JPS61212739A - 半導体圧力センサ - Google Patents
半導体圧力センサInfo
- Publication number
- JPS61212739A JPS61212739A JP5364285A JP5364285A JPS61212739A JP S61212739 A JPS61212739 A JP S61212739A JP 5364285 A JP5364285 A JP 5364285A JP 5364285 A JP5364285 A JP 5364285A JP S61212739 A JPS61212739 A JP S61212739A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- gauge
- semiconductor
- shear
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5364285A JPS61212739A (ja) | 1985-03-18 | 1985-03-18 | 半導体圧力センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5364285A JPS61212739A (ja) | 1985-03-18 | 1985-03-18 | 半導体圧力センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61212739A true JPS61212739A (ja) | 1986-09-20 |
| JPH0448179B2 JPH0448179B2 (enExample) | 1992-08-06 |
Family
ID=12948552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5364285A Granted JPS61212739A (ja) | 1985-03-18 | 1985-03-18 | 半導体圧力センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61212739A (enExample) |
-
1985
- 1985-03-18 JP JP5364285A patent/JPS61212739A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448179B2 (enExample) | 1992-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5178016A (en) | Silicon pressure sensor chip with a shear element on a sculptured diaphragm | |
| US5289721A (en) | Semiconductor pressure sensor | |
| US4320664A (en) | Thermally compensated silicon pressure sensor | |
| JPS59136977A (ja) | 圧力感知半導体装置とその製造法 | |
| JPH0239574A (ja) | 半導体圧力センサ | |
| JPS61212739A (ja) | 半導体圧力センサ | |
| JPS6376483A (ja) | 半導体加速度センサの製造方法 | |
| US4884051A (en) | Semiconductor diffusion type force sensing apparatus | |
| JPS6313357B2 (enExample) | ||
| JPH04328434A (ja) | 複合センサ | |
| US11499882B2 (en) | Pressure sensor | |
| JP2696894B2 (ja) | 半導体圧力センサ | |
| JPH01236659A (ja) | 半導体圧力センサ | |
| JP2864700B2 (ja) | 半導体圧力センサ及びその製造方法 | |
| JPH041472Y2 (enExample) | ||
| JP2905902B2 (ja) | 半導体圧力計およびその製造方法 | |
| JPS5913377A (ja) | 半導体圧力変換素子の受圧ダイヤフラム形成方法 | |
| JPH0337534A (ja) | 半導体歪検出装置 | |
| JPH0510830B2 (enExample) | ||
| JPS6254477A (ja) | 半導体圧力センサの製造方法 | |
| JPS633468A (ja) | 半導体圧力センサ | |
| CN114608730B (zh) | 一种硅圆膜压阻传感器、及其实现方法 | |
| JPS5938744B2 (ja) | 圧力−電気変換装置およびその製造方法 | |
| JPH1038726A (ja) | 半導体圧力差圧検出器 | |
| JPH02254764A (ja) | シリコン圧力センサ |