JPS61156891A - Photocoupled semiconductor device - Google Patents
Photocoupled semiconductor deviceInfo
- Publication number
- JPS61156891A JPS61156891A JP59276200A JP27620084A JPS61156891A JP S61156891 A JPS61156891 A JP S61156891A JP 59276200 A JP59276200 A JP 59276200A JP 27620084 A JP27620084 A JP 27620084A JP S61156891 A JPS61156891 A JP S61156891A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- pellet
- light
- light emitting
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 19
- 239000008188 pellet Substances 0.000 abstract description 33
- 238000000034 method Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は光結合半導体装置に関し、特に入出力間の絶縁
分離が必要なトランス、コンピュータと端末機器を結ぶ
インタフェース部に使用されるものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optically coupled semiconductor device, and is particularly used for a transformer that requires insulation separation between input and output, and an interface unit that connects a computer and a terminal device.
従来、光結合半導体装置例えばフォトカブラとしては、
第３図に示すものが知られている。Conventionally, optically coupled semiconductor devices such as photocouplers,
The one shown in FIG. 3 is known.
図中の１は、第１のリードフレーム２にマウントされた
発光素子（発光ベレット）である。この発光ペレット１
上には、第２のリードフレーム３にマウントされた受光
素子（受光ベレット）４が前記発光ベレット１に対向し
て設けられている。1 in the figure is a light emitting element (light emitting pellet) mounted on the first lead frame 2. This luminescent pellet 1
A light-receiving element (light-receiving pellet) 4 mounted on a second lead frame 3 is provided above, facing the light-emitting pellet 1 .
前記発光ベレット１及び受光ベレット４は、シリコンか
らなる樹脂層５によって封止されている。The light emitting pellet 1 and the light receiving pellet 4 are sealed with a resin layer 5 made of silicon.
また、前記第１．第２のリードフレーム１．３の一部及
び樹脂層５の周囲には、外囲器６が設けられている。な
お、図中の７．８は、夫々発光ベレット１．受光ベレッ
ト４に接続す゛るボンディングワイヤである。In addition, the above-mentioned No. 1. An envelope 6 is provided around a portion of the second lead frame 1.3 and the resin layer 5. In addition, 7.8 in the figure is the light emitting pellet 1. This is a bonding wire connected to the light receiving pellet 4.
こうした構造のフォトカプラにおいて、発光ベレット１
より発せられた光は受光ベレット４で受光される。そし
て、フォトトランジスタの出力（ＩＣ）は、Ｉｃ−ｈｐ
ＥＸｌｐで求めることができる。但し、ｔ”ｌＦＥはフ
ォトトランジスタの直 。In a photocoupler with such a structure, the light emitting pellet 1
The emitted light is received by the light receiving pellet 4. Then, the output (IC) of the phototransistor is Ic-hp
It can be obtained using EXlp. However, t"lFE is directly connected to the phototransistor.
流電流増幅率、Ｉｐは受光した時の光電流を示す。The current amplification factor, Ip, indicates the photocurrent when light is received.
ところで、前述したフォトカブラにおいて、出力のばら
つきを小さくする為には、上式よりｈＦＥ。By the way, in the above-mentioned photocoupler, in order to reduce the variation in output, hFE is used according to the above formula.
Ｉｐのばらつきを小さくする必要がある。It is necessary to reduce the variation in Ip.
しかしながら、従来のフォトカブラによれば、ｈＦＥの
ばらつきは現在のプロセスでは限界まできている。また
、Ｉｐのばらつきは第４図及び第５図に示すように光路
となる樹脂層５の形状に大きく左右される。つまり、発
光ベレット１の光が樹脂層５を光路として進む時、外囲
器６との界面で反射（一部吸収される）をおこす。その
為、受光ベレット１を覆う部分の樹脂層５が多（なると
、受光ベレット１に光が集まらなくなりＩｐが低下する
。However, according to the conventional photocoupler, the variation in hFE has reached its limit in the current process. In addition, the variation in Ip is greatly influenced by the shape of the resin layer 5 that forms the optical path, as shown in FIGS. 4 and 5. That is, when the light from the light emitting pellet 1 travels through the resin layer 5 as an optical path, it is reflected (partly absorbed) at the interface with the envelope 6. Therefore, the resin layer 5 in the portion covering the light-receiving pellet 1 becomes large (as a result, light does not gather on the light-receiving pellet 1, and Ip decreases).
本発明は上記事情に鑑みてなされたもので、発光素子か
らの光を受光した時の光電流のばらつきを低減し、トラ
ンジスタ出力のばらつきを低減し得る光結合半導体装置
を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an optically coupled semiconductor device that can reduce variations in photocurrent when receiving light from a light emitting element and reduce variations in transistor output. do.
