JPS61196572A - アモルフアスシリコンｘ線センサ - Google Patents

アモルフアスシリコンｘ線センサ

Info

Publication number
JPS61196572A
JPS61196572A JP60036200A JP3620085A JPS61196572A JP S61196572 A JPS61196572 A JP S61196572A JP 60036200 A JP60036200 A JP 60036200A JP 3620085 A JP3620085 A JP 3620085A JP S61196572 A JPS61196572 A JP S61196572A
Authority
JP
Japan
Prior art keywords
amorphous silicon
semiconductor film
type
film
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60036200A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550857B2 (enrdf_load_html_response
Inventor
Hidehiko Maehata
英彦 前畑
Atsuo Hori
堀　厚生
Yoshihiro Hamakawa
圭弘 浜川
Hiroaki Okamoto
博明 岡本
Koufu Gi
魏　光普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanadevia Corp
Original Assignee
Hitachi Zosen Corp
Hitachi Shipbuilding and Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Zosen Corp, Hitachi Shipbuilding and Engineering Co Ltd filed Critical Hitachi Zosen Corp
Priority to JP60036200A priority Critical patent/JPS61196572A/ja
Publication of JPS61196572A publication Critical patent/JPS61196572A/ja
Publication of JPH0550857B2 publication Critical patent/JPH0550857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
    • G01T1/362—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP60036200A 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ Granted JPS61196572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60036200A JPS61196572A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60036200A JPS61196572A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Publications (2)

Publication Number Publication Date
JPS61196572A true JPS61196572A (ja) 1986-08-30
JPH0550857B2 JPH0550857B2 (enrdf_load_html_response) 1993-07-30

Family

ID=12463090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60036200A Granted JPS61196572A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Country Status (1)

Country Link
JP (1) JPS61196572A (enrdf_load_html_response)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243780A (ja) * 1987-03-30 1988-10-11 Kanegafuchi Chem Ind Co Ltd Ｘ線検出装置
US5291036A (en) * 1989-12-28 1994-03-01 Minnesota Mining And Manufacturing Company Amorphous silicon sensor
US5420452A (en) * 1990-02-09 1995-05-30 Minnesota Mining And Manufacturing Company Solid state radiation detector
NL1003390C2 (nl) * 1996-06-21 1997-12-23 Univ Delft Tech Vlakke stralingssensor en werkwijze voor haar vervaardiging.
US5942771A (en) * 1997-04-14 1999-08-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector
JP2005523438A (ja) * 2002-04-18 2005-08-04 フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング 両接触表面に微細構造を有する位置感応型ゲルマニウム検出器
JP4894921B2 (ja) * 2007-05-24 2012-03-14 コニカミノルタホールディングス株式会社 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169382A (enrdf_load_html_response) * 1974-12-13 1976-06-15 Hitachi Ltd
JPS59154082A (ja) * 1983-02-22 1984-09-03 Oki Electric Ind Co Ltd 光センサ
JPS59182561A (ja) * 1983-03-31 1984-10-17 Mitsubishi Electric Corp 半導体イメ−ジセンサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169382A (enrdf_load_html_response) * 1974-12-13 1976-06-15 Hitachi Ltd
JPS59154082A (ja) * 1983-02-22 1984-09-03 Oki Electric Ind Co Ltd 光センサ
JPS59182561A (ja) * 1983-03-31 1984-10-17 Mitsubishi Electric Corp 半導体イメ−ジセンサ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243780A (ja) * 1987-03-30 1988-10-11 Kanegafuchi Chem Ind Co Ltd Ｘ線検出装置
US5291036A (en) * 1989-12-28 1994-03-01 Minnesota Mining And Manufacturing Company Amorphous silicon sensor
US5420452A (en) * 1990-02-09 1995-05-30 Minnesota Mining And Manufacturing Company Solid state radiation detector
NL1003390C2 (nl) * 1996-06-21 1997-12-23 Univ Delft Tech Vlakke stralingssensor en werkwijze voor haar vervaardiging.
US5942771A (en) * 1997-04-14 1999-08-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector
JP2005523438A (ja) * 2002-04-18 2005-08-04 フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング 両接触表面に微細構造を有する位置感応型ゲルマニウム検出器
JP4894921B2 (ja) * 2007-05-24 2012-03-14 コニカミノルタホールディングス株式会社 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Also Published As

Publication number Publication date
JPH0550857B2 (enrdf_load_html_response) 1993-07-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees