JPS61183971U - - Google Patents
Info
- Publication number
- JPS61183971U JPS61183971U JP6787785U JP6787785U JPS61183971U JP S61183971 U JPS61183971 U JP S61183971U JP 6787785 U JP6787785 U JP 6787785U JP 6787785 U JP6787785 U JP 6787785U JP S61183971 U JPS61183971 U JP S61183971U
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- crucible
- pulling
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985067877U JPH0315550Y2 (es) | 1985-05-08 | 1985-05-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985067877U JPH0315550Y2 (es) | 1985-05-08 | 1985-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61183971U true JPS61183971U (es) | 1986-11-17 |
JPH0315550Y2 JPH0315550Y2 (es) | 1991-04-04 |
Family
ID=30602112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985067877U Expired JPH0315550Y2 (es) | 1985-05-08 | 1985-05-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0315550Y2 (es) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183689A (ja) * | 1989-12-11 | 1991-08-09 | Mitsubishi Materials Corp | 単結晶引上装置および引上方法 |
JP2006506306A (ja) * | 2002-11-12 | 2006-02-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 単結晶インゴットを成長させる方法及び結晶引上げ装置 |
JP2015526380A (ja) * | 2013-06-21 | 2015-09-10 | エルジー シルトロン インコーポレイテッド | シリコン単結晶成長装置及びその成長方法 |
JP2018080097A (ja) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | 単結晶製造装置及び単結晶製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522329U (es) * | 1978-07-31 | 1980-02-13 | ||
JPS6027684A (ja) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | 単結晶製造装置 |
-
1985
- 1985-05-08 JP JP1985067877U patent/JPH0315550Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522329U (es) * | 1978-07-31 | 1980-02-13 | ||
JPS6027684A (ja) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | 単結晶製造装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183689A (ja) * | 1989-12-11 | 1991-08-09 | Mitsubishi Materials Corp | 単結晶引上装置および引上方法 |
JP2006506306A (ja) * | 2002-11-12 | 2006-02-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 単結晶インゴットを成長させる方法及び結晶引上げ装置 |
JP2015526380A (ja) * | 2013-06-21 | 2015-09-10 | エルジー シルトロン インコーポレイテッド | シリコン単結晶成長装置及びその成長方法 |
JP2018080097A (ja) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | 単結晶製造装置及び単結晶製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0315550Y2 (es) | 1991-04-04 |