JPS61267027A - Formation of liquid crystal oriented film - Google Patents

Formation of liquid crystal oriented film

Info

Publication number
JPS61267027A
JPS61267027A JP10701785A JP10701785A JPS61267027A JP S61267027 A JPS61267027 A JP S61267027A JP 10701785 A JP10701785 A JP 10701785A JP 10701785 A JP10701785 A JP 10701785A JP S61267027 A JPS61267027 A JP S61267027A
Authority
JP
Japan
Prior art keywords
film
liquid crystal
dielectric material
zro2
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10701785A
Other languages
Japanese (ja)
Inventor
Yoshikazu Takahashi
善和 高橋
Masayuki Iijima
正行 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP10701785A priority Critical patent/JPS61267027A/en
Publication of JPS61267027A publication Critical patent/JPS61267027A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate entirely the possibility of the discoloration and damage of a liquid crystal oriented film and to reduce the time for treatment by using the dielectric itself as a target and irradiating an ion beam thereon to sputter so that the liquid crystal oriented film exhibiting uniform orientation is obtd. CONSTITUTION:A ZrO2 plate sized 30cmX5cm vertically and horizontally is supported as a dielectric material 3 of a target by a supporting member 5 and an electrode substrate 7 which is laminated with a film 6 consisting of a polyamic film, i.e., the precursor of polyimide, on the electrode side surface and is sized 30cmX30cm vertically and horizontally is supported by a supporting member 8. The inside of a treatment chamber 1 is then set at 1X10<-4>Torr via a vacuum evacuation system 2 and Ar<+> is irradiated on the dielectric material 3 by an ion gun 4 to irradiate the particles of the sputtered material 3 for 10 seconds onto the surface of the film 6 so that the island-shaped discontinuous films consisting of ZrO2 are formed on the surface thereof. More specifically, the film 6 is exposed between the island-shaped ZrO2 films. The substrate 7 is finally taken out of the chamber 1 and is housed into a heating chamber, where the polyamic acid laminated on the substrate 7 is heated and is polymerized to polyimide.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は液晶表示素子の電極基板上に積層される液晶配
向膜の形成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a liquid crystal alignment film laminated on an electrode substrate of a liquid crystal display element.

(従来の技術) 従来、この種液晶配向膜の形成方法として、例えばポリ
イミド等の電気絶縁性の耐熱性合成樹脂被膜の表面をラ
ビング処理する方法が知られているが、ラビング処理時
に該合成樹脂被膜が剥れたり、また該合成樹脂被膜の表
面やこれを擦する布にダスト等が付着している場合には
該被膜表面に傷が付いたりし、更にまた大面積の合成樹
脂被膜を一様にラビング処理することが困難であるため
に大面積の液晶配向膜を形成できないという不都合を有
する。
(Prior Art) Conventionally, as a method for forming this type of liquid crystal alignment film, a method is known in which the surface of an electrically insulating heat-resistant synthetic resin coating such as polyimide is subjected to a rubbing treatment. The coating may peel off, or if dust or the like is attached to the surface of the synthetic resin coating or the cloth used to rub it, the surface of the coating may be scratched. However, since it is difficult to perform a rubbing treatment, it is difficult to form a large-area liquid crystal alignment film.

(発明が解決しようとする問題点) ml記不都合を解消するものとして、本願の出願人によ
って同時提出の特許願(1)によって電気絶縁性の耐熱
性合成樹脂被膜の表面に誘電体の島状不連続被膜を斜め
入射スパッタリングによって形成することから成る液晶
配向膜の形成方法を提案したが、より均一な配向性を示
す、しかも劣化の少ない液晶配向膜を短時間で形成でき
る液晶配向膜の形成方法の提案が望まれる。
(Problems to be Solved by the Invention) In order to solve the inconvenience described in ml, the patent application (1) filed at the same time by the applicant of the present application provides an island-like dielectric material on the surface of an electrically insulating heat-resistant synthetic resin coating. We proposed a method for forming a liquid crystal alignment film that consists of forming a discontinuous film by oblique incidence sputtering, but it is difficult to form a liquid crystal alignment film that shows more uniform alignment and can form a liquid crystal alignment film with less deterioration in a short time. Proposals on methods are desired.

(問題点を解決するための手段) 本発明は、前記要望に応える液晶配向膜の形成方法を提
供することを目的とするもので、その発明は電気絶縁性
の耐熱性合成樹脂被膜の表面に誘電体の島状不連続被膜
を斜め入射スバツタリングによって形成することから成
る液晶配向膜の形成方法において、該誘電体自体をター
ゲットとして用いると共に、これにイオンビームを照射
してスパッタすることを特徴とする。
(Means for Solving the Problems) The present invention aims to provide a method for forming a liquid crystal alignment film that meets the above-mentioned needs. A method for forming a liquid crystal alignment film comprising forming an island-shaped discontinuous film of a dielectric material by oblique incidence sputtering, characterized in that the dielectric material itself is used as a target and sputtering is performed by irradiating it with an ion beam. do.

誘電体の島状不連続被膜を形成する電気絶縁性の耐熱性
合成樹脂被膜としては、ポリイミド、ポリアミド、ポリ
尿素等が挙げられるが、ポリイミドが極めて優れた高電
気絶縁性、耐熱性並びに電気化学的安定性を有するので
好ましい。
Examples of the electrically insulating heat-resistant synthetic resin film that forms the dielectric island-like discontinuous film include polyimide, polyamide, polyurea, etc. Polyimide has extremely excellent high electrical insulation, heat resistance, and electrochemical properties. It is preferable because it has physical stability.

島状不連続被膜に形成する誘電体としてはl「02、T
ie□、Cr2O,、CuO、Aj!20.、Sin、
、等が挙げられ、本発明はかかる誘電体自体をターゲッ
トとして、これにイオン銃によってAr”等のイオンビ
ームを照射して該被膜上にスパッタリングする。
The dielectric material formed on the island-like discontinuous film is l'02, T.
ie□, Cr2O,, CuO, Aj! 20. , Sin,
, etc., and the present invention uses the dielectric itself as a target and irradiates it with an ion beam of Ar'' or the like using an ion gun to sputter onto the film.

また、該島状不連続被膜は、ポリイミド等の電気絶縁性
の耐熱性合成樹脂被膜上に直接スパッタリングして形成
しても、またポリイミドの前駆体であるポリアミック酸
等の電気絶縁性の耐熱性合成樹脂の前駆体被膜上にスパ
ッタリングして形成してから該前駆体の重合を完結せし
めることによって、得られた耐熱性合成樹脂被股上に形
成されているようにしてもよい。
The island-shaped discontinuous film can be formed by direct sputtering on an electrically insulating heat-resistant synthetic resin film such as polyimide, or it can be formed on an electrically insulating heat-resistant synthetic resin film such as polyamic acid, which is a precursor of polyimide. It may be formed by sputtering on a synthetic resin precursor coating and then completing the polymerization of the precursor, thereby forming it on the resulting heat-resistant synthetic resin coating.

電気絶縁性の耐熱性合成樹脂或いはその前駆体の被膜面
は、スパッタされた粒子が該被膜面に対して略水平乃至
45°の角度で斜め入射するように、ターゲットに対し
て位置決めするのが好ましい。
The coating surface of the electrically insulating heat-resistant synthetic resin or its precursor is positioned relative to the target so that the sputtered particles are obliquely incident on the coating surface at an angle of approximately horizontal to 45°. preferable.

スパッタリングは一般に真空度1×104〜1×10“
’ Torr程度の条件下でイオン銃を用いて5〜30
秒程度行なう。
Sputtering is generally performed at a vacuum level of 1 x 104 to 1 x 10"
'5 to 30 minutes using an ion gun under conditions of around Torr.
Do this for about seconds.

(実施例) 以下、添附図面に従って本発明の実施例に付説明する。(Example) Embodiments of the present invention will be described below with reference to the accompanying drawings.

図面は本発明方法を実施するための装置の一例を示すも
ので、1は処理室を示し、該処理室1は外部の真空ポン
プその他の真空排気系2に接続されて内部の真空度を調
節自在としである。
The drawing shows an example of an apparatus for carrying out the method of the present invention, and 1 indicates a processing chamber, and the processing chamber 1 is connected to an external vacuum pump or other evacuation system 2 to adjust the internal vacuum degree. It is free.

また、該処理室1内には、ターゲットとしてZrO2等
の板状の誘電体3を、その表面をカウフマン型(電子衝
撃型)等のイオン銃4で照射されるイオンビームが約4
5°の入射角度で入射するように該イオン銃4に対向さ
せて支持部材5で支持すると共に、電気絶縁性の耐熱性
合成樹脂或いはその前駆体の被膜6を電極側表面に積層
された電極基板7をその被膜6面にスパッタされた誘電
体3の粒子が10°以下の入射角度で入射するように支
持部材8で支持するようにしである。尚、誘電体3と被
膜6間の距離は約100Mに設定しである。
In addition, in the processing chamber 1, an ion beam irradiating a plate-shaped dielectric material 3 such as ZrO2 as a target with an ion gun 4 such as a Kaufman type (electron impact type) is applied to the surface thereof.
An electrode is supported by a support member 5 so as to face the ion gun 4 so that the ion gun 4 is incident at an incident angle of 5°, and a coating 6 of an electrically insulating heat-resistant synthetic resin or its precursor is laminated on the electrode side surface. The substrate 7 is supported by a support member 8 so that the particles of the dielectric 3 sputtered onto the surface of the coating 6 are incident at an incident angle of 10° or less. Note that the distance between the dielectric 3 and the coating 6 is set to about 100M.

ここで、当該装置による液晶配向膜の製造例を実施例1
及び2として示す。
Here, an example of manufacturing a liquid crystal alignment film using the apparatus is described in Example 1.
and 2.

実施例1 まず、ターゲットの誘電体3として、たて、よこ30C
IR×scmのl「0□板を支持部材5で支持すると共
に、刷毛塗り法、浸漬法、スピンコード法、スプレー法
、真空蒸着法等の適宜の方法によって電極側表面にポリ
イミドの前駆体であるポリアミック酸の被膜6を積層さ
れた、たて、よこ30cmX 30Cmの電極基板7を
支持部材8で支持した。
Example 1 First, the dielectric material 3 of the target is 30C vertically and horizontally.
The IR×scm l'0□ plate is supported by the support member 5, and a polyimide precursor is coated on the electrode side surface by an appropriate method such as brush coating, dipping, spin-coding, spraying, or vacuum evaporation. An electrode substrate 7 measuring 30 cm x 30 cm in length and width, on which a coating 6 of a certain polyamic acid was laminated, was supported by a support member 8 .

次に、処理室1内を真空排気系2を介して1×10″’
 Torrに設定した。
Next, the inside of the processing chamber 1 is pumped through the vacuum evacuation system 2 to a
It was set to Torr.

次で、イオン銃4で^r+を該誘電体3に照射し、スパ
ッタされた誘電体3の粒子を該被膜6面に10秒間照射
させてその表面にZrO2の島状不連続被膜を形成した
。即ち、ボリアミックス酸の被膜6をz「02の島状被
膜間に露出させるようにした。
Next, the dielectric material 3 was irradiated with ^r+ using the ion gun 4, and the particles of the sputtered dielectric material 3 were irradiated onto the surface of the film 6 for 10 seconds to form an island-like discontinuous film of ZrO2 on the surface. . That is, the boriamic acid coating 6 was exposed between the island-like coatings of z'02.

最後に電極基板7を処理室1から取り出して図示しない
加熱室に収容し、該基板7上に積層されたポリアミック
酸を200〜40G’Cに加熱してポリイミドに重合し
た。
Finally, the electrode substrate 7 was taken out from the processing chamber 1 and placed in a heating chamber (not shown), and the polyamic acid laminated on the substrate 7 was heated to 200 to 40 G'C to polymerize into polyimide.

