JPS61199682A - Optical printer head - Google Patents

Optical printer head

Info

Publication number
JPS61199682A
JPS61199682A JP60040722A JP4072285A JPS61199682A JP S61199682 A JPS61199682 A JP S61199682A JP 60040722 A JP60040722 A JP 60040722A JP 4072285 A JP4072285 A JP 4072285A JP S61199682 A JPS61199682 A JP S61199682A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diodes
light
driving
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60040722A
Other languages
Japanese (ja)
Inventor
Yasutoshi Iwata
康稔 岩田
Masami Terasawa
正己 寺澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP60040722A priority Critical patent/JPS61199682A/en
Publication of JPS61199682A publication Critical patent/JPS61199682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

PURPOSE:To neutralize difference in brightness or wavelength of the light generated by light-emitting diodes by a method wherein the distance is made virtually same between driving IC element output electrodes and light-emitting diodes so that a virtually equal size of power may be applied to each of the light- emitting diodes. CONSTITUTION:Between a driving IC element 3 and light-emitting diodes 2 located on an insulating substrate 1, electrical wirings 4 are formed on the attached to the insulating substrate 1, electrically connecting the driving IC element 3 and the light-emitting diodes 2. The electrical wirings 4 are made of aluminum, copper, or the like, and formed on the attached to the insulating substrate 1 between the driving IC element 3 and the light-emitting diodes 2. The line formed of all the output electrodes 3a of the driving IC element 3 is arranged parallel to the line formed of the light-emitting diodes 2. With the distance between one output electrode 3a of the driving IC element 3 and one light-emitting diode 2 being equal to the distance between other electrodes 3a and diodes 2, the length of all the electrical wirings 4 is one and the same, which ensures a virtually equal electrical resistance for all the electrical wirings 4.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は電子写真式プリンタなどの記録装置の光源とし
て使用される光プリンタヘッドの改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in an optical printer head used as a light source in a recording device such as an electrophotographic printer.

（従来の技術） 近時、情報処理技術ならびに通信技術の進展に伴ない普
通紙に任意の漢字や図形を高速度、高品質で大量に出力
することができる小型で、かつ安価な電子写真式プリン
タが要求されている。そのためこの要求に対処するため
にプリンタの光源として絶縁基板上に複数個の発光ダイ
オード（ＬＥＤ）を直線状に配列取着して成る光プリン
タヘッドを使用した電子写真式プリンタが小型、高解像
度のものとして提案されている。(Prior technology) Recently, with the advancement of information processing technology and communication technology, small and inexpensive electrophotographic type that can output large quantities of arbitrary kanji and figures on plain paper at high speed and high quality has become available. A printer is requested. To meet this demand, an electrophotographic printer using an optical printer head consisting of a plurality of light emitting diodes (LEDs) mounted in a linear array on an insulating substrate as a light source for the printer is a small, high-resolution printer. It is proposed as such.

この従来の電子写真式プリンタに使用されている光プリ
ンタヘッドは通常、第３図及び第４図に示すようにセラ
ミック、ガラス等の電気絶縁材料から成る基板ｌｌ上に
ガリウム−砒素−リン（ＧａＡｓＰ　）等から成る発光
ダイオード（ＬＥＤ）１２を多数個、直線状に配列取着
するとともに該発光ダイオード１２を駆動する駆動用Ｉ
Ｃ素子１３を搭載した構造を有しており、駆動用ＩＣ素
子１３の駆動により直線状に配列した発光ダイオード１
２０個々に印加される電力を制御し、発光ダイオード１
２を選択的に発光させることＫよって電子写真式プリン
タの光源として機能する。As shown in FIGS. 3 and 4, the optical printer head used in this conventional electrophotographic printer is usually mounted on a substrate made of an electrically insulating material such as ceramic or glass. ) etc., a driving I for driving the light emitting diodes 12.
It has a structure in which a C element 13 is mounted, and the light emitting diodes 1 are linearly arranged by driving the driving IC element 13.
Control the power applied to each of the 20 light emitting diodes 1
2 functions as a light source for an electrophotographic printer.

尚、前記複数個の発光ダイオード１２は通常、６４個が
１単位として１つの発光ダイオードアレィ１２ａを構成
し、Ｂ４サイズの電子写真式プリンタの光源と１て使用
される場合には前記発光ダイオードアレイ１２ａは３２
個が直線状に配列される。Incidentally, the plurality of light emitting diodes 12 are usually 64 as one unit and constitute one light emitting diode array 12a, and when used together with the light source of a B4 size electrophotographic printer, the light emitting diodes 12 are Array 12a has 32
The pieces are arranged in a straight line.

（発明が解決しようとする問題点） しかし乍ら、この従来の光プリンタヘッドは発光ダイオ
ード（ＬＥＤ）１２の個々に電力を印加し、各発光ダイ
オード１２を選択的に発光させる駆動用工Ｃ素子１３の
各出力’を極１３ａが該駆動用ＩＣ素子１３の両端に分
かれて形成されており、かつ発光ダイオード１２の配列
方向に対し垂直方向に配列されていることから駆動用Ｉ
Ｃ素子１３の各出力電極１３ａは発光ダイオード１２と
の距離がそれぞれ異なシ、駆動用ＩＣ素子１３の各出力
電極１３ａと各発光ダイオード１２とを電気的に接続す
るための電気配線１４の長さも異なるものであった。そ
のためこの従来の光プリンタヘッドを使用して漢字や図
形を出力した場合、各電気配線１４はその電気抵抗値が
長さの相違によって異なることがら該電気配＃１１４を
介し駆動用ＩＣ素子１３から各発光ダイオード１２に印
加される電力の太き□さもばらつきを有し、その結果、
各発光ダイオード１２の発光輝度や発光波長にむらを生
じて高品質の印字、印画ができないという欠点を有して
い　−た。(Problems to be Solved by the Invention) However, in this conventional optical printer head, electric power is applied to each of the light emitting diodes (LEDs) 12, and a drive element C element 13 is used to selectively emit light from each light emitting diode (LED) 12. Since the poles 13a are formed separately at both ends of the driving IC element 13 and are arranged perpendicularly to the arrangement direction of the light emitting diodes 12, each output' of the driving IC
Each output electrode 13a of the C element 13 has a different distance from the light emitting diode 12, and the length of the electrical wiring 14 for electrically connecting each output electrode 13a of the driving IC element 13 and each light emitting diode 12 is also different. It was different. Therefore, when outputting kanji or figures using this conventional optical printer head, each electrical wiring 14 has a different electrical resistance value depending on the length, so the drive IC element 13 is The thickness of the power applied to each light emitting diode 12 also varies, and as a result,
This has the disadvantage that the luminance and wavelength of the light emitted from each light emitting diode 12 are uneven, making it impossible to print high quality characters.

（発明の目的） 本発明は上記欠点に鑑み案出されたもので発光ダイオー
ドと駆動用工Ｃ素子とを電気的に接続する電気配線のす
べての［気抵抗値を実質的に同一となし、各発光ダイオ
ードに印加される電力の大きさを均等となすことによっ
て発光ダイオードに発生する発光輝度や発光波長のむら
を解消し、高品質の印字、印画を得ることができる光プ
リンタヘッドを提供することにある。(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and the present invention has been devised in view of the above-mentioned drawbacks. An object of the present invention is to provide an optical printer head that can eliminate unevenness in light emission brightness and light emission wavelength that occurs in light emitting diodes by equalizing the magnitude of electric power applied to the light emitting diodes, and can obtain high-quality prints and prints. be.

（問題点を解決するための手段） 本発明は絶縁基板上に複数個の発光ダイオードを直線状
に配列取着するとともに該発光ダイオードを選択的に発
光させる駆動用工Ｃ素子を搭載して成る光プリンタヘッ
ドにおいて、前記駆動用ＩＣ素子のすべての出力［極と
発光ダイオードとの距離を実質的に同一となしたことを
特徴とするものである。(Means for Solving the Problems) The present invention provides a light emitting diode comprising a plurality of light emitting diodes arranged and mounted on an insulating substrate in a linear manner, and a driving element for selectively emitting light from the light emitting diodes. The printer head is characterized in that the distances between all the outputs of the driving IC elements and the light emitting diodes are substantially the same.

（実施例） 次に本発明を添付図面に示す実施例に基づき詳細に説明
する。(Example) Next, the present invention will be described in detail based on an example shown in the accompanying drawings.

第１図及び第２図は本発明の光プリンタヘッドの一実施
例を示し、１はセラミック、ガラス等の電気絶縁材料か
ら成る基板であシ、その表面に発光ダイオード（ＬＥＤ
）２及び駆動用ＩＣ素子３がそれ全れ取着搭載されてい
る。1 and 2 show an embodiment of the optical printer head of the present invention, in which 1 is a substrate made of an electrically insulating material such as ceramic or glass, and a light emitting diode (LED) is mounted on the surface of the substrate.
) 2 and driving IC element 3 are all attached and mounted.

前記発光ダイオード２はＧａＡｓＰ糸、ＧａＰ糸等の発
光ダイオードが使用されＪ例えばＧａＡｓＰ系の発光ダ
イオードの場合には、先ずＧａＡＳの基板を炉中にて高
温に加熱するとともにＡｓＨｓ　（アルシン）とＰＨ５
（ホスヒン）とＧａ（ガリウム）を適量に含むガスを接
触させて基板表面にｎ型半導体のＧａＡｓＰ　（ガリウ
ム−砒素−リン）の単結晶を成長させ、次に前記ＧａＡ
８Ｆ単結晶層表面に５ｉ３Ｎｔ　（窒化シリコン）の愈
付膜を被着させるとともに該窓部にＺｎ　（亜鉛）のガ
スをさらし、　ｎ型半導体のＧａＡｓｐ単結晶層の一部
にＺｎを拡散させてＰ型半導体を形成し、Ｐｎ接合をも
たすことによって形成される。For the light emitting diode 2, a light emitting diode made of GaAsP thread, GaP thread, etc. is used. For example, in the case of a GaAsP light emitting diode, first, a GaAS substrate is heated to a high temperature in a furnace, and AsHs (arsine) and PH5 are used.
A single crystal of GaAsP (gallium-arsenic-phosphide), an n-type semiconductor, is grown on the substrate surface by contacting a gas containing appropriate amounts of (phosphine) and Ga (gallium).
A 5i3Nt (silicon nitride) film was deposited on the surface of the 8F single crystal layer, and the window was exposed to Zn (zinc) gas to diffuse Zn into a part of the n-type semiconductor GaAsp single crystal layer. It is formed by forming a P-type semiconductor and providing a Pn junction.

また前記発光ダイオード（ｒ、ｐＤ）２は絶縁基板１上
に直線状に配列されて取着されており、Ｂ４サイズの電
子写真式プリンタに使用される光プリンタヘッドの場合
には２０４８個（ＩＰＩＩ渭当り８個）の発光ダイオー
ド２が直線状に配列される。The light emitting diodes (r,pD) 2 are linearly arranged and attached on the insulating substrate 1, and in the case of an optical printer head used for a B4 size electrophotographic printer, there are 2048 light emitting diodes (IPII Eight light emitting diodes 2 per arm are arranged in a straight line.

尚、この場合、発光ダイオード２はその６４個が１屯位
として１つの発光ダイオードアレイ２ａを構成し、該発
光ダイオードアレイ２ａを３２個、直線状に配列するこ
とによって２０４８個の発光ダイオード２が絶縁基板１
上に直線状に配列取着される。In this case, 64 light emitting diodes 2 constitute one light emitting diode array 2a, and by arranging 32 light emitting diode arrays 2a in a straight line, 2048 light emitting diodes 2 are formed. Insulating substrate 1
are attached in a linear array on the top.

前転絶縁基板１上の直線状に配列された発光ダイオード
２の両側には該発光ダイオード２の配列に対し平行とな
るように駆動用ＩＣ素子３が搭載されており、駆動用工
Ｃ素子３の各出力電極３ａは該ＩＣ素子３の一側辺で、
かつ発光ダイオード２の配列と平行となるように形成さ
れている。これにより各発光ダイオード２と駆動用ＩＣ
素子３の各出力ｔｉ［３ａとの距離は実質的にすべて同
一となすことが可能となる。Drive IC elements 3 are mounted on both sides of the light emitting diodes 2 arranged linearly on the forward insulating substrate 1 so as to be parallel to the arrangement of the light emitting diodes 2. Each output electrode 3a is on one side of the IC element 3,
Moreover, it is formed so as to be parallel to the arrangement of the light emitting diodes 2. As a result, each light emitting diode 2 and the driving IC
The distances from each output ti[3a of the element 3 can be made substantially the same.

尚、前記駆動用ＩＣ素子３は発光ダイオード２の両側に
分けて搭載したが、上下いずれかの片側にのみ搭載して
もよい。Although the driving IC element 3 is mounted separately on both sides of the light emitting diode 2, it may be mounted only on either the upper or lower side.

前記駆動用ＩＣ素子３は従来周却の半導体技術により作
製され、発光ダイオード２に印加される電力を制御して
発光ダイオード２を選択的に発光させる作用を為す。The driving IC element 3 is manufactured using conventional semiconductor technology, and has the function of controlling the power applied to the light emitting diode 2 to selectively cause the light emitting diode 2 to emit light.

また前記駆動用ＩＣ素子３と発光ダイオード２との間の
絶縁基板１上には該駆動用工Ｃ素子３と発光ダイオード
２とを電気的に接続するための電気配置ｓ４が被着形成
されている。この電気配線４はアルミニウム（ＡＩ）　
、銅（Ｃｕ）等の金属材料から成υ、従来周知のスクリ
ーン印刷による厚膜手法や蒸着、スパッタリング等によ
る薄膜手法を採用することにより絶縁基板１上で駆動用
ＩＣ素子３と発光ダイオード２との間に被着形成される
。この場合、駆動用工Ｃ素子３のすべての出力を極３ａ
が発光ダイオード２の配列に対し平行となっており、駆
動用ＩＣ素子３の各出力［ｆｆ１ａａと各発光ダイオー
ド２との距離が同一であることからすべての電気配線４
の長さを同一となすとともにその電気抵抗値を実質的に
同一となすことができる。Furthermore, an electrical arrangement s4 for electrically connecting the driving IC element 3 and the light emitting diode 2 is formed on the insulating substrate 1 between the driving IC element 3 and the light emitting diode 2. . This electrical wiring 4 is made of aluminum (AI)
The driving IC element 3 and the light emitting diode 2 are formed on the insulating substrate 1 by employing a conventional thick film method using screen printing or a thin film method using vapor deposition, sputtering, etc., from a metal material such as copper (Cu). Adhesion is formed during the process. In this case, all outputs of the driving device C element 3 are connected to the pole 3a.
is parallel to the array of light emitting diodes 2, and since the distance between each output [ff1aa of the driving IC element 3 and each light emitting diode 2 is the same, all electrical wiring 4
It is possible to make the lengths the same and to make the electrical resistance values substantially the same.

前記電気配線４はその両端に発光ダイオ−！！２及び駆
動用ＩＣ素子３の各出力電極３ａがそれぞれアルミニウ
ム（ＡＩ）、金（Ａｕ）等の細線（ボンディングワイヤ
）５を介し接続され、これによって各発光ダイオード２
と駆動用ＩＣ素子３は電電配線４を介しｉｔ電気的接続
されることとなる。The electrical wiring 4 has light emitting diodes at both ends! ! 2 and each output electrode 3a of the driving IC element 3 are connected via thin wires (bonding wires) 5 made of aluminum (AI), gold (Au), etc., so that each light emitting diode 2
and the driving IC element 3 are electrically connected via the electrical wiring 4.

（発明の効果） カくシて本発明の光プリンタヘッドによれば発光ダイオ
ードを選択発光させる駆動用工Ｃ素子のすべての出力電
極と発光ダイオードとの’Ｅ＝４を実質的に同一となし
たことにより駆動用工Ｃ素子と発光ダイオードとを！気
的に接続する電気配線の電気抵抗値を実質的に同一とな
すことができ、これによって各発光ダイオードに印加さ
れる電力の大きさは均等となり、各発光ダイオードが発
する光の発光一度及び発光波長も均等となって極めて高
品質の印字、印画を出力させることが可能となる。(Effects of the Invention) According to the optical printer head of the present invention, 'E=4 of all output electrodes of the drive element C for selectively emitting light from the light emitting diodes and the light emitting diodes is made substantially the same. By this means, the drive C element and the light emitting diode! The electric resistance value of the electrical wiring that is electrically connected can be made substantially the same, and as a result, the amount of power applied to each light emitting diode is equalized, and the amount of light emitted by each light emitting diode is reduced. The wavelengths are also uniform, making it possible to output extremely high quality prints and prints.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の光プリンタヘッドの一部分を示す平面
図、第２図は第１図の縦断面図、第３図は従来の光プリ
ンタヘッドの一部分を示す平面図、第４図は第３図の縦
断面図である。 １．１１−一絶縁基板 ２．１２・・・発光ダイオード ３．１３・・・駆動用ＩＣ素子 ４．１４・・・ｔ　気　配　線FIG. 1 is a plan view showing a portion of the optical printer head of the present invention, FIG. 2 is a vertical sectional view of FIG. 1, FIG. 3 is a plan view showing a portion of the conventional optical printer head, and FIG. FIG. 3 is a longitudinal cross-sectional view of FIG. 3; 1.11-Insulating substrate 2.12...Light emitting diode 3.13...Drive IC element 4.14...t Wiring

Claims (1)

【特許請求の範囲】[Claims] 絶縁基板上に複数個の発光ダイオードを直線状に配列取
着するとともに該発光ダイオードを選択的に発光させる
駆動用ＩＣ素子を搭載して成る光プリンタヘッドにおい
て、前記駆動用ＩＣ素子のすべての出力電極と発光ダイ
オードとの距離を実質的に同一となしたことを特徴とす
る光プリンタヘッドIn an optical printer head comprising a plurality of light emitting diodes linearly arranged and mounted on an insulating substrate and a driving IC element for selectively emitting light from the light emitting diodes, all outputs of the driving IC element are mounted. An optical printer head characterized in that the distance between the electrode and the light emitting diode is substantially the same.
JP60040722A 1985-02-28 1985-02-28 Optical printer head Pending JPS61199682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60040722A JPS61199682A (en) 1985-02-28 1985-02-28 Optical printer head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60040722A JPS61199682A (en) 1985-02-28 1985-02-28 Optical printer head

Publications (1)

Publication Number Publication Date
JPS61199682A true JPS61199682A (en) 1986-09-04

Family

ID=12588489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60040722A Pending JPS61199682A (en) 1985-02-28 1985-02-28 Optical printer head

Country Status (1)

Country Link
JP (1) JPS61199682A (en)

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