JP3303474B2 - Method for forming electrical connection contact and method for bonding semiconductor device - Google Patents
Method for forming electrical connection contact and method for bonding semiconductor deviceInfo
- Publication number
- JP3303474B2 JP3303474B2 JP26215193A JP26215193A JP3303474B2 JP 3303474 B2 JP3303474 B2 JP 3303474B2 JP 26215193 A JP26215193 A JP 26215193A JP 26215193 A JP26215193 A JP 26215193A JP 3303474 B2 JP3303474 B2 JP 3303474B2
- Authority
- JP
- Japan
- Prior art keywords
- protruding electrode
- semiconductor device
- pressing
- height
- electrode portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、各種電子機器に使用す
る半導体装置の表面に形成された電気的接続接点の形成
方法および半導体装置の接合方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming electrical connection contacts formed on a surface of a semiconductor device used for various electronic devices and a method for bonding the semiconductor device .
【０００２】[0002]
【従来の技術】近年、半導体装置表面に突起状電極部
（以下金属バンプと称す）を形成し、その金属バンプを
介して回路基板と上記半導体装置とを機械的・電気的に
接合するフリップチップ実装方式は電卓・通信機器やコ
ンピュータ装置などに広く実用化されている。このなか
で、バンプ高さを高精度に制御するバンプレベリング方
法が重要な課題である。2. Description of the Related Art In recent years, a flip chip in which a protruding electrode portion (hereinafter referred to as a metal bump) is formed on the surface of a semiconductor device, and the circuit board and the semiconductor device are mechanically and electrically connected to each other via the metal bump. The mounting method is widely used in calculators, communication devices, computer devices, and the like. Among these, a bump leveling method for controlling the bump height with high precision is an important issue.
【０００３】以下に従来のバンプレベリング方法につい
て説明する。図８に示すように、（１）表面に金属バン
プ２を形成したウエハー状半導体装置１を平面で平滑な
ステージ６上に置き、（２）その上部から、ステージ６
と平行でウエハー状半導体装置１と同等かそれよりも大
きめの平面で平滑な押圧プレート７で金属バンプ２を押
圧し、ウエハー状半導体装置１上の全ての金属バンプ２
の高さを一括に制御、つまり、バンプレベリングする方
法を行なっていた。A conventional bump leveling method will be described below. As shown in FIG. 8, (1) the wafer-shaped semiconductor device 1 having the surface on which the metal bumps 2 are formed is placed on a flat and smooth stage 6, and (2) the stage 6
The metal bumps 2 are pressed by a flat and smooth pressing plate 7 which is parallel to the wafer-shaped semiconductor device 1 and is equal to or larger than the wafer-shaped semiconductor device 1.
The height of the bumps is controlled collectively, that is, bump leveling is performed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
従来の方法では、６インチ程度の大面積なウエハー状半
導体装置の場合、ステージ６や押圧プレート７も大面積
となり、これらの製作・維持管理は非常に困難である。
その結果、金属バンプ２の高精度なレベリングができな
いといった問題点を有していた。また、押圧力が非常に
大きくなり、その結果、高価な大出力のプレス機が必要
であるといった問題点を有していた。However, according to the above-mentioned conventional method, in the case of a wafer-like semiconductor device having a large area of about 6 inches, the stage 6 and the pressing plate 7 also have a large area, and the production and maintenance of these are required. Very difficult.
As a result, there is a problem that the leveling of the metal bump 2 cannot be performed with high accuracy. Further, the pressing force becomes very large, and as a result, there is a problem that an expensive large-output press is required.
【０００５】本発明は、上記の問題点を解決するもの
で、大面積のウエハー状半導体装置でも、その表面に形
成された金属バンプを容易に、かつ、高精度に高さ制御
できるバンプレベリング方法を提供することを目的とす
る。The present invention solves the above-mentioned problems, and a bump leveling method capable of easily and accurately controlling the height of metal bumps formed on the surface of a large-area wafer-like semiconductor device. The purpose is to provide.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するため
に本発明は、予め半導体装置上に複数の突起状電極部が
形成された後、前記突起状電極部の形成とは別工程で前
記各突起状電極部に対して１個毎、あるいは所定範囲の
複数の突起状電極部毎に押圧部にて押圧し、前記突起状
電極部の頂部の高さを制御するものである。 また、金属
ワイヤの先端に形成したボールをキャピラリーによって
半導体装置の電極パッド上に固着して突起状電極部の底
部を形成し、前記金属ワイヤを突起状電極部の底部の上
方でルーピングしてその端部を切断し、突起状電極部の
頂部を形成する第１工程と、第１工程により前記半導体
装置上に複数の突起状電極部が形成する第２工程と、第
２工程後、前記各突起状電極部に対して１個毎、あるい
は所定範囲の複数の突起状電極部毎に前記キャピラリー
とは別体の押圧部にて押圧し、前記突起状電極部の頂部
の高さを制御するものである。 また、予め半導体装置上
に複数の突起状電極部が形成された後、前記各突起状電
極部に対して１個毎、あるいは所定範囲の複数の突起状
電極部毎に押圧治具にて押圧し、前記突起状電極部の頂
部の高さを制御するものであり、前記押圧治具は、前記
突起状電極部の頂部を押圧する押圧部と前記半導体装置
に当接して高さ制御を行なうストッパーとを有するもの
である。 また、押圧部は半導体装置内の突起状電極部の
高さを異なる高さに制御するものである。 また、半導体
装置上に複数の突起状電極部が形成された後、前記突起
状電極部に対して押圧部にて押圧して前記突起状電極部
の頂部の高さを制御する際に、前記押圧部の形状を変化
させて突起状電極部の形状を変化させ、前記突起状電極
部 に接着剤を転写して基板上の電極に接合させるもので
ある。 According to the present invention, there is provided a semiconductor device having a plurality of protruding electrode portions.
After formation, it is performed in a separate process from the formation of the protruding electrode portion.
For each protruding electrode portion, one by one or within a predetermined range.
A plurality of protruding electrode portions are pressed by a pressing portion, and
The height of the top of the electrode is controlled. Also metal
The ball formed at the tip of the wire
The bottom of the protruding electrode part is fixed on the electrode pad of the semiconductor device.
A metal wire on the bottom of the protruding electrode.
And cut the end of the protruding electrode.
A first step of forming a top, and the first step
A second step of forming a plurality of protruding electrode portions on the device;
After two steps, for each of the protruding electrode portions,
Is the capillary for each of a plurality of protruding electrode portions in a predetermined range.
Pressed by a separate pressing part from the top of the protruding electrode part
Is to control the height. Also, beforehand on the semiconductor device
After a plurality of protruding electrode portions are formed on the
For each pole, or multiple protrusions in a predetermined range
Pressing with a pressing jig for each electrode part, the top of the protruding electrode part
The height of the part is controlled, the pressing jig, the
Pressing portion for pressing the top of the protruding electrode portion and the semiconductor device
Having a stopper for controlling height by contacting
It is. In addition, the pressing portion is formed on the protruding electrode portion in the semiconductor device.
The height is controlled to a different height. Also semiconductor
After a plurality of protruding electrode portions are formed on the device,
The protruding electrode portion is pressed by the pressing portion against the protruding electrode portion.
When controlling the height of the top of the
To change the shape of the protruding electrode portion,
The adhesive is transferred to the part and joined to the electrode on the substrate.
is there.
【０００７】[0007]
【作用】本発明によれば、予め半導体装置上に複数の突
起状電極部（金属バンプ）が形成した後、半導体装置上
の全ての突起状電極部を一括で押圧してレベリングする
のではなく、限られた範囲、つまり突起状電極部の各１
個毎、所定範囲の複数の突起状電極部毎に押圧部にて押
圧し、突起状電極部の頂部の高さを制御するものであ
る。例えば、ウエハー状半導体装置をダイシング後に、
一つまたは複数のチップとなる各範囲内の突起状電極部
毎を押圧してバンプ高さを制御する。この方法におい
て、容易に突起状電極部の高さ精度が得られるようにな
り、さらにレベリング装置として安価で小規模の装置が
使用できるようになった。また突起状電極部の形成と高
さ制御を個別に行なうことにより、高さ精度の向上や、
ウエハー状半導体装置に用いた場合には、突起状電極部
の高さの異なる複数種のチップ状半導体装置を連続して
生産することも可能となる。 また押圧治具として、突起
状電極部の頂部を押圧する押圧部と半導体装置に当接し
て高さ制御を行なうストッパーとを備えたものを用いる
ことにより、簡単な構成で高さ制御を行なうことができ
る。 また個別に押圧できるので、押圧部の形状を変化さ
せて突起状電極部の形状を変化させることも可能とな
り、結果として突起状電極部に接着剤を転写して基板上
の電極に接合する場合の、転写性の向上も図れる。 According to the present invention, a plurality of protrusions are previously placed on a semiconductor device.
After the raised electrodes (metal bumps) are formed,
All protruding electrode parts at once and leveling
Instead of a limited range, that is, each one of the protruding electrode portions
The pressing unit presses each of the plurality of protruding electrode portions in a predetermined range.
To control the height of the top of the protruding electrode.
You. For example, after dicing a wafer-like semiconductor device,
Protruding electrode parts in each area to be one or more chips
Press each time to control the bump height. In this method, the height accuracy of the protruding electrode portion can be easily obtained, and a low-cost and small-scale device can be used as a leveling device. Also, the formation and height of the protruding electrode
By controlling the height individually, height accuracy can be improved,
When used for wafer-shaped semiconductor devices, the protruding electrode
Of multiple types of chip-shaped semiconductor devices with different heights
It will also be possible to produce. Also, as a pressing jig, a projection
The pressing part that presses the top of the electrode-shaped part and the semiconductor device
With a stopper for height control
As a result, height control can be performed with a simple configuration.
You. In addition, since it can be pressed individually, the shape of the pressed part can be changed.
It is also possible to change the shape of the protruding electrode part
As a result, the adhesive is transferred to the protruding electrode and
In the case of bonding to the above electrode, transferability can be improved.
【０００８】[0008]
【実施例】（実施例１） 以下、本発明の第１の実施例について、図面を参照しな
がら説明する。(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
【０００９】図１に示すように、ウエハー状半導体装置
１上に形成されたＡｕなどで作られた各金属バンプ２の
１個毎に対して、上方からセラミックまたは金属製の押
圧ピン３を同一の圧力で押し当て、金属バンプ２を全て
均一の高さにレベリングする。このとき、押圧ピン３の
先端は平面かつウエハー状半導体装置１の面と平行で、
その平面形状は図２に示すように円・多角形など限定し
なくてもよい。更に、半導体装置１はウエハー状態だけ
でなく、一つまたは複数のチップ状にダイシングした後
でも、同様の効果が得られる。As shown in FIG. 1, for each metal bump 2 made of Au or the like formed on a wafer-like semiconductor device 1, a pressing pin 3 made of ceramic or metal is the same from above. And the metal bumps 2 are all leveled to a uniform height. At this time, the tip of the pressing pin 3 is flat and parallel to the surface of the wafer-like semiconductor device 1,
The planar shape need not be limited to a circle or a polygon as shown in FIG. Furthermore, the same effect can be obtained not only in the wafer state but also after dicing the semiconductor device 1 into one or a plurality of chips.
【００１０】このような本実施例によれば、ワイヤボン
ディング装置のような簡便な装置に前記押圧ピン３を装
填するだけで、容易に金属バンプの高精度なバンプレベ
リングが可能となる。また、押圧ピン３の先端形状を変
えることにより、バンプ形状を自由に形成できる。ま
た、バンプ先端の面形状を変えることにより、接着剤の
転写性が向上し、基板上の電極との接触も向上すること
ができる。また、ワイヤボンディング装置ステージを１
５０℃〜３００℃にすることにより、低加圧でＡｕバン
プをレベリングでき、ニソコンヘムクラック防止にな
る。According to the present embodiment, the bump bumping of the metal bump can be easily performed with high accuracy simply by loading the pressing pin 3 into a simple device such as a wire bonding device. Further, by changing the shape of the tip of the pressing pin 3, the bump shape can be freely formed. Also, by changing the surface shape of the tip of the bump, the transferability of the adhesive can be improved, and the contact with the electrode on the substrate can be improved. Also, the stage of the wire bonding apparatus is 1
By setting the temperature to 50 ° C. to 300 ° C., the Au bump can be leveled at a low pressure, thereby preventing Niscon hem crack.
【００１１】（実施例２） 以下、本発明の第２の実施例について、図面を参照しな
がら説明する。Embodiment 2 Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
【００１２】図３に示すように、ウエハー状半導体装置
１上に形成されたＡｕなどで作られた金属バンプ２に対
し、ダイシング後に一つまたは複数のチップとなる範囲
４毎、図４のように上方からセラミックまたは金属製の
押圧ブロック５を各範囲毎に同一の圧力で押し当て、金
属バンプ２を全て均一の高さにレベリングする。このと
き、押圧ブロック５は平面かつステージ６の面と平行
で、その平面形状は円・多角形など限定しなくてもよ
い。更に、半導体装置１はウエハー状態だけでなく、一
つまたは複数のチップ状にダイシングした後でも、同様
の効果が得られる。As shown in FIG. 3, a metal bump 2 made of Au or the like formed on a wafer-like semiconductor device 1 is subjected to a dicing process to form one or a plurality of chips, as shown in FIG. Then, a pressing block 5 made of ceramic or metal is pressed from above with the same pressure for each range to level all the metal bumps 2 to a uniform height. At this time, the pressing block 5 is flat and parallel to the surface of the stage 6, and its planar shape need not be limited to a circle or a polygon. Furthermore, the same effect can be obtained not only in the wafer state but also after dicing the semiconductor device 1 into one or a plurality of chips.
【００１３】このような本実施例によれば、小型プレス
機のような簡便な装置に前記押圧ブロック５を装填する
だけで、容易に金属バンプの高精度なバンプレベリング
が可能となる。According to the present embodiment, by simply loading the pressing block 5 into a simple device such as a small press machine, highly accurate bump leveling of metal bumps can be easily performed.
【００１４】（実施例３） 以下本発明の第３の実施例について図面を参照しながら
説明する。Embodiment 3 Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.
【００１５】図５が示すように、ウエハー状半導体装置
１上に形成されたＡｕなどで作られた各金属バンプ２の
１個毎に対して、上方からセラミックまたは金属製の押
圧ピン３でたたき、各バンプ２をレベリングする。この
とき、押圧ピン３の先端は平面かつ半導体装置１の面と
平行である。更に、押圧ピン３は各バンプに対して加圧
設定できる。As shown in FIG. 5, each of the metal bumps 2 made of Au or the like formed on the wafer-like semiconductor device 1 is hit with a ceramic or metal pressing pin 3 from above. Then, each bump 2 is leveled. At this time, the tip of the pressing pin 3 is flat and parallel to the surface of the semiconductor device 1. Further, the pressing pin 3 can set the pressure to each bump.
【００１６】このような本実施例によれば、各バンプに
対しての加圧を設定することにより、１ウエハー内、ま
たは１チップ内でも異なるバンプ高さでも自由に設定す
ることができ、図６に示すようなインナーリードボンデ
ィングの多段化、段差のある基板に対応することができ
る。According to this embodiment, by setting the pressure to each bump, it is possible to freely set the bump height within one wafer, one chip, or different bumps. As shown in FIG. 6, it is possible to cope with a multi-stage inner lead bonding and a substrate having a step.
【００１７】（実施例４） 以下、本発明の第４の実施例について、図面を参照しな
がら説明する。Embodiment 4 Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings.
【００１８】図７に示すように、ウエハー状半導体装置
１上に形成されたＡｕなどで作られた各金属バンプ２の
１個毎に対して、上方からストッパー７を有したセラミ
ックまたは金属製のピン３を押し当て、バンプ２を全て
均一の高さにレベリングする。このとき、ピン３の先端
８は平面かつウエハー状半導体装置１の面と平行で、そ
の平面形状は円・多角形などに限定しなくてもよい。更
に、半導体装置１はウエハー状態だけでなく、一つまた
は複数のチップ状にダイシングした状態でも同様の効果
が得られる。As shown in FIG. 7, for each of the metal bumps 2 made of Au or the like formed on the wafer-shaped semiconductor device 1, a ceramic or metal having a stopper 7 from above is provided. The pins 3 are pressed to level all the bumps 2 to a uniform height. At this time, the tip 8 of the pin 3 is flat and parallel to the surface of the wafer-shaped semiconductor device 1, and its planar shape need not be limited to a circle or a polygon. Further, the same effect can be obtained not only in the semiconductor device 1 in a wafer state but also in a state in which one or more chips are diced.
