JP5159001B1 - Aluminum alloy bonding wire - Google Patents

Abstract

Wedge bonding wire that is soft during ultrasonic bonding, prevents chip cracking, and exhibits high-temperature strength after wiring.
In an aluminum alloy matrix having a composition comprising scandium (Sc) of 0.15 to 0.5% by mass and the balance of aluminum (Al) having a purity of 99.99% by mass or more, and forcibly dissolved in an aluminum alloy matrix. An aluminum alloy bonding wire having a cold drawn structure and a Vickers hardness of 21 to 30 Hv, and further strengthened by adding 0.01 to 0.2 mass% of zirconium (Zr). Since it is soft at the time of bonding, it joins without generating a chip | tip crack, Then, an aging heat processing is performed and a high temperature strength is improved.
[Selection] Figure 1

Description

The present invention relates to an aluminum alloy wiring material for joining an electrode on a semiconductor element used in a high temperature environment and an external electrode using an aluminum alloy fine wire, and in particular, in a high temperature environment such as an aircraft, an electric vehicle and a ship. The present invention relates to an aluminum alloy bonding wire to which the effect of Al ₃ Sc particles aged from high-purity aluminum (Al) in a semiconductor device used in the above-mentioned semiconductor device is applied.

  Bonding pads mounted on semiconductor elements such as silicon (Si) or silicon carbide (SiC) or gallium nitride (GaN) are mainly substrates such as aluminum (Al), copper (Cu), and nickel (Ni). used. The substrate may be used after being plated with a noble metal such as gold (Au) or silver (Ag) or nickel (Ni). These are collectively referred to as “aluminum pads” unless otherwise specified. An aluminum alloy fine wire using high-purity aluminum (Al) is used to ultrasonically bond the aluminum pad of this semiconductor element to a lead frame or the like because of its high conductivity of 60%. As the aluminum alloy fine wire, a round fine wire having a wire diameter of 50 to 500 μm is generally used, and an extra fine wire having a wire diameter of less than 50 μm or a wire having a wire diameter of more than 500 μm is rarely used, and these fine wires are crushed. A flat rectangular wire (tape) may also be used for a semiconductor device as an aluminum alloy thin wire.

When using such an aluminum alloy fine wire using high-purity aluminum (Al) in a high-temperature environment (atmosphere), particularly when used as a wiring material for aircraft, automobiles, ships, etc., high-temperature reliability There was a problem that it would be difficult to ensure.
Therefore, as a wiring material having a relatively small specific resistance, a relatively high mechanical strength, and excellent heat resistance, there is an aluminum alloy in which scandium (Sc) is dissolved in the following aluminum (Al).
First, in Japanese Patent Laid-Open No. 7-316705 (Patent Document 1 to be described later), “comprising about 0.1 to 0.3% by weight of Sc and the balance being Al and about 0.05% by weight or less of impurities. Wiring material characterized by the above-mentioned is disclosed, and "pure aluminum having a purity of 99.95% or more is used, and about 0.1 to about 0.3% by weight of scandium (Sc ”(Paragraph 0012)” and “plastic processing was performed at a reduction rate of 50% and heat treatment was performed at 400 to 500 ° C. for about 1 hour (paragraph 0016)”.
Further, in Japanese Patent Laid-Open No. 2001-348637 (Patent Document 2 described later), “in a pure Al matrix having a purity of 99.95% or more, 0.05 to 0.3% Sc and 0.1% by weight. An aluminum alloy material containing ˜0.4% Zr (Claim 1, etc.) ”is disclosed, and“ plastic working (cold working) with a cross-section reduction rate of 80% or more ”is performed. (The same paragraph 0024) "" Conductivity of 60% IACS or more, tensile strength of 200MPa or more, and residual tensile strength at 280 ° C of 90% or more " Paragraph 0011) ”is obtained.

