JPS61183971U - - Google Patents

Info

Publication number
JPS61183971U
JPS61183971U JP6787785U JP6787785U JPS61183971U JP S61183971 U JPS61183971 U JP S61183971U JP 6787785 U JP6787785 U JP 6787785U JP 6787785 U JP6787785 U JP 6787785U JP S61183971 U JPS61183971 U JP S61183971U
Authority
JP
Japan
Prior art keywords
melt
single crystal
crucible
pulling
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6787785U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315550Y2 (es
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985067877U priority Critical patent/JPH0315550Y2/ja
Publication of JPS61183971U publication Critical patent/JPS61183971U/ja
Application granted granted Critical
Publication of JPH0315550Y2 publication Critical patent/JPH0315550Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1985067877U 1985-05-08 1985-05-08 Expired JPH0315550Y2 (es)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985067877U JPH0315550Y2 (es) 1985-05-08 1985-05-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985067877U JPH0315550Y2 (es) 1985-05-08 1985-05-08

Publications (2)

Publication Number Publication Date
JPS61183971U true JPS61183971U (es) 1986-11-17
JPH0315550Y2 JPH0315550Y2 (es) 1991-04-04

Family

ID=30602112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985067877U Expired JPH0315550Y2 (es) 1985-05-08 1985-05-08

Country Status (1)

Country Link
JP (1) JPH0315550Y2 (es)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法
JP2006506306A (ja) * 2002-11-12 2006-02-23 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶インゴットを成長させる方法及び結晶引上げ装置
JP2015526380A (ja) * 2013-06-21 2015-09-10 エルジー シルトロン インコーポレイテッド シリコン単結晶成長装置及びその成長方法
JP2018080097A (ja) * 2016-11-18 2018-05-24 住友金属鉱山株式会社 単結晶製造装置及び単結晶製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522329U (es) * 1978-07-31 1980-02-13
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522329U (es) * 1978-07-31 1980-02-13
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法
JP2006506306A (ja) * 2002-11-12 2006-02-23 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶インゴットを成長させる方法及び結晶引上げ装置
JP2015526380A (ja) * 2013-06-21 2015-09-10 エルジー シルトロン インコーポレイテッド シリコン単結晶成長装置及びその成長方法
JP2018080097A (ja) * 2016-11-18 2018-05-24 住友金属鉱山株式会社 単結晶製造装置及び単結晶製造方法

Also Published As

Publication number Publication date
JPH0315550Y2 (es) 1991-04-04

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