JPS61154179A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS61154179A JPS61154179A JP27736984A JP27736984A JPS61154179A JP S61154179 A JPS61154179 A JP S61154179A JP 27736984 A JP27736984 A JP 27736984A JP 27736984 A JP27736984 A JP 27736984A JP S61154179 A JPS61154179 A JP S61154179A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure
- sensitivity
- pressure sensor
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 19
- 239000006185 dispersion Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は一感度ばらつきのない圧力センナの構造に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the structure of a pressure sensor with no variation in sensitivity.
(従来技術とその問題点)
従来、圧力センナの分野では圧力感度に関して製品間の
ばらつきを低減することが大きな課題であった。当該圧
力感度のばらつきの原因として、(1)ダイアフラムの
膜厚の違い、(2)不純物濃度のばらつき等による各感
圧素子の感度の違い、(3)ダイアフラム上の感圧素子
の位置ずれ等の要因があげられる。近年、電気化学エツ
チング等によシ、ダイアフラムの膜厚制御が可能となり
、上記(1)の要因による当該感度ばらつきの低減化に
利用されている。また、半導体製造装置の進歩九より上
記(2)の不純物濃度のばらつきを少なくすることも可
能となっto
一方、感圧素子の位置決めは、通常、光学顕微鏡を用い
て、技術者が予め刻まれ九目印に従って目合せをするこ
とによシ行なっている。従がって、多少の位置ずれはこ
れを避けることができない。(Prior Art and its Problems) Conventionally, in the field of pressure sensors, reducing the variation between products in terms of pressure sensitivity has been a major challenge. The causes of the variation in pressure sensitivity include (1) differences in the film thickness of the diaphragm, (2) differences in sensitivity of each pressure-sensitive element due to variations in impurity concentration, etc., (3) positional deviation of the pressure-sensitive element on the diaphragm, etc. The following factors can be cited. In recent years, it has become possible to control the film thickness of a diaphragm by electrochemical etching, etc., and this is used to reduce the sensitivity variations caused by the factor (1) above. Furthermore, advances in semiconductor manufacturing equipment have made it possible to reduce the variation in impurity concentration mentioned in (2) above. This is done by aligning the eyes according to the nine landmarks. Therefore, some misalignment cannot be avoided.
以下、従来例について図t−あげて説明し、同時にその
欠点について述べる。Hereinafter, a conventional example will be explained with reference to FIG. 2, and its drawbacks will also be discussed.
第8図は従来の圧力変換器の構成例であり、第9図はダ
イアフラムを上から見九図である。第8図において、拡
散型ひずみゲージ抵抗1の置かれる厚さ均一のダイアフ
ラム13と支持体14により構成されるダイアスラム型
圧カセンサ3は、該圧力センサ3の線膨張係数に極めて
近い線膨張係数を有するガラス4(例えばコーニング社
製7740パイレツクスガラス)K静電ボンディングに
よって接着されてめる。FIG. 8 shows an example of the configuration of a conventional pressure transducer, and FIG. 9 is a top view of the diaphragm. In FIG. 8, a diaphragm type pressure sensor 3 composed of a diaphragm 13 of uniform thickness and a support 14 on which a diffusion type strain gauge resistor 1 is placed has a linear expansion coefficient extremely close to that of the pressure sensor 3. The glass 4 (e.g. Corning 7740 Pyrex glass) is bonded by electrostatic bonding.
さらに当該ガラス4はパッケージ6に金・スズあるいは
金・シリコンの共晶合金5によって接着されている。ま
几、該パッケージ6は、キャップ91/!:よつて封止
されている。以下に当該圧力変換器の動作原理を記する
。圧力の測定される気体10が導通管8全通して供給さ
れ、一方キャップ9につけられ念導通管12を通して参
照となる気体11が供給される。12Fi大気中に開放
される場合もある。圧力センサ3のダイアフラム13に
は、上面と下面の気体の圧力の差によりひずみが生じ、
ダイアフラム13上九つくられ、ゲージ抵抗により構成
され比ホイートストンブリッジ回路において、当該ブリ
ッジ回路の出力電圧変化が検出される。当該ブリッジの
励起電圧及び出力電圧は、金属a線2を介してリード7
よ少入力あるいは出力される。Further, the glass 4 is bonded to the package 6 with a gold-tin or gold-silicon eutectic alloy 5. Well, the package 6 has a cap 91/! : It is sealed. The operating principle of the pressure transducer is described below. A gas 10 whose pressure is to be measured is supplied through the conduit 8, while a reference gas 11 is supplied through the conduit 12 attached to the cap 9. 12Fi may be opened to the atmosphere. Strain occurs in the diaphragm 13 of the pressure sensor 3 due to the difference in gas pressure between the upper and lower surfaces.
In a ratio Wheatstone bridge circuit formed on the diaphragm 13 and constituted by a gauge resistor, changes in the output voltage of the bridge circuit are detected. The excitation voltage and output voltage of the bridge are connected to the lead 7 via the metal A-wire 2.
A little input or output.
第9図のダイアフラム13は通常、シリコンの(100
)面を利用しており、当該ダイアフラムの周辺は<11
0>方向に向けられている。かかる場合には、ゲージ抵
抗1の抵抗変化率ΔR/Rはピエゾ抵抗効果の関係式を
用いて(11式のように表わせる。Diaphragm 13 in FIG. 9 is typically made of silicon (100
) surface, and the area around the diaphragm is <11
0> direction. In such a case, the rate of change in resistance ΔR/R of the gauge resistor 1 can be expressed as shown in Equation 11 using the relational expression of the piezoresistance effect.
ΔR/R=πlσ!+πtσt (1)式中
、σ/1−1抵抗の長さ方向に働く法線応力、σtFi
抵抗の長さ方向と垂直に働く法線応力を表わしており、
πl、πtはそれぞれの応力にかかる比例定数である。ΔR/R=πlσ! +πtσt (1) In the formula, σ/1-1 normal stress acting in the length direction of the resistance, σtFi
It represents the normal stress acting perpendicular to the length direction of the resistor.
πl and πt are proportionality constants applied to the respective stresses.
このゲージ抵抗1をボロン等の拡散により形成した場合
には、πノ、πtの間に(2)式の近似がなりたつ。When the gauge resistor 1 is formed by diffusing boron or the like, the approximation of equation (2) holds between π and πt.
πl−−πt(2)
従つて、(2)式を用いて(1)式を変形するとΔR/
R幇πl(σl−σt) (3)の関係式が得
られる。第10図は、(3)式をもとにしてダイアプラ
ム上面に正の圧力が印加され念とき中心線上(第9図人
−人′)に生じる抵抗変化率の分布を示したものである
。図中30はゲージ抵抗1のおかれる位置を示しており
、通常、感度が最も大きくなる位置が選ばれる。しかし
、同図に明らかなように、当該位置30では、抵抗変化
率の位置による変化は特に急である。従って、従来の構
造を持つ圧力センサでは、先に述べ友ようなゲージ抵抗
の位置決めの際に不可避的に生ずる目合せのずれに対し
て感度が大きく変動し、結局、圧力センサの感度ばらつ
きが発生するという欠点があつ7’C。πl−−πt(2) Therefore, by transforming equation (1) using equation (2), ΔR/
The relational expression R 幇πl(σl−σt) (3) is obtained. FIG. 10 shows the distribution of the rate of change in resistance that occurs on the center line (person-person' in FIG. 9) when positive pressure is applied to the upper surface of the diaphragm based on equation (3). In the figure, 30 indicates the position where the gauge resistor 1 is placed, and usually the position where the sensitivity is greatest is selected. However, as is clear from the figure, at the position 30, the change in resistance change rate depending on the position is particularly steep. Therefore, in a pressure sensor with a conventional structure, the sensitivity fluctuates greatly due to the misalignment that inevitably occurs when positioning the gauge resistor as mentioned earlier, and eventually the sensitivity of the pressure sensor varies. 7'C has the disadvantage of
(発明の目的)
本発明の目的は、上記従来技術の欠点を除去せしめて、
感度ばらつきの少々い圧力センナの構造を提供すること
にある。(Object of the invention) The object of the present invention is to eliminate the drawbacks of the above-mentioned prior art,
It is an object of the present invention to provide a structure of a pressure sensor with little variation in sensitivity.
(発明の構成)
本発明によれば、印加し九圧力に応答する感圧素子と、
当該感圧素子の置かれるダイアフラムと、当該ダイアフ
ラムの周囲を固定する支持体とを備えた圧力センナにお
いて、当該ダイアフラムの中央部が周辺部より厚く、少
々くとも一個の前記感圧素子が前記中央部に置かれるこ
とThe徴とする圧力センナが得られる。(Structure of the Invention) According to the present invention, a pressure sensitive element responsive to an applied nine pressure;
In a pressure sensor comprising a diaphragm on which the pressure-sensitive element is placed and a support that fixes the periphery of the diaphragm, the center part of the diaphragm is thicker than the peripheral part, and at least one of the pressure-sensitive elements is attached to the center part. A pressure sensor is obtained which has the characteristic of being placed in the same position.
(実施例)
本発明は、上述の構成をとることによシ従来技術の問題
点を解決した。以下、本発明につ込て実施例を示す図面
を参照して説明する。(Example) The present invention solves the problems of the prior art by adopting the above-described configuration. DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings showing embodiments.
第1図および第2図は、本発明の一実施例を示す図で、
第2図は第1図のシリコンダイアフラム40を上から見
た平面図である。これらの図において、第8図および第
9図と同一番号は同一構成要素を示している。第1図と
従来例の第8図とはダイアフラム40の構造の違いを除
いてほぼ同一構成であり、以下当該ダイアフラム40に
ついて説明を行ない、他の要素についてはこれを省く。FIG. 1 and FIG. 2 are diagrams showing one embodiment of the present invention,
FIG. 2 is a plan view of the silicon diaphragm 40 of FIG. 1 viewed from above. In these figures, the same numbers as in FIGS. 8 and 9 indicate the same components. FIG. 1 and FIG. 8 of the conventional example have almost the same configuration except for the difference in the structure of the diaphragm 40, and the diaphragm 40 will be explained below, and other elements will be omitted.
ダイアフラム40では、中央部42は厚さが周辺部41
の2倍あり、ゲージ抵抗1は当該中央部42におかれて
いる。ま几、当該ゲージ抵抗1は第2図に示すように互
いに垂直な方向をなす二種類の方向に配置され、ブリッ
ジ回路を構成する(図示せず)。In the diaphragm 40, the central portion 42 has a thickness equal to that of the peripheral portion 41.
The gauge resistor 1 is placed in the central portion 42. As shown in FIG. 2, the gauge resistors 1 are arranged in two directions perpendicular to each other to form a bridge circuit (not shown).
ダイア72ム40t−作製するには、例えば第一のマス
クを支持体14の下面に用いてバター二/グし、こrL
f S iO,等により保護した後、エツチングにより
中央部42を作り、続いて第二のマスクを支持体14お
よび中央部42の下面に用いて周辺部41f!:作製す
るという方法を用いると良い。To make a diameter of 72 mm and 40 tons, for example, use the first mask on the lower surface of the support 14 and apply butter.
After protection with SiO, etc., the central portion 42 is formed by etching, and then a second mask is applied to the support 14 and the lower surface of the central portion 42 to form the peripheral portion 41f! : It is better to use the method of creating.
々お、当該エツチングを行なう際には、ダイアフラム4
0の上面を常に保護して当該エツチングを受は力いよう
にし々ければいけない。ま几、当該エツチングの技術と
して、化学エツチング、放電加工等を用いることができ
る。In addition, when performing the etching, diaphragm 4
0 must be protected at all times to prevent the etching from occurring. However, as the etching technique, chemical etching, electrical discharge machining, etc. can be used.
第3図は、圧力が印加された際にダイアフラム40の中
心線上(第2図人−人′)に生じt応力により、当該ゲ
ージ抵抗lで抵抗の長さ方向が中心線と垂直な方向をも
つ抵抗の抵抗変化率を位置に対して示したものである。FIG. 3 shows that when pressure is applied, stress t occurs on the center line of the diaphragm 40 (person-person' in FIG. 2), and the length direction of the resistance is perpendicular to the center line at the gauge resistance l. This figure shows the resistance change rate of the resistor with respect to position.