〔発明の概要］
本発明は、発光素子をマウントした第１のリードフレー
ムと、受光素子を前記発光素子と対向するようにマウン
トした第２のリードフレームと、前記発光素子及び受光
素子を封止する樹脂層と、前記第１．第２のリードフレ
ームの一部及び樹脂層を被覆する外囲器とを具備し、前
記第１のリードフレームの発光素子周辺の表面、及び第
２のリードフレームの受光素子周辺の表面に夫々溝を設
けることを特徴とし、溝によって樹脂層が発光素子及び
受光素子がマウントされている領域以外のリードフレー
ム上に極力広がるのを防止し、これにより前述した目的
の達成を図ったものである。[Summary of the Invention] The present invention includes a first lead frame on which a light emitting element is mounted, a second lead frame on which a light receiving element is mounted so as to face the light emitting element, and the light emitting element and the light receiving element are sealed. the first resin layer; A part of the second lead frame and an envelope covering the resin layer are provided, and grooves are formed in the surface of the first lead frame around the light emitting element and the surface of the second lead frame around the light receiving element, respectively. The groove prevents the resin layer from spreading on the lead frame other than the area where the light emitting element and the light receiving element are mounted as much as possible, thereby achieving the above-mentioned purpose.
明する。ここで、第１図はフォトカブラの略断面図、第
２図は平面図を示す。I will clarify. Here, FIG. 1 shows a schematic sectional view of the photocoupler, and FIG. 2 shows a plan view.
図中の２１は、第１のリードフレームである。21 in the figure is a first lead frame.
このリードフレーム２１には、該フレームの厚さの約１
／２程度の第１の溝２２が設けられている。This lead frame 21 has a thickness of approximately 1
A first groove 22 of approximately /2 is provided.
この溝２２の深さは深い程効果的であるが、リードフレ
ーム２１の強度を考慮すると該リードフレーム２１の厚
さの約１／２程度が好ましい（これは、後記する第２の
溝についても同様である）。The deeper the depth of this groove 22, the more effective it is, but in consideration of the strength of the lead frame 21, it is preferable that the depth of this groove 22 is about 1/2 of the thickness of the lead frame 21 (this also applies to the second groove described later). similar).
前記リードフレーム２１上の溝２２で囲まれた領域には
、発光素子（発光ベレット）２３がマウントされている
。この発光ベレット２３上には、第２のリードフレーム
２４の第２の溝２５で囲まれた領域にマウントされた受
光素子（受光ベレット）２６が前記発光ベレット２３に
対向して設けられている。なお、前記の第２の溝２５の
深さは第２のリードフレーム２４の厚みの約１／２程度
である。前記発光ベレット２３及び受光ペレット２６は
、例えばシリコンからなる樹脂層２７によって封止され
ている。また、前記第１．第２のリードフレーム２１．
２４の一部及び樹脂層２７の周囲には、第３図と同様な
外囲器（図示せず）が設けられている。なお、図中の２
８はボンディングワイヤである。こうした構造のフォト
カブラにおいて、樹脂層２７は、各リードフレームに発
光ベレット２３．受光ベレット２６をマウント後、これ
らベレットをシリコン樹脂で覆うように封入することに
より形成する。A light emitting element (light emitting pellet) 23 is mounted in a region surrounded by the groove 22 on the lead frame 21 . A light-receiving element (light-receiving pellet) 26 is provided on the light-emitting pellet 23 and facing the light-emitting pellet 23, which is mounted in a region surrounded by the second groove 25 of the second lead frame 24. Note that the depth of the second groove 25 is about 1/2 of the thickness of the second lead frame 24. The light emitting pellet 23 and the light receiving pellet 26 are sealed with a resin layer 27 made of silicon, for example. In addition, the above-mentioned No. 1. Second lead frame 21.
An envelope (not shown) similar to that shown in FIG. 3 is provided around a part of the resin layer 24 and the resin layer 27. In addition, 2 in the figure
8 is a bonding wire. In a photocoupler having such a structure, a resin layer 27 is provided with a light emitting pellet 23 on each lead frame. After the light-receiving pellets 26 are mounted, these pellets are covered and sealed with silicone resin.
しかして、本発明によれば、第１のリードフレーム２１
に発光ベレット２３を囲む第１の溝２２を、第２のリー
ドフレーム２４に受光ベレット２６を囲む第２の溝２５
を夫々設けた構造となっているため、樹脂層２７を発光
ベレット２３及び受光ペレット２６を覆うように形成す
る際、この樹脂層２７のベレットマウント位置から外方
向への拡がりを阻止できる。従って、受光ペレット２６
を覆う樹脂１！２７の量を従来と比べ少なくするととも
にその形状のバラツキも小さくなり、受光時の光電流（
Ｉｐ）を多くできる。事実、従来及び本発明に係るフォ
トカブラを用いて光電流のばらつき分布を調べたころ、
夫々第６図及び第７図に示す特性図を得た。その結果、
本発明によれば、光電流が平均値で約５μＡ（１３％）
Ｕｐし、ばらつきも小さくなることが確認できた。従っ
て、今後出力のばらつきが厳しくなってきた場合でも、
ベレットのデザインを変えることなく対応して行く事が
可能となる。According to the present invention, the first lead frame 21
A first groove 22 surrounding the light-emitting pellet 23 is formed in the second lead frame 24, and a second groove 25 surrounding the light-receiving pellet 26 is formed in the second lead frame 24.
Since the resin layer 27 is formed to cover the light-emitting pellet 23 and the light-receiving pellet 26, it is possible to prevent the resin layer 27 from spreading outward from the pellet mounting position. Therefore, the light receiving pellet 26
By reducing the amount of resin 1!27 that covers the area compared to the conventional one, the variation in its shape is also reduced, and the photocurrent (
IP) can be increased. In fact, when we investigated the dispersion distribution of photocurrent using conventional photocoupler and photocoupler according to the present invention,
Characteristic diagrams shown in FIGS. 6 and 7, respectively, were obtained. the result,
According to the present invention, the photocurrent is approximately 5 μA (13%) on average.
It was confirmed that the results were improved and the variation was also reduced. Therefore, even if output variations become more severe in the future,
It becomes possible to respond without changing the design of the beret.
なお、上記実施例では、溝の深さをリードフレームの厚
みの約１／２程度でしたが、これに限らない。但し、前
述したように溝の深さが１／２を越えると、リードフレ
ームの強度が低下するのでこの点を考慮する必要がある
。また、１／２に満たない場合でも、従来と比べ多少の
効果は期待できるものである。更に、溝の形状はＶ型の
場合でも凹型の場合でも効果はほぼ同じであった。In the above embodiment, the depth of the groove was approximately 1/2 of the thickness of the lead frame, but the depth is not limited to this. However, as described above, if the depth of the groove exceeds 1/2, the strength of the lead frame decreases, so this point must be taken into consideration. Moreover, even if it is less than 1/2, some effect can be expected compared to the conventional one. Furthermore, the effect was almost the same whether the groove was V-shaped or concave.
以上詳述した如く本発明によれば、光電流のばらつきを
低減し、もってトランジスタ出力のばらつきを低減し得
る高信頼性の光結合半導体装置を提供できるものである
。As described in detail above, according to the present invention, it is possible to provide a highly reliable optically coupled semiconductor device that can reduce variations in photocurrent and thereby reduce variations in transistor output.
第１図は本発明の一実施例に係るフォトカプラの略断面
図、第２図は第１図の平面図、第３図は従来のフォトカ
プラの断面図、第４図及び第５図は、第３図のフォトカ
プラの欠点を説明するための断面図、第６図は従来のフ
ォトカプラの充電流特性図、第７図は本発明に係るフォ
トカプラの充電流特性図である。
２１．２４・・・リードフレーム、２２．２５・・・溝
、２３・・・発光素子（発光ベレット）、２６・・・樹
脂層、２７・・・ボンディングワイヤ。
出願人代理人 弁理士 鈴江武彦
第１図
第２図 第３図
第４図 第５図
第６図FIG. 1 is a schematic sectional view of a photocoupler according to an embodiment of the present invention, FIG. 2 is a plan view of FIG. 1, FIG. 3 is a sectional view of a conventional photocoupler, and FIGS. 4 and 5 are , FIG. 3 is a sectional view for explaining the drawbacks of the photocoupler, FIG. 6 is a charging current characteristic diagram of a conventional photocoupler, and FIG. 7 is a charging current characteristic diagram of a photocoupler according to the present invention. 21.24... Lead frame, 22.25... Groove, 23... Light emitting element (light emitting pellet), 26... Resin layer, 27... Bonding wire. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6
Claims (1)
素子を前記発光素子と対向するようにマウントした第２
のリードフレームと、前記発光素子及び受光素子を封止
する樹脂層と、前記第１、第２のリードフレームの一部
及び樹脂層を被覆する外囲器とを具備し、前記第１のリ
ードフレームの発光素子周辺の表面、及び第２のリード
フレームの受光素子周辺の表面に夫々溝を設けることを
特徴とする光結合半導体装置。A first lead frame on which a light emitting element is mounted, and a second lead frame on which a light receiving element is mounted so as to face the light emitting element.
a lead frame, a resin layer that seals the light emitting element and the light receiving element, and an envelope that covers parts of the first and second lead frames and the resin layer; An optically coupled semiconductor device characterized in that grooves are provided in the surface of the frame around the light emitting element and the surface of the second lead frame around the light receiving element, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59276200A JPS61156891A (en) | 1984-12-28 | 1984-12-28 | Photocoupled semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59276200A JPS61156891A (en) | 1984-12-28 | 1984-12-28 | Photocoupled semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61156891A true JPS61156891A (en) | 1986-07-16 |
Family
ID=17566078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59276200A Pending JPS61156891A (en) | 1984-12-28 | 1984-12-28 | Photocoupled semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156891A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101060761B1 (en) | 2009-04-23 | 2011-08-31 | 삼성엘이디 주식회사 | Light emitting diode package |
-
1984
- 1984-12-28 JP JP59276200A patent/JPS61156891A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101060761B1 (en) | 2009-04-23 | 2011-08-31 | 삼성엘이디 주식회사 | Light emitting diode package |
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