JPS6118185A - Lead frame for photo-semiconductor device - Google Patents
Lead frame for photo-semiconductor deviceInfo
- Publication number
- JPS6118185A JPS6118185A JP59138795A JP13879584A JPS6118185A JP S6118185 A JPS6118185 A JP S6118185A JP 59138795 A JP59138795 A JP 59138795A JP 13879584 A JP13879584 A JP 13879584A JP S6118185 A JPS6118185 A JP S6118185A
- Authority
- JP
- Japan
- Prior art keywords
- reflecting part
- layer
- lead frame
- deposit layer
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000007747 plating Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052709 silver Inorganic materials 0.000 abstract description 16
- 239000004332 silver Substances 0.000 abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 239000011162 core material Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical group [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は光半導体装置用リードフレームに係り、特に皿
状の反射部を有し、この反射部に４００〜９００ｎＩｌ
ｌ（青色から赤外領域）の半導体発光素子を取付けてな
る光半導体装置用リードフレームに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a lead frame for an optical semiconductor device, and in particular has a dish-shaped reflective part, and the reflective part has a 400 to 900 nIl
The present invention relates to a lead frame for an optical semiconductor device to which a semiconductor light emitting element of 1 (blue to infrared region) is mounted.
［発明の技術的背景］
半導、体発光素子には、例えばＧａＰを用いた発光ダイ
オード（ＬＥＤ）のように主発光面だけではなく素子全
体が発光するものが知られている。[Technical Background of the Invention] Semiconductor and body light emitting devices, such as light emitting diodes (LEDs) using GaP, are known in which not only the main light emitting surface but also the entire device emits light.
第３図は、この発光ダイオードを組込んだ光半導体装置
の構造を示すものである。同図に於いて、発光ダイオー
ド１１は一方のリード１２の先端部にマウントされてい
る。この発光ダイオード１１はさらにボンディングワイ
ヤ１３を介して他方のり−ド１４に電気的に接続されて
いる。そして、これら発光ダイオード１１．リード１２
．１４及びボンディングワイヤ１３は、エポキシ樹脂で
形成された外囲器１５により一体化されている。FIG. 3 shows the structure of an optical semiconductor device incorporating this light emitting diode. In the figure, a light emitting diode 11 is mounted at the tip of one lead 12. This light emitting diode 11 is further electrically connected to the other board 14 via a bonding wire 13. And these light emitting diodes 11. lead 12
．． 14 and the bonding wire 13 are integrated by an envelope 15 made of epoxy resin.
また、リード１２の発光ダイオード１１の取付部にはそ
の輝度を高めるために反射部１６が形成されている。第
４図はこの反射部１６の構造を示すものである。同図に
於いて、リード１２本体は、鉄の芯材１７の表面を銅め
っき層１８で覆ったものである。このリード１２本体の
反射部１６の全面は厚さ２．０〜４．０μの銀めっき層
１９で覆われている。第５図はこの光半導体装置の製造
に用いられるリードフレーム２０の形状を示すものであ
る。Further, a reflective portion 16 is formed at the attachment portion of the lead 12 for the light emitting diode 11 in order to increase its brightness. FIG. 4 shows the structure of this reflecting section 16. In the figure, the main body of the lead 12 is made by covering the surface of an iron core material 17 with a copper plating layer 18. The entire surface of the reflective portion 16 of the main body of the lead 12 is covered with a silver plating layer 19 having a thickness of 2.0 to 4.0 μm. FIG. 5 shows the shape of a lead frame 20 used in manufacturing this optical semiconductor device.
［背景技術の問題点］
しかしながら、上記のようにリードフレーム２０の反射
部１６の全面に銀めっきを施すと、製品価格が高くなる
という問題があった。また、反射部１Ｇの上面部のみに
銀めっきを施す構造とすれば、材料費が少なくなり価格
は低減されるが、この場合にはリードフレーム２０の芯
材１７に施された銅めっき層１８が露出し、その結果さ
び等が生じるという問題があった。[Problems with Background Art] However, when the entire surface of the reflective portion 16 of the lead frame 20 is silver-plated as described above, there is a problem in that the product price becomes high. Further, if the structure is such that only the upper surface of the reflective section 1G is silver-plated, the material cost will be reduced and the price will be reduced. There is a problem in that the metal is exposed and as a result rust etc. occur.
［発明の目的］
本発明は上記実情に鑑みてなされたもので、その目的は
、反射効率を低下させることなく、製品価格が低減し、
かつ−さび等が発生することなく品質にも優れた光半導
体装置用リードフレームを提供することにある。[Object of the Invention] The present invention was made in view of the above-mentioned circumstances, and its purpose is to reduce the product price without reducing the reflection efficiency.
Moreover, it is an object of the present invention to provide a lead frame for an optical semiconductor device which is free from rust and has excellent quality.
［発明の概要］
本発明は、反射部に波長４００〜９００ｎｍの光を発光
する半導体発光素子を取付けてなる光半導体装置用リー
ドフレームに於いて、前記反射部のめつき層を２層構造
とするもので、前記反射郡全体を薄い第１のめつき層で
覆い、さらに前記反射部の上端部に於いては第１のめつ
き層上に第２のめつき層を反射効率を上げるに必要な厚
さに形成するものである。[Summary of the Invention] The present invention provides a lead frame for an optical semiconductor device in which a semiconductor light emitting element that emits light with a wavelength of 400 to 900 nm is attached to a reflective part, in which the plating layer of the reflective part has a two-layer structure. The entire reflective group is covered with a thin first plating layer, and a second plating layer is further provided on the first plating layer at the upper end of the reflective part to increase reflection efficiency. It is formed to the required thickness.
［発明の実施例］
以下、図面を参照して本考案の一実施例を説明する。第
１図は第２図に示すリードフレーム２１に形成された皿
状の反射部２２の断面構造を示すものである。第１図及
び第２図に於いて、リードフレーム２１は鉄の芯材２３
の表面に銅めっき２４を施して形成したものである。こ
のリードフレーム２１には、反射部２２の全面を覆うよ
うに例えば第１の銀めっき層２５が形成されている。さ
らに、反射部２２の上端部にはこの銀めっき層２５上に
第２の銀めっき層２６が形成されている。[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a cross-sectional structure of a dish-shaped reflective portion 22 formed on the lead frame 21 shown in FIG. In FIGS. 1 and 2, the lead frame 21 has an iron core material 23.
It is formed by applying copper plating 24 to the surface. For example, a first silver plating layer 25 is formed on the lead frame 21 so as to cover the entire surface of the reflective section 22 . Furthermore, a second silver plating layer 26 is formed on the silver plating layer 25 at the upper end portion of the reflective portion 22 .
すなわち、上記リードフレーム２１に於いては、反射部
２２のめつき層を２層構造とするものである。That is, in the lead frame 21, the plating layer of the reflective portion 22 has a two-layer structure.
このため、例えば第１の銀めっき層２５の厚さを１゜０
μ、第２の銀めっき層２６の厚さを２．０μとして、反
射部２２の上端部分を反射効率を上げるために必要な厚
さまで厚く、その他の部分を必要最小限まで薄くするこ
とができる。従って、反射効率を下げることなく、従来
構造に比べて銀めっきの使用量を少なくすることができ
、その結果製品価格を低減できる。また、反射部２２の
全面は第１の銀めっき層２４により覆われているためさ
びが発生する恐れはない。For this reason, for example, the thickness of the first silver plating layer 25 is set to 1°0.
μ, the thickness of the second silver plating layer 26 is 2.0μ, the upper end portion of the reflective section 22 can be thickened to the thickness necessary to increase the reflection efficiency, and the other portions can be thinned to the necessary minimum. . Therefore, the amount of silver plating used can be reduced compared to the conventional structure without lowering the reflection efficiency, and as a result, the product price can be reduced. Furthermore, since the entire surface of the reflective section 22 is covered with the first silver plating layer 24, there is no risk of rust occurring.
尚、上記実施例に於いては第１層を第１の銀めっき層２
５としたが、これをニッケルー錫めっきとすれば、さら
に価格低減が可能となる。In the above embodiment, the first layer is the first silver plating layer 2.
5, but if it is nickel-tin plated, the price can be further reduced.
［発明の効果］
以上のように本発明によれば、反射効率を下げることな
く、製品価格を低減し、かつさび等が発生することがな
く品質にも優れた光半導体装置用リードフレームを提供
できる。[Effects of the Invention] As described above, according to the present invention, a lead frame for an optical semiconductor device is provided that reduces the product price without lowering the reflection efficiency, is free from rust, and has excellent quality. can.
第１図は本発明の一実施例に係る光半導体装置用リード
フレームの反射部の構造を示す断面図、第２図は同リー
ドフレームの全体構成を示す斜視図、第３図は従来の光
半導体装置の構成を示す断面図、第４図は第３図の装置
に用いられるリードフレームの反射部の構造を示す断面
図、第５図は第４図のリードフレームの全体構成を示す
斜視図である。
２１・・・リードフレーム、２２・・・反射部、２５・
・・第１の銀めっき層、２６・・・第２の銀めっき層。FIG. 1 is a sectional view showing the structure of a reflective part of a lead frame for an optical semiconductor device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the overall structure of the lead frame, and FIG. 3 is a conventional optical semiconductor device lead frame. 4 is a cross-sectional view showing the structure of a reflective part of a lead frame used in the device shown in FIG. 3; FIG. 5 is a perspective view showing the overall structure of the lead frame shown in FIG. 4. It is. 21...Lead frame, 22...Reflection part, 25.
...first silver plating layer, 26...second silver plating layer.
Claims (1)
る光半導体装置用リードフレームに於いて、前記反射部
を２層構造のめっき層で形成したことを特徴とする光半
導体装置用リードフレーム。What is claimed is: 1. A lead frame for an optical semiconductor device having a reflective part for increasing the luminous efficiency of a semiconductor light emitting element, wherein the reflective part is formed of a plating layer having a two-layer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138795A JPS6118185A (en) | 1984-07-04 | 1984-07-04 | Lead frame for photo-semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138795A JPS6118185A (en) | 1984-07-04 | 1984-07-04 | Lead frame for photo-semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6118185A true JPS6118185A (en) | 1986-01-27 |
Family
ID=15230397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59138795A Pending JPS6118185A (en) | 1984-07-04 | 1984-07-04 | Lead frame for photo-semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6118185A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63139575A (en) * | 1986-12-01 | 1988-06-11 | 株式会社 ソフイア | Pinball game machine |
| JP2001230453A (en) * | 1999-12-08 | 2001-08-24 | Nichia Chem Ind Ltd | Led lamp and its manufacturing method |
| JP2002094130A (en) * | 1999-01-05 | 2002-03-29 | Nichia Chem Ind Ltd | Light emitting diode, its manufacturing method and indicating device using the same |
| JP2005129970A (en) * | 2005-02-08 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Lead frame for semiconductor device |
| JP2005347375A (en) * | 2004-06-01 | 2005-12-15 | Shinko Electric Ind Co Ltd | Stem for light-emitting element, and optical semiconductor device |
| JP2008220712A (en) * | 2007-03-14 | 2008-09-25 | Olympia:Kk | Pinball game machine |
-
1984
- 1984-07-04 JP JP59138795A patent/JPS6118185A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63139575A (en) * | 1986-12-01 | 1988-06-11 | 株式会社 ソフイア | Pinball game machine |
| JP2002094130A (en) * | 1999-01-05 | 2002-03-29 | Nichia Chem Ind Ltd | Light emitting diode, its manufacturing method and indicating device using the same |
| JP2001230453A (en) * | 1999-12-08 | 2001-08-24 | Nichia Chem Ind Ltd | Led lamp and its manufacturing method |
| JP2005347375A (en) * | 2004-06-01 | 2005-12-15 | Shinko Electric Ind Co Ltd | Stem for light-emitting element, and optical semiconductor device |
| JP2005129970A (en) * | 2005-02-08 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Lead frame for semiconductor device |
| JP2008220712A (en) * | 2007-03-14 | 2008-09-25 | Olympia:Kk | Pinball game machine |
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