JPS6120389A - Laser module - Google Patents
Laser moduleInfo
- Publication number
- JPS6120389A JPS6120389A JP14195084A JP14195084A JPS6120389A JP S6120389 A JPS6120389 A JP S6120389A JP 14195084 A JP14195084 A JP 14195084A JP 14195084 A JP14195084 A JP 14195084A JP S6120389 A JPS6120389 A JP S6120389A
- Authority
- JP
- Japan
- Prior art keywords
- pitch
- distance
- semiconductor laser
- magnifications
- magnification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体レーザの光を集束性ロッドレンズで集
光して光ファイバに入射させるレーザモジュールに関す
るものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF THE INVENTION The present invention relates to a laser module that focuses light from a semiconductor laser using a focusing rod lens and inputs the light into an optical fiber.
従来例の構成とその問題点
第1図は従来の025ピッチのセルフォックマイクロレ
ンズを用いたレーザモジュールを示している。第1図に
おいて1は半導体レーザLD、2はセルフォックマイク
ロレンズSML、3tl、ファイバである。また11は
LDIとSML2間の距離、12はSML2の出射端面
から集光点までの距離である。l!lをl、Qiiに設
定すると1!2は45朋となシ、倍率は21倍となり、
11を0.5朋に設定すると!!2は9. Q mmと
なり倍率は42倍となる。1. Structure of a conventional example and its problems FIG. 1 shows a laser module using a conventional 025 pitch SELFOC microlens. In FIG. 1, 1 is a semiconductor laser LD, 2 is a SELFOC microlens SML, 3TL, and a fiber. Further, 11 is the distance between the LDI and the SML 2, and 12 is the distance from the output end face of the SML 2 to the condensing point. l! If l is set to l, Qii, 1!2 becomes 45 friends and the magnification becomes 21 times,
If you set 11 to 0.5 ho! ! 2 is 9. Q mm, and the magnification is 42 times.
LDIと光フアイバ3間の結合効率を高くとる″ために
は、GIファイバの場合には3倍から10倍、シングル
モードファイバの場合には4倍から7倍の倍率が必要で
ある。In order to obtain a high coupling efficiency between the LDI and the optical fiber 3, a magnification of 3 to 10 times is required in the case of a GI fiber, and 4 times to 7 times in the case of a single mode fiber.
0.25ピッチのSML2を用いた従来のレーザモジュ
ールでは3倍以上の高倍率を得るためには11を0.7
u以下に設定しなくてはならないが、L D 1からL
D保護用キャップのガラス面までの距離が07朋である
ために、l!1をQ、7 mar以下に設定することが
できず、LDIと光フアイバ3間の結合効率を高くとる
ことができないという問題点があった。In a conventional laser module using 0.25 pitch SML2, 11 must be 0.7 to obtain a high magnification of 3 times or more.
It must be set below u, but from L D 1 to L
D Because the distance to the glass surface of the protective cap is 07mm, l! 1 cannot be set to Q, 7 mar or less, and the coupling efficiency between the LDI and the optical fiber 3 cannot be made high.
発明の目的
本発明は、上記従来例の問題点を除去するものであり、
elを1.Qii以上に設定した場合においても、3倍
以上の倍率を得て、結合系の結合効率を最大にすること
を目的とするものである。Purpose of the Invention The present invention eliminates the problems of the above-mentioned conventional example,
Set el to 1. The purpose is to obtain a magnification of 3 times or more even when set to Qii or more, and to maximize the coupling efficiency of the coupling system.
発明の構成
本発明は、上記目的を達成するために、0.23ピッチ
よりも短いピッチの集束性ロッドレンズを用いることに
よって、/1をl、 Q 1111以上に設定した場合
においても3倍以上の倍率を得ることができるようにす
るもので、/1をQ、 7 amよりも短くとれない保
護用キャップ付LDと光ファイバとの結合においても最
適な倍率に設定することが可能になり、最大の結合効率
を実現する効果を得るものである。Structure of the Invention In order to achieve the above object, the present invention uses a converging rod lens with a pitch shorter than 0.23 pitch, so that even when /1 is set to l, Q 1111 or more, the This makes it possible to obtain a magnification of This provides the effect of achieving maximum coupling efficiency.
実施例の説明
以下に本発明の一実施例について、図面とともニ説明す
る。第2図において4は半導体レーザLD、 5はピ
ッチ0.19のセルフォックマイクロレンズSML、6
は光ファイバである。LD4を出た光はSML5によっ
て集光され光ファイバ6へと結合される。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In Fig. 2, 4 is a semiconductor laser LD, 5 is a SELFOC microlens SML with a pitch of 0.19, and 6
is an optical fiber. The light exiting the LD 4 is collected by the SML 5 and coupled to the optical fiber 6 .
S M L 5のピッチをパラメータにしたl!1 と
倍率の関係は第3図のようになる。025ピッチの場合
に比べて0.19ピッチの場合は!+が大きくても高い
倍率が得られる。LD4と光ファイバ6の結合効率理論
曲線を第4図および第5図に示す。l with the pitch of S M L 5 as a parameter! The relationship between 1 and magnification is shown in Figure 3. In the case of 0.19 pitch compared to the case of 025 pitch! Even if + is large, a high magnification can be obtained. Theoretical coupling efficiency curves between the LD 4 and the optical fiber 6 are shown in FIGS. 4 and 5.
結合効率を最大にするためにはLD4、光ファイバ6の
種類に応じて最適な倍率に結合系を設定する必要がある
。SML5のピッチを019にすることにより最適な倍
率をl】が10朋以上の設定において得ることができる
。保護キャップ付のしD4では、LD4からキャップガ
ラス面までの距離が0.711mあるために、/1をQ
、 7 y以上にしなくてはならないっ従来の025ピ
ッチのSMLでは/Iを0,7朋に設定したとしても倍
率は3倍にしかならなかったが、SML5を0.19ピ
ッチにすることにより11 を大きくと9だ場合にも広
範囲の高倍率が得られることになp、LD4.光フアイ
バ60種類に応じた最適な倍率に設定することにより最
大の結合効率が得られるという利点がある0
発明の効果
本発明は上記のように半導体レーザとSMLとの間の距
離e1を】0朋以上に設定しても、広範囲に渡る高倍率
が得られるので、l!lをQ、 7 io+以下にはと
ることができない保護用キャップ付LDに対しても最適
な倍率設定が行え、LD−光フアイバ間の結合効率を最
大にすることができる利点を有する。In order to maximize the coupling efficiency, it is necessary to set the coupling system to an optimal magnification depending on the type of LD 4 and optical fiber 6. By setting the pitch of SML5 to 019, the optimum magnification can be obtained when l] is set to 10 or more. For D4 with a protective cap, the distance from LD4 to the cap glass surface is 0.711m, so /1 is changed to Q.
, it has to be 7 y or more. In the conventional 025 pitch SML, even if /I was set to 0.7 y, the magnification was only 3 times, but by setting SML5 to 0.19 pitch, If LD4.11 is increased, a wide range of high magnification can be obtained even in the case of LD4.9. There is an advantage that the maximum coupling efficiency can be obtained by setting the optimum magnification according to the 60 types of optical fibers.Advantageous Effects of the Invention As described above, the present invention has the advantage that the distance e1 between the semiconductor laser and the SML is Even if you set it higher than me, you can still get high magnification over a wide range, so l! It is possible to set the optimum magnification even for an LD with a protective cap, in which l cannot be lower than Q, 7 io+, and has the advantage that the coupling efficiency between the LD and the optical fiber can be maximized.
第1図は従来のレーザモジュールの概略図、第2図は本
発明の一実施例におけるレーザモジュールの概略図、第
3図は同レーザモジュールの距離l!I と倍率との関
係を示す図、第4図はレーザモジー−ルの半導体レーザ
のPPP半値半幅をパラメータとした結合系倍率m対結
合効率η特性図、第5図は、レーザモジュールの半導体
レーザ17)F’FP半値半幅をパラメータとした結合
系倍率m対結合効率η特性図である。
4・・・・・・半4体v−ザ、5・・・・・・セルフォ
ックマイクロレンズ、6・・・・・・光ファイバ。
代理人の氏名 弁理士 中尾敏男 eなか1名菓 1
図
?
第2図
第3図
(aslFig. 1 is a schematic diagram of a conventional laser module, Fig. 2 is a schematic diagram of a laser module according to an embodiment of the present invention, and Fig. 3 is a schematic diagram of a laser module according to an embodiment of the present invention. A diagram showing the relationship between I and magnification, FIG. 4 is a characteristic diagram of the coupling system magnification m versus coupling efficiency η using the PPP half-width at half maximum of the semiconductor laser of the laser module as a parameter, and FIG. 5 shows the relationship between the semiconductor laser 17 of the laser module ) is a characteristic diagram of coupling system magnification m versus coupling efficiency η with F'FP half width at half maximum as a parameter. 4...Half-four body v-the, 5...Selfoc micro lens, 6...Optical fiber. Name of agent: Patent attorney Toshio Nakao eNaka 1 Meika 1
figure? Figure 2 Figure 3 (asl
Claims (1)
ロッドレンズと、光ファイバとを同一軸上に配置してな
るレーザモジュール。A laser module in which a semiconductor laser, a short pitch focusing rod lens with a pitch of 0.23 or less, and an optical fiber are arranged on the same axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14195084A JPS6120389A (en) | 1984-07-09 | 1984-07-09 | Laser module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14195084A JPS6120389A (en) | 1984-07-09 | 1984-07-09 | Laser module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6120389A true JPS6120389A (en) | 1986-01-29 |
Family
ID=15303897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14195084A Pending JPS6120389A (en) | 1984-07-09 | 1984-07-09 | Laser module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6120389A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280967A (en) * | 1989-04-20 | 1990-11-16 | Sanyo Denyoushiya:Kk | Wire conduit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211289A (en) * | 1981-06-22 | 1982-12-25 | Nippon Telegr & Teleph Corp <Ntt> | Semicondutor laser coupler for single mode optical fiber |
-
1984
- 1984-07-09 JP JP14195084A patent/JPS6120389A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211289A (en) * | 1981-06-22 | 1982-12-25 | Nippon Telegr & Teleph Corp <Ntt> | Semicondutor laser coupler for single mode optical fiber |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280967A (en) * | 1989-04-20 | 1990-11-16 | Sanyo Denyoushiya:Kk | Wire conduit |
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