JPS61251217A - Microwave range amplifier - Google Patents
Microwave range amplifierInfo
- Publication number
- JPS61251217A JPS61251217A JP9160485A JP9160485A JPS61251217A JP S61251217 A JPS61251217 A JP S61251217A JP 9160485 A JP9160485 A JP 9160485A JP 9160485 A JP9160485 A JP 9160485A JP S61251217 A JPS61251217 A JP S61251217A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- amplifier
- input
- amplifier element
- amplification element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明は発振に対する安定性を向上させた増幅器に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an amplifier with improved stability against oscillation.
〈従来技術〉
一般に、パッケージ付のFET (又はバイポーラトラ
ンジスタ)からなる増幅素子を用いてマイクロ波増幅器
を構成する場合、誘電体基板上に導体パターンを形成し
てなるマイクロ・ストリップ線路の上に上記増幅素子を
載置して装着する方式が広く採用されている。第2図は
上記増幅器の従来構造を示している。第2図(a)は上
面図、同図(b)はそのc−c’線での断面図、同図(
c)はそのD−D’線での断面図を示したものである。<Prior art> Generally, when constructing a microwave amplifier using an amplification element consisting of a packaged FET (or bipolar transistor), the above-mentioned A method in which the amplification element is placed and attached is widely adopted. FIG. 2 shows the conventional structure of the above amplifier. FIG. 2(a) is a top view, FIG. 2(b) is a sectional view taken along the line c-c', and FIG.
c) shows a cross-sectional view taken along line DD'.
同図で1は入力整合回路、3はFET又はバイポーラト
ランジスタからなるパッケージ付増幅素子、4は該増幅
素子3の接地端子、5はストリップ線路の接地電極#6
は出力整合回路、8は誘電体基板。In the figure, 1 is an input matching circuit, 3 is an amplification element with a package made of FET or bipolar transistor, 4 is a ground terminal of the amplification element 3, and 5 is a ground electrode #6 of a strip line.
is an output matching circuit, and 8 is a dielectric substrate.
9は電磁遮蔽板である。9 is an electromagnetic shielding plate.
ここで、マイクロ・ストリップ線路上にパッケージ付増
幅素子を電磁遮蔽することなく装着した場合は上記スト
リップ線路を信号が伝送することによって生じる電磁界
のために上記増幅素子の入出力が電磁結合し、発振する
場合がしばしば生ずるので、従来では@2図に見られる
様に電磁遮蔽板9を増幅素子3の入出力間に設けること
で電磁結合を軽減してきた。しかし、マイクロ・ストリ
ップ線路では電磁界が線路近傍に集中しているため、上
記従来例の様に電磁遮蔽板9を増幅素子3のパッケージ
上に配置する方法では、誘電体基板8の入出力線路近傍
に上記増幅素子3のパッケ−ジに応じた隙間(斜線部分
a)が生じ、このパッケージ部との隙間aを介して上記
増幅素子3の入出力間が電磁結合し増幅器が発振すると
いう大きな問題があった。Here, when a packaged amplification element is mounted on a microstrip line without electromagnetic shielding, the input and output of the amplification element are electromagnetically coupled due to the electromagnetic field generated by the signal transmission through the strip line. Since oscillation often occurs, electromagnetic coupling has conventionally been reduced by providing an electromagnetic shielding plate 9 between the input and output of the amplification element 3, as shown in Figure @2. However, in a microstrip line, the electromagnetic field is concentrated near the line, so the method of arranging the electromagnetic shielding plate 9 on the package of the amplifying element 3 as in the conventional example described above does not allow the input/output line of the dielectric substrate 8 to A gap (shaded area a) corresponding to the package of the amplification element 3 is created nearby, and the input and output of the amplification element 3 are electromagnetically coupled through the gap a with the package, causing the amplifier to oscillate. There was a problem.
〈発明の目的〉
本発明は上記問題点を克服するためになされたものであ
り、増幅素子の入出力間の電磁結合を防止することで発
振に対する安定性が極めて優れたマイクロ波帯増幅器を
提供することを目的とする。<Object of the Invention> The present invention has been made to overcome the above-mentioned problems, and provides a microwave band amplifier with extremely excellent stability against oscillation by preventing electromagnetic coupling between the input and output of the amplifying element. The purpose is to
〈実施例〉
以下、本発明の実施例について図面を用いて詳細に説明
する・
第1図に本発明に係るマイクロ波帯増幅器の一実施例を
示す。同図(a)は上面図、同図(b)はそのA−A’
線での断面図、同図(c)はそのB−B’線での断面図
である。同図で2は電磁遮蔽板、7は誘電体基板8に設
けられた増幅素子3の埋め込み用の穴である。尚、同図
において#J2図と同一部分は同一記号で示す。<Embodiments> Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an embodiment of a microwave band amplifier according to the present invention. The figure (a) is a top view, and the figure (b) is its A-A'
A cross-sectional view taken along the line, and FIG. 3(c) is a cross-sectional view taken along the line BB'. In the figure, 2 is an electromagnetic shielding plate, and 7 is a hole provided in a dielectric substrate 8 for embedding the amplifying element 3. In this figure, the same parts as in Figure #J2 are indicated by the same symbols.
この実施例において、第2図の従来例と太き(異なるの
は誘電体基板8にパッケージ付増幅素子3を埋め込むた
めの穴7が設けられており、その穴7に上記増幅素子3
を上下逆にして埋め込み、さらに電磁遮蔽板2を上記増
幅素子3の接地端子4上に完全に密着させた点である。In this embodiment, the dielectric substrate 8 is provided with a hole 7 for embedding the amplifying element 3 with a package, which is thicker than the conventional example shown in FIG.
is buried upside down, and the electromagnetic shielding plate 2 is completely brought into close contact with the ground terminal 4 of the amplifying element 3.
従来例では上記の様に増幅素子3のパッケージが誘電体
基板8上に突出した形で装着されていたため、電磁遮蔽
板9には必ず上記増幅素子3のパッケージの断面形状に
応じた隙間aが、上記誘電体基板上の最も電磁界の集中
している近傍部分に生じ、上記増幅素子3の入出力間を
完全に電磁遮蔽することが不可能であった。しかし、こ
の実施例では増幅素子3は誘電体基板8に形成された穴
7に埋め込まれているため、上記誘電体基板8の上面は
平担となり、電磁遮蔽板2は上記誘電体基板8上に上記
増幅素子3の接地電極4を介して密着させることができ
るため、従来は不可能であった増幅素子3の入出力間の
完全な電磁遮蔽を容易に実現できるものである。その結
果、従来よりの大きな問題点であった増幅素子の入出力
間の、電磁結合によって生じる発振が発生しない、極め
て安定な増幅器を得ることができるものである。In the conventional example, as described above, the package of the amplification element 3 was mounted on the dielectric substrate 8 in a protruding manner, so the electromagnetic shielding plate 9 always had a gap a corresponding to the cross-sectional shape of the package of the amplification element 3. , which occurs near the portion of the dielectric substrate where the electromagnetic field is most concentrated, making it impossible to completely electromagnetically shield the input and output of the amplification element 3. However, in this embodiment, since the amplification element 3 is embedded in the hole 7 formed in the dielectric substrate 8, the upper surface of the dielectric substrate 8 is flat, and the electromagnetic shielding plate 2 is placed on the dielectric substrate 8. Since the amplification element 3 can be brought into close contact with the amplification element 3 through the ground electrode 4, complete electromagnetic shielding between the input and output of the amplification element 3, which was previously impossible, can be easily realized. As a result, it is possible to obtain an extremely stable amplifier that does not generate oscillations caused by electromagnetic coupling between the input and output of the amplifier element, which has been a major problem in the past.
〈発明の効果〉
以上に説明した如く本発明によれば、増幅器の入出力間
の電磁結合のために生じる発振を防止できるという極め
て有効な利点を有する。<Effects of the Invention> As explained above, the present invention has an extremely effective advantage of being able to prevent oscillations caused by electromagnetic coupling between input and output of an amplifier.
第1図は本発明に係るマイクロ波帯増幅器の一実施例を
示し、同図(a)は上面図、同図色)はA−A’線での
断面図、同図(c)はB−B’線での断面図、第2図は
従来のマイクロ波帯増幅器を示し、同一(a)は上面図
、同図(b)はc−c’線での断面図、同図(c)はD
−D’線での断面図を示す。
図中、
l:入力整合回路、 2:電磁遮蔽板、3:増幅素子、
4:接地端子、
5:接地電極、 6:出力整合回路、7:穴、
8:@電体基板。
代理人 弁理士 福 士 愛 彦(他2名)vE1図FIG. 1 shows an embodiment of a microwave band amplifier according to the present invention, in which (a) is a top view, (color) is a cross-sectional view taken along line A-A', and (c) is a cross-sectional view taken along line A-A'. 2 shows a conventional microwave band amplifier, FIG. 2 (a) is a top view, and FIG. ) is D
A cross-sectional view taken along the -D' line is shown. In the figure, l: input matching circuit, 2: electromagnetic shielding plate, 3: amplifier element,
4: Ground terminal, 5: Ground electrode, 6: Output matching circuit, 7: Hole,
8: @Electric board. Agent Patent attorney Aihiko Fuku (2 others) vE1 diagram
Claims (1)
信号端子部を上側にて増幅素子を埋め込み、該増幅素子
上に該増幅素子の接地端子を介して電磁遮蔽板を載置し
たことを特徴とするマイクロ波帯増幅器。1. Form a hole in the substrate for embedding the amplification element, embed the amplification element in the hole with the signal terminal section on the upper side, and place an electromagnetic shielding plate over the amplification element via the ground terminal of the amplification element. A microwave band amplifier characterized by the following.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9160485A JPS61251217A (en) | 1985-04-27 | 1985-04-27 | Microwave range amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9160485A JPS61251217A (en) | 1985-04-27 | 1985-04-27 | Microwave range amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61251217A true JPS61251217A (en) | 1986-11-08 |
Family
ID=14031162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9160485A Pending JPS61251217A (en) | 1985-04-27 | 1985-04-27 | Microwave range amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61251217A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0876088A2 (en) * | 1997-05-02 | 1998-11-04 | NEC Corporation | Semiconductor microwave amplifier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638802U (en) * | 1979-09-04 | 1981-04-11 |
-
1985
- 1985-04-27 JP JP9160485A patent/JPS61251217A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638802U (en) * | 1979-09-04 | 1981-04-11 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0876088A2 (en) * | 1997-05-02 | 1998-11-04 | NEC Corporation | Semiconductor microwave amplifier |
EP0876088A3 (en) * | 1997-05-02 | 1999-10-27 | NEC Corporation | Semiconductor microwave amplifier |
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