かくして、剥離や傷や変色が全くなく、しかも非常に均
一な配向性を示す大面積の液晶配向膜が短時間で得られ
た。
In this way, a large-area liquid crystal alignment film with no peeling, scratches, or discoloration and exhibiting extremely uniform alignment was obtained in a short time.

実施例2 ポリアミック酸の被膜6に代えてポリイミドの被膜6を
積層された電極基板7を用い、従って最後の加熱重合処
理を行なわないこと以外は前記実施例1と同様の処理を
行なって液晶配向膜を得た。
Example 2 The same process as in Example 1 was performed except that an electrode substrate 7 on which a polyimide film 6 was laminated in place of the polyamic acid film 6 was used, and the final heating polymerization process was not performed. A membrane was obtained.

やはり、前記実施例1と同様に、剥離や傷や変色が全く
なく、しかも非常に均一な配向性を示す大面積の液晶配
向膜が短時間で得られた。
Again, as in Example 1, a large-area liquid crystal alignment film with no peeling, scratches, or discoloration and exhibiting extremely uniform alignment was obtained in a short time.

尚、前記実施例1及び2において、ターゲットの誘電体
3としてZrO2に代えてTiO2、Cr2O,、Cu
O1AJ!203.5i02を用いても同様に優れた液
晶配向膜が短時間で得られた。
In Examples 1 and 2, TiO2, Cr2O, Cu was used instead of ZrO2 as the dielectric material 3 of the target.
O1AJ! Even when 203.5i02 was used, a similarly excellent liquid crystal alignment film was obtained in a short time.

(発明の効果) このように、本発明によるときは、電気絶縁性の耐熱性
合成樹脂被膜の表面に誘電体の島状不連続被膜を斜め入
射スパッタリングによって形成するために、剥離や傷の
全くない非常に均一な配向性を示す大面積の液晶配向膜
を簡単に形成することができることは元より、誘電体自
体をターゲットとして用いると共にこれにイオンビーム
を照射してスパッタするようにしたために、処理中の圧
力が小さく、且つスパッタされた粒子のひろがり角が小
さいので更に均一な配向性を示す液晶配向膜が得られ、
しかもプラズマにさらされないので該配向膜の変色や損
傷の虞れが全くな(、シかもイオンビームの照射による
スパッタリングであるために処理時間が極めて短時間で
済むという効果を有する。
(Effects of the Invention) As described above, according to the present invention, since a dielectric island-shaped discontinuous film is formed on the surface of an electrically insulating heat-resistant synthetic resin film by oblique incidence sputtering, there is no possibility of peeling or scratches. In addition to being able to easily form a large-area liquid crystal alignment film that exhibits extremely uniform alignment, it also uses the dielectric itself as a target and sputters it by irradiating it with an ion beam. Since the pressure during processing is low and the spreading angle of sputtered particles is small, a liquid crystal alignment film exhibiting more uniform alignment can be obtained,
Furthermore, since it is not exposed to plasma, there is no risk of discoloration or damage to the alignment film (and since sputtering is performed by ion beam irradiation, the processing time is extremely short).

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の液晶配向膜の形成方法を実施するための
装置の一例の一部を截断した正面図である。 1・・・処理室 2・・・真空排気系 3・・・誘電体 4・・・イオン銃 5.8・・・支持部材 6・・・電気絶縁性の耐熱性合成樹脂 或いはその前駆体の被膜 7・・・電極基板
The drawing is a partially cutaway front view of an example of an apparatus for carrying out the method for forming a liquid crystal alignment film of the present invention. 1... Processing chamber 2... Vacuum exhaust system 3... Dielectric material 4... Ion gun 5.8... Support member 6... Electrically insulating heat-resistant synthetic resin or its precursor Coating 7...electrode substrate

Claims (1)

【特許請求の範囲】[Claims] 電気絶縁性の耐熱性合成樹脂被膜の表面に誘電体の島状
不連続被膜を斜め入射スパッタリングによつて形成する
ことから成る液晶配向膜の形成方法において、誘電体自
体をターゲットとし用いると共に、これにイオンビーム
を照射してスパッタすることを特徴とする液晶配向膜の
形成方法。
In a method for forming a liquid crystal alignment film, which comprises forming an island-like discontinuous film of a dielectric material on the surface of an electrically insulating heat-resistant synthetic resin film by oblique incidence sputtering, the dielectric material itself is used as a target, and the dielectric material itself is used as a target. 1. A method for forming a liquid crystal alignment film, which comprises sputtering by irradiating an ion beam onto a liquid crystal alignment film.
JP10701785A 1985-05-21 1985-05-21 Formation of liquid crystal oriented film Pending JPS61267027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10701785A JPS61267027A (en) 1985-05-21 1985-05-21 Formation of liquid crystal oriented film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10701785A JPS61267027A (en) 1985-05-21 1985-05-21 Formation of liquid crystal oriented film

Publications (1)

Publication Number Publication Date
JPS61267027A true JPS61267027A (en) 1986-11-26

Family

ID=14448397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10701785A Pending JPS61267027A (en) 1985-05-21 1985-05-21 Formation of liquid crystal oriented film

Country Status (1)

Country Link
JP (1) JPS61267027A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4436285C2 (en) * 1994-10-11 2002-01-10 Univ Stuttgart Method and device for applying orientation layers on a substrate for aligning liquid crystal molecules
EP1693701A1 (en) * 2005-02-18 2006-08-23 Seiko Epson Corporation Method of forming inorganic orientation film, inorganic orientation film, substrate for electronic devices, liquid crystal panel, and electronic equipment
JP2008019498A (en) * 2006-07-14 2008-01-31 Seiko Epson Corp Film deposition method and film deposition system
US7456920B2 (en) 2004-10-22 2008-11-25 Seiko Epson Corporation Method of manufacturing electro-optical device, device for manufacturing the same, electro-optical device and electronic apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312346A (en) * 1976-07-20 1978-02-03 Asahi Glass Co Ltd Method of surface treating electrode plate for liquid crystal display unit
JPS57157214A (en) * 1981-03-24 1982-09-28 Nippon Denso Co Ltd Production method and device for liquid crystal display substrate
JPS5835513A (en) * 1981-08-27 1983-03-02 Sanyo Electric Co Ltd Liquid crystal display device
JPS60107016A (en) * 1983-11-15 1985-06-12 Anritsu Corp Device for obtaining parallel scanning luminous flux from incident luminous flux

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312346A (en) * 1976-07-20 1978-02-03 Asahi Glass Co Ltd Method of surface treating electrode plate for liquid crystal display unit
JPS57157214A (en) * 1981-03-24 1982-09-28 Nippon Denso Co Ltd Production method and device for liquid crystal display substrate
JPS5835513A (en) * 1981-08-27 1983-03-02 Sanyo Electric Co Ltd Liquid crystal display device
JPS60107016A (en) * 1983-11-15 1985-06-12 Anritsu Corp Device for obtaining parallel scanning luminous flux from incident luminous flux

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4436285C2 (en) * 1994-10-11 2002-01-10 Univ Stuttgart Method and device for applying orientation layers on a substrate for aligning liquid crystal molecules
US7456920B2 (en) 2004-10-22 2008-11-25 Seiko Epson Corporation Method of manufacturing electro-optical device, device for manufacturing the same, electro-optical device and electronic apparatus
EP1693701A1 (en) * 2005-02-18 2006-08-23 Seiko Epson Corporation Method of forming inorganic orientation film, inorganic orientation film, substrate for electronic devices, liquid crystal panel, and electronic equipment
JP2008019498A (en) * 2006-07-14 2008-01-31 Seiko Epson Corp Film deposition method and film deposition system

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