JPS61179840A - Aluminum wire rod for semiconductor device bonding - Google Patents
Aluminum wire rod for semiconductor device bondingInfo
- Publication number
- JPS61179840A JPS61179840A JP60019755A JP1975585A JPS61179840A JP S61179840 A JPS61179840 A JP S61179840A JP 60019755 A JP60019755 A JP 60019755A JP 1975585 A JP1975585 A JP 1975585A JP S61179840 A JPS61179840 A JP S61179840A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- less
- wire
- wire rod
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 title claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 12
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract 5
- 229910052742 iron Inorganic materials 0.000 claims abstract 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract 3
- 239000000463 material Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 14
- 239000000956 alloy Substances 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052772 Samarium Inorganic materials 0.000 abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 abstract description 2
- 229910052688 Gadolinium Inorganic materials 0.000 abstract description 2
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910001122 Mischmetal Inorganic materials 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 16
- 230000007797 corrosion Effects 0.000 description 16
- 239000010953 base metal Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005491 wire drawing Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- BPPVUXSMLBXYGG-UHFFFAOYSA-N 4-[3-(4,5-dihydro-1,2-oxazol-3-yl)-2-methyl-4-methylsulfonylbenzoyl]-2-methyl-1h-pyrazol-3-one Chemical compound CC1=C(C(=O)C=2C(N(C)NC=2)=O)C=CC(S(C)(=O)=O)=C1C1=NOCC1 BPPVUXSMLBXYGG-UHFFFAOYSA-N 0.000 description 1
- 241001091551 Clio Species 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
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- H01L2924/01013—Aluminum [Al]
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体チップ電極と外部リード部の接続に用い
るボンディング用アルミニウム線材に関し、特にポール
ボンディング性とボンデイフグ後の強度を改善し、超音
波圧接によるウェッジボンディングは勿論、熱圧着によ
るボールボンディングに使用できるアルミニウム線材を
提供するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an aluminum wire rod for bonding used for connecting semiconductor chip electrodes and external lead parts, and in particular improves pole bonding properties and strength after bonding, and improves ultrasonic pressure welding. The present invention provides an aluminum wire material that can be used not only for wedge bonding by the method but also for ball bonding by thermocompression bonding.
一般にボンディング用線材を用いた半導体チップ電極と
外部リード部の接続には、超音波接続によるウェッジボ
ンディングと熱圧着によるポールボンディングが用いら
れている。ウェッジボンディングはボンディング用線材
の端部側面を超音波エネルギーにより押潰して半導体チ
ップ電極と外部リード部に接続するもので、ポールボン
ディングに比べて接続に要する時間が２〜３倍も長く、
ボンディングに方向性を有し、配線の方向が平面内の方
向に限られ、放射状に配置した半導体素子の接続には使
用し難いものである。一方ポールボンディングはボンデ
ィング用線材の一端を電気的又は酸素−水素炎で溶融し
、その際形成されるボールに超音波を付加しながら押潰
して２５０〜４００℃の温度に加熱した半導体チップ電
極に接続し、他端を超音波接続により外部リード部に接
続するものである。Generally, wedge bonding using ultrasonic bonding and pole bonding using thermocompression bonding are used to connect semiconductor chip electrodes and external lead portions using bonding wires. Wedge bonding involves crushing the end side of the bonding wire using ultrasonic energy to connect it to the semiconductor chip electrode and external lead. Compared to pole bonding, the connection time is two to three times longer.
Bonding has directionality, and the wiring direction is limited to in-plane directions, making it difficult to use for connecting semiconductor elements arranged radially. On the other hand, in pole bonding, one end of the bonding wire is melted electrically or with an oxygen-hydrogen flame, and the ball formed at that time is crushed while applying ultrasonic waves to a semiconductor chip electrode heated to a temperature of 250 to 400 degrees Celsius. and the other end is connected to the external lead part by ultrasonic connection.
このようなボンディング用線材には次のような特性が要
求されている。Such bonding wires are required to have the following characteristics.
（１）引張強さが大きいこと。(1) High tensile strength.
（２）耐食性が優れていること。(2) Excellent corrosion resistance.
（３）ポールボンディングではボール形状が真球に近く
、その大きさにバラツキが少ないこと。(3) In pole bonding, the ball shape is close to a true sphere and there is little variation in its size.
（４）ポールボンディングでは耐熱性が高く、線材とボ
ールの間にくびれが起らないこと。(4) Pole bonding has high heat resistance and no constriction occurs between the wire and the ball.
（５）ボンディング後の強度が高いこと。(5) High strength after bonding.
（６’） ６０μｍ以下の極細線まで伸線加工性が良い
こと。(6') Good wire drawability up to ultra-fine wires of 60 μm or less.
従来ボンディング用線材にはＡｌｌ線、Ａｌ１合金線、
ＡＺ−Ｓ＋合金線、 Ａｐ−Ｎ＋合金線。Conventional bonding wires include All wire, Al1 alloy wire,
AZ-S+ alloy wire, Ap-N+ alloy wire.
Ａ ｆ−ＭＱ合金線等が用いられている。A f-MQ alloy wire etc. are used.
Ａｌｌ線やへ〇合金線はコストが高く、一方半導体チツ
ブ電極はほとんどＡｌ又はＡｌ合金で造られているため
、Ａｌｌ線やＡｌ１合金線を用いて接続すると、後工程
の加熱により接合面に金属間化合物を生成して脆くなり
、信頼性の面でのＡｌ合金線を用いた場合よりも劣る欠
点がある。またＡＪ２−８ｉ合金線は前記（１）、（２
）。All wires and aluminum alloy wires are expensive, while most semiconductor chip electrodes are made of aluminum or aluminum alloys, so if you connect using aluminum wires or aluminum alloy wires, metal will form on the joint surface due to heating in the post-process. This wire has the disadvantage that it is inferior to the case where an Al alloy wire is used in terms of reliability because it forms intercalary compounds and becomes brittle. In addition, the AJ2-8i alloy wire is
).
（３）、（４）、（５）の面で劣り、熱圧着には使用で
きないものであり、Ａ、ｅ−Ｎｉ合金線は前記（１）及
び（５）の面で劣り、ｌｅ−Ｍ９合金線は前記（３）及
び（４）の特性が劣るものである。It is inferior in terms of (3), (4), and (5) and cannot be used for thermocompression bonding, and A, e-Ni alloy wire is inferior in terms of (1) and (5), and le-M9 The alloy wire is inferior in the characteristics (3) and (4) above.
本発明はこれに鑑み種々研究の結果、前記特性を満足し
、超音波圧接によるウェッジポンディグは勿論、熱圧着
によるポールボンディングにも使用できる半導体素子ボ
ンディング用アルミニウム線材を開発したものである。In view of this, as a result of various studies, the present invention has developed an aluminum wire material for semiconductor element bonding that satisfies the above characteristics and can be used not only for wedge bonding by ultrasonic pressure welding but also for pole bonding by thermocompression bonding.
即ち本発明線材の一つは、Ｎｉ ０．０５〜２．ＯＷ
【％（以下にｗｔ％を単に％と略記）、１ｙｌｎ０．５
〜３．０％、 ３ｉ ０．０２％以下、ｌ：ｅｏ、０２
％以下。That is, one of the wire rods of the present invention has Ni 0.05 to 2. OW
[% (hereinafter wt% is simply abbreviated as %), 1yln0.5
~3.0%, 3i 0.02% or less, l:eo, 02
%below.
Ｃｕ０．０３％以下を含み、残部Ａｌからなることを特
徴とするものである。It is characterized by containing 0.03% or less of Cu, with the remainder being Al.
また本発明線材の他の一つは、Ｎｉ ０．０５〜２．
０％、 Ｍｎ ０．５〜３．０％、 ３ｉ ０．０２
％以下、Ｆｅｄ、０２％以下、ＣＬＩｏ、０３％以下、
Ｔｉ０．５％以下、ＢＯ３１％以下を含み、残部Ａｌか
らなることを特徴とするものである。Another one of the wire rods of the present invention is Ni 0.05 to 2.
0%, Mn 0.5-3.0%, 3i 0.02
% or less, Fed, 02% or less, CLIo, 03% or less,
It is characterized by containing 0.5% or less of Ti, 31% or less of BO, and the balance consisting of Al.
また本発明線材の更に他の一つは、Ｎ ｉｏ、０５〜２
．０％、 １ｙｌｎ ０．５〜３．０％、Ｓｉ０．０２
％以下、Ｆｅｄ、０２％以下、Ｃｕ０．０３％以下、Ｔ
ｉ０．５％以下、Ｂ ００１％以下を含み、Ｚｒ、希土
類元素の何れか１種又は２種以上を合計１．０ｗｔ％以
下と、Ｓｎ、Ｉｎ、Ｓｂの何れか１種又は２種以上を合
計０．５％以下を含む、残部Ａｌからなることを特徴と
するものである。Further, another one of the wire rods of the present invention is N io, 05-2
．． 0%, 1yln 0.5-3.0%, Si0.02
% or less, Fed, 0.02% or less, Cu0.03% or less, T
Contains 0.5% or less of i, 001% or less of B, a total of 1.0wt% or less of any one or more of Zr and rare earth elements, and one or more of Sn, In, and Sb. It is characterized by comprising a total of 0.5% or less, with the balance being Al.
本発明においてＮｉの添加はポールボンディングにおけ
るボール形状を真球に近くし、耐熱性を高めて線材とボ
ール間のくびれを起りにくくし、ボンディング後の強度
を増大させるためであり、Ｎ１含有量を０．０５〜２．
０％と限定したのは、０．０５％未満では十分な耐熱性
が得られず、線材とボール間にくびれが起り易いばかり
か、ボンディング後の強度が低下し、２．０％を越える
と線材の耐食性が低下するためである。In the present invention, the purpose of adding Ni is to make the ball shape in pole bonding close to a true sphere, increase heat resistance, make constriction between the wire rod and ball less likely to occur, and increase strength after bonding. 0.05~2.
The reason why it is limited to 0% is that if it is less than 0.05%, sufficient heat resistance cannot be obtained, and constriction is likely to occur between the wire and the ball, and the strength after bonding will decrease, and if it exceeds 2.0%, This is because the corrosion resistance of the wire decreases.
Ｍｎの添加は耐食性を低下させることなく引張強さを改
善するためであり、Ｍｎ含有量を０．５〜３．０％と限
定したのは、０．５％未満では十分な改善効果が得られ
ず、３．０％を越えると加工硬化が著しく、線材の伸線
加工が困難となるためである。The purpose of adding Mn is to improve tensile strength without reducing corrosion resistance, and the reason why the Mn content is limited to 0.5 to 3.0% is that less than 0.5% does not provide a sufficient improvement effect. This is because if it exceeds 3.0%, work hardening will be significant, making it difficult to draw the wire.
また３ｉ含有ａを０．０２％以下、Ｆｅ含有量を０．０
２％以下、Ｃ０含有量を０．０３％以下と限定したのは
、これ等元素は不純物としてＡｌ地金に含まれ、強度向
上に有効なるも耐食性を著しく低下する。そこでこれ等
元素の含有量の少ない八（地金を選択使用することによ
り３ｉ含有量を０．０２％以下、Ｆｅ含有量を０．０２
％以下、 Ｃｕ含有最を０．０３％以下に抑える必要が
あり、何れかがこれを越えると耐食性が低下するばかり
か、ボール形状も悪くなるところからこれ等元素の含有
間は何れも０．０１％以下に抑えることが望ましい。In addition, the 3i content a is 0.02% or less, and the Fe content is 0.0%.
The reason for limiting the C0 content to 2% or less and 0.03% or less is that these elements are contained in the Al base metal as impurities, and although they are effective in improving strength, they significantly reduce corrosion resistance. Therefore, by selectively using metals with low content of these elements, the 3i content can be reduced to 0.02% or less, and the Fe content can be reduced to 0.02%.
% or less, it is necessary to suppress the Cu content to 0.03% or less, and if any of these elements exceeds this, not only will the corrosion resistance deteriorate, but the ball shape will also deteriorate, so the content of these elements must be kept at 0.03% or less. It is desirable to suppress it to 0.01% or less.
次に上記ＡＪＩ！−Ｎｉ −Ｍｎ −８ｉ −Ｆｅ −
ＣＬＩ合金に、更にＴｉ及びＢの添加は、同時に添加す
ることにより鋳塊の結晶粒を微細化し、線材の品質を安
定化させるためであり、Ｔｉ含有量を０．５％以下、Ｂ
含有量０．１％以下と限定したのは、これを越えて含有
すると粗大な第２相が晶出し、伸線加工困難にするため
である。Next is the above AJI! -Ni -Mn -8i -Fe -
The purpose of adding Ti and B to the CLI alloy is to refine the crystal grains of the ingot and stabilize the quality of the wire rod by adding Ti and B at the same time.
The reason why the content is limited to 0.1% or less is that if the content exceeds this, a coarse second phase will crystallize, making wire drawing difficult.
また上記Ａ１−Ｎｉ −Ｍｎ −８ｉ −Ｆｅ −ｃｕ
−ｒ；−８合金に、更にＺｒ、希土類元素の何れか１
種又は２種と、３ｎ、ｉｎ、３ｂの何れか１種又は２種
以上の添加は、ボンディング後の強度と耐食性を高める
ためである。しかしてＺｒ、希土類元素の１種又は２種
以上の合計含有量を１．０％以下と限定したのは、これ
等元素はＮ１との相開効果によりボンディング後の強度
を一層高めることができるも、これを越えて含有すると
第２相を晶出し、伸線加工が著しく困難となるためであ
り、Ｓｎ、Ｉｎ、Ｓｂの何れか１種又は２種以上の合計
含有量を０．５％以下と限定したのは、これ等元素はＭ
ｎとの相開効果により耐食性を一層高めるも、これを越
えて含有すると第２相を晶出し、伸線加工が著しく困難
となるためである。In addition, the above A1-Ni-Mn-8i-Fe-cu
-r:-8 alloy, and any one of Zr and rare earth elements
The purpose of adding one or more of 3n, in, and 3b is to improve the strength and corrosion resistance after bonding. However, the reason why we limited the total content of one or more of Zr and rare earth elements to 1.0% or less is that these elements can further increase the strength after bonding due to the phase opening effect with N1. This is because if the content exceeds this amount, a second phase will crystallize, making wire drawing extremely difficult. The reason for limiting it to the following is that these elements are M
Although the corrosion resistance is further improved due to the phase opening effect with n, if the content exceeds this value, a second phase will crystallize, making wire drawing extremely difficult.
尚本発明において希土類元素としてはセリウム族（Ｌａ
、 Ｃｅ 、 Ｐｒ 、 Ｎｄ 、 Ｐｍ 、 Ｓｍ
）及びイツトリウム族（Ｓｃ 、Ｙ、Ｅｕ 、Ｇｄ
。In the present invention, rare earth elements include cerium group (La
, Ce, Pr, Nd, Pm, Sm
) and the yttrium group (Sc, Y, Eu, Gd
.
Ｔｂ 、 ｏｙ 、 Ｈｏ 、 Ｅｒ 、 Ｔｍ 、
Ｙｂ 、 Ｌｕ ）であり、一般にはＬａ 、Ｃｅ 、
Ｙ、Ｓｍ 、Ｇｄ又はミツシュメタル（希望土類元素の
混合物、以下ＭＭし略記）を用いるとよい。Tb, oy, Ho, Er, Tm,
Yb, Lu), and generally La, Ce,
It is preferable to use Y, Sm 2 , Gd, or Mitsushi metal (mixture of desired earth elements, hereinafter abbreviated as MM).
また本発明線材は上記合金組成からなり、何れもＡｌ地
金中に含まれる上記元素以外の不純物元素は、線材の耐
食性及びボール形状を悪くするため、できるだけ少量に
抑える必要があり、これ等不純物元素の合計含有量を０
．０１％以下、更にはｏ、ｏｏｓ％以下とすることが望
ましい。このためには使用するＡ１地金には純度９９．
９５％以上で上記合金元素以外の不純物元素の少ないも
のを選択使用するか、又は純度９９．９９％以上、望ま
しくは純度９９．９９５％以上の高純度Ａｌ地金を用い
るとよい。In addition, the wire rod of the present invention has the above-mentioned alloy composition, and impurity elements other than the above-mentioned elements contained in the Al base metal must be kept as small as possible because they impair the corrosion resistance and ball shape of the wire rod. The total content of elements is 0
．． It is desirable that the content be 0.01% or less, and more preferably o, oos% or less. For this purpose, the A1 metal used has a purity of 99.
It is preferable to select and use an Al base metal with a purity of 95% or more and a small amount of impurity elements other than the above-mentioned alloying elements, or to use a high-purity Al base metal with a purity of 99.99% or more, preferably 99.995% or more.
純度９９，９９９％のへ純度へ（地金をを溶解し、これ
に純度９９．９９９％のＡｌと純度９９．９９％のＮ：
、純度９９．９９％のＭｎ、純度９９．９９％のＦ０．
純度９９．９９９％のＳｉ、純度９９．９９９％のＣＬ
Ｉ、純度９９．９％のＴｉ、純度９９％の８．純度９９
．６％のＺｒ、Ｃｅ４０％以上のＭＭ、純度９９．９％
のＣ０．純度９９．９％のｌａ、純度９９．９％のＮｄ
、純度９９．９９９％の３ｎ、純度９９，９９９％のｌ
ｎ及び９９．９９９９％のｓｂを用いて作成した母合金
を添加して、第１表に示す組成の合金を溶製し、これを
２５Ｍ角、長さ１５０５１１Ｉの鋳型に鋳造した。この
鋳塊を５５０℃の温度で４８時間ソーキングした後、熱
間溝゛ロール圧延により直径５＃ｌ１１１の線材とし、
これに冷開伸線加工と３６０℃、２時間の中間焼鈍を繰
返して直径３０μｍの極細線とし、３６０℃の温度で最
終焼鈍を行なってボンディング用アルミニウム線材とし
た。To a purity of 99,999% (dissolve the base metal, add 99.999% purity Al and 99.99% purity N:
, Mn with a purity of 99.99%, F0. with a purity of 99.99%.
99.999% pure Si, 99.999% pure CL
I, 99.9% pure Ti, 99% pure 8. Purity 99
．． 6% Zr, Ce40% or more MM, purity 99.9%
C0. 99.9% purity la, 99.9% purity Nd
, 3n with a purity of 99.999%, l with a purity of 99.999%
A master alloy prepared using n and 99.9999% sb was added to produce an alloy having the composition shown in Table 1, and this was cast into a 25M square mold with a length of 150511I. After soaking this ingot at a temperature of 550°C for 48 hours, it was made into a wire rod with a diameter of 5#l111 by hot groove roll rolling.
This was repeatedly subjected to cold open wire drawing and intermediate annealing at 360° C. for 2 hours to obtain an ultrafine wire with a diameter of 30 μm, and final annealing was performed at a temperature of 360° C. to obtain an aluminum wire for bonding.
