JPS61255031A - Semiconductor bonding device - Google Patents

Semiconductor bonding device

Info

Publication number
JPS61255031A
JPS61255031A JP9687985A JP9687985A JPS61255031A JP S61255031 A JPS61255031 A JP S61255031A JP 9687985 A JP9687985 A JP 9687985A JP 9687985 A JP9687985 A JP 9687985A JP S61255031 A JPS61255031 A JP S61255031A
Authority
JP
Japan
Prior art keywords
semiconductor
bonding
substrate
vibration
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9687985A
Other languages
Japanese (ja)
Inventor
Takashi Ebisawa
海老沢　隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP9687985A priority Critical patent/JPS61255031A/en
Publication of JPS61255031A publication Critical patent/JPS61255031A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck

Abstract

PURPOSE:To protect a semiconductor from heat and pressure by relieving the bonding requirements by providing a semiconductor base with an oscillation loading mechanism. CONSTITUTION:A magnetostrictive oscillator 50 is fixed to an upper plate 34 on a semiconductor base 30. In order to bond a semiconductor 40 to a substrate, a finger of substrate and the semiconductor 40 are pushed down by a heated bonding tool 60. At this time, the oscillation of oscillator 50 is transmitted to the semiconductor 40 without attenuation by the tension of a leaf spring 36. Through these procedures, the semiconductor 40 can be protected from any heating and pressurizing since the bonding requirements are relieved by reducing the bonding pressure or preliminarily heating temperature due to the oscillating energy.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体と回路基板とを一括してボンディング
する半導体ボンディング装置に関するも〔発明の概要〕 本発明は半導体ボンディング装置において、半導体装置
台を振動させる振動負荷機構全役けることにより、半導
体と回路基板を確実にボンディングを行なえるようにし
たものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor bonding device for collectively bonding a semiconductor and a circuit board. By fully utilizing the vibration load mechanism that vibrates the semiconductor and the circuit board, it is possible to reliably bond the semiconductor and the circuit board.

〔従来の技術〕[Conventional technology]

従来の半導体と回路基板とを一括してボンディングする
方法としては、第２ｒｙＪＫ示すように、半導体装置台
１上に配線パッドに金バンプをつけた半導体装置き、基
板３つまりポリイミドテープ３ａの上に形成され金メツ
Φを施こされた銅箔回路パターンのフィンガー３ｂと半
導体２の配線パッドとを位置合わせをして加熱したボン
ディングツール４を押圧してボンディングを行なってい
た。As shown in the 2nd RYJK, the conventional method of bonding a semiconductor and a circuit board all at once is to place a semiconductor device with gold bumps on wiring pads on a semiconductor device stand 1, and place it on a substrate 3, that is, a polyimide tape 3a. The fingers 3b of the formed copper foil circuit pattern and the wiring pads of the semiconductor 2 are aligned and pressed with a heated bonding tool 4 to perform bonding.

また、半導体や基板を高温にしたくない場合や、ボンデ
ィング性を向上させるために半導体をヒーター５により
て予備加熱を行ないボンディングを行なりていた。Further, in cases where it is not desired to heat the semiconductor or substrate to a high temperature, or in order to improve bonding properties, the semiconductor is preheated using a heater 5 to perform bonding.

〔発明が解決しようとする間層点及び目的〕１、かＬ＆
がら３従来のボンディングでけボンディング性を向上さ
せるためにボンディングツール圧力は高めになりまた、
半導体の予備加熱についても高温になるという問題点を
有している〇そこで、本発明は上記問題点を解決するも
ので、その目的とするところは、ボンディング条件を軽
減する良好な半導体ボンディング装置を提供することに
ある。[Interlayer point and purpose to be solved by the invention] 1.
However, in order to improve the bonding performance in conventional bonding, the bonding tool pressure is increased, and
Preheating of semiconductors also has the problem of high temperatures. Therefore, the present invention is intended to solve the above problems, and its purpose is to provide a good semiconductor bonding device that reduces bonding conditions. It is about providing.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、半導体と回路基板とを一括してボンディング
する半導体ボンディング装置において、半導体装置台を
振動させる振動負荷機構を設けたことを特徴とする。The present invention is characterized in that a semiconductor bonding apparatus for collectively bonding a semiconductor and a circuit board is provided with a vibration load mechanism that vibrates a semiconductor device stand.

