JPS61223721A - Manufacture of liquid crystal display device - Google Patents

Manufacture of liquid crystal display device

Info

Publication number
JPS61223721A
JPS61223721A JP60061857A JP6185785A JPS61223721A JP S61223721 A JPS61223721 A JP S61223721A JP 60061857 A JP60061857 A JP 60061857A JP 6185785 A JP6185785 A JP 6185785A JP S61223721 A JPS61223721 A JP S61223721A
Authority
JP
Japan
Prior art keywords
film
liquid crystal
optical
oxidation
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60061857A
Inventor
Kyozo Ide
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60061857A priority Critical patent/JPS61223721A/en
Publication of JPS61223721A publication Critical patent/JPS61223721A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To facilitate the manufacturing step and to mass-produce by forming an insulating layer on an optical stopping film contacting with a liquid crystal cell, with an oxidation.
CONSTITUTION: The thin film transistor TFT and the display picture element electrode 7 are arranged on the substrate 1 in a matrix state to form the first electrode substrate and the insulating film 8 is coated on the first electrode substrate, and then a metal such as a aluminium is vapor-deposited and is etched to a pattern so as to cover an upper part of TFT, to form the optical stopping film 9 contacting with the liquid crystal 13. The formation of the insulting layer on the optical stopping film 9 is performed by the oxidative treatment according to the anodic oxidation resulting in the formation of the oxidation film 10. Accordingly, the method as mentioned above, makes the step very easy and improves the mass production, on comparing with the earlier method in which the insulating layer is formed with the vapor-deposition or the sputtering method.
COPYRIGHT: (C)1986,JPO&Japio
JP60061857A 1985-03-28 1985-03-28 Manufacture of liquid crystal display device Pending JPS61223721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60061857A JPS61223721A (en) 1985-03-28 1985-03-28 Manufacture of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60061857A JPS61223721A (en) 1985-03-28 1985-03-28 Manufacture of liquid crystal display device

Publications (1)

Publication Number Publication Date
JPS61223721A true JPS61223721A (en) 1986-10-04

Family

ID=13183188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60061857A Pending JPS61223721A (en) 1985-03-28 1985-03-28 Manufacture of liquid crystal display device

Country Status (1)

Country Link
JP (1) JPS61223721A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174015A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Thin film transistor liquid crystal display device and its manufacture
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174015A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Thin film transistor liquid crystal display device and its manufacture
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7034381B2 (en) 1995-12-14 2006-04-25 Semiconductor Energey Laboratory Co., Ltd. Semiconductor device
US7202551B2 (en) 1995-12-14 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Display device having underlying insulating film and insulating films

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