JPH0435178Y2 - - Google Patents
Info
- Publication number
- JPH0435178Y2 JPH0435178Y2 JP1986098755U JP9875586U JPH0435178Y2 JP H0435178 Y2 JPH0435178 Y2 JP H0435178Y2 JP 1986098755 U JP1986098755 U JP 1986098755U JP 9875586 U JP9875586 U JP 9875586U JP H0435178 Y2 JPH0435178 Y2 JP H0435178Y2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- wiring conductor
- driving
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- YSWYYGKGAYSAOJ-UHFFFAOYSA-N phosphane Chemical compound P.P YSWYYGKGAYSAOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dot-Matrix Printers And Others (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は電子写真式プリンタなどの記録装置の
光源として使用される光プリンタヘツドの改良に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an improvement in an optical printer head used as a light source in a recording device such as an electrophotographic printer.
（従来の技術）
近時、情報処理技術ならびに通信技術の進展に
伴い普通紙に任意の漢字や図形を高速度、高品質
で大量に出力することができる小型で、かつ安価
な電子写真式プリンタが要求されている。そのた
めこの要求に対処するためにプリンタの光源とし
て絶縁基板上に複数個の発光ダイオード（LED）
を直線状に配列取着して成る光プリンタヘツドを
使用した電子写真式プリンタが小型、高解像度の
ものとして提案されている。(Prior art) With the recent advances in information processing technology and communication technology, small and inexpensive electrophotographic printers that can output large quantities of arbitrary kanji and figures on plain paper at high speed and with high quality have become popular. is required. Therefore, in order to meet this requirement, multiple light emitting diodes (LEDs) are installed on an insulating substrate as a light source for the printer.
Electrophotographic printers have been proposed as compact, high-resolution printers that use optical printer heads that are arranged in a linear manner.
この従来の電子写真式プリンタに使用されてい
る光プリンタヘツドは通常、第３図及び第４図に
示すようにアルミナセラミツク等の電気絶縁材料
から成る基板１１上に直線状に配列したガリウム
−砒素−リン（GaAsP）等から成る発光ダイオ
ード（LED）１２と、該発光ダイオード１２を
選択的に発光させるための駆動用IC素子１３と、
発光ダイオード１２と駆動用IC素子１３を電気
的に接続する配線導体１４とを取着搭載した構造
を有しており、駆動用IC素子１３の駆動により
直線状に配列した発光ダイオード１２の個々に印
加される電力を制御し、発光ダイオード１２を選
択的に発光させることによつて電子写真式プリン
タの光源として機能する。 The optical printer head used in this conventional electrophotographic printer usually has gallium-arsenic elements arranged in a straight line on a substrate 11 made of an electrically insulating material such as alumina ceramic, as shown in FIGS. 3 and 4. - a light emitting diode (LED) 12 made of phosphorus (GaAsP) or the like; a driving IC element 13 for selectively causing the light emitting diode 12 to emit light;
It has a structure in which a wiring conductor 14 that electrically connects the light emitting diodes 12 and the driving IC element 13 is attached and mounted, and when the driving IC element 13 is driven, the light emitting diodes 12 arranged in a linear manner are individually connected. By controlling the applied power and selectively causing the light emitting diode 12 to emit light, it functions as a light source for an electrophotographic printer.
尚、前記複数個の発光ダイオード１２は通常、
64個が１単位として１つの発光ダイオードアレイ
１２ａを構成し、B4サイズの電子写真式プリン
タの光源として使用される場合には前記発光ダイ
オードアレイ１２ａは32個が直線状に配列され
る。 Note that the plurality of light emitting diodes 12 are usually
A unit of 64 light emitting diode arrays 12a constitutes one light emitting diode array 12a, and when used as a light source for a B4 size electrophotographic printer, 32 light emitting diode arrays 12a are arranged in a straight line.
この従来の光プリンタヘツドは、電子写真式プ
リンタの解像度を上げるために、通常、発光ダイ
オード１２が１mm当り８〜10個設けられており、
該各発光ダイオード１２を駆動用IC素子１３に
接続する配線導体１４も微細配線の形成が可能な
薄膜手法により線幅を約60μmとして１mm当たり
８〜10本形成されている。
This conventional optical printer head is usually provided with 8 to 10 light emitting diodes 12 per 1 mm in order to increase the resolution of the electrophotographic printer.
The wiring conductors 14 connecting each of the light emitting diodes 12 to the driving IC element 13 are also formed using a thin film method that allows the formation of fine wiring, with a line width of about 60 μm and 8 to 10 conductors per 1 mm.
しかし乍ら、絶縁基板１１はその表面に多数の
凹凸を有しており、該絶縁基板１１の表面に配線
導体１４を薄膜手法により直接形成した場合、配
線導体１４が絶縁基板１１の表面凹凸によつて断
線してしまい、その結果、すべての発光ダイオー
ド１２を駆動用IC素子１３に確実に電気的に接
続することができず、光プリンタヘツドとしての
機能に支障を来すという欠点を有していた。 However, the insulating substrate 11 has a large number of irregularities on its surface, and when the wiring conductor 14 is directly formed on the surface of the insulating substrate 11 by a thin film method, the wiring conductor 14 does not conform to the irregularities on the surface of the insulating substrate 11. As a result, all of the light emitting diodes 12 cannot be reliably electrically connected to the driving IC element 13, which has the disadvantage of interfering with the function of the optical printer head. was.
また上記欠点を解消するために絶縁基板１１の
表面全体にグレーズ層を設け、基板１１表面を平
滑と成すことも考えられるが、絶縁基板１１の表
面全体にグレーズ層を設けると該絶縁基板１１上
に取着搭載される発光ダイオード１２の下部にも
熱伝導率が悪いグレーズ層が配されることとな
り、そのため発光ダイオード１２に電力を印加し
発光させた場合、発光ダイオード１２の発する熱
はその外部への伝導がグレーズ層により遮断さ
れ、発光ダイオード１２内部に蓄積してしまい、
その結果、発光ダイオード１２が高温となつて発
光波長、発光輝度にバラツキを生じ、高品質の印
字、印画ができないという欠点も有していた。 Further, in order to eliminate the above-mentioned drawbacks, it is possible to provide a glaze layer on the entire surface of the insulating substrate 11 to make the surface of the substrate 11 smooth. However, if a glaze layer is provided on the entire surface of the insulating substrate 11, A glaze layer with poor thermal conductivity is also placed under the light emitting diode 12 mounted on the board, so that when power is applied to the light emitting diode 12 to cause it to emit light, the heat emitted by the light emitting diode 12 is transferred to the outside. conduction to the light emitting diode 12 is blocked by the glaze layer and accumulates inside the light emitting diode 12.
As a result, the light emitting diode 12 becomes hot, causing variations in the emission wavelength and luminance, which also has the drawback of not being able to perform high-quality printing.
本考案は上記欠点に鑑み案出されたものでその
目的は発光ダイオードと駆動用IC素子とを確実
に電気的接続することができ、かつ発光ダイオー
ドに発生する発光輝度や発光波長のバラツキを皆
無として高品質の印字、印画を得ることができる
光プリンタヘツドを提供することにある。
The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to provide a reliable electrical connection between a light emitting diode and a driving IC element, and to eliminate variations in luminance and wavelength that occur in light emitting diodes. Our objective is to provide an optical printer head that can produce high-quality prints and prints.
本考案は電気絶縁性基板の一主面上に直線状に
配列した複数個の発光ダイオードと、該発光ダイ
オードに一端が接続された配線導体と、前記配線
導体の他端に接続された駆動用IC素子とを取着
搭載して成る光プリンタヘツドにおいて、前記配
線導体の下部にグレーズ層を配したことを特徴と
するものである。
The present invention includes a plurality of light emitting diodes arranged linearly on one main surface of an electrically insulating substrate, a wiring conductor connected at one end to the light emitting diodes, and a driving conductor connected to the other end of the wiring conductor. An optical printer head having an IC element mounted thereon is characterized in that a glaze layer is disposed below the wiring conductor.
次に本考案を第１図及び第２図に示す実施例に
基づき詳細に説明する。
Next, the present invention will be explained in detail based on the embodiment shown in FIGS. 1 and 2.
第１図及び第２図は本考案の光プリンタヘツド
の一実施例を示し、１はアルミナセラミツク等の
電気絶縁材料から成る基板であり、その表面に発
光ダイオード（LED）２及び駆動用IC素子３が
それぞれ取着搭載されている。 1 and 2 show an embodiment of the optical printer head of the present invention, in which 1 is a substrate made of an electrically insulating material such as alumina ceramic, and a light emitting diode (LED) 2 and a driving IC element are mounted on the surface of the substrate. 3 are installed respectively.