However, when such an aluminum alloy fine wire is ultrasonically bonded to an aluminum pad electrode containing Al as a main component, since the mechanical strength is high and chip cracking occurs, such an aluminum alloy fine wire has not been put into practical use. In particular, when the wire diameter is relatively large, such as 50 to 500 μm, the problem of chip cracking cannot be avoided.

On the other hand, aluminum alloy thin wires require the use of semiconductors that require heat resistance of 100 to 200 ° C., especially power semiconductors used in air conditioners, solar power generation systems, hybrid vehicles, electric vehicles, and the like. Is expected to expand further in the future.
The operating condition of such a power semiconductor element is higher than that of a normal semiconductor element. For example, in a power semiconductor used for in-vehicle use, an aluminum alloy fine wire needs to withstand a junction temperature of usually 100 to 150 ° C. at the maximum. A pure aluminum alloy fine wire made only of high-purity aluminum (Al) that is easily softened in such a temperature range has not been put into practical use in an apparatus used in a high-temperature environment.

JP-A-7-316705 JP 2001-348637 A

  The present invention relates to an aluminum alloy composed of an aluminum alloy thin wire that is soft to a semiconductor chip and is not softened in a high-temperature environment after wiring, as is the case with a pure aluminum alloy thin wire composed of only high-purity aluminum (Al) during wiring. The problem to be solved is to provide a wiring material.

In order to solve the above-mentioned problems, the present inventors have conceived to utilize that scandium (Sc) hardly contributes to improvement in strength unless it is aged from a state of being dissolved in aluminum (Al).
That is, an aluminum (Al) alloy wiring material containing a predetermined amount of scandium (Sc) is subjected to a solution treatment for forcibly dissolving all fine Sc precipitates by an intermediate heat treatment, and then drawn to a desired wire diameter. It was confirmed that age hardening due to Sc can be suppressed by performing the tempering heat treatment at a temperature and a condition in which Sc does not precipitate finely.
In this state, since the aluminum alloy wiring material is soft and easily deformed plastically, the aluminum alloy thin wire having the above composition that has been cold drawn to the desired wire diameter is ultrasonically bonded to the aluminum pad in the same manner as the pure aluminum alloy thin wire. Then, it can be wired to a predetermined circuit.
Further, it was confirmed that the same effect can be obtained by adding a certain amount of zirconium (Zr) in addition to scandium (Sc). Zirconium (Zr) addition exhibits the same effect as scandium (Sc) in an aluminum (Al) alloy wiring material, and has the effect of improving temporal stability against age hardening temperature history.

When the aluminum alloy thin wire thus solution-treated is subjected to an aging heat treatment after wiring, the mechanical strength is increased by Al ₃ Sc particles precipitated from the aluminum (Al) matrix as described in Patent Documents 1 and 2 described above. To do. In addition, since the consistency between the Al ₃ Sc particles and the aluminum (Al) matrix is good, it has been found that the Al ₃ Sc particles are hardly coarsened even under repeated high-temperature environments.

One of the aluminum alloy wiring materials for connecting semiconductor devices used in the high temperature environment of the present invention is aluminum having a scandium (Sc) content of 0.15 to 0.5% by mass and the balance of 99.99% by mass or more. It is an aluminum alloy having a composition made of (Al), having a recrystallized structure in an aluminum alloy matrix forcibly dissolved, and having a Vickers hardness of 21 to 30 Hv.

Another example of the aluminum alloy wiring material for connecting a semiconductor device used in the high temperature environment of the present invention is that scandium (Sc) is 0.15 to 0.5 mass% and zirconium (Zr) is 0.00. 01 to 0.2% by mass (however, zirconium (Zr) is less than half the amount of scandium (Sc)) and the balance is aluminum (Al) having a purity of 99.998% by mass or more. It is an aluminum alloy having a recrystallized structure in the formed aluminum alloy matrix and having a Vickers hardness of 21 to 30 Hv.