図中60は、感圧素子で例えばゲージ抵抗1の置かれる
位置を示している。同図は、従来例の第10図と異カリ
、当該感圧素子の置かれる位置で感度の位置に対する変
化が著しく小さい。従がって、本実施例の構造をもつ圧
力センナでは、当該感圧素子の位置ずれにより生ずる感
度ばらつきを低減することが可能である。In the figure, 60 indicates a position where a pressure sensitive element, for example, a gauge resistor 1 is placed. This figure differs from FIG. 10 of the conventional example in that the change in sensitivity with respect to the position where the pressure sensitive element is placed is extremely small. Therefore, in the pressure sensor having the structure of this embodiment, it is possible to reduce variations in sensitivity caused by positional displacement of the pressure sensitive element.
(実施例2〜5)
第4図F、1〜(diに前記第4.第5図の圧力センナ
3の他の実施例を示す。図において、第1図と同一番号
は同一構成要素を示している。本実施例において、ダイ
アフラム40の中央部42の形状が、同図(a)では中
央が厚いテーパに、同図(b)では周辺が厚いテーパ形
状に表っている。ま九、同図(C)では、中央部42が
二段の階段形状により形成されている。同図(d)では
、中央部42より漸次周辺に薄いテーパにより当該ダイ
アフラム40が形成されている。Siダイアスラムなら
ば異方性エツチングでこのテーパを形成できる。また放
電加工でもよい。上記の実施例の他に、当該中央部42
が、二段以上の階段形状あるいはテーパからなる構成を
持っても良い。まt1上記階段形状とテーパおよび同図
(d)等を任意九組み合せた構成も本発明に含まれる。(Examples 2 to 5) Figures 4F and 1 to (di show other examples of the pressure sensor 3 shown in Figures 4 and 5. In the figures, the same numbers as in Figure 1 indicate the same components. In this embodiment, the shape of the central portion 42 of the diaphragm 40 is tapered with a thick center in FIG. In the same figure (C), the central part 42 is formed in a two-step staircase shape. In the same figure (d), the diaphragm 40 is formed with a thin taper gradually from the central part 42 to the periphery.Si In the case of diaslam, this taper can be formed by anisotropic etching.Also, electric discharge machining may also be used.In addition to the above embodiments, the central portion 42
However, it may have a staircase shape with two or more steps or a tapered structure. Also included in the present invention is a configuration in which nine arbitrary combinations of the above-mentioned staircase shape, taper, and the like shown in FIG.
(実施例6〜8)
第5〜7図は本発明の他の実施例を示す図である。図に
おいて、第1図と同一番号は同一構成要素を示している
。第5図の実施例は、第1図の実施例中央部42の二隅
にくびれ80が形成された点くおいて前記実施例と異な
る構成をもつ。(Examples 6 to 8) Figures 5 to 7 are diagrams showing other examples of the present invention. In the figure, the same numbers as in FIG. 1 indicate the same components. The embodiment shown in FIG. 5 has a different structure from the embodiment shown in FIG. 1 in that constrictions 80 are formed at the two corners of the central portion 42 of the embodiment shown in FIG.
第6,7図の実施例は、ゲージ抵抗1を薄肉の周辺部4
1にも置いたことf:@徴とする圧力センナの実施例で
あり、前者ではゲージ抵抗1がダイアフラム40の辺近
くに置かれている。後者では、ゲージ抵抗1をダイアフ
ラム40の中央近くに配置してbる。後者の場合、第3
図に明らかなように周辺部41におかれた抵抗の抵抗変
化率の値は中央部42に置かれたゲージ抵抗1と反対の
符号をもつ。また、位置による抵抗変化率の値の変化が
小さく、抵抗位置の目金せずれによる影響が小さbo
以上、本発明について例を挙げ詳細彦説明を行々った。In the embodiment shown in FIGS. 6 and 7, the gauge resistor 1 is connected to a thin peripheral portion 4.
This is an embodiment of a pressure sensor having the f:@ sign as shown in Fig. 1, and in the former, a gauge resistor 1 is placed near the side of the diaphragm 40. In the latter case, the gauge resistor 1 is placed near the center of the diaphragm 40. In the latter case, the third
As is clear from the figure, the value of the resistance change rate of the resistor placed in the peripheral portion 41 has an opposite sign to that of the gauge resistor 1 placed in the central portion 42. Further, the change in the value of the resistance change rate depending on the position is small, and the influence of the displacement of the eyepiece on the resistance position is small.bo Above, the present invention has been explained in detail by giving examples.
なお、本発明の構成は、前記実施例第1図のダイアフラ
ム40(周辺部41と中央部42を含む)を除く他の構
成要素について何ら制限されず、通常用いられる全ての
構成が本発明に含まれるつ
ま友、前記ダイアフラムを金属で構成し、該金属の表面
の一方、あるいは両側にストレンゲージを貼りりけ九シ
、金属あるいは半導体からなるストレンゲージを蒸着し
たシすること等によって、該ダイアフラムに印加された
該圧力を検出する構成、シリコン等半導体よりなる前記
ダイアフラムの表面をシリコン等の醗化戻、窒化膜等で
採掘し九構成、及び、該表面上に周辺回路を形成し念構
放も本発明に含まれる。Note that the configuration of the present invention is not limited in any way to other components other than the diaphragm 40 (including the peripheral portion 41 and the central portion 42) shown in FIG. The diaphragm may be made of metal, and a strain gauge may be pasted on one or both sides of the metal surface, or a strain gauge made of metal or semiconductor may be deposited on the diaphragm. a structure for detecting the pressure applied to the diaphragm; The present invention also includes radiation.
なお、上記実施例において中央部の領域および厚さを大
きくする程、当該ゲージ抵抗に働く応力の分布は緩やか
になシ、従がって、感度ばらつきが減少する。しかし、
この場合には、同時に当該応力の絶対値が減少すること
により、感度が小さく々る。従って、圧力センナを設計
する際には、以上の効果を考慮して、感度および感度ば
らつきを最適にするようにダイアフラム中央部の寸法を
決めなければならない。In addition, in the above embodiment, the larger the area and thickness of the central portion, the more gradual the distribution of stress acting on the gauge resistance becomes, and therefore the sensitivity variation is reduced. but,
In this case, the sensitivity decreases because the absolute value of the stress decreases at the same time. Therefore, when designing a pressure sensor, the dimensions of the central portion of the diaphragm must be determined in consideration of the above effects to optimize sensitivity and sensitivity variation.
(発明の効果)
以上、本発明の構成をとることにより、感度ばらつきの
少々い圧力センサを供給することが可能となった。本発
明による品質の向上および製造コストを低減することの
できる効果は大きいものである。(Effects of the Invention) As described above, by adopting the configuration of the present invention, it has become possible to provide a pressure sensor with little variation in sensitivity. The present invention has great effects in improving quality and reducing manufacturing costs.
第1図、第2図は本発明の実施例の構成を示す図で、第
3図は第2図A−A’に沿って生ずる本発明の実施例に
よる抵抗変化率の分布を示す図である。第4図葎)〜(
d)および第5〜7図は、本発明による他の実施例の構
成を示す図。
第8図、第9図は従来の圧力変換器の構成を示す図であ
・す、第10図は、第9図人−人′に沿って生ずる抵抗
変化率の値を示す図である。
1・・・ゲージ抵抗、 2・・・金属細線、3・−圧
力センサ、 4・・・ガラス、5・・・金・スズ等の
共晶合金、
6・−・パッケージ、 7・・・リード、8.12
・・・導通管、 9・−・キャップ、10.11・・
・気体、 13−・・ダイアフラム、14・・・支持
体、
30.60・・・ゲージ抵抗の置かれる位置、40・・
・ダイアフラム、 41・・・周辺部、42・・・中央
部、 80・・・くびれl−1\
3.い介=ヵ内原 曾1゛)
第1図
1 : ゲージA氏状 9 : 〒ヤヮア2
: 金A 細繊 11 : ラt イネ3
:圧力センサ 1z:4通管
4:力゛ラス、14:叉符俸
5:共晶合金 40: ディアフラム乙: ハーンケ
ーヅ 41:ff1Nρ、音P7:リード 42
:中大号
θ:4連1
第2図
兜4図
第5図
第4図
!1 41 411 and 2 are diagrams showing the configuration of an embodiment of the present invention, and FIG. 3 is a diagram showing a distribution of the resistance change rate according to the embodiment of the present invention, which occurs along the line A-A' in FIG. 2. be. Figure 4)~(
d) and FIGS. 5 to 7 are diagrams showing the configuration of other embodiments according to the present invention. FIGS. 8 and 9 are diagrams showing the configuration of a conventional pressure transducer, and FIG. 10 is a diagram showing the value of the rate of change in resistance occurring along the line ``P--P'' in FIG. 9. 1... Gauge resistor, 2... Fine metal wire, 3... Pressure sensor, 4... Glass, 5... Eutectic alloy such as gold, tin, etc., 6... Package, 7... Lead , 8.12
...Conducting pipe, 9...Cap, 10.11...
・Gas, 13-...Diaphragm, 14...Support, 30.60...Position where gauge resistance is placed, 40...
・Diaphragm, 41...Peripheral part, 42...Central part, 80...Constriction l-1\3. Isuke=Kanaihara So 1) Figure 1 1: Mr. Gage A's letter 9: Yawaa 2
: Gold A Fine 11 : Rat Rice 3
: Pressure sensor 1z: 4 pipes 4: force glass, 14: cross 5: eutectic alloy 40: diaphragm 2: hunkades 41: ff1Nρ, sound P7: lead 42
: Chuo University issue θ: 4 series 1 Figure 2 Kabuto 4 Figure 5 Figure 4! 1 41 41
Claims (1)
置かれるダイアフラムと、当該ダイアフラムの周囲を固
定する支持体とを備えた圧力センサにおいて、当該ダイ
アフラムの中央部が周辺部より厚く、少なくとも一個の
前記感圧素子が前記中央部に置かれることを特徴とする
圧力センサ。In a pressure sensor comprising a pressure sensitive element that responds to applied pressure, a diaphragm on which the pressure sensitive element is placed, and a support that fixes the periphery of the diaphragm, the central part of the diaphragm is thicker than the peripheral part, and at least A pressure sensor, wherein one of the pressure sensitive elements is placed at the center.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59277369A JPH0770737B2 (en) | 1984-12-27 | 1984-12-27 | Pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59277369A JPH0770737B2 (en) | 1984-12-27 | 1984-12-27 | Pressure sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61154179A true JPS61154179A (en) | 1986-07-12 |
JPH0770737B2 JPH0770737B2 (en) | 1995-07-31 |
Family
ID=17582561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59277369A Expired - Lifetime JPH0770737B2 (en) | 1984-12-27 | 1984-12-27 | Pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0770737B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014002150A1 (en) * | 2012-06-29 | 2014-01-03 | 株式会社デンソー | Pressure sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54162491A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Semiconductor pressure transducer |
JPS5688371A (en) * | 1979-12-20 | 1981-07-17 | Toshiba Corp | Semiconductor pressure converter |
JPS56133877A (en) * | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Semiconductor diaphragm type sensor |
JPS5882138A (en) * | 1981-11-11 | 1983-05-17 | Hitachi Ltd | Semiconductor measurement diaphragm |
-
1984
- 1984-12-27 JP JP59277369A patent/JPH0770737B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54162491A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Semiconductor pressure transducer |
JPS5688371A (en) * | 1979-12-20 | 1981-07-17 | Toshiba Corp | Semiconductor pressure converter |
JPS56133877A (en) * | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Semiconductor diaphragm type sensor |
JPS5882138A (en) * | 1981-11-11 | 1983-05-17 | Hitachi Ltd | Semiconductor measurement diaphragm |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014002150A1 (en) * | 2012-06-29 | 2014-01-03 | 株式会社デンソー | Pressure sensor |
US9513182B2 (en) | 2012-06-29 | 2016-12-06 | Denso Corporation | Pressure sensor having multiple piezoresistive elements |
Also Published As
Publication number | Publication date |
---|---|
JPH0770737B2 (en) | 1995-07-31 |
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