JPS61183459A - Formation of protective film - Google Patents
Formation of protective filmInfo
- Publication number
- JPS61183459A JPS61183459A JP2085285A JP2085285A JPS61183459A JP S61183459 A JPS61183459 A JP S61183459A JP 2085285 A JP2085285 A JP 2085285A JP 2085285 A JP2085285 A JP 2085285A JP S61183459 A JPS61183459 A JP S61183459A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- resins
- sputtering
- target
- organic polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は磁気記録媒体、ビデオディスク、レコード盤、
セラミック基板、半導体基板、金属導体等の保護膜の形
成方法に関し、特に耐摺動性、耐湿性を改善した保護膜
の形成方法に関している。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to magnetic recording media, video disks, vinyl records,
The present invention relates to a method for forming a protective film for ceramic substrates, semiconductor substrates, metal conductors, etc., and particularly relates to a method for forming a protective film with improved sliding resistance and moisture resistance.
磁気ディスク、磁気テープ、ビデオディスク。 magnetic disks, magnetic tapes, video discs.
レコード盤などの情報記録媒体は、その表面にヘッドと
の摺動に耐える10〜10000 Aの耐摺動性の潤滑
油あるいは固体潤滑層が存在することが必要とされてい
る。このような薄膜を均一に形成する方法としては、金
属セッケン等の単分子層を引上げ方式で形成したり、単
量体を用いてプラズマ重合法により基板上に重合膜を形
成したシ、有機高分子をスパッタして保護膜を得る方法
などが知られている。Information recording media such as record discs are required to have a sliding resistant lubricating oil or solid lubricating layer of 10 to 10,000 A on their surfaces to withstand sliding with the head. Methods for forming such a thin film uniformly include forming a monomolecular layer of metal soap using a pulling method, forming a polymer film on a substrate using a monomer using a plasma polymerization method, and forming a polymer film on a substrate using an organic polymer. A method of obtaining a protective film by sputtering molecules is known.
上記各方法のうち、スパッタによる保護膜形成方法は、
例えば、特公昭57−11677に教示されている如く
、その簡便性、膜の均一性などの点が優れ、各種被保護
部材に対して有効な膜形成方法であると考えられる。Among the above methods, the method for forming a protective film by sputtering is
For example, as taught in Japanese Patent Publication No. 57-11677, it is excellent in terms of simplicity and uniformity of the film, and is considered to be an effective film forming method for various members to be protected.
しかし、種々実験を重ねた結果、スパッタリングによシ
得られた有機高分子膜は摩擦係数が高くかつ耐摺動性に
劣ることがわかった。特に下地との接合性が悪い場合及
び下地表面が酸化あるいは粗れている場合に著しい。However, as a result of various experiments, it was found that organic polymer films obtained by sputtering have a high coefficient of friction and poor sliding resistance. This is particularly noticeable when the bonding property with the base is poor or when the base surface is oxidized or rough.
また、これらの保護膜を金属導体、半導体、セラミック
基板等の耐湿性保護膜として用いた場合、被保護部材と
の接合性が弱いため耐湿性に劣ることもわかった。It has also been found that when these protective films are used as moisture-resistant protective films for metal conductors, semiconductors, ceramic substrates, etc., the moisture resistance is poor due to weak bonding with the protected member.
〔発明の目的]
本発明の目的は、上記従来技術の欠点を解消し、摩擦係
数が低く、耐摺動性に富み、密着性が高くて耐湿性が優
れた保護膜の形成方法を提供することにある。[Object of the Invention] An object of the present invention is to eliminate the drawbacks of the above-mentioned conventional techniques and provide a method for forming a protective film that has a low coefficient of friction, high sliding resistance, high adhesion, and excellent moisture resistance. There is a particular thing.
本願発明者らは、保護膜の検討を進める中で、スパッタ
に用いるターゲット素材が有機高分子だけであれば、保
護膜の性質として必要である耐摺動と摩擦係数、密着力
等に限界があること、さらに各種ターゲット素材の中で
ホウ素化合物が上記特性、特に摩擦係数を改善する性質
を持っていること、しかしホウ素化合物単体では形成さ
れた膜がもろく耐衝撃性に劣ること等を確認するに至っ
た。While investigating a protective film, the inventors discovered that if the target material used for sputtering is only an organic polymer, there are limits to the properties of the protective film such as sliding resistance, coefficient of friction, adhesion, etc. Furthermore, we confirmed that among various target materials, boron compounds have the above-mentioned properties, especially the property of improving the coefficient of friction. However, when using boron compounds alone, the formed film is brittle and has poor impact resistance. reached.