The above-mentioned two types of aluminum alloy wiring materials for connecting semiconductor devices used in the high temperature environment of the present invention are subjected to aging heat treatment in the temperature range of 200 ° C. to 450 ° C. in advance of subsequent processing and processing steps after wiring. You can also keep it. This is because after the wiring, the shape of the aluminum alloy wiring material does not change, so that the semiconductor chip is not cracked even if the mechanical strength is increased. In addition, since the difference in thermal expansion coefficient from the aluminum pad is small, there is no progress of cracks at the joint interface due to repeated thermal expansion and contraction.

In the present invention, when the purity of aluminum (Al) is 99.998% by mass or more, it has almost the same Vickers hardness as an aluminum alloy having a purity of 99.999% by mass or more.

Moreover, in this invention, since the addition amount of scandium (Sc) is 0.3 mass% or less, since scandium (Sc) can be uniformly forcibly dissolved in an aluminum matrix, it is preferable. Uniform forced solid solution can be determined from the distribution of Al ₃ Sc particles precipitated from the aluminum (Al) matrix. In addition, it is good to perform forced solid solution over several hours in 580 to 630 degreeC vicinity near melting | fusing point of aluminum (Al).

In the present invention, the aluminum alloy wiring material for connecting a semiconductor device before aging heat treatment can be subjected to temper heat treatment after cold drawing to a desired wire diameter in a range of 50 μm to 500 μm or the like. it can. The continuously drawn aluminum alloy fine wire is subjected to a tempering heat treatment with a certain tension applied. The constant tension is basically applied between the outlet of the final diamond die and the inlet of the take-up spool in continuous drawing, but the vibration of other processes is not transmitted to the aluminum alloy finely with a dancer roller etc. It is kept particularly constant between the tempering heat treatment step and the cooling step, and a predetermined heat energy can be applied to the aluminum alloy fine wire by the set heat treatment temperature and heat treatment section.
By this tempering heat treatment, the cold drawn structure by cold drawing after forced solid solution becomes a recrystallized structure having mechanical properties suitable for wire bonding.
Heating methods for the tempering heat treatment include heating by an electric furnace, energization heating, heating by light irradiation, and steam heating. This is because the tempering heat treatment is performed for several seconds to several tens of seconds, so that Al ₃ Sc particles do not precipitate from the aluminum (Al) matrix. Similarly, even if the aluminum alloy wiring material subjected to the tempering heat treatment is ultrasonically bonded to the aluminum pad, the aluminum alloy wiring material does not harden and the semiconductor element does not crack.

As described above, the aluminum alloy wiring material in which scandium (Sc) is uniformly and forcibly dissolved in the aluminum matrix does not cause chip cracking as in the case of pure aluminum, and can easily form a loop to form a semiconductor device. Can be wired.
By performing an aging heat treatment after these wirings, Al ₃ Sc particles are precipitated from the aluminum (Al) matrix, and the mechanical strength as an Al—Sc binary alloy can be exhibited. These aging heat treatments may be performed, for example, before resin sealing, due to the resistance to thermal history of the semiconductor device after wiring formation.
The material of the pad is mainly aluminum (Al) and aluminum (Al) alloy, but may be copper (Cu) or nickel (Ni) having good ultrasonic bonding property with the aluminum alloy wiring material, and gold (Au). It is also possible to coat a precious metal such as

According to the aluminum alloy wiring material of the present invention, wiring can be made softly and freely like a pure aluminum thin wire before wiring, and ultrasonic bonding can be performed with an aluminum pad in the same manner as a pure aluminum alloy thin wire.
On the other hand, after wiring, Al ₃ Sc particles can be precipitated from an aluminum (Al) matrix, thereby enhancing the mechanical strength of the wiring. Since the amount of scandium (Sc) added is small, and the consistency between the precipitate and the aluminum (Al) matrix is good, even if Al ₃ Sc particles are precipitated, cracks due to mechanical strain occur from the bonding interface. There is no. Moreover, the deposited Al ₃ Sc particles hardly become coarse even under repeated high-temperature environments in power semiconductors such as electric vehicles. This effect is better exhibited by the 5N aluminum alloy fine wire than the 4N aluminum alloy fine wire, but when priority is given to the price, the 4N8 purity aluminum alloy fine wire is better, and the aluminum alloy wiring material is suitable for power cycle semiconductors. .