〔作用〕[Effect]

本発明の構成によれば、ボンディング時に半導体装置台
を振動させることにより半導体に振動を伝えることがで
きるため、その振動エネルギーによってボンディングツ
ール圧力や半導体の予備加熱温度を低くすることができ
る。According to the configuration of the present invention, vibration can be transmitted to the semiconductor by vibrating the semiconductor device stand during bonding, so that the pressure of the bonding tool and the preheating temperature of the semiconductor can be lowered by the vibration energy.

〔実施例〕 第１図は本発明の実施例における半導体ボンデインク装
置である。[Embodiment] FIG. 1 shows a semiconductor bonding device in an embodiment of the present invention.

基台２０の上に半導体装置台３０が固定されている。こ
の半導体装置台３０は半導体４０を挾持したり解除した
りする爪３１．半導体を載せるセラミックス等の絶縁板
でできたステージ３２．その下に半導体を予備加熱する
ヒーターブロック３３゜さらに上板３４と下板３５の間
の板ばね３６とから構成されている。また、この半導体
装置台３０の上板３４には磁気作用により発振する磁歪
振動子５０が取り付けられている。基台２０はＸ、Ｙ。A semiconductor device stand 30 is fixed on the base 20. This semiconductor device stand 30 has claws 31 for holding and releasing the semiconductor 40. A stage 32 made of an insulating plate such as ceramics on which a semiconductor is placed. It is comprised of a heater block 33° below which preheats the semiconductor, and a leaf spring 36 between an upper plate 34 and a lower plate 35. Further, a magnetostrictive vibrator 50 that oscillates due to magnetic action is attached to the upper plate 34 of this semiconductor device stand 30. The base 20 is X, Y.

２軸に移動可能に構成され、ボンディングツール６０と
半導体４０とのボンディング位置合せができるようにな
っている。It is configured to be movable in two axes so that bonding positioning between the bonding tool 60 and the semiconductor 40 can be performed.

次に作用について説明する。Next, the effect will be explained.

半導体と基板をボンディングする際、ヒートブロック３
３の加熱により半導体４０が加熱され、基台２０の移動
によシ半導体４０とボンディングツール６０の位置合せ
及び基板との位置合せが行なわれる。ボンディング時に
は、第２図の従来の半導体ボンディング方法の概略断面
図と同様に、加熱したボンディングツール６０が図示し
ていないがその下に配置される基板のフィンガーおよび
半導体４０を押圧してボンディングが行なわれるが、こ
の時、磁歪振動子５０が発振し、この振動は板ばね３６
の作用により減衰することなく半導体４０にまで伝達さ
れる。この振動を負荷する時間はボンディングツールが
押圧している間で、通常１〜３秒であるがボンディング
ツールの押圧時間に関係なく任意に設定できる。また、
本実施例では振動負荷機構の発振源として磁歪振動子を
用いたが、圧電振動子を用いてもよい。Heat block 3 when bonding semiconductor and substrate
3, the semiconductor 40 is heated, and the movement of the base 20 aligns the semiconductor 40 with the bonding tool 60 and the substrate. At the time of bonding, similar to the schematic cross-sectional view of the conventional semiconductor bonding method shown in FIG. 2, a heated bonding tool 60 (not shown) presses the fingers of the substrate and the semiconductor 40 disposed below, thereby performing bonding. However, at this time, the magnetostrictive vibrator 50 oscillates, and this vibration is caused by the leaf spring 36.
The signal is transmitted to the semiconductor 40 without being attenuated due to the action of . The time during which this vibration is applied is usually 1 to 3 seconds while the bonding tool is pressing, but it can be set arbitrarily regardless of the pressing time of the bonding tool. Also,
In this embodiment, a magnetostrictive vibrator is used as the oscillation source of the vibration load mechanism, but a piezoelectric vibrator may also be used.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、半導体装置台を振動
させる振動負荷機構を設けたことによシ半導体に振動を
伝えることができるため、その振動エネルギーによりて
ボンディング圧力や半導体の予備加熱温度を低くするこ
となどボンディング条件を軽減し半導体を熱や圧力から
保護することができ、しいてはボンディングの信頼性に
もつなもつ金属間のボンディングに対しては振動を与え
ることにより、この酸化被膜が破壊されボンディングし
やすくなるという効果も有する。As described above, according to the present invention, by providing a vibration load mechanism that vibrates the semiconductor device stand, vibration can be transmitted to the semiconductor, and the vibration energy can be used to increase the bonding pressure and the preheating temperature of the semiconductor. By reducing the bonding conditions, such as by lowering the It also has the effect of destroying and making bonding easier.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す半導体ボンデインク装
置の斜視図。 第２図は従来の半導体ボンディング方法の概略断面図。 ３０・・・・・・・・・半導体装置台 ３３・・・・・・・・・ヒートブロック３６・・・・・
・・・・板ばね ５０・・・・・・・・・磁歪振動子 ６０・・・・・・・・・ボンディングツーツ以上FIG. 1 is a perspective view of a semiconductor bonding device showing an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a conventional semiconductor bonding method. 30... Semiconductor device stand 33... Heat block 36...
・・・・・・Plate spring 50・・・・・・Magnetostrictive vibrator 60・・・・・・Bonding tools or more

Claims (3)

【特許請求の範囲】[Claims] （１）半導体と回路基板とを一括してボンディングする
半導体ボンディング装置において、半導体装置台を振動
させる振動負荷機構を設けたことを特徴とする半導体ボ
ンディング装置。(1) A semiconductor bonding apparatus for collectively bonding a semiconductor and a circuit board, characterized in that a vibration load mechanism for vibrating a semiconductor device stand is provided. （２）振動負荷機構の振動発振源として磁歪振動子を用
いたことを特徴とする特許請求の範囲第１項に記載の半
導体ボンディング装置。(2) The semiconductor bonding apparatus according to claim 1, wherein a magnetostrictive vibrator is used as a vibration oscillation source of the vibration load mechanism. （３）振動負荷機構の振動発振源として圧電振動子を用
いたことを特徴とする特許請求の範囲第１項に記載の半
導体ボンディング装置。(3) The semiconductor bonding apparatus according to claim 1, wherein a piezoelectric vibrator is used as a vibration oscillation source of the vibration load mechanism.
JP9687985A 1985-05-08 1985-05-08 Semiconductor bonding device Pending JPS61255031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9687985A JPS61255031A (en) 1985-05-08 1985-05-08 Semiconductor bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9687985A JPS61255031A (en) 1985-05-08 1985-05-08 Semiconductor bonding device

Publications (1)

Publication Number Publication Date
JPS61255031A true JPS61255031A (en) 1986-11-12

Family

ID=14176699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9687985A Pending JPS61255031A (en) 1985-05-08 1985-05-08 Semiconductor bonding device

Country Status (1)

Country Link
JP (1) JPS61255031A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187640A (en) * 1987-01-30 1988-08-03 Toshiba Corp Die base device for inner lead bonder
JPH02205334A (en) * 1989-02-03 1990-08-15 Orient Watch Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187640A (en) * 1987-01-30 1988-08-03 Toshiba Corp Die base device for inner lead bonder
JPH02205334A (en) * 1989-02-03 1990-08-15 Orient Watch Co Ltd Manufacture of semiconductor device

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