本発明はこのような知見に基づいてなされたもので、ス
パッタリングによる有機高分子の保護膜の形成方法にお
いて、用いるターゲット素材が少なくとも1糧の有機高
分子と少なくともIWiのホウ素化合物とからなること
を特徴とする。このようにすることによって、極めて低
い摩擦係数を得、長期的に潤滑性、it湿性が維持でき
、その他の物理的、化学的性質も良好な保護膜を得るこ
とができる。The present invention was made based on such knowledge, and it is based on the method for forming a protective film of an organic polymer by sputtering, in which the target material used is composed of at least one organic polymer and at least an IWi boron compound. Features. By doing so, it is possible to obtain an extremely low coefficient of friction, maintain lubricity and wetness over a long period of time, and obtain a protective film with good physical and chemical properties.
本発明を実施するためのスパッタリング方法としては、
直流、低周波、高周波(RF)、マイクロ波などのグロ
ー放電によるスパッタ、イオンビームスパッタ等の公知
の方法がすべて使用可能である。これらのうち、特に平
行電極型RFスパッタ法と、マグネトロン型RFスパッ
タ法が適していると言える。RFスパッタの場合、放電
電力が0.01〜70W/Fff2ノ範囲テスパツタで
き、特に0.1〜20W/cWt2の範囲が望ましい。As a sputtering method for implementing the present invention,
All known methods such as direct current, low frequency, radio frequency (RF), and microwave sputtering using glow discharge, ion beam sputtering, etc. can be used. Among these, the parallel electrode type RF sputtering method and the magnetron type RF sputtering method are particularly suitable. In the case of RF sputtering, a discharge power range of 0.01 to 70 W/Fff2 can be used, and a range of 0.1 to 20 W/cWt2 is particularly desirable.
また、雰囲気ガスの圧力は、グロー放電が生じる範囲な
らばどんな圧力でもよいが、1O−1I〜l ’l’o
rrの範囲が望ましい。Further, the pressure of the atmospheric gas may be any pressure within the range where glow discharge occurs;
A range of rr is desirable.
さらに、本発明においてスパッタに使用する雰囲気ガス
としては、He 、 No 、 Ar 、 Kr 、
Xs 等の不活性ガスのほか、02 # N2 y
N2などの反応性ガスのうちのいずれか1種または2種
以上の混合ガスを用いてもよい。Furthermore, the atmospheric gases used for sputtering in the present invention include He, No, Ar, Kr,
In addition to inert gases such as Xs, 02 # N2 y
Any one kind or a mixture of two or more kinds of reactive gases such as N2 may be used.
また、反応性ガスの不活性ガスへの混合とじては、Ar
+o2. Ar +N2 、 Ar +H2、Ar
+N2 +H2が良好で、混合割合としてはArに対し
て1〜10%の範囲で効果がある。さらに反応性ガスの
効果としては、02の場合、有機高分子のスパッタ膜の
炭化促進、N2C)場合、有機高分子のスパッタ膜中へ
c三N。In addition, for mixing reactive gas with inert gas, Ar
+o2. Ar +N2, Ar +H2, Ar
+N2 +H2 is good, and a mixing ratio of 1 to 10% relative to Ar is effective. Furthermore, the effect of the reactive gas is that in the case of 02, carbonization of the organic polymer sputtered film is promoted, and in the case of N2C, c3N is added into the organic polymer sputtered film.
NN2等の形で入)込み、耐熱、接着性の向上、N2の
場合、 CH2、CHの反応を起しスパッタ膜の酸化を
防止し安定化することなどが挙げられる。In the case of N2, it causes a reaction of CH2 and CH to prevent oxidation and stabilize the sputtered film.
本発明でターゲットとして使用可能な有機高分子は次の
ごときものを例示することができる。Examples of organic polymers that can be used as targets in the present invention include the following.