これ等線材について伸線加工性を比較すると共に引張強
さ及び伸びを測定し、更に通常の手動式ボールボンディ
ング装置を用いて線材の一′端にＡｒガスを吹き付けな
がらアークにより溶解し、第１図に示すように線材（１
）の一端にボールを形成し、これについてボール（１）
の真球ａＨ／Ｄ及びくびれ率ｄｏ／ｄ （ただしト（
はボール縦方向の直径、Ｄはボールの横方向の直径、ｄ
は線材の直径、 ｄｏはくびれ部の直径）を測定し、続
いてボールを半導体チップ電極に熱圧着し、線材の他端
を外部リード部に超音波圧接してボンディング後の線材
の強度を測定した。We compared the drawability of these wire rods, measured their tensile strength and elongation, and melted them using an arc while blowing Ar gas onto one end of the wire using an ordinary manual ball bonding device. As shown in the figure, the wire rod (1
) and form a ball at one end of the ball (1) about this.
True sphere aH/D and constriction rate do/d (however, t(
is the diameter of the ball in the longitudinal direction, D is the diameter of the ball in the lateral direction, d
is the diameter of the wire, do is the diameter of the constriction), then the ball is thermocompressed to the semiconductor chip electrode, the other end of the wire is ultrasonically welded to the external lead, and the strength of the wire after bonding is measured. did.
また上記冷開伸線加工中、直径１．Ｏ＃ＩＩＩの線材よ
り試料を採取し、これについてＪ（３２３７１に基づき
４日間塩水噴霧を行なって耐食性を調べた。Also, during the above cold open wire drawing process, the diameter 1. A sample was taken from the O#III wire rod and subjected to salt water spraying for 4 days based on J (32371) to examine its corrosion resistance.
これ等の結果を第２表に示す。These results are shown in Table 2.
第１表及び第２表から明らかなように従来線材Ｎ０６３
は耐食性が劣るばかりか、ボールが形成されず、熱圧着
が不可能であり、従来線材Ｎ０６４は良好な耐食性を示
すも真球度が低く、くびれ率も大きく、ボンディング後
の強度も低く、従来線材Ｎα６４は耐食性及び真球度は
良好なるも、ボンディング後の強度が低い。これに対し
本発明線材Ｎα１〜４４は真球に近いボールが形成され
、くびれも小さく、ボールボンディングが可能であるこ
とが判る。また耐食性はＮｉ含有量の多イ本Ｒ明線材Ｈ
ａ ４．Ｓｉ 、Ｆ０．Ｃｕ及び不純物の合計含有量が
多い本発明線材ＮＱ９〜１２でやや劣るも、その他は良
好な耐食性を示し、特にＡｌ二Ｎｉ −Ｍｎ −８ｉ
−Ｆｅ−ＣＬＩ系ｔ、：Ｔ’ｉ及びＢを添加した本発明
線材順１３〜１７は引張強ざ、伸びボンディング後の強
度に改善が見られ、更にＺｒ、希土類元素の何れか１種
又は２種以上と、Ｓｎ、Ｉｎ、Ｓｂの何れか１種又は２
種以上を添加した本発明線材ＮＱ１８〜４４ではボンデ
ィング後の強度が改善されていることが判る。As is clear from Tables 1 and 2, conventional wire N063
Not only does it have poor corrosion resistance, but it also does not form a ball, making thermocompression bonding impossible. Conventional wire N064 shows good corrosion resistance, but its sphericity is low, its constriction rate is large, and its strength after bonding is low. Although the wire Nα64 has good corrosion resistance and sphericity, its strength after bonding is low. On the other hand, it can be seen that the wire rods Nα1 to Nα44 of the present invention form balls that are close to true spheres, have small constrictions, and are capable of ball bonding. In addition, the corrosion resistance is improved due to the high Ni content.
a4. Si, F0. Although the present wire rods NQ9 to 12, which have a high total content of Cu and impurities, were slightly inferior, the others showed good corrosion resistance, especially Al2Ni-Mn-8i.
-Fe-CLI system t, :T'i and B are added to wire rods of the present invention in order 13 to 17. Improvements are seen in tensile strength and strength after stretch bonding, and furthermore, any one of Zr, rare earth elements or 2 or more types and any one or two of Sn, In, and Sb
It can be seen that the strength after bonding is improved in wire rods NQ18 to NQ44 of the present invention in which the above-mentioned species were added.
これに対し本発明線材の組成笥囲により外れる比較合金
Ｎα４５〜６２では伸線加工性、耐食性。On the other hand, comparative alloys Nα45 to 62, which differ from each other due to the composition of the wire rod of the present invention, have poor wire drawability and corrosion resistance.
ボンディングにおける真球度、ボンディング後の強度の
何れかが劣ることが判る。即ち、Ｎｉ含有量の少ない比
較合金Ｎ０４５及びＭｎ含有量の少ない比較線材Ｎ（１
４７ではボンディングにおける真球度が劣り、ボンディ
ング後の強度も低くなり１、Ｎｉ、３ｉ、ｌ”０．Ｃｕ
、その他不純物元素の含有量が多い比較線材ＮＱ４６．
４９〜５２では、耐食性が劣り、Ｔ； 、０．ｚｒ 、
希土類元素。It can be seen that either the sphericity during bonding or the strength after bonding is inferior. That is, comparative alloy N045 with a low Ni content and comparative wire N(1
47, the sphericity during bonding is poor and the strength after bonding is also low.1, Ni, 3i, l”0.Cu
, a comparative wire NQ46. with a high content of other impurity elements.
49 to 52, the corrosion resistance is poor, T;, 0. zr,
Rare earth elements.
Ｓｎ、Ｉｎ、Ｓｂ等の含有量の多い比較線材順４８、５
３〜６２では伸線加工性が悪く、３０μｍの極細線とす
ることができなかった。Comparative wire rods in order of high content of Sn, In, Sb, etc. 48, 5
3 to 62 had poor wire drawability and could not be made into an ultrafine wire of 30 μm.
このように本発明線材はボンディング線材に要求される
前記特性を満足し、ウェッジボンディングは勿論、ポー
ルボンディングに使用することができるもので、高価な
Ａｕ又はＡＩＪ合金線に代り、コストが安く、同等の性
能を示し、しかも接合面における金属間化合物の生成の
恐れもないなど、工業上顕著な効果を奏するものである
。As described above, the wire rod of the present invention satisfies the above characteristics required for bonding wire rods, and can be used not only for wedge bonding but also for pole bonding. It exhibits excellent industrial performance, and there is no fear of the formation of intermetallic compounds at the bonding surface.
第１図はポールボンディングにおけるボール真球度とく
びれ率の説明図である。
′二）FIG. 1 is an explanatory diagram of ball sphericity and constriction rate in pole bonding. 'two)
Claims (6)
０ｗｔ％、Ｓｉ０．０２ｗｔ％以下、Ｆｅ０．０２ｗｔ
％以下、Ｃｕ０． ０３ｗｔ％以下を含み、残部Ａｌからなる半導体素子ボ
ンディング用アルミニウム線材。(1) Ni0.05-2.0wt%, Mn0.5-3.
0wt%, Si0.02wt% or less, Fe0.02wt
% or less, Cu0. An aluminum wire material for semiconductor device bonding, containing 0.03 wt% or less and the remainder being Al.
の合計含有量が０．０１ｗｔ％以下である特許請求の範
囲第１項記載の半導体素子ボンディング用アルミニウム
線材。(2) The aluminum wire for semiconductor device bonding according to claim 1, wherein the total content of impurity elements other than Ni, Mn, Si, Fe, and Cu is 0.01 wt% or less.
ｗｔ％、Ｓｉ０．０２ｗｔ％以下、Ｆｅ０．０２ｗｔ％
以下、Ｃｕ０． ０３ｗｔ％以下、Ｔｉ０．５ｗｔ％以下、Ｂ０．１ｗｔ
％以下を含み、残部Ａｌからなる半導体素子ボンディン
グ用アルミニウム線材。(3) Ni0.5-2.0wt%, Mn0.5-3.0
wt%, Si0.02wt% or less, Fe0.02wt%
Below, Cu0. 03wt% or less, Ti0.5wt% or less, B0.1wt
% or less, with the remainder being Al.
不純物元素の合計含有量が０．０１ｗｔ％以下である特
許請求の範囲第３項記載の半導体素子ボンディング用ア
ルミニウム線材。(4) The aluminum wire for semiconductor device bonding according to claim 3, wherein the total content of impurity elements other than Ni, Mn, Si, Fe, Cu, Ti, and B is 0.01 wt% or less.
０ｗｔ％、Ｓｉ０．０２ｗｔ％以下、Ｆｅ０．０２ｗｔ
％以下、Ｃｕ０．０３ｗｔ％以下、Ｔｉ０．５ｗｔ％以
下、Ｂ０．１ｗｔ％以下を含み、Ｚｒ、希土類元素の何
れか１種又は２種を合計１．０ｗｔ％以下とＳｎ、Ｉｎ
、Ｓｂの何れか１種又は２種以上を合計０．５ｗｔ以下
を含む残部Ａｌからなる半導体素子ボンディング用アル
ミニウム線材。(5) Ni0.05-2.0wt%, Mn0.5-3.
0wt%, Si0.02wt% or less, Fe0.02wt
% or less, Cu 0.03 wt% or less, Ti 0.5 wt% or less, B 0.1 wt% or less, a total of 1.0 wt% or less of any one or two of Zr and rare earth elements, and Sn, In
An aluminum wire for bonding semiconductor elements, the balance being Al, containing one or more of Sb and Sb in a total amount of 0.5 wt or less.
類元素、Ｓｎ、Ｉｎ、Ｓｂ以外の不純物の合計含有量が
０．０１ｗｔ％以下である特許請求の範囲第５項記載の
半導体素子ボンディング用アルミニウム線材。(6) The semiconductor according to claim 5, wherein the total content of impurities other than Ni, Mn, Fe, Cu, Ti, B, Zr, rare earth elements, Sn, In, and Sb is 0.01 wt% or less. Aluminum wire material for element bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60019755A JPS61179840A (en) | 1985-02-04 | 1985-02-04 | Aluminum wire rod for semiconductor device bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60019755A JPS61179840A (en) | 1985-02-04 | 1985-02-04 | Aluminum wire rod for semiconductor device bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61179840A true JPS61179840A (en) | 1986-08-12 |
Family
ID=12008160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60019755A Pending JPS61179840A (en) | 1985-02-04 | 1985-02-04 | Aluminum wire rod for semiconductor device bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179840A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396236A (en) * | 1986-10-09 | 1988-04-27 | Sky Alum Co Ltd | Material for electrically conductive parts of electronic and electrical appliance |
| JP5159001B1 (en) * | 2012-09-03 | 2013-03-06 | 田中電子工業株式会社 | Aluminum alloy bonding wire |
| CN104711464A (en) * | 2015-02-10 | 2015-06-17 | 朱岳群 | Strength-controllable aluminum-nickel-rare earth alloy with anodizing and die casting functions |
| JP2016511529A (en) * | 2012-11-22 | 2016-04-14 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Aluminum alloy wire for bonding applications |
-
1985
- 1985-02-04 JP JP60019755A patent/JPS61179840A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396236A (en) * | 1986-10-09 | 1988-04-27 | Sky Alum Co Ltd | Material for electrically conductive parts of electronic and electrical appliance |
| JP5159001B1 (en) * | 2012-09-03 | 2013-03-06 | 田中電子工業株式会社 | Aluminum alloy bonding wire |
| KR101307022B1 (en) * | 2012-09-03 | 2013-09-11 | 타나카 덴시 코오교오 카부시키가이샤 | Aluminium alloy bonding wire |
| JP2016511529A (en) * | 2012-11-22 | 2016-04-14 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Aluminum alloy wire for bonding applications |
| CN104711464A (en) * | 2015-02-10 | 2015-06-17 | 朱岳群 | Strength-controllable aluminum-nickel-rare earth alloy with anodizing and die casting functions |
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