JPS61250173A - タングステンシリサイド膜の成長方法 - Google Patents
タングステンシリサイド膜の成長方法Info
- Publication number
- JPS61250173A JPS61250173A JP9036385A JP9036385A JPS61250173A JP S61250173 A JPS61250173 A JP S61250173A JP 9036385 A JP9036385 A JP 9036385A JP 9036385 A JP9036385 A JP 9036385A JP S61250173 A JPS61250173 A JP S61250173A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten silicide
- gaseous
- substrate
- film
- silicide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9036385A JPS61250173A (ja) | 1985-04-25 | 1985-04-25 | タングステンシリサイド膜の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9036385A JPS61250173A (ja) | 1985-04-25 | 1985-04-25 | タングステンシリサイド膜の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61250173A true JPS61250173A (ja) | 1986-11-07 |
| JPH0421751B2 JPH0421751B2 (enExample) | 1992-04-13 |
Family
ID=13996453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9036385A Granted JPS61250173A (ja) | 1985-04-25 | 1985-04-25 | タングステンシリサイド膜の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61250173A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01259173A (ja) * | 1988-04-08 | 1989-10-16 | Tokyo Electron Ltd | 化学的気相成長方法 |
| USRE39895E1 (en) | 1994-06-13 | 2007-10-23 | Renesas Technology Corp. | Semiconductor integrated circuit arrangement fabrication method |
-
1985
- 1985-04-25 JP JP9036385A patent/JPS61250173A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01259173A (ja) * | 1988-04-08 | 1989-10-16 | Tokyo Electron Ltd | 化学的気相成長方法 |
| USRE39895E1 (en) | 1994-06-13 | 2007-10-23 | Renesas Technology Corp. | Semiconductor integrated circuit arrangement fabrication method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0421751B2 (enExample) | 1992-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5151305A (en) | Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride | |
| US5240739A (en) | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers | |
| US4923715A (en) | Method of forming thin film by chemical vapor deposition | |
| JP3740508B2 (ja) | 窒化チタンのプラズマエンハンスアニール処理 | |
| US9159608B2 (en) | Method for forming TiSiN thin film layer by using atomic layer deposition | |
| US4766006A (en) | Low pressure chemical vapor deposition of metal silicide | |
| US5232872A (en) | Method for manufacturing semiconductor device | |
| GB2148946A (en) | Metal-silicide deposition using plasma-enhanced chemical vapour deposition | |
| JP2003526218A (ja) | 傾斜薄膜 | |
| JP2002124488A (ja) | W(co)6からのタングステン膜の堆積方法 | |
| US6174805B1 (en) | Titanium film forming method | |
| JPS61250173A (ja) | タングステンシリサイド膜の成長方法 | |
| KR930005947B1 (ko) | 반도체장치 제조방법 | |
| JPH09260306A (ja) | 薄膜形成方法 | |
| KR0161889B1 (ko) | 반도체장치의 배선 형성방법 | |
| JP3194256B2 (ja) | 膜成長方法と膜成長装置 | |
| JPS61250172A (ja) | タングステンシリサイド膜の成長方法 | |
| JPS63109172A (ja) | メタルシリサイドの低圧化学蒸着 | |
| KR940010412B1 (ko) | 박막형성방법 | |
| JPH03278431A (ja) | 半導体装置の製造方法 | |
| KR950007671B1 (ko) | 텅스텐 박막의 증착방법 | |
| JP2841449B2 (ja) | ビアホール内配線およびその形成方法 | |
| JP2000040675A (ja) | 半導体装置の製造方法およびそれによる半導体装置 | |
| JPS61198628A (ja) | タングステン膜の選択成長方法 | |
| JPS61203652A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |