JPS61166090A - 半導体レ−ザの製造方法 - Google Patents
半導体レ−ザの製造方法Info
- Publication number
- JPS61166090A JPS61166090A JP725585A JP725585A JPS61166090A JP S61166090 A JPS61166090 A JP S61166090A JP 725585 A JP725585 A JP 725585A JP 725585 A JP725585 A JP 725585A JP S61166090 A JPS61166090 A JP S61166090A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- growth
- evaporation
- current blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000001704 evaporation Methods 0.000 claims abstract description 28
- 230000008020 evaporation Effects 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 238000005253 cladding Methods 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 24
- 230000002265 prevention Effects 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- XXAXVMUWHZHZMJ-UHFFFAOYSA-L 4,5-dihydroxybenzene-1,3-disulfonate Chemical compound OC1=CC(S([O-])(=O)=O)=CC(S([O-])(=O)=O)=C1O XXAXVMUWHZHZMJ-UHFFFAOYSA-L 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 3
- 239000007864 aqueous solution Substances 0.000 claims 1
- -1 disodium salt Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 10
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000002655 kraft paper Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725585A JPS61166090A (ja) | 1985-01-17 | 1985-01-17 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725585A JPS61166090A (ja) | 1985-01-17 | 1985-01-17 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61166090A true JPS61166090A (ja) | 1986-07-26 |
| JPH0519837B2 JPH0519837B2 (enrdf_load_stackoverflow) | 1993-03-17 |
Family
ID=11660919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP725585A Granted JPS61166090A (ja) | 1985-01-17 | 1985-01-17 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166090A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999841A (en) * | 1989-01-24 | 1991-03-12 | Rohm Co., Ltd. | Semiconductor lasers |
-
1985
- 1985-01-17 JP JP725585A patent/JPS61166090A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999841A (en) * | 1989-01-24 | 1991-03-12 | Rohm Co., Ltd. | Semiconductor lasers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519837B2 (enrdf_load_stackoverflow) | 1993-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |