JPS61219026A - Formation of liquid crystal orienting film - Google Patents
Formation of liquid crystal orienting filmInfo
- Publication number
- JPS61219026A JPS61219026A JP5948385A JP5948385A JPS61219026A JP S61219026 A JPS61219026 A JP S61219026A JP 5948385 A JP5948385 A JP 5948385A JP 5948385 A JP5948385 A JP 5948385A JP S61219026 A JPS61219026 A JP S61219026A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- synthetic resin
- glow discharge
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は液晶光示素子の電極基板上に積層される液晶配
向膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a liquid crystal alignment film laminated on an electrode substrate of a liquid crystal display device.
(従来の技術)
従来、この種液晶配向膜の形成方法として、例えばポリ
イミド等の電気絶縁性の耐熱性合成樹脂被膜の表面をラ
ビング処理する方法が知られているが、ラビング処理時
に該合成樹脂被膜が剥れたシ、また該合成樹脂被膜の表
面やこれを擦する布にダスト等が付着している場合には
該被膜表面に傷が付いたすし、更にまた大面積の合成樹
脂被膜上一様にラビング処理することが困難であるため
に大面積の液晶配向膜を形成できないという不都合を有
する。(Prior Art) Conventionally, as a method for forming this type of liquid crystal alignment film, a method is known in which the surface of an electrically insulating heat-resistant synthetic resin coating such as polyimide is subjected to a rubbing treatment. If the coating has peeled off, or if there is dust, etc. adhering to the surface of the synthetic resin coating or the cloth used to rub it, the surface of the coating may be scratched. Since it is difficult to perform a uniform rubbing treatment, there is a disadvantage that a large-area liquid crystal alignment film cannot be formed.
(発明が解決しようとする問題点)
本発明は前記従来の不都合を解消し、合成樹脂被膜を電
極基板から剥離させたシ被膜表面に傷を付けたシするこ
となく均一に配向処理が施され九人面権の液晶配向膜を
簡単に形成することができる液晶配向膜の形成方法を提
供することをその目的とする。(Problems to be Solved by the Invention) The present invention solves the above-mentioned conventional inconveniences, and allows uniform alignment treatment to be performed without damaging the surface of the synthetic resin coating after it is peeled off from the electrode substrate. It is an object of the present invention to provide a method for forming a liquid crystal alignment film that can easily form a nine-faced liquid crystal alignment film.
(問題点を解決するための手段)
本発明は前記の目的を達成すべく、電気絶縁性の耐熱性
合成樹脂被膜の表面をグロー放電中に晒すことから成る
。(Means for Solving the Problems) In order to achieve the above object, the present invention consists of exposing the surface of an electrically insulating heat-resistant synthetic resin coating to a glow discharge.
合成樹脂被膜の表面′をグロー放電中に晒すことによっ
て該合成、樹脂被膜が液晶配向性を示すこととなる理由
については、グロー放電中で生成したイオンや、電子等
が電場によって該合成樹脂被膜の表面に水平に近い角度
で入射し、これによりラビング処理と同じ効果が生じる
ためであると考えられる0従ってグロー放電処理嘔れる
合成樹脂被膜はその表面を電界方向に対して略水平か或
いは45度位までの角度に保持するのが好ましい〇
また、該合成樹脂被膜はグロー放電の特に陽極柱領域で
処理するのが好ましい。The reason why the synthetic resin coating exhibits liquid crystal orientation by exposing the surface of the synthetic resin coating to a glow discharge is that ions, electrons, etc. generated during the glow discharge cause the synthetic resin coating to be exposed to an electric field. This is thought to be due to the fact that the light is incident on the surface at an angle close to horizontal to the electric field direction, thereby producing the same effect as rubbing treatment. Therefore, the synthetic resin coating that undergoes glow discharge treatment has its surface approximately horizontal to the direction of the electric field, or It is preferable to maintain the angle at an angle of up to 100 degrees. Furthermore, it is preferable that the synthetic resin coating is treated in the glow discharge, particularly in the anode column region.
(実施例)
以下、添付図面に従って本発明の実施例に付き説明する
。(Examples) Examples of the present invention will be described below with reference to the accompanying drawings.
図面は本発明方法を実施するための装置の一例を示すも
ので、1は処理室を示し、該処理室1は外部の真空ポン
プその他の真空排気系2に接続されて内部の真空度t−
si*自在としであると共に該処理室1に連通されるガ
ス導入管3からアルゴン、窒素、醸素、水素、ヘリウム
、空気等の所望のガスを導入できるようにしである〇ま
た該処理室1内ににグルー放電用の電極4.4が平行に
対向起重されていると共に、これら電極4.4間には、
電極側表面に電気絶縁性の耐熱性合成樹脂被膜5′f!
:1FII層された電極基板6を支持するための支持部
材7が設けられている。The drawing shows an example of an apparatus for carrying out the method of the present invention, and 1 indicates a processing chamber, and the processing chamber 1 is connected to an external vacuum pump or other evacuation system 2 to maintain an internal vacuum level of t-.
The processing chamber 1 is designed so that desired gases such as argon, nitrogen, nitrogen, hydrogen, helium, air, etc. can be introduced from the gas introduction pipe 3 communicating with the processing chamber 1. Inside, electrodes 4.4 for glue discharge are stacked parallel to each other, and between these electrodes 4.4,
Electrically insulating heat-resistant synthetic resin coating 5'f on the electrode side surface!
A support member 7 is provided to support the electrode substrate 6 having one FII layer.
尚、図中8は電極4.4の電源、9はガス導入管3の流
量調整弁を示す。In the figure, reference numeral 8 indicates a power supply for the electrode 4.4, and reference numeral 9 indicates a flow rate adjustment valve of the gas introduction pipe 3.
ここで当該装置による液晶配向膜の製造の一例を示す。Here, an example of manufacturing a liquid crystal alignment film using the apparatus will be described.
まず、例えばポリイミドの原料モノマーを真空中で蒸着
する等の方法により電極側表面に電気絶縁性の耐熱性合
成樹脂被@5としてポリイミド被膜を積層されたたて、
よこ303Xl菌の電極基板6t−その合成樹脂被膜5
面が電極4.4間に略水平に、即ち電界方向に対して略
水平になるように支持部材7で支持する。First, a polyimide coating is laminated as an electrically insulating heat-resistant synthetic resin coating@5 on the electrode side surface by, for example, vapor-depositing a raw material monomer of polyimide in a vacuum.
Horizontal 303Xl bacteria electrode substrate 6t - its synthetic resin coating 5
It is supported by the support member 7 so that the surface is approximately horizontal between the electrodes 4 and 4, that is, approximately horizontal to the direction of the electric field.
次で処理室1内を真空排気糸2t−介して1 xl 0
1〜1 ×10−’ Torr程度に設定した後、該処
理室1内が0.01 ’L’orrとなるようにガス導
入管5を介してアルゴンガスを導入する。尚アルゴンガ
スの前記ガス圧はグロー放電の陽光柱の領域が前配電楊
基板6の支持されている部分に生じるように調節されて
いる。Next, the inside of the processing chamber 1 is 1 xl 0 through the vacuum evacuation thread 2t.
After setting the pressure to about 1 to 1×10 −' Torr, argon gas is introduced through the gas introduction pipe 5 so that the pressure inside the processing chamber 1 becomes 0.01 L'orr. The gas pressure of the argon gas is adjusted so that the positive column area of the glow discharge is generated in the supported portion of the front distribution plate 6.
その後、電極4.4に一2KVの直流電圧上印加してグ
ロー放電を発生させ、前記合成樹脂被膜50表面をその
陽光柱領域に5分間晒す。Thereafter, a DC voltage of -2 KV is applied to the electrode 4.4 to generate a glow discharge, and the surface of the synthetic resin coating 50 is exposed to the positive column region for 5 minutes.
かくして、剥離や傷の全くない非常に均一な大面積の液
晶配向膜が得られ九〇
使用ガスとしてアルゴンに代えて窒素、瞭素、水素、ヘ
リウム、空気等を用いても前記実施例と同様に優れた液
晶配向膜が得られ九。In this way, a very uniform, large-area liquid crystal alignment film with no peeling or scratches can be obtained.90 Even if nitrogen, chlorine, hydrogen, helium, air, etc. are used instead of argon as the gas, the same results as in the previous example can be obtained. 9. An excellent liquid crystal alignment film can be obtained.
