JPS61173171A - 半導体ウエハの抵抗率測定法 - Google Patents

半導体ウエハの抵抗率測定法

Info

Publication number
JPS61173171A
JPS61173171A JP1393285A JP1393285A JPS61173171A JP S61173171 A JPS61173171 A JP S61173171A JP 1393285 A JP1393285 A JP 1393285A JP 1393285 A JP1393285 A JP 1393285A JP S61173171 A JPS61173171 A JP S61173171A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
resistivity
amount
waveguide
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1393285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518063B2 (enExample
Inventor
Koji Murai
村井　耕治
Akira Usami
宇佐美　晶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP1393285A priority Critical patent/JPS61173171A/ja
Publication of JPS61173171A publication Critical patent/JPS61173171A/ja
Publication of JPH0518063B2 publication Critical patent/JPH0518063B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP1393285A 1985-01-28 1985-01-28 半導体ウエハの抵抗率測定法 Granted JPS61173171A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1393285A JPS61173171A (ja) 1985-01-28 1985-01-28 半導体ウエハの抵抗率測定法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1393285A JPS61173171A (ja) 1985-01-28 1985-01-28 半導体ウエハの抵抗率測定法

Publications (2)

Publication Number Publication Date
JPS61173171A true JPS61173171A (ja) 1986-08-04
JPH0518063B2 JPH0518063B2 (enExample) 1993-03-10

Family

ID=11846961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1393285A Granted JPS61173171A (ja) 1985-01-28 1985-01-28 半導体ウエハの抵抗率測定法

Country Status (1)

Country Link
JP (1) JPS61173171A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270648A (ja) * 1988-04-22 1989-10-27 Kanzaki Paper Mfg Co Ltd 材料の電気的特性測定装置
US4949034A (en) * 1988-09-07 1990-08-14 Mitsubishi Kinzoku Kabushiki Kaisha Method for contactless evaluation of characteristics of semiconductor wafers and devices
JP2004177274A (ja) * 2002-11-27 2004-06-24 Tohoku Techno Arch Co Ltd 非接触導電率測定システム
WO2005045450A1 (ja) * 2003-11-10 2005-05-19 Tohoku Techno Arch Co., Ltd. 非接触導電率測定装置
JP2007324194A (ja) * 2006-05-30 2007-12-13 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの評価方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130904U (enExample) * 1974-08-28 1976-03-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130904U (enExample) * 1974-08-28 1976-03-05

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270648A (ja) * 1988-04-22 1989-10-27 Kanzaki Paper Mfg Co Ltd 材料の電気的特性測定装置
US4949034A (en) * 1988-09-07 1990-08-14 Mitsubishi Kinzoku Kabushiki Kaisha Method for contactless evaluation of characteristics of semiconductor wafers and devices
JP2004177274A (ja) * 2002-11-27 2004-06-24 Tohoku Techno Arch Co Ltd 非接触導電率測定システム
WO2005045450A1 (ja) * 2003-11-10 2005-05-19 Tohoku Techno Arch Co., Ltd. 非接触導電率測定装置
US7309995B2 (en) 2003-11-10 2007-12-18 Tohoku Techno Arch Co., Ltd. Noncontact conductivity measuring instrument
JP2007324194A (ja) * 2006-05-30 2007-12-13 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの評価方法

Also Published As

Publication number Publication date
JPH0518063B2 (enExample) 1993-03-10

Similar Documents

Publication Publication Date Title
US4679946A (en) Evaluating both thickness and compositional variables in a thin film sample
US4636088A (en) Method and apparatus for evaluating surface conditions of a sample
US4704576A (en) Microwave measuring and apparatus for contactless non-destructive testing of photosensitive materials
JP4265206B2 (ja) 非接触導電率測定システム
US20170199027A1 (en) Optical system and methods for the determination of stress in a substrate
JPS61173171A (ja) 半導体ウエハの抵抗率測定法
US4755049A (en) Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
Sakai et al. Noncontact, electrode-free capacitance/voltage measurement based on general theory of metal-oxide-semiconductor (MOS) structure
JPH03504763A (ja) 光学計測装置
JPH0755702A (ja) 結晶欠陥計測装置及びそれを用いた半導体製造装置
JPS6160576B2 (enExample)
US10481188B2 (en) System and method for non-contact measurement of optoelectronic properties of thin film
JPH06118009A (ja) 異物検査装置および異物検査方法
JPH0719844A (ja) ウエーハの表面粗さ測定方法
JPS6253944B2 (enExample)
JPS59150443A (ja) 半導体のキヤリアライフタイム計測装置
RU2495370C1 (ru) Устройство для контроля толщины проводящей пленки изделий электронной техники
RU2516238C2 (ru) Способ определения электропроводности и энергии активации примесных центров полупроводниковых слоев
RU2515415C1 (ru) Способ контроля дефектности эпитаксиальных слоев кремния на диэлектрических подложках
JPH06101506B2 (ja) ガリウム砒素半導体ウェ−ハのｅｌ２分布測定方法
Lu et al. Second‐harmonic responses of modulated photoreflectance in semiconductors
Fournier et al. Thermal wave probing of the optical electronic and thermal properties of semiconductors
JPS61220348A (ja) 半導体の処理過程評価方法およびその装置
Fedortsov et al. Noncontact laser control of electric-physical parameters of semiconductor layers
KR102062701B1 (ko) 준광학 밀리미터 및 테라헤르츠파를 이용한 반도체 캐리어 수명 측정 장치 및 그 방법

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term