【００１９】このような本実施例によれば、サーチレベ
ル４００μｍ、サーチスピード２０ｍｍ／ｓｅｃとし、
半導体装置１を２００℃に加熱してＩＣへの衝撃力を減
らして、ストッパー７付きのピン３でたたくことによ
り、高精度なバンプレベリングができる。According to this embodiment, the search level is 400 μm, the search speed is 20 mm / sec,
By heating the semiconductor device 1 to 200 ° C. to reduce the impact force on the IC and hitting the pins 3 with the stoppers 7, highly accurate bump leveling can be performed.
【００２０】[0020]
【発明の効果】以上の実施例の説明から明らかなように
本発明は、予め半導体装置上に複数の突起状電極部が形
成された後、前記突起状電極部の形成とは別工程で前記
各突起状電極部に対して１個毎、あるいは所定範囲の複
数の突起状電極部毎に押圧部にて押圧し、前記突起状電
極部の頂部の高さを制御するものである。 また、金属ワ
イヤの先端に形成したボールをキャピラリーによって半
導体装置の電極パッド上に固着して突起状電極部の底部
を形成し、前記金属ワイヤを突起状電極部の底部の上方
でルーピングしてその端部を切断し、突起状電極部の頂
部を形成する第１工程と、第１工程により前記半導体装
置上に複数の突起状電極部が形成する第２工程と、第２
工程後、前記各突起状電極部に対して１個毎、あるいは
所定範囲の複数の突起状電極部毎に前記キャピラリーと
は別体の押圧部にて押圧し、前記突起状電極部の頂部の
高さを制御するものである。 また、予め半導体装置上に
複数の突起状電極部が形成された後、前記各突起状電極
部に対して１個毎、あるいは所定範囲の複数の突起状電
極部毎に押圧治具にて押圧し、前記突起状電極部の頂部
の高さを制御するものであり、前記押圧治具は、前記突
起状電極部の頂部を押圧する押圧部と前記半導体装置に
当接して高さ制御を行なうストッパーとを有するもので
ある。 また、押圧部は半導体装置内の突起状電極部の高
さを異なる高さに制御するものである。 この構成によ
り、予め半導体装置上に複数の突起状電極部（金属バン
プ）が形成した後、半導体装置上の全ての突起状電極部
を一括で押圧してレベリングするのではなく、限られた
範囲、つまり突起状電極部の各１個毎、所定範囲の複数
の突起状電極部毎に押圧部にて押圧し、突起状電極部の
頂部の高さを制御するものである。 例えば、ウエハー
状半導体装置をダイシング後に、一つまたは複数のチッ
プとなる各範囲内の突起状電極部毎を押圧してバンプ高
さを制御でき、容易に、しかも高度な突起状電極部の高
さ精度が得られるようになり、さらにレベリング装置と
して安価で小規模の装置が使用できる。 またウエハー状
半導体装置に用いた場合には、突起状電極部の高さの異
なる複数種のチップ状半導体装置を連続して生産するこ
とも可能となる。 また押圧治具として、突起状電極部の
頂部を押圧する押圧部と半導体装置に当 接して高さ制御
を行なうストッパーとを備えたものを用いることによ
り、簡単な構成で高さ制御を行なうことができる。 また
半導体装置上に複数の突起状電極部が形成された後、前
記突起状電極部に対して押圧部にて押圧して前記突起状
電極部の頂部の高さを制御する際に、前記押圧部の形状
を変化させて突起状電極部の形状を変化させ、前記突起
状電極部に接着剤を転写して基板上の電極に接合させる
ことにより、押圧部の形状を変化させて突起状電極部の
形状を変化させることも可能となり、結果として突起状
電極部に接着剤を転写して基板上の電極に接合する場合
の、転写性の向上も図れる。 As is clear from the above description of the embodiment, the present invention provides that a plurality of protruding electrode portions are formed on a semiconductor device in advance.
After being formed, the process is performed in a separate process from the formation of the protruding electrode portion.
For each protruding electrode part,
The number of the protruding electrodes is pressed by the pressing portion for each of the protruding electrodes.
The height of the top of the pole is controlled. In addition, metal
The ball formed at the tip of the ear is cut in half by a capillary.
The bottom of the protruding electrode portion fixed on the electrode pad of the conductor device
Forming the metal wire above the bottom of the protruding electrode portion.
And cut the end of the protruding electrode.
A first step of forming a portion, and the semiconductor device is formed by the first step.
A second step of forming a plurality of protruding electrode portions on the device;
After the process, for each of the protruding electrode portions, or
The capillary for each of a plurality of protruding electrode portions in a predetermined range;
Is pressed by a separate pressing portion, and the top of the protruding electrode portion is
It controls the height. Also, beforehand on the semiconductor device
After a plurality of protruding electrode portions are formed, each of the protruding electrode portions is
A plurality of protruding electrodes for each part or within a predetermined range.
Press with a pressing jig for each pole part, the top of the protruding electrode part
The pressing jig is configured to control the height of
A pressing portion for pressing the top of the raised electrode portion and the semiconductor device;
With a stopper to control the height by contact
is there. Further, the pressing portion is at a height of the protruding electrode portion in the semiconductor device.
The height is controlled to a different height. With this configuration
A plurality of protruding electrode portions (metal bumps)
Is formed, and all the protruding electrode portions on the semiconductor device are formed.
Instead of pressing all at once to perform leveling.
Range, that is, a plurality of predetermined ranges for each one of the protruding electrode portions
Is pressed by the pressing portion for each protruding electrode portion of
It controls the height of the top. For example, a wafer
After dicing the semiconductor device, one or more chips
Press each of the protruding electrode portions within each range to
The height of the protruding electrode can be controlled easily and
Accuracy can be obtained, and with the leveling device
Inexpensive and small-scale equipment can be used. Also in wafer form
When used in semiconductor devices, the height of the protruding electrode
Continuous production of multiple types of chip-shaped semiconductor devices
Both are possible. In addition, as a pressing jig,
Height control by contacting the pressing part pressing the top and the semiconductor device
By using a stopper with
Thus, height control can be performed with a simple configuration. Also
After a plurality of protruding electrode portions are formed on the semiconductor device,
The protruding electrode is pressed by the pressing portion against the protruding electrode.
When controlling the height of the top of the electrode part, the shape of the pressing part
Is changed to change the shape of the protruding electrode portion.
Adhesive is transferred to the shape of the electrode and joined to the electrode on the substrate
By changing the shape of the pressing part,
It is also possible to change the shape, as a result
When transferring the adhesive to the electrode and joining it to the electrode on the substrate
However, transferability can be improved.
【図１】本発明の第１の実施例における金属バンプ１個
毎に対するバンプレベリング状態を示す制御図FIG. 1 is a control diagram showing a bump leveling state for each metal bump in a first embodiment of the present invention.
【図２】（ａ）同実施例における押圧ピンの第１の先端
形状と、これを用いて押圧したバンプ形状の関係を示す
説明図 （ｂ）同実施例における押圧ピンの第２の先端形状と、
これを用いて押圧したバンプ形状の関係を示す説明図 （ｃ）同実施例における押圧ピンの第３の先端形状と、
これを用いて押圧したバンプ形状の関係を示す説明図 （ｄ）同実施例における押圧ピンの第４の先端形状と、
これを用いて押圧したバンプ形状の関係を示す説明図FIG. 2A is an explanatory view showing a relationship between a first tip shape of a pressing pin in the embodiment and a bump shape pressed by using the same. (B) A second tip shape of the pressing pin in the embodiment. When,
Explanatory drawing showing the relationship between the shape of the bump pressed by using this. (C) The third tip shape of the pressing pin in the embodiment,
Explanatory drawing showing the relationship between the shape of the bump pressed by using this. (D) The fourth tip shape of the pressing pin in the embodiment,
Explanatory drawing showing the relationship between bump shapes pressed using this
【図３】本発明の第２の実施例におけるウエハーを示す
斜視図FIG. 3 is a perspective view showing a wafer according to a second embodiment of the present invention.
【図４】同実施例における複数金属バンプに対するバン
プレベリング状態を示す側面図FIG. 4 is a side view showing a bump leveling state for a plurality of metal bumps in the embodiment.
【図５】本発明の第３の実施例におけるバンプ１個毎に
対してバンプ高さを変えてレベリングしたバンプを示す
側面図FIG. 5 is a side view showing a bump leveled by changing the bump height for each bump in the third embodiment of the present invention.
【図６】（ａ）同実施例における多段化されたインナー
リードの側面図 （ｂ）同実施例における段差のある基板へのフリップチ
ップ実装状態を示す側面図FIG. 6A is a side view of a multi-stage inner lead according to the embodiment. FIG. 6B is a side view illustrating a flip-chip mounting state on a stepped substrate according to the embodiment.
【図７】本発明の第４の実施例におけるストッパーを有
するピンによる、バンプレベリングを示す説明図FIG. 7 is an explanatory view showing bump leveling by a pin having a stopper according to a fourth embodiment of the present invention.
【図８】従来の金属バンプのバンプレベリング状態を示
す説明図FIG. 8 is an explanatory view showing a bump leveling state of a conventional metal bump.
１ 半導体装置 ２ 金属バンプ ３ 押圧ピン ４ ダイシング後に一つまたは複数のチップとなる範
囲 ５ 押圧ブロック ６ ステージ ７ 押圧プレート ８ 押圧ピン先端DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Metal bump 3 Press pin 4 Range which becomes one or more chips after dicing 5 Press block 6 Stage 7 Press plate 8 Tip of press pin
───────────────────────────────────────────────────── フロントページの続き (72)発明者 北山 喜文 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平４−130634（ＪＰ，Ａ) 特開 平４−123434（ＪＰ，Ａ) 特開 平２−275650（ＪＰ，Ａ) 特開 平３−196634（ＪＰ，Ａ) 特開 平３−185730（ＪＰ，Ａ) 特開 平１−296646（ＪＰ，Ａ) 特開 昭59−89438（ＪＰ，Ａ) 実開 平５−57844（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshifumi Kitayama 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. (56) References JP-A-4-130634 (JP, A) JP-A-4- 123434 (JP, A) JP-A-2-275650 (JP, A) JP-A-3-196634 (JP, A) JP-A-3-185730 (JP, A) JP-A-1-296646 (JP, A) JP-A-59-89438 (JP, A) JP-A-5-57844 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60
Claims (7)
が形成された後、前記突起状電極部の形成とは別工程で
前記各突起状電極部に対して１個毎、あるいは所定範囲
の複数の突起状電極部毎に押圧部にて押圧し、前記突起
状電極部の頂部の高さを制御する電気的接続接点形成方
法。 A plurality of protruding electrode portions on a semiconductor device in advance;
Is formed, in a step different from the formation of the protruding electrode portion.
One for each of the protruding electrode portions, or a predetermined range
Pressing each of the plurality of protruding electrode portions with a pressing portion,
Method of forming electrical connection contacts to control the height of the top of the electrode
Law.
ャピラリーによって半導体装置の電極パッド上に固着し
て突起状電極部の底部を形成し、前記金属ワイヤを突起
状電極部の底部の上方でルーピングしてその端部を切断
し、突起状電極部の頂部を形成する第１工程と、第１工
程により前記半導体装置上に複数の突起状電極部が形成
する第２工程と、第２工程後、前記各突起状電極部に対
して１個毎、あるいは所定範囲の複数の突起状電極部毎
に前記キャピラリーとは別体の押圧部にて押圧し、前記
突起状電極部の頂部の高さを制御する電気的接続接点形
成方法。 2. A ball formed at the tip of a metal wire is keyed.
Fixed on the electrode pad of the semiconductor device by capillary
To form the bottom of the protruding electrode portion, and project the metal wire
Loop above the bottom of the electrode and cut the end
A first step of forming a top of the protruding electrode portion;
A plurality of protruding electrode portions are formed on the semiconductor device depending on the process.
A second step of performing, and after the second step,
And one or a plurality of protruding electrode portions in a predetermined range.
Pressing with a pressing part separate from the capillary,
Electrical connection contact type that controls the height of the top of the protruding electrode
Method.
が形成された後、前記各突起状電極部に対して１個毎、
あるいは所定範囲の複数の突起状電極部毎に押圧治具に
て押圧し、前記突起状電極部の頂部の高さを制御するも
のであり、前記押圧治具は、前記突起状電極部の頂部を
押圧する押圧部と前記半導体装置に当接して高さ制御を
行なうストッパーとを有する電気的接続接点形成方法。3. A plurality of protruding electrode portions on a semiconductor device in advance.
Is formed, one for each of the protruding electrode portions,
Alternatively, a pressing jig is used for each of a plurality of protruding electrode portions in a predetermined range.
To control the height of the top of the protruding electrode portion.
The pressing jig is configured such that the top of the protruding electrode portion is
The height control is performed by contacting the pressing portion to press with the semiconductor device.
And a method for forming an electrical connection contact having a stopper .
エハー状半導体装置であり、前記半導体装置を１つ又は
複数のチップ状の半導体装置にダイシング後、その個別
になった半導体装置毎に突起状電極部を押圧部により押
圧する請求項１〜３記載のいずれか１項に記載の電気的
接続接点形成方法。4. The semiconductor device according to claim 1, wherein the projection-shaped electrode portion is formed.
An energy semiconductor device, wherein the semiconductor device is one or more
After dicing into multiple chip-shaped semiconductor devices,
The protruding electrode portion is pressed by the pressing portion for each semiconductor device
The method for forming an electrical connection contact according to claim 1, wherein the pressing is performed .
エハー状半導体装置であり、前記半導体装置をダイシン
グにより１つ又は複数のチップ状の半導体装置となる各
範囲内の突起状電極毎に押圧する請求項１〜３記載のい
ずれか１項に記載の電気的接続接点形成方法。5. A semiconductor device according to claim 1, wherein the projection-shaped electrode portion is formed.
An semiconductor device having an energy-efficient semiconductor device, wherein the semiconductor device is
One or more chip-shaped semiconductor devices
4. The method according to claim 1, wherein each of the protruding electrodes within the range is pressed.
The method for forming an electrical connection contact according to claim 1 .
高さを異なる高さに制 御する請求項１〜５のいずれか１
項に記載の電気的接続接点形成方法。6. A pressing portion of a protruding electrode portion in a semiconductor device.
Control height at different heights Gosuru claim 1 1
Item 13. The method for forming an electrical connection contact according to Item 1 .
成された後、前記突起状電極部に対して押圧部にて押圧
して前記突起状電極部の頂部の高さを制御する際に、前
記押圧部の形状を変化させて突起状電極部の形状を変化
させ、前記突起状電極部に接着剤を転写して基板上の電
極に接合させる半導体装置の接合方法。 7. A plurality of protruding electrode portions are formed on a semiconductor device.
After being formed, a pressing portion presses the protruding electrode portion.
When controlling the height of the top of the protruding electrode portion
Change the shape of the protruding electrode part by changing the shape of the pressing part
Then, an adhesive is transferred to the protruding electrode portion, and the electrode on the substrate is transferred.
A method for bonding a semiconductor device to be bonded to a pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26215193A JP3303474B2 (en) | 1993-10-20 | 1993-10-20 | Method for forming electrical connection contact and method for bonding semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26215193A JP3303474B2 (en) | 1993-10-20 | 1993-10-20 | Method for forming electrical connection contact and method for bonding semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07115094A JPH07115094A (en) | 1995-05-02 |
| JP3303474B2 true JP3303474B2 (en) | 2002-07-22 |
Family
ID=17371771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26215193A Expired - Fee Related JP3303474B2 (en) | 1993-10-20 | 1993-10-20 | Method for forming electrical connection contact and method for bonding semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3303474B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4796601B2 (en) * | 1998-03-12 | 2011-10-19 | 富士通セミコンダクター株式会社 | Manufacturing method of contactor for electronic parts |
| JP2007048971A (en) * | 2005-08-10 | 2007-02-22 | Seiko Epson Corp | Method of manufacturing semiconductor device |
| JP2006258826A (en) * | 2006-06-20 | 2006-09-28 | Advantest Corp | Bump forming method and bump |
-
1993
- 1993-10-20 JP JP26215193A patent/JP3303474B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07115094A (en) | 1995-05-02 |
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