JPS61172333A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To etch a plurality of semiconductors by one time processing making the etching process faster and more efficient by a method wherein a plurality of high frequency electrodes or grounding electrodes are provided on a semiconductor manufacturing equipment be processed by plasma. CONSTITUTION:An electrode 10b out of three electrodes is connected to a high- frequency electrode 4 and the other two electrodes 10a, 10c are grounded while a semiconductor substrate 7 is mounted on the surface and backside of electrode 10b connected to the high-frequency electrode 4. The electrode 10b is impressd with high voltage from the high-frequency electrode 4 to produce plasma in an etching chamber 3. The semiconductor suhbstrate 7 mounted on both sides of electrode 10b is etched by plasma. Through these procedures, etching speed may be accelerated to miniaturize the device in terms of the quantity to be processed since more than three each of electrodes are utilized to process more than two each of semiconductor substrates in total mounted on an electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and more particularly to an etching equipment using plasma.

[Conventional technology]

As an example of the structure of a conventional plasma etching apparatus, the structure of a single wafer type etching apparatus is shown in FIG.
This figure shows another structure in which the electrode system of the single-wafer etching apparatus shown in the figure is changed. 61st! 1 and FIG. 7, 1 and 2 are an upper electrode and a lower electrode for applying a high frequency voltage, respectively.
3 is a chamber which is an etching chamber, 4 is a high frequency power supply,
5 is a power cable, and 7 is a semiconductor substrate.

Next, the operation will be explained. In FIG. 6.7, the semiconductor substrate 7 is placed on the lower electrode 2, the inside of the chamber 3 is evacuated, and then gas is flowed into the inside of the chamber 3 (
(Exhaust port and gas inlet are not shown). When the gas pressure reaches a certain point, the upper and lower electrodes 1.2
A high voltage is applied between both electrodes to generate plasma within the chamber 3. The generated plasma causes the semiconductor substrate 7 to
Alternatively, an object to be etched such as polysilicon formed on the semiconductor substrate 7 is etched into a predetermined shape.

In the case of FIG. 6, a high frequency power source 4 is applied to the upper electrode 1,
The lower electrode 2 is grounded. Figure 7 shows the opposite.

In both cases, the difference in the application electrode results in a difference in the movement of plasma ions, resulting in different etching characteristics, but the operating principle is the same.

FIG. 8 shows a batch type etching apparatus for etching a large number of semiconductor substrates. In the figure, 4.5.7 is the same as above, and 8 is a hexagonal column-shaped internal electrode, to which a plurality of semiconductor substrates 7 are attached. 9 is a cylindrical chamber.

[Problem that the invention seeks to solve]

However, in the conventional semiconductor manufacturing apparatus shown in FIGS. 6 and 7, only one semiconductor substrate 7 is placed in the chamber 3 during etching, and the efficiency is significantly lower than that of an etching chamber. Furthermore, in the batch type etching method shown in FIG. 8, in which multiple semiconductor substrates are etched, the internal electrodes 8 become larger
This invention was made to solve the above-mentioned conventional problems, and it is possible to process multiple semiconductor substrates in one process. The object of the present invention is to provide a semiconductor manufacturing device that can perform etching.

[Means for solving problems]

The semiconductor manufacturing apparatus according to the present invention is not equipped with single-wafer type electrodes, but is provided with a plurality of high-frequency electrodes or ground electrodes, and a total of at least two or more semiconductor substrates are attached to the electrodes, so that one apparatus can manufacture a plurality of semiconductor substrates. This is an etching process.

[Effect]

The semiconductor manufacturing apparatus according to the present invention is provided with 31[1!1 or more electrodes, and a total of at least two or more semiconductor substrates are mounted on the electrodes and processed simultaneously, so that the etching process can be made faster and more efficient.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 3 is a chamber forming an etching chamber;
4 is a high frequency power source, 10a, 10b.

Reference numeral 10c indicates three electrodes, and 7 indicates a semiconductor substrate to be etched, which is an object to be etched such as a silicon wafer or polysilicon formed on a silicon wafer. Further, 5 is a power cable.

In the figure, among the three electrodes, the electrode 10b is connected to the high frequency power source 4, and the other two electrodes 10a.

10c is grounded, and the semiconductor substrate 7 is connected to the high frequency power source 4.
The electrodes 10b are attached to the front and back sides of the electrode 10b connected to the electrode 10b.

Next, the operation will be explained.

First, the inside of the chamber 3 is evacuated, gas is introduced into the chamber 3, and when the pressure becomes constant, a high voltage is applied to the electrode 10b from the high frequency power source 4 to generate plasma in the etching chamber 3. This plasma etches the semiconductor substrate 7 attached to both sides of the electrode lOb.

In the above embodiment, the semiconductor substrate 7 is attached to the electrode 10b connected to the high frequency power source 4, but the semiconductor substrate 7 may be attached to the ground electrodes 10a and 10c as shown in FIG.

In these embodiments, the objects to be etched are mounted on the front and back surfaces of multiple electrodes to which high-frequency electric fields are applied or ground electrodes, so etching can be performed at more than twice the speed of conventional etching, and the equipment required for the number of sheets to be processed is reduced. It can be said that it has become relatively compact.

Further, although the above description has only been about etching of a semiconductor substrate, the present invention may also be applied to etching of a metal film, an insulating film, or other objects to be etched used in the manufacture of semiconductors on a semiconductor substrate.

〔Effect of the invention〕

As described above, according to the present invention, the number of electrodes is increased to three or more, and a total of at least two or more semiconductor substrates are attached to the electrodes for processing, so that the etching processing speed is increased and the processing speed is increased. This has the effect of reducing the size of the device compared to the number of sheets.

[Brief explanation of the drawing]

FIG. 1 is a block diagram showing a semiconductor manufacturing apparatus according to one embodiment of the present invention, FIGS. 2 and 3 are block diagrams showing other embodiments of the present invention, and FIGS. 4 and 5 are block diagrams showing a book destination apparatus. FIG. 1. Old electrode, 3. Chamber 1.4. High frequency power supply, 5. Power cable, 7. Semiconductor substrate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A semiconductor manufacturing apparatus for processing semiconductors using plasma, characterized in that three or more electrodes to which a high frequency voltage is applied are provided, and a plurality of semiconductor substrates are attached to one or more of the electrodes.