FIG. 1 shows the rate of change in shear strength between the aluminum alloy fine wire and the pure aluminum fine wire of the present invention.

  Examples of the present invention will be described below.

Al-Sc 0.15%, Al-Sc 0.2%, Al-Sc 0.3%, and Al-Sc made of 99.99% pure aluminum (Al) and 99.9% pure scandium (Sc) Four types of Al—Sc alloys with 0.5% Sc were melted, and an aluminum alloy ingot with a diameter of 300 mm was cast by continuous casting.
This ingot was rolled by groove rolling and then drawn to produce an aluminum alloy strand having a diameter of 5 mm. Subsequently, this strand was quenched in water after solution heat treatment at 630 ° C. for 120 minutes. Then, after performing continuous wire drawing using a diamond die in water to a diameter of 0.5 mm, tempering heat treatment was performed at 620 ° C. × 1 minute, followed by water cooling.
This sample was referred to as Example 1 (Samples 1 to 4). This Example 1 was measured with a Micro Vickers hardness meter of model MVK-G3 manufactured by Akashi. Table 1 shows the measured hardness.
100 pieces of Example 1 were ultrasonically bonded on an Al-1.0% Si film (thickness 4 μm) on a Si chip (thickness 0.5 mm) under the following conditions.

(Ultrasonic bonding conditions)
The aluminum alloy fine wire had a wire diameter of 0.5 mm, a loop length of 10 mm, and a loop height of 1.5 mm.
Using an REB07 type fully automatic bonder manufactured by Ultrasonic Industry Co., Ltd., ultrasonic bonding of an aluminum alloy fine wire was performed on a Si chip.
The bonding condition is a frequency of 120 kHz, and the load and ultrasonic conditions are arbitrarily adjusted so that the collapse width of the first joint is 1.3 times the wire diameter, and the same conditions are applied to all 100 samples. First bond and second bond ultrasonic bonding was performed. The carbide tool and the bonding guide used were those manufactured by Ultrasonic Industry Co., Ltd., which matched the wire size.
Next, an aging treatment was performed on Example 1 of the joined aluminum alloy fine wire. The aging treatment condition is 300 ° C. for 2 hours.
Next, the following test was performed on Example 1 of the joined aluminum alloy fine wire.
The results are shown in Table 1.

(Thermal shock test)
As the thermal shock test apparatus, a small thermal shock apparatus TSE-11 manufactured by Espec was used, and the test was repeated 10,000 times at high temperature side: + 200 ° C. and low temperature side: −50 ° C. for 3 minutes each.
About the result which gave the damage to the wire junction part by the thermal shock test, the degree of damage was evaluated by the following shear strength test.

(Shear strength test)
In the shear test, the DAGE 2400 model was used to measure the shear strength of the first joint after completing 1,000, 2,000, 5,000, and 10,000 times, and compared with the initial strength of 0 times. Asked. This graph is shown in FIG. 1 in comparison with Example 1 (No. 4) and the conventional example.
The number of times that the ratio of the initial shear strength to the shear strength ratio after the repetition is reduced to 20% (0.8) from the initial value is less than twice the conventional number, and x is twice or more. The test height was 5 μm, and the test speed was 500 μm / second.

(Chip crack observation test)
After bonding, the Al-0.1% Si pad was dissolved in a 20% NaOH solution, and the presence of chip cracking was observed at a magnification of 100 using an optical microscope (Olympus measuring microscope, STM6). . Observation was made at 10 locations, and if even one chip crack occurred, it was marked as x, and if none occurred, it was marked as ◯.

