JPS61193461A - Wide bonding method - Google Patents

Wide bonding method

Info

Publication number
JPS61193461A
JPS61193461A JP60032757A JP3275785A JPS61193461A JP S61193461 A JPS61193461 A JP S61193461A JP 60032757 A JP60032757 A JP 60032757A JP 3275785 A JP3275785 A JP 3275785A JP S61193461 A JPS61193461 A JP S61193461A
Authority
JP
Japan
Prior art keywords
wire
bonding
pressure welding
boehmite
cold pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60032757A
Other languages
Japanese (ja)
Inventor
Masayoshi Yamaguchi
政義 山口
Mutsumi Suematsu
睦 末松
Toshio Yamamoto
俊夫 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60032757A priority Critical patent/JPS61193461A/en
Publication of JPS61193461A publication Critical patent/JPS61193461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Abstract

PURPOSE:To accomplish bonding that allows wire coated with insulator to be safe from heat during the processing of semiconductor by a method wherein bonding is accomplished by cold pressure welding. CONSTITUTION:This is a process wherein wire with its surface coated with insulator is subjected to cold bonding. Such wire is first subjected to anodization whereby a corrosion-resisting oxide film is formed on its surface. The surface of an aliminum wire turns into porous gamma-Al2O3 after electrolysis in an electrolyte. The porous surface is exposed to boiling water and then superheated steam for sealing, which results in the formation of a boehmite coating. The boehmite-coated aluminum wire is guided through a capillary to land on a bonding spot where it is placed under pressure strong enough for cold pressure welding. The boehmite coating skin is destroyed during the cold pressure welding process for the exposure of fresh aluminum surfaces capable of strong bondage with each other under pressure. The capillary-housed boehmite-coated aluminum wire is then guided to another bonding spot for the next cold pressure welding process.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はワイヤボンディング方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a wire bonding method.

〔発明の技術的背景およびその問題点〕ワイヤボンディ
ングは周知の通り半導体素子のボンディングパッドと他
のボンディングパッド間をワイヤ接続するものもする。[Technical Background of the Invention and Problems Therewith] As is well known, wire bonding also connects a bonding pad of a semiconductor element with another bonding pad by wire.

近年、ワイヤボンディングは全自動ワイヤボンディング
装置の発達に伴ない高速化が要求され、リードフレーム
とＩＣチップ間のワイヤボンディング印刷回路基板とＩ
Ｃチップ間のワイヤボンディングが行なわれている。こ
れらのワイヤボンディングに用いるワイヤは被覆のない
金線が実用されている。しかしながら、高速化が要望さ
れるＫつれて、ボンディングされたワイヤがたわんだり
、そのたわみにより他の回路に接触したりするなどの問
題があった□。In recent years, wire bonding is required to be faster with the development of fully automatic wire bonding equipment, and wire bonding between lead frames and IC chips, printed circuit boards, and
Wire bonding between C chips is performed. The wire used for these wire bondings is a gold wire without a coating. However, as higher speeds are desired, there have been problems such as the bonded wires bending and coming into contact with other circuits due to the bending.

特にワイヤボンディング後モールドすると、この接触に
よるシ曹−トの不良が多くなる問題があった。この問題
を解決する手染として被覆ワイヤを用いることが特開昭
５８−３２３９号、特開昭５９−１５４０５４号で提案
されている。Particularly, when molding is performed after wire bonding, there is a problem in that the contact causes many defects in the sheet. To solve this problem, the use of coated wire for hand dyeing has been proposed in JP-A-58-3239 and JP-A-59-154,054.

しかしながら、これらの手段はワイヤの被覆材にポリエ
チレン、ポリエステル、ポリプロピレンポリイミドなど
の電気絶縁性の被覆を用いているため、ワイ（ヤボンデ
ィング後の加熱１穆例えばモ　　　゛−ルド工程により
被覆が溶融して絶縁破壊されるなどの問題があった。However, since these methods use an electrically insulating coating such as polyethylene, polyester, or polypropylene polyimide as the coating material for the wire, the coating may melt during heating after wire bonding, for example, during the molding process. There were problems such as dielectric breakdown.

〔発明の目的〕[Purpose of the invention]

ざ− この発明は上記点に対処してなＹれたもので、半導体工
程における熱に対しても安定な絶縁被覆ワイヤを用いた
ワイヤボンディング方法を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in response to the above-mentioned problems, and provides a wire bonding method using an insulated wire that is stable against heat in semiconductor processes.

〔発明の概要〕[Summary of the invention]

この発明は絶縁性物質で被覆されたワイヤを用いた半導
体素子のワイヤボンディングを冷間圧接によシボンディ
ングすることを特徴とするワイヤボンディング方法を提
供するものである。The present invention provides a wire bonding method characterized in that wire bonding of a semiconductor element using a wire coated with an insulating material is performed by cold pressure welding.

〔発明の実施例〕[Embodiments of the invention]

次に本発明方法をＡｌワイヤを用いたワイヤボンディン
グに適用した実施例を説明する、ワイヤボンディング装
置は当業者において周知であるからその詳細を省略する
。ボンディングワイヤとして表面絶縁性のワイヤを用い
る。このワイヤは例えばアルミニウムワイヤの表面を陽
極酸化して耐食性酸化皮膜を形成する。この酸化皮膜は
アルマイイト（Ａ１２０３）である。この酸化皮膜は、
電解液として例えばシュウ酸、硫酸、クロム酸水溶液系
などのいずれかを用いることができる。この電解液によ
り電解したアルミニウムワイヤ表面は多孔性のγ−Ａ１
２０３で、これを沸騰水処理、過熱蒸気処理を行うこと
により封孔され、γ−Ｍ２０３・Ｈ２Ｏ（ベーマイト）
皮膜を形成することができる。このベーマイト皮膜は耐
食性、絶縁性がきわめて良好で皮膜に染色することもで
きる。このように表面にベーマイト皮膜が形成されたワ
イヤをボンディングワイヤとして用い、ワイヤボンディ
ングを行う。Next, an example in which the method of the present invention is applied to wire bonding using Al wire will be described. Since the wire bonding apparatus is well known to those skilled in the art, the details thereof will be omitted. A wire with surface insulation is used as the bonding wire. This wire is made by, for example, anodizing the surface of an aluminum wire to form a corrosion-resistant oxide film. This oxide film is alumite (A1203). This oxide film is
As the electrolytic solution, for example, any one of oxalic acid, sulfuric acid, chromic acid aqueous solution, etc. can be used. The surface of the aluminum wire electrolyzed with this electrolyte becomes porous γ-A1.
203, it is sealed by boiling water treatment and superheated steam treatment, and γ-M203・H2O (boehmite)
A film can be formed. This boehmite film has extremely good corrosion resistance and insulation properties, and can also be dyed. Wire bonding is performed using the wire with the boehmite film formed on its surface as a bonding wire.

ワイヤボンディングは冷間圧接にて行う。即ち、キャピ
ラリーにより案内されたベーマイト皮膜アルミニウムワ
イヤは冷間圧接に必要な圧力でボンディング部例えば・
・イブリッド印刷基板の所定位置上にマウントされた半
導体ベレットのボンディングパッド例えばアルミニウム
パッド上に冷間圧接する。冷間圧接時表面のベーマイト
皮膜が破れて、アルミニウム新生面が互いに接触するこ
とにより、新生面どうしによる強固なアルミニウム同志
の圧接が行なわれる。Wire bonding is done by cold pressure welding. That is, the boehmite-coated aluminum wire guided by the capillary is bonded at the pressure necessary for cold welding, for example.
- Cold pressure bonding onto a bonding pad, for example an aluminum pad, of a semiconductor pellet mounted on a predetermined position of an hybrid printed circuit board. During cold pressure welding, the boehmite film on the surface is torn and the new surfaces of the aluminum come into contact with each other, resulting in strong aluminum-to-aluminum pressure bonding between the new surfaces.

しかるのち、上記キャピラリによシベーマイト皮膜アル
ミニウムワイヤは案内され、次のボンディング位置にボ
ンディングする。例えば上記印刷回路基板に設けられた
アルミニウムによるボンディングパッドに冷間圧接する
っこれで２点間の冷間圧接によるワイヤボンディングが
完了する。この冷間圧接の雰囲気は不活性ガス又は窒素
ガス雰囲気にすると酸化防止の効果がある。この不活性
又は窒素ガスの雰囲気はボンディング面をボンディング
憤射又は気流を作ることＫより形成できる。Thereafter, the siboehmite-coated aluminum wire is guided through the capillary and bonded to the next bonding position. For example, by cold pressure bonding to an aluminum bonding pad provided on the printed circuit board, wire bonding by cold pressure bonding between two points is completed. When the atmosphere for this cold pressure welding is an inert gas or nitrogen gas atmosphere, it is effective to prevent oxidation. This inert or nitrogen gas atmosphere can be created by bombarding the bonding surfaces or by creating an air flow.

−ドなどの厚さ４＋１囮のもののワイヤボンディングに
よる実装に用いることができる効果がある。The present invention has the advantage that it can be used for mounting by wire bonding a 4+1 thickness decoy such as a board.

上記実施例ではアルミニウムワイヤについて説明したが
、冷間圧接が可能な絶縁皮膜ワイヤであれば何れでも適
用できることは説明するまでもないことである。Although the above embodiments have been described using aluminum wires, it goes without saying that any wire with an insulating coating that can be cold-welded can be applied.

前述のように圧接によってワイヤとボンディングパッド
とを接続する方法であるが、この原理はワイヤ表面およ
びパッド表面の絶縁皮膜層を機械的な加圧力で破壊して
新生面を発生させて容易に金属結合を生じさせるもので
ある。As mentioned above, the wire and bonding pad are connected by pressure welding, and the principle behind this is that the insulating film layer on the wire and pad surfaces is destroyed by mechanical pressure to generate a new surface, which facilitates metal bonding. It is something that causes

なお、アルミニウムワイヤ以外においてもＡｕワイヤ、
Ｃｕワイヤ、Ａｇワイヤを用いても、表面絶縁皮膜層を
形成させれば同様の効果がえられる。In addition to aluminum wire, Au wire,
Even if Cu wire or Ag wire is used, the same effect can be obtained if a surface insulating film layer is formed.

Claims (3)

【特許請求の範囲】[Claims] （１）絶縁性物質で被覆されたワイヤを用いた半導体素
子のワイヤボンディングを冷間圧接によりボンディング
することを特徴とするワイヤボンディング方法。(1) A wire bonding method characterized in that wire bonding of a semiconductor element using a wire coated with an insulating substance is performed by cold pressure welding. （２）ワイヤの絶縁被覆材は冷間圧接時に破壊されワイ
ヤとボンディングパッドとの接合がなされることを特徴
とする特許請求の範囲第１項記載のワイヤボンディング
方法。(2) The wire bonding method according to claim 1, wherein the insulating coating material of the wire is destroyed during cold pressure welding to join the wire and the bonding pad. （３）表面が陽極酸化されたワイヤを用いてボンディン
グ部に冷間圧接してボンディングすることを特徴とする
特許請求の範囲第１項記載のワイヤボンディング方法。(3) The wire bonding method according to claim 1, characterized in that bonding is performed by cold pressure welding to the bonding part using a wire whose surface is anodized.
JP60032757A 1985-02-22 1985-02-22 Wide bonding method Pending JPS61193461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60032757A JPS61193461A (en) 1985-02-22 1985-02-22 Wide bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60032757A JPS61193461A (en) 1985-02-22 1985-02-22 Wide bonding method

Publications (1)

Publication Number Publication Date
JPS61193461A true JPS61193461A (en) 1986-08-27

Family

ID=12367709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60032757A Pending JPS61193461A (en) 1985-02-22 1985-02-22 Wide bonding method

Country Status (1)

Country Link
JP (1) JPS61193461A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318132A (en) * 1987-06-19 1988-12-27 Hitachi Ltd Semiconductor device and bonding method and device for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318132A (en) * 1987-06-19 1988-12-27 Hitachi Ltd Semiconductor device and bonding method and device for manufacturing same

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