JPS61209983A - 半導体単結晶の製造方法及び装置 - Google Patents
半導体単結晶の製造方法及び装置Info
- Publication number
- JPS61209983A JPS61209983A JP5146785A JP5146785A JPS61209983A JP S61209983 A JPS61209983 A JP S61209983A JP 5146785 A JP5146785 A JP 5146785A JP 5146785 A JP5146785 A JP 5146785A JP S61209983 A JPS61209983 A JP S61209983A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- heater
- liquid interface
- boat
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000007788 liquid Substances 0.000 claims description 58
- 239000010453 quartz Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- UFHLMYOGRXOCSL-UHFFFAOYSA-N isoprothiolane Chemical compound CC(C)OC(=O)C(C(=O)OC(C)C)=C1SCCS1 UFHLMYOGRXOCSL-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5146785A JPS61209983A (ja) | 1985-03-13 | 1985-03-13 | 半導体単結晶の製造方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5146785A JPS61209983A (ja) | 1985-03-13 | 1985-03-13 | 半導体単結晶の製造方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61209983A true JPS61209983A (ja) | 1986-09-18 |
| JPH0572356B2 JPH0572356B2 (enrdf_load_stackoverflow) | 1993-10-12 |
Family
ID=12887739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5146785A Granted JPS61209983A (ja) | 1985-03-13 | 1985-03-13 | 半導体単結晶の製造方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61209983A (enrdf_load_stackoverflow) |
-
1985
- 1985-03-13 JP JP5146785A patent/JPS61209983A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572356B2 (enrdf_load_stackoverflow) | 1993-10-12 |
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