Al-Sc 0.2% -Zr 0.1% alloy composed of aluminum (Al) with a purity of 99.99% by mass, scandium (Sc) with a purity of 99.9% by mass and zirconium (Zr) with a purity of 99.9% by mass, And an Al—Sc 0.5% -Zr 0.25% alloy was made in the same manner as in Example 1, and an aluminum alloy fine wire having a diameter of 0.5 mm was prepared as Example 2 (Samples 5 and 6).
Next, these samples were ultrasonically bonded and subjected to an aging treatment under the same conditions as in Example 1.
About these samples, the said test was done on the conditions similar to Example 1. FIG. The results are shown in Table 1.

In the same manner as in Example 1, an Al-Sc 0.3% alloy composed of aluminum (Al) with a purity of 99.99 mass% and scandium (Sc) with a purity of 99.9 mass% has a diameter of 0.1 mm and 0.3 mm. An aluminum alloy fine wire was prepared and used as Example 3 (Samples 7 and 8).
Next, these samples were ultrasonically bonded and subjected to an aging treatment under the same conditions as in Example 1.
About these samples, the said test was done on the conditions similar to Example 1. FIG. The results are shown in Table 1.

In the same manner as in Example 1, an aluminum alloy having a diameter of 0.5 mm was prepared from an Al—Sc 0.15% alloy composed of aluminum (Al) having a purity of 99.998% by mass and scandium (Sc) having a purity of 99.9% by mass. A thin line was created and used as Example 4 (Sample 9).
Next, these samples were ultrasonically bonded and subjected to an aging treatment under the same conditions as in Example 1.
About these samples, the said test was done on the conditions similar to Example 1. FIG. The results are shown in Table 1.

Comparative example

In the same manner as in Example 1, the diameter was made of Al-Sc 0.1% Al-Sc and 0.8% alloy composed of 99.99% by mass of aluminum (Al) and 99.9% by mass of scandium (Sc). A 0.5 mm aluminum alloy fine wire was prepared and used as Comparative Examples 1 and 2.
Next, this sample was subjected to ultrasonic bonding and aging treatment under the same conditions as in Example 1.
About these samples, the said test was done on the conditions similar to Example 1. FIG. The results are shown in Table 1.
[Conventional example]

（注１）Ａｌ原材料の純度は実施例１〜３（サンプルNo.１〜８）及び比較例１，２：９９．９９質量％、実施例５（サンプルNo.９）：９９．９９８質量％。
従来例Ａｌ原材料の純度は９９．９９５質量％
（注２）実施例の溶体化後の冷却方法：水冷 Purity 99.995 mass% (5N) High-purity Al is melted and cast into a 300 mm diameter aluminum ingot by continuous casting. The ingot is drawn after groove rolling to produce an aluminum strand with a diameter of 5 mm. This strand was subjected to intermediate heat treatment at 400 ° C. for 60 minutes and 300 ° C. for 1 minute. Then, after performing continuous wire drawing to a diameter of 0.5 mm, a sample subjected to a final heat treatment at 330 ° C. was used as a conventional example. This comparative product 1 was also subjected to the same test as in Example 1, and the results are shown in Table 1.

(Note 1) The purity of the Al raw materials is as in Examples 1 to 3 (Sample Nos. 1 to 8) and Comparative Examples 1 and 2: 99.99% by mass, Example 5 (Sample No. 9): 99.998% by mass. .
The purity of conventional Al raw material is 99.995% by mass
(Note 2) Cooling method after solutionization in Examples: Water cooling

From the test results in Table 1, sample No. 1-4, the Vickers hardness after tempering increases as the Sc content increases until the Sc content reaches 0.15% by mass to 0.5% by mass, but the Sc content is 0 Even in the maximum range of 5 mass%, the Vickers hardness is suppressed to 27, and chip cracking does not occur.
Further, the aging treatment after wire bonding greatly improved the hardness. Even when the Sc content was 0.15% by mass, the Vickers hardness reached 38, and the thermal shock test result was good.