前記発光ダイオード２はGaAsP系、GaP系等
の発光ダイオードが使用され、例えばGaAsP系
の発光ダイオードの場合には、先ずGaAsの基板
を炉中にて高温に加熱するとともにAsH3（アル
シン）とPH3（ホスヒン）とGa（ガリウム）を適
量に含むガスを接触させて基板表面にｎ型半導体
のGaAsP（ガリウム−砒素−リン）の単結晶を成
長させ、次に前記GaAsP単結晶層表面にSi3N4
（窒化シリコン）の窓付膜を被着させるとともに
該窓部にZn（亜鉛）のガスをさらし、ｎ型半導体
のGaAsP単結晶層の一部にZnを拡散させてＰ型
半導体を形成し、Pn接合をもたすことによつて
形成される。 The light-emitting diode 2 is a GaAsP-based or GaP-based light-emitting diode. For example, in the case of a GaAsP-based light-emitting diode, a GaAs substrate is first heated to a high temperature in a furnace, and then heated with AsH 3 (arsine) and PH. 3 A single crystal of GaAsP (gallium-arsenic-phosphide), an n-type semiconductor, is grown on the substrate surface by contacting a gas containing appropriate amounts of phosphine (phosphine) and Ga (gallium), and then Si is grown on the surface of the GaAsP single crystal layer. 3 N 4
(silicon nitride) film with a window is deposited, and the window portion is exposed to Zn (zinc) gas to diffuse Zn into a part of the GaAsP single crystal layer of the n-type semiconductor to form a P-type semiconductor, It is formed by providing a Pn junction.
また前記発光ダイオード（LED）２は絶縁基
板１上に直線状に配列されて取着されており、
B4サイズの電子写真式プリンタに使用される光
プリンタヘツドの場合には2048個（１mm当たり８
個）の発光ダイオード２が直線状に配列される。
尚、この場合、発光ダイオード２はその64個が１
単位として１つの発光ダイオードアレイ２ａを構
成し、該発光ダイオードアレイ２ａを32個、直線
状に配列することによつて2048個の発光ダイオー
ド２が絶縁基板１上に直線状に配列取着される。 Further, the light emitting diodes (LEDs) 2 are mounted on the insulating substrate 1 in a linear arrangement,
In the case of an optical printer head used in a B4 size electrophotographic printer, there are 2048 heads (8 per 1 mm).
2) of light emitting diodes 2 are arranged in a straight line.
In this case, 64 of the light emitting diodes 2 are 1
By configuring one light emitting diode array 2a as a unit and arranging 32 light emitting diode arrays 2a in a straight line, 2048 light emitting diodes 2 are arranged and attached in a straight line on the insulating substrate 1. .
前記絶縁基板１上の直線状に配列された発光ダ
イオード２の両側には該発光ダイオード２の配列
に対し平行となるように駆動用IC素子３が搭載
されており、駆動用IC素子３の各出力電極３ａ
は該IC素子３の一側辺で、かつ発光ダイオード
２の配列と平行となるように形成されている。こ
れにより各発光ダイオード２と駆動用IC素子３
の各出力電極３ａとの距離は実質的にすべて同一
となすことが可能となる。 Drive IC elements 3 are mounted on both sides of the light emitting diodes 2 arranged linearly on the insulating substrate 1 so as to be parallel to the arrangement of the light emitting diodes 2. Output electrode 3a
is formed on one side of the IC element 3 and parallel to the arrangement of the light emitting diodes 2. As a result, each light emitting diode 2 and driving IC element 3
The distances from each output electrode 3a can be made substantially the same.
尚、前記駆動用IC素子３は発光ダイオード２
の両側に分けて搭載したが、上下いずれかの片側
にのみ搭載してもよい。 Note that the driving IC element 3 is a light emitting diode 2.
Although it is installed separately on both sides, it may also be installed on only one side, either the top or bottom.
前記駆動用IC素子３は従来周知の半導体技術
により作製され、発光ダイオード２に印加される
電力を制御して発光ダイオード２を選択的に発光
させる作用を為す。 The driving IC element 3 is manufactured using a conventionally well-known semiconductor technology, and has the function of controlling the power applied to the light emitting diode 2 to selectively cause the light emitting diode 2 to emit light.
また前記駆動用IC素子３と発光ダイオード２
との間の絶縁基板１上には該駆動用IC素子３の
各出力電極３ａと各発光ダイオード２とを電気的
に接続するための配線導体４が被着形成されてい
る。この配線導体４はアルミニウム（Al）、銅
（Cu）等の金属材料から成り、従来周知の蒸着や
スパツタリング等による薄膜手法を採用すること
により絶縁基板１上で駆動用IC素子３と発光ダ
イオード２との間に被着形成される。 In addition, the driving IC element 3 and the light emitting diode 2
A wiring conductor 4 for electrically connecting each output electrode 3a of the driving IC element 3 and each light emitting diode 2 is formed on the insulating substrate 1 between the two. The wiring conductor 4 is made of a metal material such as aluminum (Al) or copper (Cu), and is formed on the insulating substrate 1 by using a thin film method such as vapor deposition or sputtering. An adhesion is formed between the two.
前記配線導体４はその両端に発光ダイオード２
および駆動用IC素子３の出力電極３ａがそれぞ
れアルミニウム（Al）、金（Au）等の細線（ボ
ンデイングワイヤ）５を介して接続され、これに
よつて各発光ダイオード２と駆動用IC素子３と
は配線導体４を介し電気的に接続されることとな
る。 The wiring conductor 4 has light emitting diodes 2 at both ends thereof.
The output electrodes 3a of the driving IC elements 3 are connected via thin wires (bonding wires) 5 made of aluminum (Al), gold (Au), etc., and thereby each light emitting diode 2 and the driving IC element 3 are electrically connected via the wiring conductor 4.
かくして、駆動用IC素子３の駆動により駆動
用IC素子３の出力電極３ａ及び配線導体４を介
し発光ダイオード２の個々に印加される電力を制
御し、発光ダイオード２を均一波長、均一輝度で
選択的に発光させることによつて電子写真式プリ
ンタの光源として機能する。 In this way, by driving the driving IC element 3, the power applied to each light emitting diode 2 is controlled via the output electrode 3a of the driving IC element 3 and the wiring conductor 4, and the light emitting diode 2 is selected with uniform wavelength and uniform brightness. By emitting light, it functions as a light source for an electrophotographic printer.
本考案の光プリンタヘツドにおいては発光ダイ
オード２と駆動用IC素子３とを電気的に接続す
る配線導体４の下部にグレーズ層を配しておくこ
とが重要である。このため第１図及び第２図に示
すように配線導体４の下部、即ち配線導体４と絶
縁基板１との間にグレーズ層６が配されている。
このように配線導体４の下部にグレーズ層６を配
すると該グレーズ層６は表面が極めて平滑である
ことから絶縁基板１がその表面に凹凸を有し、表
面粗さが粗いとして配線導体４が直接形成される
面は極めて平滑となる。そのためグレーズ層６表
面に配線導体４の微細配線を薄膜手法により形成
しても配線導体４は断線を生じることが一切な
く、発光ダイオード２と駆動用IC素子３とを確
実に電気的接続することが可能となる。 In the optical printer head of the present invention, it is important to provide a glaze layer below the wiring conductor 4 that electrically connects the light emitting diode 2 and the driving IC element 3. For this purpose, as shown in FIGS. 1 and 2, a glaze layer 6 is disposed below the wiring conductor 4, that is, between the wiring conductor 4 and the insulating substrate 1.
When the glaze layer 6 is disposed under the wiring conductor 4 in this way, the surface of the glaze layer 6 is extremely smooth, so that the insulating substrate 1 has unevenness on its surface, and the wiring conductor 4 is rough because the surface is rough. The directly formed surface will be extremely smooth. Therefore, even if fine wiring of the wiring conductor 4 is formed on the surface of the glaze layer 6 by a thin film method, the wiring conductor 4 will not be disconnected at all, and the light emitting diode 2 and the driving IC element 3 can be electrically connected reliably. becomes possible.
また、グレーズ層６は絶縁基板１の配線導体４
が形成される部位のみ配されており、発光ダイオ
ード２が取着搭載される部位には存在しないこと
から、発光ダイオード２が発する熱は熱伝導率の
高い絶縁基板１に良好に吸収されることとなり、
発光ダイオード２をそれ自体が発する熱により高
温となして発光輝度や発光波長にバラツキを発生
させることもない。 Further, the glaze layer 6 is formed on the wiring conductor 4 of the insulating substrate 1.
The heat emitted by the light emitting diode 2 is well absorbed by the insulating substrate 1, which has a high thermal conductivity, because the light emitting diode 2 is not present in the part where the light emitting diode 2 is attached and mounted. Then,
There is no possibility that the light emitting diode 2 will be heated to a high temperature due to the heat generated by itself, thereby causing variations in luminance and wavelength of light emission.
尚、前記グレーズ層６はSiO2，BaO，Al2O3，
CaO等のガラス成分から成り、上記ガラス成分粉
末に適当な有機溶剤、溶媒を添加混合してガラス
ペーストを作成し、これを絶縁基板１表面の配線
導体４が形成される部位に従来周知のスクリーン
印刷等の厚膜手法により印加塗布するとともに約
1200℃の温度で焼成し、加熱溶融させることによ
つて絶縁基板１表面に被着形成される。 The glaze layer 6 is made of SiO 2 , BaO, Al 2 O 3 ,
The glass paste is made of a glass component such as CaO, and a suitable organic solvent or solvent is added and mixed to the glass component powder, and this paste is applied to the area where the wiring conductor 4 is to be formed on the surface of the insulating substrate 1 using a conventionally well-known screen. Approximately
It is baked at a temperature of 1200° C. and is deposited on the surface of the insulating substrate 1 by heating and melting it.
また前記グレーズ層６はその厚みを40〜80μm
とすると安価にしてかつ配線導体４が形成される
表面を該配線導体４に断線を生じさせないような
平滑となすことができる。 The thickness of the glaze layer 6 is 40 to 80 μm.
This makes it possible to reduce the cost and make the surface on which the wiring conductor 4 is formed smooth so as to prevent the wiring conductor 4 from being disconnected.
本考案の光プリンタヘツドによれば、発光ダイ
オードと駆動用IC素子とを電気的に接続する配
線導体の下部に表面が極めて平滑なグレーズ層を
配したことから配線導体の微細配線を薄膜手法に
より形成したとしても該配線導体が断線すること
は一切なく、発光ダイオードと駆動用IC素子と
を確実に電気的に接続することが可能となつて光
プリンタヘツドを正常に作動させることができ
る。
According to the optical printer head of the present invention, a glaze layer with an extremely smooth surface is placed under the wiring conductor that electrically connects the light emitting diode and the driving IC element, so that fine wiring of the wiring conductor can be formed using a thin film method. Even if the wiring conductor is formed, the wiring conductor will not be disconnected at all, and the light emitting diode and the driving IC element can be reliably electrically connected, and the optical printer head can be operated normally.
またグレーズ層は配線導体の下部のみ配されて
おり発光ダイオードの下部には存在しないことか
ら発光ダイオードが発する熱は熱伝導率が高い絶
縁基板に良好に吸収させることができ発光ダイオ
ードを高温になして発光輝度や発光波長にバラツ
キが発生するのを皆無とし極めて高品質の印字、
印画を出力させることが可能となる。 In addition, since the glaze layer is placed only below the wiring conductor and is not present below the light emitting diode, the heat emitted by the light emitting diode can be well absorbed by the insulating substrate, which has high thermal conductivity, and the light emitting diode does not become hot. There is no variation in luminance or wavelength, resulting in extremely high-quality printing.
It becomes possible to output a print.
第１図は本考案の光プリンタヘツドの一部を示
す平面図、第２図は第１図の縦断面図、第３図は
従来の光プリンタヘツドの一部分を示す平面図、
第４図は第３図の縦断面図である。
１，１１……絶縁基板、２，１２……発光ダイ
オード、３，１３……駆動用IC素子、４，１４
……配線導体、６……グレーズ層。
FIG. 1 is a plan view showing a part of the optical printer head of the present invention, FIG. 2 is a longitudinal sectional view of FIG. 1, and FIG. 3 is a plan view showing a part of the conventional optical printer head.
FIG. 4 is a longitudinal sectional view of FIG. 3. 1, 11... Insulating substrate, 2, 12... Light emitting diode, 3, 13... Drive IC element, 4, 14
...Wiring conductor, 6...Glaze layer.
Claims (1)
複数個の発光ダイオードと、該発光ダイオードに
一端が接続された配線導体と、前記配線導体の他
端に接続された駆動用IC素子とを取着搭載して
成る光プリンタヘツドにおいて、前記配線導体の
下部にグレーズ層を配したことを特徴とする光プ
リンタヘツド。 A plurality of light emitting diodes arranged linearly on one principal surface of an electrically insulating substrate, a wiring conductor having one end connected to the light emitting diodes, and a driving IC element connected to the other end of the wiring conductor. What is claimed is: 1. An optical printer head comprising: a glaze layer disposed below the wiring conductor;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986098755U JPH0435178Y2 (en) | 1986-06-26 | 1986-06-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986098755U JPH0435178Y2 (en) | 1986-06-26 | 1986-06-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636853U JPS636853U (en) | 1988-01-18 |
| JPH0435178Y2 true JPH0435178Y2 (en) | 1992-08-20 |
Family
ID=30967007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986098755U Expired JPH0435178Y2 (en) | 1986-06-26 | 1986-06-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0435178Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2218571A1 (en) * | 2009-01-30 | 2010-08-18 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Illumination system for use in a stereolithography apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612509A (en) * | 1984-06-15 | 1986-01-08 | 株式会社クボタ | Continuous roll press method of plastic material |
-
1986
- 1986-06-26 JP JP1986098755U patent/JPH0435178Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612509A (en) * | 1984-06-15 | 1986-01-08 | 株式会社クボタ | Continuous roll press method of plastic material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636853U (en) | 1988-01-18 |
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