silicon substrate 1, an element region 5 and ion-implanted layers 7a and 7b respectively. After N<+> type source and drain regions 9a and 10a, P<+> type source and drain regions 9b and 10b and a layer insulation film 11 are formed, contact holes 12a and 12b are drilled. Ti layers 13, TiN layers 14 and pure Al layers 15 are deposited and patterned to form the first layer wirings 161 and 162 with three-layer structures. Then, after a CVD-SiO2 layer 17 is formed, a contact hole 18 is formed and the second layer Al wiring is formed with the same method. With this constitution, an electromigration resistance can be improved.
JP60100915A 1985-05-13 1985-05-13 Semiconductor device Pending JPS61258452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60100915A JPS61258452A (en) 1985-05-13 1985-05-13 Semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP60100915A JPS61258452A (en) 1985-05-13 1985-05-13 Semiconductor device
DE19863650170 DE3650170D1 (en) 1985-05-13 1986-05-07 A semiconductor device having connection electrodes.
EP86106245A EP0209654B1 (en) 1985-05-13 1986-05-07 Semiconductor device having wiring electrodes
DE19863650170 DE3650170T2 (en) 1985-05-13 1986-05-07 A semiconductor device having connection electrodes.
EP9494108007A EP0613180A3 (en) 1985-05-13 1986-05-07 Semiconductor device having wiring electrodes.
US07/976,664 US5278099A (en) 1985-05-13 1992-11-16 Method for manufacturing a semiconductor device having wiring electrodes

Publications (1)

Publication Number Publication Date
JPS61258452A true JPS61258452A (en) 1986-11-15

Family

ID=14286631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60100915A Pending JPS61258452A (en) 1985-05-13 1985-05-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61258452A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244861A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor device and manufacture of same
JPS6441240A (en) * 1987-08-07 1989-02-13 Nec Corp Semiconductor integrated circuit device
JPH03129755A (en) * 1989-07-14 1991-06-03 Hitachi Ltd Semiconductor device and manufacture thereof
JPH03179745A (en) * 1989-12-07 1991-08-05 Fujitsu Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244861A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor device and manufacture of same
JPS6441240A (en) * 1987-08-07 1989-02-13 Nec Corp Semiconductor integrated circuit device
JPH03129755A (en) * 1989-07-14 1991-06-03 Hitachi Ltd Semiconductor device and manufacture thereof
JPH03179745A (en) * 1989-12-07 1991-08-05 Fujitsu Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
KR900007146B1 (en) Manufacture of semiconductor device
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
EP0310108A3 (en) Interconnection structure of a semiconductor device and method of manufacturing the same
JPH0316178A (en) Semiconductor device and manufacture thereof
JPS61150369A (en) Read-only semiconductor memory device and manufacture thereof
EP0342796A3 (en) Thin-film transistor
JPH01102955A (en) Mos semiconductor memory circuit device
JPH0294472A (en) Semiconductor device and manufacture thereof
JPS5982761A (en) Semiconductor memory
JPS62136069A (en) Semiconductor device and manufacture of the same
JPS59210658A (en) Semiconductor device and manufacture thereof
JPH0322462A (en) Method of forming local interconnection in integrated circuit and integrated circuit transistor structure
JPS62269363A (en) Semiconductor memory device
JPS5696850A (en) Semiconductor device and manufacture thereof
JPS60163455A (en) Read only memory device and manufacture thereof
JPS6417473A (en) Manufacture of semiconductor device
JPS61181168A (en) Nonvolatile semiconductor memory device
JPH02153552A (en) Semiconductor element and its manufacture
JPS6242564A (en) Thin film transistor and manufacture of the same
JPS61204976A (en) Thin film transistor device and manufacture thereof
JPS6010673A (en) Semiconductor device
JPS61252667A (en) Thin film transistor and manufacture thereof
TW380320B (en) Semiconductor device and method of manufacturing the same in which degradation due to plasma can be prevented
JPS56164578A (en) Manufacture of mos type semiconductor device
JPH02210330A (en) Liquid crystal electro-optical device