  On the other hand, Comparative Examples 1 and 2 have Sc contents of 0.1% by mass and 0.8% by mass, respectively, and Comparative Example 1 has low Vickers hardness and no chip cracking. The hardness after the test is low and the thermal shock test result is poor. On the contrary, in Comparative Example 2, the Sc content is large, so the hardness by aging treatment after bonding is large, and the thermal shock test result is good. However, since the hardness after tempering was large, chip cracking occurred and it became unusable.

Furthermore, the Sc content was set to 0.3% by mass, and the thicknesses of these aluminum alloy thin wires were changed so that the diameters were 0.1 mm and 0.3 mm. The thermal shock test result was good, and it was shown that these effects were not changed even if the thickness of these aluminum alloy fine wires was reduced.

Also, from Samples 5 and 6 to which Zr was added in addition to Sc, although the hardness after tempering heat treatment was increased by the addition of Zr, it was suppressed and chip cracking did not occur, but the hardness by aging treatment after bonding was It can be seen that the thermal shock test results are good with significant improvement.
Zirconium (Zr) has the same age-hardening effect as scandium (Sc), and also stabilizes against age-related deterioration due to temperature changes such as the age-hardened aluminum alloy fine wire exposed to temperature changes in its usage environment. If it is within the range of the addition amount of half or less of the content of scandium (Sc), it can be handled in the same manner as scandium (Sc).

Furthermore, the purity of the aluminum raw material is improved by an order of magnitude (99.998% by mass), and the sample 9 in which the Sc content is minimized is lower in hardness after tempering, but the hardness after aging treatment Is maintained as high as 38, and it is understood that the thermal shock test result is good.

As is apparent from the graph of FIG. 1 showing the initial shear strength and the repeated shear strength ratio for the sample No. 4 in Example 1 and the 5N purity aluminum thin wire of the conventional example, the shear strength test results are as follows. The number of times of reduction from the initial stage to 20% (0.8) is about 3,000 times in the case of Example 4 with respect to 10,000 times or more in the conventional example, and about 3,000 times in the case of the conventional 5N purity aluminum fine wire. It can be seen that the thermal shock life is three times that of the aluminum wire.

From the above test results, the Al—Sc binary alloy composed of scandium (Sc) and aluminum (Al) is suitable as the wiring for the semiconductor device, and the range of Sc from 0.15 to 0.5 mass% is suitable.
Further, in the case of an Al—Sc—Zr ternary alloy composed of scandium (Sc), aluminum (Al), and zirconium (Zr), the scandium (Sc) is 0.15 to 0.5 mass% with respect to zirconium. (Zr) was effective as a third additive element even in a minute range lower than the above content, and was suitable in the range of 0.01 to 0.25% by mass. However, since Zr has a greater influence on hardness than Sc, its content needs to be half or less of Sc.
The Vickers hardness after the solution treatment is 21 Hv in Table 1 from the viewpoint of preventing chip cracking.
Even if it is lower, the thermal shock can be improved by the aging treatment by adding Sc, so the range was effective from 18 Hv to 30 Hv.

The present invention is useful as a connecting line for power semiconductors used in hybrid vehicles, electric vehicles, trains, wind power generators, industrial robots, etc., since the decrease in shear strength is small even after repeated thermal shock tests. is there.

Claims (13)

In an Al—Sc binary alloy composed of scandium (Sc) and aluminum (Al),
The composition of scandium (Sc) is 0.15 to 0.5% by mass and the balance is aluminum (Al) having a purity of 99.99% by mass or more, and a recrystallized structure is formed in a forced solid solution aluminum alloy matrix. An aluminum wedge bonding wire for connecting a semiconductor device, characterized by being used in a high-temperature environment having a Vickers hardness of 21 to 30 Hv before aging heat treatment. In an Al—Sc binary alloy composed of scandium (Sc) and aluminum (Al),
The composition of scandium (Sc) is 0.15 to 0.5% by mass and the balance is aluminum (Al) having a purity of 99.99% by mass or more, and a recrystallized structure is formed in a forced solid solution aluminum alloy matrix. An aluminum wedge bonding wire for connecting a semiconductor device, characterized in that it is used in a high-temperature environment and has Al ₃ Sc aging precipitation particles formed by aging heat treatment. In an Al—Sc—Zr ternary alloy composed of scandium (Sc), aluminum (Al) and zirconium (Zr), scandium (Sc) is 0.15 to 0.5 mass%, and zirconium (Zr) is 0.01 0.2% by mass (however, zirconium (Zr) is less than half the amount of scandium (Sc)) and the balance is composed of aluminum (Al) having a purity of 99.998% by mass or more. An aluminum wedge bonding wire for connecting a semiconductor device, wherein the aluminum wedge bonding wire has a recrystallized structure in an aluminum alloy matrix and has a Vickers hardness of 21 to 30 Hv, and is used in a high temperature environment. In an Al—Sc—Zr ternary alloy composed of scandium (Sc), aluminum (Al) and zirconium (Zr), scandium (Sc) is 0.15 to 0.5 mass%, and zirconium (Zr) is 0.01 0.2% by mass (however, zirconium (Zr) is less than half the amount of scandium (Sc)) and the balance is composed of aluminum (Al) having a purity of 99.998% by mass or more. Aluminum alloy having a recrystallized structure in an aluminum alloy matrix and forming aging precipitation particles of Al ₃ Sc by an aging heat treatment, wherein the aluminum wedge is used in a high temperature environment. Bonding wire.   5. The aluminum wedge bonding wire for connecting a semiconductor device according to claim 1, wherein the aluminum alloy has an aluminum (Al) purity of 99.998% by mass or more. The aluminum wedge bonding wire for connecting a semiconductor device according to any one of claims 1 to 4, wherein an amount of the scandium (Sc) added is 0.1 to 0.3% by mass. The recrystallized structure is formed by refining heat treatment of a cold-drawn structure obtained by continuous wire drawing in water cooling after forced solid solution. 2. An aluminum wedge bonding wire according to item 1.   The aluminum wedge bonding wire for connecting a semiconductor device according to any one of claims 1 to 4, wherein the aluminum alloy is ultrasonically bonded. The aluminum wedge bonding wire for connecting a semiconductor device according to any one of claims 1 to 4, wherein a wire diameter of the fine wire is less than 50 to 500 µm. The aluminum wedge bonding wire for connecting a semiconductor device according to any one of claims 1 to 4, wherein the high-temperature environment is 80 ° C to 300 ° C.   The said high temperature environment is 150 to 250 degreeC, The aluminum edge bonding wire for a semiconductor device connection of any one of Claims 1-4 characterized by the above-mentioned. An Al—Sc binary alloy fine wire having a composition composed of 0.15 to 0.5 mass% of scandium (Sc) and the balance of 99.99 mass% or more of aluminum (Al) is forcibly solidified by solution treatment. Wedge bonding as a fine wire having a recrystallized structure in an aluminum alloy matrix,
A method for connecting a semiconductor device used in a high temperature environment, characterized in that an aging heat treatment is performed after bonding. Scandium having a composition comprising scandium (Sc) of 0.15 to 0.5 mass%, zirconium (Zr) of 0.01 to 0.2 mass%, and the balance of aluminum (Al) having a purity of 99.998 mass% or more. Wedge bonding as a fine wire having a recrystallized structure in an aluminum alloy matrix that is forcibly solidified by solution treatment of an Al—Sc—Zr ternary alloy fine wire composed of (Sc), aluminum (Al), and zirconium (Zr) And a semiconductor device connection method used in a high-temperature environment, characterized in that aging heat treatment is performed after bonding.

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