JPS6118346B2 - - Google Patents
Info
- Publication number
- JPS6118346B2 JPS6118346B2 JP51016698A JP1669876A JPS6118346B2 JP S6118346 B2 JPS6118346 B2 JP S6118346B2 JP 51016698 A JP51016698 A JP 51016698A JP 1669876 A JP1669876 A JP 1669876A JP S6118346 B2 JPS6118346 B2 JP S6118346B2
- Authority
- JP
- Japan
- Prior art keywords
- arsenic
- oxide film
- region
- substrate
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1669876A JPS5299785A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1669876A JPS5299785A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5299785A JPS5299785A (en) | 1977-08-22 |
| JPS6118346B2 true JPS6118346B2 (enExample) | 1986-05-12 |
Family
ID=11923503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1669876A Granted JPS5299785A (en) | 1976-02-18 | 1976-02-18 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5299785A (enExample) |
-
1976
- 1976-02-18 JP JP1669876A patent/JPS5299785A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5299785A (en) | 1977-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62588B2 (enExample) | ||
| JPS5824018B2 (ja) | バイポ−ラicの製造方法 | |
| JPS6241425B2 (enExample) | ||
| JPS62203380A (ja) | 半導体素子の製造方法 | |
| US4589936A (en) | Method for fabricating a semiconductor device by co-diffusion of arsenic and phosphorus | |
| US4178190A (en) | Method of making a bipolar transistor with high-low emitter impurity concentration | |
| JPS62290173A (ja) | 半導体集積回路装置の製造方法 | |
| JPS60175453A (ja) | トランジスタの製造方法 | |
| US4136353A (en) | Bipolar transistor with high-low emitter impurity concentration | |
| JPS6133253B2 (enExample) | ||
| JPS6155250B2 (enExample) | ||
| JPS624339A (ja) | 半導体装置及びその製造方法 | |
| US5091323A (en) | Process for the fabrication of bipolar device | |
| JP2921859B2 (ja) | 半導体集積回路 | |
| JP2890509B2 (ja) | 半導体装置の製造方法 | |
| JPS6330787B2 (enExample) | ||
| JPH0411738A (ja) | バイポーラトランジスタ | |
| JPH05335329A (ja) | 半導体装置及びその製造方法 | |
| JPH04116933A (ja) | 半導体装置の製造方法 | |
| JPS6122866B2 (enExample) | ||
| JPS6241426B2 (enExample) | ||
| JPH0137856B2 (enExample) | ||
| JPH0579186B2 (enExample) | ||
| JPS63144567A (ja) | 半導体装置の製造方法 | |
| JPH05243249A (ja) | バイポーラトランジスタの製造方法 |