また、グロー放電のダーク部以外の領域であれば陽光柱
領域に限らず液晶配向膜を形成できた。Furthermore, the liquid crystal alignment film could be formed in any region other than the dark part of the glow discharge, not only in the positive column region.
(発明の効果)
このよりに、本発明によるときは、電気絶縁性の耐熱性
合成樹脂被膜の表面をグロー放電中に晒すようにしたの
で電極基板からの剥離がなく、また被膜表面に傷のない
極めて均一なしかも大面積の液晶配向膜を簡単に形成す
ることができる効果を有する。(Effects of the Invention) According to the present invention, since the surface of the electrically insulating heat-resistant synthetic resin coating is exposed during glow discharge, there is no peeling from the electrode substrate, and there is no scratch on the coating surface. It has the effect of easily forming an extremely uniform and large-area liquid crystal alignment film.
図面は本発明液晶配向膜の形成方法を実施するための装
置の一例の一部を截除した正面図である。
1・・・・・・処 理 室 2・・・・・・真空排気
系3・・・・・・ガス導入管 4.4・・・・・・電
極5・・・・・・電気絶縁性の耐熱性合成樹脂被膜
特許出願人 日本真空技術株式会社
外2名The drawing is a partially cut-away front view of an example of an apparatus for carrying out the method for forming a liquid crystal alignment film of the present invention. 1...Processing chamber 2...Evacuation system 3...Gas introduction pipe 4.4...Electrode 5...Electrical insulation Patent applicant for heat-resistant synthetic resin coating: 2 people other than Japan Vacuum Technology Co., Ltd.
Claims (1)
に晒すことから成る液晶配向膜の形成方法。A method for forming a liquid crystal alignment film comprising exposing the surface of an electrically insulating heat-resistant synthetic resin film to glow discharge.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5948385A JPS61219026A (en) | 1985-03-26 | 1985-03-26 | Formation of liquid crystal orienting film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5948385A JPS61219026A (en) | 1985-03-26 | 1985-03-26 | Formation of liquid crystal orienting film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61219026A true JPS61219026A (en) | 1986-09-29 |
Family
ID=13114594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5948385A Pending JPS61219026A (en) | 1985-03-26 | 1985-03-26 | Formation of liquid crystal orienting film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61219026A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0376333A2 (en) * | 1988-12-29 | 1990-07-04 | Sharp Kabushiki Kaisha | Method for manufacturing polyimide thin film and apparatus |
JPH0959404A (en) * | 1995-08-28 | 1997-03-04 | Internatl Business Mach Corp <Ibm> | Modifying method for photosensitive chemical substance film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110648A (en) * | 1974-02-08 | 1975-08-30 | ||
JPS52123644A (en) * | 1976-04-09 | 1977-10-18 | Toppan Printing Co Ltd | Method of forming oriented deposited film |
JPS5885417A (en) * | 1981-11-04 | 1983-05-21 | ヒューズ・エアクラフト・カンパニー | Manufacture of conductive substrate for parallel array of liquid crystal material |
JPS6059485A (en) * | 1983-09-12 | 1985-04-05 | Oki Electric Ind Co Ltd | Recognizing system of handwritten character |
-
1985
- 1985-03-26 JP JP5948385A patent/JPS61219026A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110648A (en) * | 1974-02-08 | 1975-08-30 | ||
JPS52123644A (en) * | 1976-04-09 | 1977-10-18 | Toppan Printing Co Ltd | Method of forming oriented deposited film |
JPS5885417A (en) * | 1981-11-04 | 1983-05-21 | ヒューズ・エアクラフト・カンパニー | Manufacture of conductive substrate for parallel array of liquid crystal material |
JPS6059485A (en) * | 1983-09-12 | 1985-04-05 | Oki Electric Ind Co Ltd | Recognizing system of handwritten character |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0376333A2 (en) * | 1988-12-29 | 1990-07-04 | Sharp Kabushiki Kaisha | Method for manufacturing polyimide thin film and apparatus |
JPH0959404A (en) * | 1995-08-28 | 1997-03-04 | Internatl Business Mach Corp <Ibm> | Modifying method for photosensitive chemical substance film |
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