JPS61166088A - 半導体レーザの製造方法 - Google Patents
半導体レーザの製造方法Info
- Publication number
- JPS61166088A JPS61166088A JP725385A JP725385A JPS61166088A JP S61166088 A JPS61166088 A JP S61166088A JP 725385 A JP725385 A JP 725385A JP 725385 A JP725385 A JP 725385A JP S61166088 A JPS61166088 A JP S61166088A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- growth
- type
- layer made
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 21
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000005253 cladding Methods 0.000 claims description 34
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 14
- 230000002265 prevention Effects 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XXAXVMUWHZHZMJ-UHFFFAOYSA-N Chymopapain Chemical compound OC1=CC(S(O)(=O)=O)=CC(S(O)(=O)=O)=C1O XXAXVMUWHZHZMJ-UHFFFAOYSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725385A JPS61166088A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725385A JPS61166088A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61166088A true JPS61166088A (ja) | 1986-07-26 |
| JPH0533550B2 JPH0533550B2 (enrdf_load_stackoverflow) | 1993-05-19 |
Family
ID=11660861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP725385A Granted JPS61166088A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166088A (enrdf_load_stackoverflow) |
-
1985
- 1985-01-17 JP JP725385A patent/JPS61166088A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPL.PHYS.LETT=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533550B2 (enrdf_load_stackoverflow) | 1993-05-19 |
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