JPS6123313A - 多結晶シリコンウエハの製造皿用離型剤層形成方法 - Google Patents
多結晶シリコンウエハの製造皿用離型剤層形成方法Info
- Publication number
- JPS6123313A JPS6123313A JP59143965A JP14396584A JPS6123313A JP S6123313 A JPS6123313 A JP S6123313A JP 59143965 A JP59143965 A JP 59143965A JP 14396584 A JP14396584 A JP 14396584A JP S6123313 A JPS6123313 A JP S6123313A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- melt
- release agent
- mold release
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 title claims description 3
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- 239000000243 solution Substances 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- 239000006082 mold release agent Substances 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 238000007711 solidification Methods 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 230000008023 solidification Effects 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 101150006573 PAN1 gene Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- FHTQCUNSKSWOHF-UHFFFAOYSA-N ethyl carbamate;silicon Chemical compound [Si].CCOC(N)=O FHTQCUNSKSWOHF-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143965A JPS6123313A (ja) | 1984-07-11 | 1984-07-11 | 多結晶シリコンウエハの製造皿用離型剤層形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143965A JPS6123313A (ja) | 1984-07-11 | 1984-07-11 | 多結晶シリコンウエハの製造皿用離型剤層形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6123313A true JPS6123313A (ja) | 1986-01-31 |
| JPH038578B2 JPH038578B2 (enrdf_load_stackoverflow) | 1991-02-06 |
Family
ID=15351169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59143965A Granted JPS6123313A (ja) | 1984-07-11 | 1984-07-11 | 多結晶シリコンウエハの製造皿用離型剤層形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6123313A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0484467A (ja) * | 1990-07-27 | 1992-03-17 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| CN1073005C (zh) * | 1996-12-19 | 2001-10-17 | 艾利森电话股份有限公司 | 制备弹性凸起的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56129377A (en) * | 1980-03-14 | 1981-10-09 | Agency Of Ind Science & Technol | Manufacture of polycrystalline silicone semiconductor |
| JPS57181175A (en) * | 1981-04-30 | 1982-11-08 | Hoxan Corp | Manufacture of polycrystalline silicon wafer |
-
1984
- 1984-07-11 JP JP59143965A patent/JPS6123313A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56129377A (en) * | 1980-03-14 | 1981-10-09 | Agency Of Ind Science & Technol | Manufacture of polycrystalline silicone semiconductor |
| JPS57181175A (en) * | 1981-04-30 | 1982-11-08 | Hoxan Corp | Manufacture of polycrystalline silicon wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0484467A (ja) * | 1990-07-27 | 1992-03-17 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| CN1073005C (zh) * | 1996-12-19 | 2001-10-17 | 艾利森电话股份有限公司 | 制备弹性凸起的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH038578B2 (enrdf_load_stackoverflow) | 1991-02-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |