JPS61196545A - Bonding for pellet - Google Patents
Bonding for pelletInfo
- Publication number
- JPS61196545A JPS61196545A JP3838085A JP3838085A JPS61196545A JP S61196545 A JPS61196545 A JP S61196545A JP 3838085 A JP3838085 A JP 3838085A JP 3838085 A JP3838085 A JP 3838085A JP S61196545 A JPS61196545 A JP S61196545A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- plating layer
- gold plating
- longitudinal direction
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
Description
【発明の詳細な説明】
産業上皇且里分立
この発明は、共晶合金方式によるペレットボンディング
方法に係り、特に略長方形のペレットをダイボンディン
グする場合において被ダイボンディング部材との接合強
度を十分に得るためのペレットボンディング方法に関す
る。[Detailed Description of the Invention] This invention relates to a pellet bonding method using a eutectic alloy method, and particularly when die bonding approximately rectangular pellets, sufficient bonding strength with the die-bonded member is obtained. This invention relates to a pellet bonding method for.
丈米■且屯
近年、被ダイボンディング部材のボンディング面とペレ
ットとに共晶を生じさせる金メッキ層として、その取扱
の簡便な帯状の金テープが使用されてきている。従来で
は、前記金メッキ層を被着する位置が、ペレットの形状
に関係なく一様に指定されている。例えば、略長方形の
ペレットを被ダイボンディング部材にダイボンディング
する場合には、まず、前記ペレットの長手方向と前記金
メッキ層の長手方向とが直交するように、前記被ダイボ
ンディング部材のボンディング面に前記金メッキ層を被
着させ、その後、この金メッキ層に前記ペレットを押圧
しつつ所定方向にスクラブさせることにより、前記ペレ
ットを被ダイボンディング部材にグイボンディングさせ
ている。In recent years, a band-shaped gold tape that is easy to handle has been used as a gold plating layer that creates eutectic formation between the bonding surface of the die-bonded member and the pellet. Conventionally, the position at which the gold plating layer is applied is uniformly designated regardless of the shape of the pellet. For example, when die-bonding a substantially rectangular pellet to a member to be die-bonded, first, place the pellet on the bonding surface of the member to be die-bonded so that the longitudinal direction of the pellet is orthogonal to the longitudinal direction of the gold plating layer. A gold plating layer is applied, and then the pellets are scrubbed in a predetermined direction while being pressed against the gold plating layer, thereby firmly bonding the pellets to the member to be die bonded.
がンしようとする四 占
上述した従来の方式では、ペレットがボンディング面よ
りはみ出すような大きなスクラブストロ−りをとること
ができない関係上金メッキ層がペレットの長辺方向には
広がらず被ダイボンディング部材との接合面積が十分に
得られない。即ち、略長方形のペレットの場合には接合
強度の点において不安を残すこととなり、ひいては信頼
性および歩留りの低下を招来することとなる。In the conventional method described above, it is not possible to remove large scrub strokes that would cause the pellet to protrude beyond the bonding surface, and the gold plating layer does not spread in the long side direction of the pellet, resulting in damage to the die-bonded parts. Not enough bonding area can be obtained. In other words, in the case of approximately rectangular pellets, there remains a concern in terms of bonding strength, which in turn leads to a decrease in reliability and yield.
この発明は上記問題点に着目して創案されたもので、略
長方形のペレットと被ダイボンディング部材との接合強
度を十分に確保しうるペレットボンディング方法を提供
することを目的としている。The present invention was devised in view of the above-mentioned problems, and an object of the present invention is to provide a pellet bonding method that can ensure sufficient bonding strength between a substantially rectangular pellet and a member to be die-bonded.
占 ゛ るための
このためこの発明は、ダイボンディングすべきペレット
の長手方向と帯状の金メッキ層の長手方向とが平行とな
るように、被ダイボンディング部材のボンディング面の
幅方向中央位置に前記金メッキ層を被着するように指定
した。For this reason, the present invention provides the gold plating at the center position in the width direction of the bonding surface of the member to be die-bonded so that the longitudinal direction of the pellet to be die-bonded is parallel to the longitudinal direction of the strip-shaped gold plating layer. A layer was specified to be applied.
作且
即ち、帯状の金メッキ層は、スクラブを行うことによっ
てペレットの長手方向に広がる。In other words, the band-shaped gold plating layer is spread in the longitudinal direction of the pellet by scrubbing.
災立皿
以下、図面を参照してこの発明の一実施例を詳細に説明
する。この発明の方法を実施するためのダイボンディン
グ装置の概略を第２図に示す。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. FIG. 2 schematically shows a die bonding apparatus for carrying out the method of the present invention.
同図において、グイボンディング装置４０は、被ダイボ
ンディング部材１０を平面支持すると共に、図外の振動
機にて矢印への如く運動する可動ヒータブロック４１と
、下端面の凹部４２１にてペレット２０を吸着支持する
と共に、図外の振動機にて矢印Ｂの如く運動するコレッ
ト４２とを具備している。In the figure, the die bonding device 40 supports the die bonding target member 10 in a plane, and also includes a movable heater block 41 that moves in the direction of the arrow using a vibrator (not shown), and a pellet 20 in a recess 421 on the lower end surface. It is equipped with a collet 42 which is supported by suction and moves as shown by arrow B by a vibrator not shown.
上記構成のグイボンディング装置４０にてこの実施例の
ペレットボンディング方法を説明する。The pellet bonding method of this embodiment will be explained using the Gui bonding apparatus 40 having the above configuration.
まず、例えばＣｕ等のリードフレームからなる被ダイボ
ンディング部材１０のボンディング面１１（例えば略長
方形のアイランド）の表面上に、予め所定寸法にカット
された帯状の金テープからなる金メッキ層３０を、その
長手方向と前記ペレット２０の長手方向とが平行となる
ような位置に且つ前記ボンディング面１１の幅方向中央
位置に被着させる（第１図参照）。次に、前記被ダイボ
ンディング部材１０を可動ヒータブロック４１の上面に
載せ、図示しないヒータにて所定温度（４００〜５００
℃）になるまで加熱する。その後、位置決めされたベレ
ッ１−２０をコレット４２の凹部４２１に真空吸着して
支持させ、これを前記ボンディング面１１の上方に位置
させるように搬送する。その後、前記ペレット２０を金
メッキ層３０に押圧させると共に、前記金メッキ層３０
の長手方向と直交する方向（第１図矢印ＣＳＤ方向）に
前記ペレット２０をスクラブさせることにより、金メッ
キ層３０が３０ａに示すように楕円状にペレット２０の
長手方向に広がることとなる。First, on the surface of the bonding surface 11 (for example, a substantially rectangular island) of the die-bonding member 10 made of a lead frame such as Cu, a gold plating layer 30 made of a band-shaped gold tape cut in advance to a predetermined size is applied. It is attached at a position where the longitudinal direction and the longitudinal direction of the pellet 20 are parallel to each other and at the center position in the width direction of the bonding surface 11 (see FIG. 1). Next, the die bonding target member 10 is placed on the upper surface of the movable heater block 41, and heated to a predetermined temperature (400 to 500
℃). Thereafter, the positioned bellet 1-20 is vacuum-adsorbed and supported by the recess 421 of the collet 42, and is transported so as to be positioned above the bonding surface 11. Thereafter, the pellet 20 is pressed against the gold plating layer 30, and the gold plating layer 30 is pressed against the gold plating layer 30.
By scrubbing the pellet 20 in a direction perpendicular to the longitudinal direction (direction of arrow CSD in FIG. 1), the gold plating layer 30 spreads in an elliptical shape in the longitudinal direction of the pellet 20, as shown at 30a.
なお、上記実施例において、前記スクラブを行う方向は
金メッキ層３０の長手方向と平行な方向でも構わない。In the above embodiment, the scrubbing direction may be parallel to the longitudinal direction of the gold plating layer 30.
更に、この発明の方法は上記ダイボンディング装置４０
以外でも実施できることは言うまでもない。Furthermore, the method of the present invention includes the die bonding apparatus 40.
Needless to say, it can be carried out elsewhere.
ｍυ九果
以上詳説したようにこの発明によれば、金メッキ層がペ
レットの長手方向に広がるから、被ダイボンディング部
材と前記ペレットとの接合面積が従来と比較して大幅に
増大する。従って、前記両者の接合強度を十分に確保し
うるから、信頼性および歩留りの向上を図ることができ
る。As described in detail above, according to the present invention, since the gold plating layer spreads in the longitudinal direction of the pellet, the bonding area between the member to be die-bonded and the pellet is significantly increased compared to the conventional method. Therefore, since sufficient bonding strength between the two can be ensured, reliability and yield can be improved.
第１図はこの発明の詳細な説明するための説明図、第２
図はこの発明の方法を実施するグイボンディング装置の
概略を示す説明図である。
ｌＯ・・・被ダイボンディング部材、１１・・・ボンデ
ィング面、２０・・・ペレ・ノド、３０・・・金メッキ
層。FIG. 1 is an explanatory diagram for explaining the invention in detail, and FIG.
The figure is an explanatory diagram schematically showing a Gui bonding apparatus for carrying out the method of the present invention. lO... Member to be die-bonded, 11... Bonding surface, 20... Pere/nod, 30... Gold plating layer.
Claims (1)
状の金メッキ層を被着し、この金メッキ層にペレットを
押圧せしめて所定方向にスクラブさせることにより前記
ペレットを前記被ダイボンディング部材にダイボンディ
ングさせるペレットボンディング方法において、前記ペ
レットの長手方向と帯状の金メッキ層の長手方向とが平
行となるように、前記ボンディング面の幅方向中央位置
に前記金メッキ層を被着させることを特徴とするペレッ
トボンディング方法。(1) A pellet in which a band-shaped gold plating layer is deposited on the bonding surface of the die-bonding member, and the pellet is die-bonded to the die-bonding member by pressing the pellet against the gold-plating layer and scrubbing it in a predetermined direction. A pellet bonding method characterized in that the gold plating layer is deposited at the center position in the width direction of the bonding surface so that the longitudinal direction of the pellet and the longitudinal direction of the band-shaped gold plating layer are parallel to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3838085A JPS61196545A (en) | 1985-02-26 | 1985-02-26 | Bonding for pellet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3838085A JPS61196545A (en) | 1985-02-26 | 1985-02-26 | Bonding for pellet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61196545A true JPS61196545A (en) | 1986-08-30 |
| JPH0578936B2 JPH0578936B2 (en) | 1993-10-29 |
Family
ID=12523666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3838085A Granted JPS61196545A (en) | 1985-02-26 | 1985-02-26 | Bonding for pellet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61196545A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019016658A (en) * | 2017-07-05 | 2019-01-31 | 三菱電機株式会社 | Optical module and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138242A (en) * | 1979-04-13 | 1980-10-28 | Toshiba Corp | Die bonding |
| JPS59113629A (en) * | 1982-12-20 | 1984-06-30 | Fujitsu Ltd | Semiconductor device |
-
1985
- 1985-02-26 JP JP3838085A patent/JPS61196545A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138242A (en) * | 1979-04-13 | 1980-10-28 | Toshiba Corp | Die bonding |
| JPS59113629A (en) * | 1982-12-20 | 1984-06-30 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019016658A (en) * | 2017-07-05 | 2019-01-31 | 三菱電機株式会社 | Optical module and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0578936B2 (en) | 1993-10-29 |
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