JPS61186291A - Production of compound semiconductor single crystal - Google Patents
Production of compound semiconductor single crystalInfo
- Publication number
- JPS61186291A JPS61186291A JP60023572A JP2357285A JPS61186291A JP S61186291 A JPS61186291 A JP S61186291A JP 60023572 A JP60023572 A JP 60023572A JP 2357285 A JP2357285 A JP 2357285A JP S61186291 A JPS61186291 A JP S61186291A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- compound semiconductor
- partition wall
- semiconductor single
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＧａＡｅ 、 ＧａＰ 、 工ｎＰ
などの■−Ｖ族化合物半導体単結晶、及び０ｄＴｅ 、
Ｚｎ５ｅなどのＩＩ−Ｍ族化合物半導体単結晶の製
造方法に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to GaAe, GaP,
■-V group compound semiconductor single crystals such as, and 0dTe,
The present invention relates to a method for manufacturing a single crystal of a II-M compound semiconductor such as Zn5e.
多くの化合物半導体には、揮発性の高い成分が含まれて
いるため、引上げ法にょシ単結晶を育成する場合には、
Ｂ２Ｏ３などの液体封止剤を用いてその成分の揮散を防
ぐ方法（Ｌ１！＋Ｏ法）が用いられる。また、化合物半
導体の高品質化には、転位密度を低減させることが必要
であるが、そのためには、単結晶育成中の温度環境を安
定化することが必要となる。従来技術としては、中西外
、゛封止剤中育成法による無転位ＧａＡ３単結晶の育成
”第３１回応用物理学関係連合講演会講演予稿集３１ｐ
−Ｄ−１１（１９８４）ｐ６２６、に提案されているよ
うに、Ｌｌ［ｉＯ法においてＢ、Ｏｓ 厚を８０−と厚
くすることにより、温度勾配を３５℃／３と小さくする
という方法がある。Many compound semiconductors contain highly volatile components, so when growing single crystals using the pulling method,
A method (L1!+O method) is used in which a liquid sealant such as B2O3 is used to prevent the components from volatilizing. Furthermore, in order to improve the quality of compound semiconductors, it is necessary to reduce the dislocation density, and for this purpose, it is necessary to stabilize the temperature environment during single crystal growth. As for the conventional technology, Gai Nakanishi, ``Growing dislocation-free GaA3 single crystal by growth method in encapsulant'', 31st Applied Physics Association Lecture Proceedings, p. 31
-D-11 (1984) p626, there is a method of reducing the temperature gradient to 35°C/3 by increasing the B, Os thickness to 80- in the Ll[iO method.
しかしながら上記の従来方法では、厚くした液体封止剤
の対流が抑えられないために、温度のゆらぎを十分に少
さくしきれないという問題があった。However, the conventional method described above has a problem in that temperature fluctuations cannot be sufficiently reduced because convection of the thickened liquid sealant cannot be suppressed.
そこで本発明の目的はこの問題の解決、すなわち厚くし
た液体封止剤の対流を防止して、温度環境を安定化する
ことにより転位密度を低減して高品質な化合物半導体単
結晶を製造できる方法を提供することにある。Therefore, the purpose of the present invention is to solve this problem, that is, to prevent convection of a thickened liquid encapsulant and stabilize the temperature environment, thereby reducing dislocation density and producing a high-quality compound semiconductor single crystal. Our goal is to provide the following.
本発明は揮発性物質を含む化合物半導体の単結晶製造方
法で、液体封止剤により育成中の単結晶全体をおおい、
かつ、るつは内部に隔壁をもうけることを特徴とする化
合物半導体単結晶の製造方法である。The present invention is a method for producing a single crystal of a compound semiconductor containing a volatile substance, in which the entire single crystal being grown is covered with a liquid sealant,
Moreover, the method for manufacturing a compound semiconductor single crystal is characterized in that a partition wall is provided inside.
すなわち本発明はるつばの液体封止剤部分に隔壁を設け
ることにより、該液体封止剤の対流を抑制したものであ
る。That is, the present invention suppresses convection of the liquid sealant by providing a partition wall in the liquid sealant portion of the crucible.
以下図面を参照して本発明を具体的に説明する。The present invention will be specifically described below with reference to the drawings.
第１図は本発明の実施態様を示す図であって、基本構造
は通常のＬＥＯ法引上げ炉と同様である。すなわち、１
はるつぼ、２は原料融液、３は育成中の単結晶、４は液
体封止剤、５はヒーター、６は上軸、７は下軸、８はチ
ャンバーである。それらに加えて、液体封止剤対流防止
用の隔壁９が複数枚、るつは１内にもうけられている。FIG. 1 is a diagram showing an embodiment of the present invention, and the basic structure is the same as that of a normal LEO method pulling furnace. That is, 1
A crucible, 2 is a raw material melt, 3 is a single crystal being grown, 4 is a liquid sealant, 5 is a heater, 6 is an upper shaft, 7 is a lower shaft, and 8 is a chamber. In addition to these, a plurality of partition walls 9 for preventing liquid sealant convection are provided within the joint 1.
隔壁９の形状は、リング状の円板をガしておシ、中央部
の穴の直径は、引き上げる単結晶の外径よシも１０〜２
０目大きくしておく必要がある。また、隔壁間の間隔は
、８〜１２■程度とする。液体封止剤の厚さは８０〜１
２０■とし、隔壁は、７〜１０枚もうける。The shape of the partition wall 9 is a ring-shaped disk, and the diameter of the hole in the center is 10 to 2 mm larger than the outer diameter of the single crystal to be pulled.
It is necessary to make the 0 value larger. Further, the interval between the partition walls is about 8 to 12 squares. The thickness of the liquid sealant is 80-1
20cm, and make 7 to 10 partition walls.
本発明において隔壁に用いることのできる材料としては
、カーボン、ＰＢＮ、ＢＮ、７リコンナイトライド、ア
ルミナイドライド、カーボンやＢＮにＰ］３Ｎあるいは
ＢＮをコートしたもの、その他モリブデン等が挙げられ
る。Examples of materials that can be used for the partition walls in the present invention include carbon, PBN, BN, 7-licon nitride, aluminide, carbon or BN coated with P]3N or BN, and molybdenum.
以上の本発明の構成により化合物半導体単結晶を成長さ
せるには、通常のＬＥＯ法単結晶引上げ法と同じ操作・
手順によるが、液体封止剤４は溶融時にその厚さが８０
〜１２０露となるように、通常法に比べて大量にチャー
ジしなければならない。隔壁の穴の直径は引上げる単結
晶の外径よシラ０〜２０Ｉ＋Ｉ＋！大きく設定している
ので、育成中の単結晶とのすき間は５〜１０■となる。To grow a compound semiconductor single crystal using the above-described structure of the present invention, the same operations and procedures as the normal LEO single crystal pulling method are used.
Depending on the procedure, the liquid sealant 4 has a thickness of 80 mm when melted.
It is necessary to charge a large amount compared to the normal method, so that the amount is ~120 dew. The diameter of the hole in the partition wall is the outer diameter of the single crystal to be pulled, which is 0 to 20I+I+! Since it is set large, the gap between the single crystal and the growing single crystal is 5 to 10 square meters.
液体封止剤は、通常Ｂ２Ｏ３などのガラス状材質を用い
るため粘度が高く、例えばＢ！ ｏｓでは、８００℃で
約４２０ ｐｏｉｓｅ、１２００℃で約５０ ｐｏｉｓ
ｅである。グリセリンの２０℃での粘性率が１５．０
ｐｏｉｓｅであることを考えると、この値はかなシ高い
ことが分る。この場合、５〜１０−のすき間に対しては
、熱対流をほぼ完全に抑えることができ、一定の温度勾
配を持った安定な温度環境下で化合物半導体単結晶を引
き上げることができる。温度勾配は、Ｂ、０３ 厚８０
■に対して３１℃／儒という値を得ることができた。Liquid sealants usually have high viscosity because they use glassy materials such as B2O3, such as B! os, about 420 poise at 800℃, about 50 poise at 1200℃
It is e. The viscosity of glycerin at 20℃ is 15.0
Considering that it is a poise, it can be seen that this value is quite high. In this case, thermal convection can be almost completely suppressed for a gap of 5 to 10 −, and the compound semiconductor single crystal can be pulled up in a stable temperature environment with a constant temperature gradient. Temperature gradient is B, 03 thickness 80
For (2), we were able to obtain a value of 31°C/F.
本発明をＧａＡｓ単結晶製造に用いた。液体封止剤には
Ｂ２Ｏ３を用い、その厚さは、８０ｍとした。隔壁は８
ｗ間隔で７枚もうけた。チャンバー内はＮ、 ガスで
５０気圧に加圧し通常のＬＩＣ法の単結晶製造方法によ
り引上げを実施したが、転位の少ない良好な品質の単結
晶を得ることができた。The present invention was used to produce GaAs single crystals. B2O3 was used as the liquid sealant, and its thickness was 80 m. The bulkhead is 8
I made 7 pieces at w intervals. The inside of the chamber was pressurized to 50 atmospheres with N and gas, and pulling was carried out using the usual LIC single crystal manufacturing method, and a good quality single crystal with few dislocations could be obtained.
以上説明したように、るつは内に隔壁を設けることで単
結晶育成中の液体封止剤の温度勾配が小さくなシ、熱的
ゆらぎも小さくなるので、転位の発生が抑えられ、品質
のよい化合物半導体単結晶を製造することができるとい
う利点がある。As explained above, by providing partition walls inside the melt, the temperature gradient of the liquid encapsulant during single crystal growth is reduced, and thermal fluctuations are also reduced, suppressing the occurrence of dislocations and improving quality. There is an advantage that a good compound semiconductor single crystal can be manufactured.
第１図は本発明の化合物半導体単結晶の製造方法の１実
施態様を説明する図である。FIG. 1 is a diagram illustrating one embodiment of the method for manufacturing a compound semiconductor single crystal of the present invention.
Claims (1)
液体封止剤により育成中の単結晶全体をおおい、かつ、
るつぼ内部に隔壁をもうけることを特徴とする化合物半
導体単結晶の製造方法。A method for producing single crystals of compound semiconductors containing volatile substances,
Cover the entire growing single crystal with a liquid sealant, and
A method for producing a compound semiconductor single crystal, characterized by providing a partition wall inside a crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60023572A JPS61186291A (en) | 1985-02-12 | 1985-02-12 | Production of compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60023572A JPS61186291A (en) | 1985-02-12 | 1985-02-12 | Production of compound semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61186291A true JPS61186291A (en) | 1986-08-19 |
Family
ID=12114253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60023572A Pending JPS61186291A (en) | 1985-02-12 | 1985-02-12 | Production of compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61186291A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005016848A (en) * | 2003-06-26 | 2005-01-20 | Daikin Ind Ltd | Indoor unit for air-conditioner |
| WO2006012924A1 (en) * | 2004-08-05 | 2006-02-09 | Pusch, Bernard | Method of growing single crystals from melt |
-
1985
- 1985-02-12 JP JP60023572A patent/JPS61186291A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005016848A (en) * | 2003-06-26 | 2005-01-20 | Daikin Ind Ltd | Indoor unit for air-conditioner |
| WO2006012924A1 (en) * | 2004-08-05 | 2006-02-09 | Pusch, Bernard | Method of growing single crystals from melt |
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