JPS61222986A - 結晶成長膜厚制御法 - Google Patents
結晶成長膜厚制御法Info
- Publication number
- JPS61222986A JPS61222986A JP16912584A JP16912584A JPS61222986A JP S61222986 A JPS61222986 A JP S61222986A JP 16912584 A JP16912584 A JP 16912584A JP 16912584 A JP16912584 A JP 16912584A JP S61222986 A JPS61222986 A JP S61222986A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- crystal
- crystal growth
- composition ratio
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims description 23
- 230000008859 change Effects 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 4
- 239000000835 fiber Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000004907 flux Effects 0.000 description 24
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- 230000010355 oscillation Effects 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000097 high energy electron diffraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000000232 gallbladder Anatomy 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16912584A JPS61222986A (ja) | 1984-08-13 | 1984-08-13 | 結晶成長膜厚制御法 |
| US07/092,348 US4855013A (en) | 1984-08-13 | 1987-09-02 | Method for controlling the thickness of a thin crystal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16912584A JPS61222986A (ja) | 1984-08-13 | 1984-08-13 | 結晶成長膜厚制御法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24511090A Division JPH03115190A (ja) | 1990-09-14 | 1990-09-14 | 混晶組成比決定法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222986A true JPS61222986A (ja) | 1986-10-03 |
| JPH0331677B2 JPH0331677B2 (enExample) | 1991-05-08 |
Family
ID=15880743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16912584A Granted JPS61222986A (ja) | 1984-08-13 | 1984-08-13 | 結晶成長膜厚制御法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222986A (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4874484A (enExample) * | 1972-01-12 | 1973-10-06 | ||
| JPS6356199A (ja) * | 1986-08-25 | 1988-03-10 | Omron Tateisi Electronics Co | パルスモ−タ制御装置 |
-
1984
- 1984-08-13 JP JP16912584A patent/JPS61222986A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4874484A (enExample) * | 1972-01-12 | 1973-10-06 | ||
| JPS6356199A (ja) * | 1986-08-25 | 1988-03-10 | Omron Tateisi Electronics Co | パルスモ−タ制御装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0331677B2 (enExample) | 1991-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4855013A (en) | Method for controlling the thickness of a thin crystal film | |
| SE432032B (sv) | Sett att odla en epitaxiell film med forutbestemd kemisk sammansettning med anvendning av molekylarstrale-epitaxi | |
| EP0233610A2 (en) | Method and apparatus for vapor deposition | |
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| JPH03115190A (ja) | 混晶組成比決定法 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |