JPS61193471A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61193471A JPS61193471A JP3270285A JP3270285A JPS61193471A JP S61193471 A JPS61193471 A JP S61193471A JP 3270285 A JP3270285 A JP 3270285A JP 3270285 A JP3270285 A JP 3270285A JP S61193471 A JPS61193471 A JP S61193471A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- heat sink
- case
- hollow partitions
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体装置に係り、特に充填樹脂の熱収縮に伴
う半導体装置の変形防止構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor device, and more particularly to a structure for preventing deformation of a semiconductor device due to thermal contraction of a filled resin.
第２図に示す従来の半導体装置（特開昭５９−８４４５
８号公報参照）はヒートシンク１上に絶縁板２を介して
半導体素子３を搭載しケース４をかぶせ半導体素子３周
辺に弾性率の小さいレジン５を充填しさらに封止用とし
てエポキシ等の強固なレジン６ｆｆ：充填硬化させた構
成となっている。７ぼケース４の蓋であり、半導体素子
３のリードの位置決め用孔７ａｖジン５．６の注入ロア
ｂを有している。尚、９はヒートシンク１とケース４の
接合部から水分が浸入することを防ぐために絶縁板２周
辺に充填硬化された強固なレジンである。The conventional semiconductor device shown in FIG.
(Refer to Publication No. 8), a semiconductor element 3 is mounted on a heat sink 1 through an insulating plate 2, a case 4 is placed over the semiconductor element 3, a resin 5 having a small elastic modulus is filled around the semiconductor element 3, and a strong material such as epoxy is used for sealing. Resin 6ff: Filled and hardened. 7 is a lid of the case 4, and has an injection lower b of a hole 7av and gin 5.6 for positioning the leads of the semiconductor element 3. Note that 9 is a strong resin that is filled and hardened around the insulating plate 2 in order to prevent moisture from entering from the joint between the heat sink 1 and the case 4.
レジン硬化後冷却すると強固なレジン６の熱収縮力がケ
ース４、リード８を介してヒートシンク１に伝わり、ヒ
ートシンク１が変形し、実用に供することができないと
いう欠点があった。これにヒートシンク１より強固なレ
ジン６の熱膨張係数が一般にに金属性ヒートシンク１の
２二５倍と大きａために発生するものである。When the resin is cooled after curing, the heat shrinkage force of the strong resin 6 is transmitted to the heat sink 1 via the case 4 and the leads 8, causing the heat sink 1 to deform, resulting in a disadvantage that it cannot be put to practical use. This occurs because the thermal expansion coefficient of the resin 6, which is stronger than the heat sink 1, is generally 225 times larger than that of the metal heat sink 1.
本発明の目的ぽ、前記しｆ（レジン６の熱収縮力により
ヒートシンク１が変形するという問題を除去した半導体
装置を提供するにある。It is an object of the present invention to provide a semiconductor device which eliminates the problem of the heat sink 1 being deformed due to the thermal contraction force of the resin 6.
上記目的を達成する本発明の特徴とするところは、封Ｉ
Ｆ用の強固なレジン中にレジンを分断し、該レジンの熱
膨張を吸収する中空仕切壁を設けたことにある。The features of the present invention that achieve the above object are as follows:
The reason is that a hollow partition wall is provided to divide the resin into a strong resin for F and absorb the thermal expansion of the resin.
第１図に示した一実施例に基いて、本発明を説明する。 The present invention will be explained based on an embodiment shown in FIG.
鋼材から成るヒートシンク１上にセラミック絶縁板２を
介して半導体素子３を搭載し、第３図に示すごとく、２
ケ所にＵ字形の中空仕切壁１０を一体成形で設けたレジ
ンケース４をヒートシンク１上に配置し、ケース蓋７を
孔７ａにり一ド８を通しながらかぶせ各々接着剤で接着
し、強固なレジン９を絶縁板２の周囲に充填し硬化させ
てから、弾性率の小さいシリコンレジン５を中空仕切壁
１０に十分達するまで注入し硬化させ、その後エポキシ
レジン６を別々に設けた注入孔７ｂから注入し硬化させ
た。本半導体装置は冷却後も全くヒートシンク１、ケー
ス４の変形は認められなかった。A semiconductor element 3 is mounted on a heat sink 1 made of steel through a ceramic insulating plate 2, and as shown in FIG.
A resin case 4 with integrally molded U-shaped hollow partition walls 10 is placed on the heat sink 1, and the case lid 7 is placed over the heat sink 1 while passing the hole 8 through the hole 7a, and each is adhered with adhesive to make it strong. After the resin 9 is filled around the insulating plate 2 and cured, the silicone resin 5 having a small elastic modulus is injected and cured until it fully reaches the hollow partition wall 10, and then the epoxy resin 6 is poured from the separately provided injection hole 7b. Injected and cured. In this semiconductor device, no deformation of the heat sink 1 or the case 4 was observed even after cooling.
その理由は、中空仕切壁１０を設けたため、レジン６が
３分割され、かつ、熱収縮力が中空仕切壁１０の弾力性
で吸収されるためである。The reason for this is that since the hollow partition wall 10 is provided, the resin 6 is divided into three parts, and the heat shrinkage force is absorbed by the elasticity of the hollow partition wall 10.
レジン６と蓋７の界面に水分が浸入しても、中空仕切壁
１０の中空部ｔＯａに水分がためられ、半導体素子３に
至らない確率が高く、このため、本装置の耐湿性に高い
。Even if moisture intrudes into the interface between the resin 6 and the lid 7, there is a high probability that the moisture will accumulate in the hollow part tOa of the hollow partition wall 10 and will not reach the semiconductor element 3. Therefore, the moisture resistance of this device is high.
第１図、第３図に示した実施例に、ケース４０幅方向に
２個の中空仕切壁を設けているが、個数ば、レジン６の
熱収縮量によって決まるものであり、２個に制限される
もので汀ない。また、ケース４の技手方向に沿った中空
仕切壁を設けても良い。中空仕切壁全溝酸する材料げ注
入硬化されるレジン６とよく接着するものが良い。中空
仕切壁の形状ＨＵ字状に限定されるものではなく、コ字
状、７字状でも何でもよい。In the embodiment shown in FIGS. 1 and 3, two hollow partition walls are provided in the width direction of the case 40, but the number is determined by the amount of heat shrinkage of the resin 6, and is limited to two. Don't settle for anything. Further, a hollow partition wall may be provided along the direction of the technique of the case 4. It is preferable that the hollow partition wall is made of a material that is oxidized throughout the grooves and that adheres well to the resin 6 that is injected and hardened. The shape of the hollow partition wall is not limited to the HU-shape, but may be any U-shape, 7-shape, or any other shape.
実施例でにケース４に蓋７を設けているが、これに省略
しても良い。その場合、中空仕切壁１０内にレジン６が
注入硬化されていなければ良い。Although the lid 7 is provided on the case 4 in the embodiment, it may be omitted. In that case, it is sufficient that the resin 6 is not injected into the hollow partition wall 10 and hardened.
半導体素子３は絶縁板２を介さず、ヒートシンク１に直
接あるいに、電極板を介して搭載されていてもよいし、
半導体素子以外の回路素子が固定されて、所定の回路が
絶縁板上に形成されていてもよい。The semiconductor element 3 may be mounted directly on the heat sink 1 without using the insulating plate 2, or via an electrode plate,
A predetermined circuit may be formed on the insulating plate by fixing circuit elements other than semiconductor elements.
本発明によれば、ヒートシンクの変形等不具合を除去し
た半導体装置を得ることができる。According to the present invention, it is possible to obtain a semiconductor device in which defects such as deformation of the heat sink are eliminated.
ｖＪ１図に本発明の一実施例を示す半導体装置の縦断面
図、第２図は従来の半導体装置の縦断面図、第３図ぼ第
１図に示した半導体装置に用いられるケースの斜視図で
ある。
１・・・ヒートシンク、２・・・絶縁板、３・・・半導
体素子、４・・・ケース、５，６．９・・・レジン、７
・・・蓋、８・・・リード、１０・・・中空仕切壁。Figure vJ1 is a vertical sectional view of a semiconductor device showing an embodiment of the present invention, Figure 2 is a vertical sectional view of a conventional semiconductor device, and Figure 3 is a perspective view of a case used in the semiconductor device shown in Figure 1. It is. DESCRIPTION OF SYMBOLS 1... Heat sink, 2... Insulating board, 3... Semiconductor element, 4... Case, 5,6.9... Resin, 7
... Lid, 8... Lead, 10... Hollow partition wall.
Claims (1)
子、これを覆うように注入硬化された低弾性率のレジン
、その上部を訂正するため注入硬化された強固なレジン
を有する半導体装置において、強固なレジン内に該レジ
ンを分断し、かつ、その硬化時熱収縮を吸収する中空仕
切壁が設けられていることを特徴とする半導体装置。 ２、特許請求の範囲第１項において、中空仕切壁はケー
スと一体化していることを特徴とする半導体装置。 ３、特許請求の範囲第１項において、中空仕切壁はＵ字
状であり、低弾性率のレジンに接していることを特徴と
する半導体装置。[Claims] 1. A semiconductor element mounted in a case on the heat sink 5, a resin with a low elastic modulus that is injection-hardened to cover it, and a strong resin that is injection-hardened to correct the upper part of the semiconductor element. 1. A semiconductor device comprising: a hollow partition wall provided in a strong resin to divide the resin and absorb heat shrinkage during curing thereof. 2. The semiconductor device according to claim 1, wherein the hollow partition wall is integrated with the case. 3. The semiconductor device according to claim 1, wherein the hollow partition wall is U-shaped and in contact with a resin having a low elastic modulus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3270285A JPS61193471A (en) | 1985-02-22 | 1985-02-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3270285A JPS61193471A (en) | 1985-02-22 | 1985-02-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61193471A true JPS61193471A (en) | 1986-08-27 |
| JPH0351299B2 JPH0351299B2 (en) | 1991-08-06 |
Family
ID=12366179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3270285A Granted JPS61193471A (en) | 1985-02-22 | 1985-02-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61193471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0718886A1 (en) * | 1994-12-24 | 1996-06-26 | IXYS Semiconductor GmbH | Semiconductor power module |
| DE10340328A1 (en) * | 2003-08-29 | 2005-03-24 | Endress + Hauser Gmbh + Co. Kg | Sealing chill for a printed-board assembly has a wall structure to limit chill volume in a three-dimensional direction and in directions vertical to that |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136953A (en) * | 1983-01-25 | 1984-08-06 | Fuji Electric Co Ltd | Composite element |
-
1985
- 1985-02-22 JP JP3270285A patent/JPS61193471A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136953A (en) * | 1983-01-25 | 1984-08-06 | Fuji Electric Co Ltd | Composite element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0718886A1 (en) * | 1994-12-24 | 1996-06-26 | IXYS Semiconductor GmbH | Semiconductor power module |
| DE10340328A1 (en) * | 2003-08-29 | 2005-03-24 | Endress + Hauser Gmbh + Co. Kg | Sealing chill for a printed-board assembly has a wall structure to limit chill volume in a three-dimensional direction and in directions vertical to that |
| US7566836B2 (en) | 2003-08-29 | 2009-07-28 | Endress + Hauser Gmbh +Co. Kg | Potting shell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351299B2 (en) | 1991-08-06 |
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