JPS61196571A - アモルフアスシリコンｘ線センサ - Google Patents

アモルフアスシリコンｘ線センサ

Info

Publication number
JPS61196571A
JPS61196571A JP60036198A JP3619885A JPS61196571A JP S61196571 A JPS61196571 A JP S61196571A JP 60036198 A JP60036198 A JP 60036198A JP 3619885 A JP3619885 A JP 3619885A JP S61196571 A JPS61196571 A JP S61196571A
Authority
JP
Japan
Prior art keywords
amorphous silicon
type
semiconductor
transparent conductive
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60036198A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476509B2 (cg-RX-API-DMAC7.html
Inventor
Hidehiko Maehata
英彦 前畑
Hiroshi Kamata
釜田　浩
Hiroyuki Daiku
博之 大工
Masahiko Yamamoto
昌彦 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanadevia Corp
Original Assignee
Hitachi Zosen Corp
Hitachi Shipbuilding and Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Zosen Corp, Hitachi Shipbuilding and Engineering Co Ltd filed Critical Hitachi Zosen Corp
Priority to JP60036198A priority Critical patent/JPS61196571A/ja
Publication of JPS61196571A publication Critical patent/JPS61196571A/ja
Publication of JPH0476509B2 publication Critical patent/JPH0476509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
    • G01T1/362—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP60036198A 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ Granted JPS61196571A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60036198A JPS61196571A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60036198A JPS61196571A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Publications (2)

Publication Number Publication Date
JPS61196571A true JPS61196571A (ja) 1986-08-30
JPH0476509B2 JPH0476509B2 (cg-RX-API-DMAC7.html) 1992-12-03

Family

ID=12463031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60036198A Granted JPS61196571A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Country Status (1)

Country Link
JP (1) JPS61196571A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291036A (en) * 1989-12-28 1994-03-01 Minnesota Mining And Manufacturing Company Amorphous silicon sensor
US5420452A (en) * 1990-02-09 1995-05-30 Minnesota Mining And Manufacturing Company Solid state radiation detector
WO2004027874A1 (en) * 2002-08-30 2004-04-01 Sharp Kabushiki Kaisha Photoelectric conversion apparatus and manufacturing method of same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291036A (en) * 1989-12-28 1994-03-01 Minnesota Mining And Manufacturing Company Amorphous silicon sensor
US5420452A (en) * 1990-02-09 1995-05-30 Minnesota Mining And Manufacturing Company Solid state radiation detector
WO2004027874A1 (en) * 2002-08-30 2004-04-01 Sharp Kabushiki Kaisha Photoelectric conversion apparatus and manufacturing method of same
US7211880B2 (en) 2002-08-30 2007-05-01 Sharp Kabushiki Kaisha Photoelectric conversion apparatus and manufacturing method of same
KR100759644B1 (ko) * 2002-08-30 2007-09-17 샤프 가부시키가이샤 광전 변환 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JPH0476509B2 (cg-RX-API-DMAC7.html) 1992-12-03

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