JPS61239598A - 薄膜ｅｌ素子 - Google Patents
薄膜ｅｌ素子Info
- Publication number
- JPS61239598A JPS61239598A JP60079900A JP7990085A JPS61239598A JP S61239598 A JPS61239598 A JP S61239598A JP 60079900 A JP60079900 A JP 60079900A JP 7990085 A JP7990085 A JP 7990085A JP S61239598 A JPS61239598 A JP S61239598A
- Authority
- JP
- Japan
- Prior art keywords
- light absorption
- layer
- absorption layer
- light
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 49
- 230000031700 light absorption Effects 0.000 claims description 115
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 76
- 229910052757 nitrogen Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052732 germanium Inorganic materials 0.000 claims description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 22
- 229910001873 dinitrogen Inorganic materials 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 15
- 238000005546 reactive sputtering Methods 0.000 description 15
- 230000008033 biological extinction Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 235000007173 Abies balsamea Nutrition 0.000 description 1
- 244000283070 Abies balsamea Species 0.000 description 1
- 240000002234 Allium sativum Species 0.000 description 1
- 101100215647 Aspergillus flavus (strain ATCC 200026 / FGSC A1120 / IAM 13836 / NRRL 3357 / JCM 12722 / SRRC 167) aflR gene Proteins 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- -1 Ni 8 Chemical class 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000004611 garlic Nutrition 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60079900A JPS61239598A (ja) | 1985-04-15 | 1985-04-15 | 薄膜ｅｌ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60079900A JPS61239598A (ja) | 1985-04-15 | 1985-04-15 | 薄膜ｅｌ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61239598A true JPS61239598A (ja) | 1986-10-24 |
| JPH0326919B2 JPH0326919B2 (enrdf_load_stackoverflow) | 1991-04-12 |
Family
ID=13703153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60079900A Granted JPS61239598A (ja) | 1985-04-15 | 1985-04-15 | 薄膜ｅｌ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61239598A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854583A (ja) * | 1981-09-29 | 1983-03-31 | 日本精機株式会社 | 電界発光素子 |
| JPS6240837A (ja) * | 1985-08-19 | 1987-02-21 | Fujitsu Ltd | 誤り率測定器 |
-
1985
- 1985-04-15 JP JP60079900A patent/JPS61239598A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854583A (ja) * | 1981-09-29 | 1983-03-31 | 日本精機株式会社 | 電界発光素子 |
| JPS6240837A (ja) * | 1985-08-19 | 1987-02-21 | Fujitsu Ltd | 誤り率測定器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0326919B2 (enrdf_load_stackoverflow) | 1991-04-12 |
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