すなわち、フェノール樹脂、フラン樹脂、キシレン・ホ
ルムアルデヒド樹脂、尿素樹脂、メラミン樹脂、アニリ
ン樹脂、アルキド樹脂、不飽和ポリエステル樹脂、エポ
キシ樹脂、ポリウレタン樹脂等その他の熱硬化性樹脂、
およびポリプロビレ/、ポリーP−キシリレン、ポリ酢
酸ビニル、ポリアクリレート、ポリメタクリレート、ポ
リ塩化ビニル、ポリ塩化ビニリデン、ポリアクリロニト
リル、ポリビニルエーテル、ポリビニルケトン。That is, other thermosetting resins such as phenolic resins, furan resins, xylene formaldehyde resins, urea resins, melamine resins, aniline resins, alkyd resins, unsaturated polyester resins, epoxy resins, polyurethane resins,
and polypropylene/, poly P-xylylene, polyvinyl acetate, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyacrylonitrile, polyvinyl ether, polyvinyl ketone.
ポリエーテル、ポリカーボネート、ポリアミド。polyether, polycarbonate, polyamide.
ジエン系プラスチック、熱可塑性ポリウレタン系プラス
チック等その他の熱可塑性樹脂。Other thermoplastic resins such as diene plastics and thermoplastic polyurethane plastics.
さらにフッ素樹脂、ポリイミド系樹脂などが挙げられる
。Further examples include fluororesins and polyimide resins.
これらのうち特にフェノール樹脂、メラミン樹脂、不飽
和ポリエステル樹脂、エポキシ樹脂、ポリイミド系樹脂
等の熱硬化性樹脂、およびポリ酢酸ビニル、ポリ塩化ビ
ニル、ポリ塩化ビニリデン。Among these, thermosetting resins such as phenol resins, melamine resins, unsaturated polyester resins, epoxy resins, and polyimide resins, as well as polyvinyl acetate, polyvinyl chloride, and polyvinylidene chloride.
ポリアミド、フッ素樹脂等の熱可塑性樹脂がターゲツト
材として適していると言える。また、これらの高分子を
組合わせても良く、ターゲットの組合せとしては、熱硬
化性樹脂同志、熱可塑性樹脂同志、熱硬化性樹脂と熱可
塑性樹脂の組合せが考えられ、特に以下に示した組合せ
が良好である。Thermoplastic resins such as polyamide and fluororesin are suitable as target materials. In addition, these polymers may be combined. Target combinations include thermosetting resins, thermoplastic resins, and thermosetting resins and thermoplastic resins. In particular, the following combinations are possible: is good.
フェノール樹脂とエポキシ樹脂、エポキシ樹脂とポリイ
ミド系樹脂、フェノール樹脂とポリイミド系樹脂の熱硬
化性樹脂同志、ポリ塩化ビニルとポリ塩化ビニリデン、
ポリアミドとポリ塩化ビニリデン、ポリアミドとフッ素
樹脂の熱可塑性樹脂1i1の組合せ、およびフェノール
樹脂とポ1)憔什ビニリデン、エポキシ樹脂とポリアミ
ド、ポリアミドとフェノール樹脂、フェノール樹脂とフ
ッ素樹脂、エポキシ樹脂とフッ素樹脂、ポリイミド系樹
脂とフッ素樹脂、ポリイミド系樹脂とポリアミド、ポリ
イミド系樹脂とポリ塩化ビニリデンの熱可塑性樹脂と熱
硬化性樹脂との組合せがあり、その他、エポキシ樹脂と
ポリアミドとポリイミド系樹脂のように3種の組合せを
行っても良い。Phenol resin and epoxy resin, epoxy resin and polyimide resin, thermosetting resins of phenol resin and polyimide resin, polyvinyl chloride and polyvinylidene chloride,
Combinations of polyamide and polyvinylidene chloride, polyamide and fluororesin thermoplastic resins, and phenolic resins and polyvinylidene, epoxy resins and polyamides, polyamides and phenolic resins, phenolic resins and fluororesins, epoxy resins and fluororesins There are combinations of thermoplastic resins and thermosetting resins such as polyimide resin and fluororesin, polyimide resin and polyamide, polyimide resin and polyvinylidene chloride, and other combinations such as epoxy resin, polyamide, and polyimide resin. A combination of species may also be used.
また、本発明において使用可能なホウ素化合物WB 、
TaB 、 Ta3B11. Nb5BB 、 Mn
3Bq 、 AtB2 、 MgB2 。In addition, boron compounds WB that can be used in the present invention,
TaB, Ta3B11. Nb5BB, Mn
3Bq, AtB2, MgB2.
TiB2 、 C(IBII 、 YJ 、 CaB6
、 BaH2、NaBq 、 ZrB12 。TiB2, C(IBII, YJ, CaB6
, BaH2, NaBq, ZrB12.
等のホウ化物、H3BO3,H2B、07. )In2
等のホウ酸、その他ホウ酸エステル、ホウ酸塩、窒
化ホウ素a B2O5# BuO5e B4O5等の酸
化ホウ素などが挙げられる。Borides such as H3BO3, H2B, 07. )In2
Examples include boric acid such as boric acid esters, boric acid salts, and boron oxides such as boron nitride a, B2O5#, BuO5e, and B4O5.
これらのうち特に、AtB2 、 TiB2 、 Cr
B2 、 B2C)5 。Among these, especially AtB2, TiB2, Cr
B2, B2C)5.
窒化ホウ素が適しており、2aE以上の組合せとしては
、AtB 2とB2O311jl化ホウ素CrB2 、
TiB2 とB20う、窒化ホウ素と8205とT
iB2 等が有効である。Boron nitride is suitable, and combinations of 2aE or higher include AtB2 and B2O311jl boron CrB2,
TiB2 and B20, boron nitride and 8205 and T
iB2 etc. are effective.
以下、本発明を実施例にもとすき更に詳述する・第1図
(&) M (b) I (e)は2種以上の有機高分
子ターゲット又はホウ素化合物を用いる際のターゲット
の形状1組合せについて示した図である。Hereinafter, the present invention will be described in more detail based on examples. ・Figure 1 (&) M (b) I (e) shows the shape 1 of the target when using two or more types of organic polymer targets or boron compounds. It is a figure shown about a combination.
また、本発明のスパッタリング方法の一例について第2
図に示した。Further, a second example of the sputtering method of the present invention is also described.
Shown in the figure.
第1図においてスパッタリングされるターゲツト材は等
分割で配置され、第1図(a)は有機高分子1とホウ素
化合物2の組合せ、第1図(b)は第1の有機高分子1
とホウ素化合物2及び第2の有機高素化合物2、第2の
有機高分子3又はホウ素化合物3及び第4の有機高分子
4又はホウ素化合物404種類の組合せの場合の一例で
ある。ターゲツト材を増す場合には上記に順じて分割数
を増やせば良い。また、ターゲット数が複数の場合でも
個々のターゲットは上記した様に複数のターゲツト材で
構成することができる。In FIG. 1, the target material to be sputtered is arranged in equal parts, and FIG. 1(a) shows a combination of organic polymer 1 and boron compound 2, and FIG. 1(b) shows a combination of first organic polymer 1.
This is an example of a combination of the boron compound 2 and the second organic polymer compound 2, the second organic polymer 3 or the boron compound 3 and the fourth organic polymer 4 or the boron compound 404. When increasing the number of target materials, the number of divisions may be increased in accordance with the above. Furthermore, even when there is a plurality of targets, each target can be composed of a plurality of target materials as described above.
尚、本発明においては上記した等分割ターゲットの他、
有機高分子中にホウ素化合物を分散させたターゲットを
用いても同様の効果が得られることを確認している。In addition, in the present invention, in addition to the above-mentioned equally divided targets,
It has been confirmed that similar effects can be obtained using a target in which a boron compound is dispersed in an organic polymer.
第2図(&) 、 (b)は、複合又は層状スパッタリ
ングを行う場合の電極機構の略図である。第2図(a)
はターゲット側電極5に第1図に示したターゲットを取
り付け、基板側電極6に被保護部材の基板7を載置させ
、その状態で電極6を回転させつつ、ターゲツト材を所
望の量均−に基板70表面上に形成する例である。第2
図(b)は、ターゲット側電極5にそれぞれ1種又は複
数種の第1図に示したターゲラ)k取り付け、基板側電
極6を反転(180’)させることにより、2層以上の
膜を形成する例である。また、第2図(b)の例を用い
ても第2図(IL)と同様の複合化も可能である。Figures 2(b) and 2(b) are schematic diagrams of the electrode arrangement when performing composite or layered sputtering. Figure 2(a)
The target shown in FIG. 1 is attached to the target side electrode 5, the substrate 7 of the member to be protected is placed on the substrate side electrode 6, and while rotating the electrode 6, the target material is uniformly applied in a desired amount. In this example, it is formed on the surface of the substrate 70. Second
In Figure (b), a film of two or more layers is formed by attaching one or more types of targeters shown in Figure 1 to the target side electrode 5 and inverting the substrate side electrode 6 (180'). This is an example. Moreover, even if the example of FIG. 2(b) is used, the same combination as that of FIG. 2(IL) is also possible.
第3図は本発明に使用するスパッタ装置の概略構成図で
ある。第4図は第3図の被保護部材7の一部拡大図で、
13がシリコン等から成る基板、12がr−F・203
から成る磁気記録層である。第3図5はターゲット側電
極、8はチャンバー、9は真空引きバルブ、10は雰囲
気ガス導入バルブである。FIG. 3 is a schematic diagram of a sputtering apparatus used in the present invention. FIG. 4 is a partially enlarged view of the protected member 7 in FIG.
13 is a substrate made of silicon etc., 12 is r-F・203
It is a magnetic recording layer consisting of. FIG. 3 shows a target-side electrode, 8 a chamber, 9 a vacuum valve, and 10 an atmospheric gas introduction valve.
この様なスパッタ装置によって第4図11に示した保護
膜を形成する。A protective film shown in FIG. 4 is formed using such a sputtering apparatus.
保護膜の形成方法の一例は次のようにして行なうことが
できる。まず、基体13(直径3インチの81ウエハ)
上に設けた磁気記録層12 (r −Fe205)を陽
極とし、保護膜素材(有機高分子とホウ素化合物)を陰
極としてチャンバー8内を1×1o→Torr以下に排
気した後、雰囲気ガス(ArまたはAr+02゜Ar+
N2 、 Ar+H2、Ar+N2+H2)を導入し、
lXl0−’Torr〜0.5Torrにガス圧を固定
する。そして高周波(13,56MHz )を用いてグ
ロー放電を生じさせ(放電電力0.I W/cm2〜ω
W/ad )ると磁気記録層12上に保護膜11が形成
される。An example of a method for forming the protective film can be performed as follows. First, substrate 13 (81 wafer with a diameter of 3 inches)
The magnetic recording layer 12 (r -Fe205) provided above is used as an anode, and the protective film material (organic polymer and boron compound) is used as a cathode. or Ar+02°Ar+
N2, Ar+H2, Ar+N2+H2),
The gas pressure is fixed at lXl0-'Torr~0.5 Torr. Then, a glow discharge is generated using a high frequency (13,56 MHz) (discharge power 0.I W/cm2 ~ ω
W/ad), a protective film 11 is formed on the magnetic recording layer 12.
上述したスパッタリング法を用いて、4稲類の有機高分
子材料と複数のホウ素化合物とを各種組合せて保護膜を
形成し、その保護膜の耐摩耗性。Using the sputtering method described above, a protective film was formed using various combinations of the organic polymer materials of the four rice species and a plurality of boron compounds, and the wear resistance of the protective film was evaluated.
摩擦係数、密着力を測定した。表はその実験結果を示し
たものである。The friction coefficient and adhesion force were measured. The table shows the experimental results.
(以下余白)
なお、本発明によって形成された保護膜と従来法によっ
て形成された保護膜とを比較するために実験例&46に
従来法の保護膜の特性を示した。(Left below) In order to compare the protective film formed by the present invention with the protective film formed by the conventional method, the characteristics of the conventional protective film are shown in Experimental Example &46.
この表から明らかな様に、本発明によシ形成された保護
膜(実験例屋1〜45)は従来例(A46)に比べ、1
〜10倍の耐摩耗性および1/2〜1/1o以下の摩擦
係数、2〜5倍の密着力を有しており、保護膜として非
常に効果がある。As is clear from this table, the protective films formed according to the present invention (Experimental Examples 1 to 45) were 1.
It has up to 10 times higher abrasion resistance, a friction coefficient of 1/2 to 1/1 or less, and 2 to 5 times higher adhesion, making it very effective as a protective film.
第1図は本発明の一実施態様に使用されるターゲットの
上面図、第2図は本発明の一実施態様に使用されたスパ
ッタ装置の電極構造部の斜視図、第3図はスパッタ装置
の概略図、第4図は保護膜が形成された磁気記録媒体の
一部拡大断面図である。
1・・・有機高分子材、2・・・ホウ素化合物材、3・
・・有機高分子材又はホウ素化合物材、4・・・有機高
分子材又はホウ素化合物材、5・・・ターゲット側電極
、6・・・基板側電極、7・・・被保護部材の基板、8
・・・チャンバー、9・・・真空引きバルブ、10・・
・雰囲気ガス導入バルブ、11・・・保護膜、12・・
・磁気記録層、13・・・基体。
代理人 弁理士 秋 本 正 実
第1図
((II)
(b)
(C)
第2図
(b)FIG. 1 is a top view of a target used in an embodiment of the present invention, FIG. 2 is a perspective view of an electrode structure of a sputtering device used in an embodiment of the present invention, and FIG. 3 is a top view of a target used in an embodiment of the present invention. The schematic diagram and FIG. 4 are partially enlarged sectional views of a magnetic recording medium on which a protective film is formed. 1... Organic polymer material, 2... Boron compound material, 3...
...Organic polymer material or boron compound material, 4...Organic polymer material or boron compound material, 5...Target side electrode, 6...Substrate side electrode, 7...Substrate of protected member, 8
...Chamber, 9...Vacuum valve, 10...
・Atmospheric gas introduction valve, 11...Protective film, 12...
- Magnetic recording layer, 13...substrate. Agent Patent Attorney Tadashi Akimoto Figure 1 ((II) (b) (C) Figure 2 (b)
Claims (1)
形成方法において、ターゲット素材が少なくとも一種の
有機高分子化合物、少なくとも一種のホウ素化合物とか
ら構成されることを特徴とする保護膜の形成方法。1. A method for forming a protective film on the surface of a protected member by sputtering, characterized in that the target material is composed of at least one type of organic polymer compound and at least one type of boron compound.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2085285A JPS61183459A (en) | 1985-02-07 | 1985-02-07 | Formation of protective film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2085285A JPS61183459A (en) | 1985-02-07 | 1985-02-07 | Formation of protective film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61183459A true JPS61183459A (en) | 1986-08-16 |
Family
ID=12038625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2085285A Pending JPS61183459A (en) | 1985-02-07 | 1985-02-07 | Formation of protective film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61183459A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6398857A (en) * | 1986-10-16 | 1988-04-30 | Fujitsu Ltd | Magneto-optical disk |
JPH01245449A (en) * | 1988-03-25 | 1989-09-29 | Hitachi Ltd | Optical information recorder |
JPH03153859A (en) * | 1989-11-08 | 1991-07-01 | Sekisui Chem Co Ltd | Surface-modified plastic |
JPH09219045A (en) * | 1997-03-24 | 1997-08-19 | Fujitsu Ltd | Disk device |
JP2006315933A (en) * | 2005-05-16 | 2006-11-24 | National Institute Of Advanced Industrial & Technology | Organic inorganic hybrid thin film and its manufacturing method |
WO2006129702A1 (en) * | 2005-06-02 | 2006-12-07 | National University Corporation Kanazawa University | Medical appliance having polyimide film and method for manufacture thereof |
JP2013239749A (en) * | 2000-03-13 | 2013-11-28 | Foundation For Advancement Of International Science | Method for sputtering nitride film, and method for forming gate insulation film |
WO2024070858A1 (en) * | 2022-09-27 | 2024-04-04 | 東京エレクトロン株式会社 | Substrate processing method |
-
1985
- 1985-02-07 JP JP2085285A patent/JPS61183459A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6398857A (en) * | 1986-10-16 | 1988-04-30 | Fujitsu Ltd | Magneto-optical disk |
JPH01245449A (en) * | 1988-03-25 | 1989-09-29 | Hitachi Ltd | Optical information recorder |
JPH03153859A (en) * | 1989-11-08 | 1991-07-01 | Sekisui Chem Co Ltd | Surface-modified plastic |
JPH09219045A (en) * | 1997-03-24 | 1997-08-19 | Fujitsu Ltd | Disk device |
JP2013239749A (en) * | 2000-03-13 | 2013-11-28 | Foundation For Advancement Of International Science | Method for sputtering nitride film, and method for forming gate insulation film |
JP2006315933A (en) * | 2005-05-16 | 2006-11-24 | National Institute Of Advanced Industrial & Technology | Organic inorganic hybrid thin film and its manufacturing method |
WO2006129702A1 (en) * | 2005-06-02 | 2006-12-07 | National University Corporation Kanazawa University | Medical appliance having polyimide film and method for manufacture thereof |
JP5066698B2 (en) * | 2005-06-02 | 2012-11-07 | テルモ株式会社 | MEDICAL DEVICE HAVING POLYIMIDE FILM AND PROCESS FOR PRODUCING THE SAME |
US8900714B2 (en) | 2005-06-02 | 2014-12-02 | Terumo Kabushiki Kaisha | Medical appliance having polyimide film and method for manufacture thereof |
WO2024070858A1 (en) * | 2022-09-27 | 2024-04-04 | 東京エレクトロン株式会社 | Substrate processing method |
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