JPS61153918A - Manufacture of field emitter exhibiting highly stable electron emission characteristic - Google Patents
Manufacture of field emitter exhibiting highly stable electron emission characteristicInfo
- Publication number
- JPS61153918A JPS61153918A JP59275221A JP27522184A JPS61153918A JP S61153918 A JPS61153918 A JP S61153918A JP 59275221 A JP59275221 A JP 59275221A JP 27522184 A JP27522184 A JP 27522184A JP S61153918 A JPS61153918 A JP S61153918A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- field
- carbon film
- electron emission
- field emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高安定電子放射特性を示すフィールドエミッタ
ーの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a field emitter exhibiting highly stable electron emission characteristics.
フィールドエミッターからの放射電流は、高輝度、可干
渉性１点光源などの優れた性質を示す。The emitted current from the field emitter exhibits excellent properties such as high brightness and coherent single point light source.
これは電子１ｆＭｍ光機、低加速ＳＥＸ 、分析電子顕
微鏡などの電子源として重要である。This is important as an electron source for electron 1fMm optical equipment, low acceleration SEX, analytical electron microscopes, etc.
従来技術
従来、フィールドエミッターとしては、Ｗが実用化され
てきたが、このフィールドエミッターは電流の安定性に
問題があり、時間と共に大幅に減衰すると共に電流変動
も大きいので、広い応用を疎外している。Conventional technology Conventionally, W has been put into practical use as a field emitter, but this field emitter has a problem with current stability, and as it significantly attenuates over time and has large current fluctuations, it has been excluded from a wide range of applications. There is.
また炭化チタン単結晶からなるフィールドエミッターも
知られている。しかし、このフィールドエミッターから
の放射電子は、チップ先端近傍から放射状に放出され、
いくつかの電子ビーム塊に分れる問題点がある。Field emitters made of single crystal titanium carbide are also known. However, the radiated electrons from this field emitter are emitted radially from near the tip of the chip.
There is a problem in that the electron beam is divided into several clusters.
発明の目的
本発明は従来の炭化チタン単結晶からなるフィールドエ
ミッターの問題点をなくするためになされたもので、そ
の目的は電流安定性がよく、高輝度で電子放射特性の優
れたフィールドエミッターの製造方法を提供するにある
。Purpose of the Invention The present invention was made to eliminate the problems of conventional field emitters made of single crystal titanium carbide.The purpose of the present invention is to develop field emitters that have good current stability, high brightness, and excellent electron emission characteristics. To provide a manufacturing method.
発明の構成
本発明者らは前記目的を達成するため鋭意研究の結果、
炭化チタン単結晶エミッターを炭化水素ガス中で９００
〜１４００℃で熱処理して、該エミッターの表面に炭素
膜を形成させた後、超高真空下でＩＯＶ／ｃｍ以上の強
電界を印加すると、エミッションパターンが変化し、安
定な電流特性を示すフィールドエミッターが得られるこ
とを究明し得た。この知見に基いて本発明を完成した。Structure of the Invention As a result of intensive research to achieve the above object, the present inventors have
Titanium carbide single crystal emitter in hydrocarbon gas at 900 °C
After heat treatment at ~1400°C to form a carbon film on the surface of the emitter, when a strong electric field of IOV/cm or more is applied under ultra-high vacuum, the emission pattern changes and the field exhibits stable current characteristics. It has been determined that an emitter can be obtained. The present invention was completed based on this knowledge.
本発明の要旨は、炭化チタン単結晶エミッターを、炭化
水素ガス中で９００〜１４００℃で熱処理して、その表
面に炭素膜を形成させた後、超高真空は、０．２ Ｘ
Ｏ，２Ｘ ３■の直方体の先端を電解研磨法によシ約０
．１μｍの先端径とし、このエミッタる。例えば、Ｔｉ
、０ （１１０＞エミッターの場合は第１図に示すよう
な形状のものとなる。このＴｉＣ＜ １１０ ＞エミッ
ターからのエミッションパターンは第２図に示すように
なる。（なお、斜線部分は電子ビームのあたった部分を
示す。）これはチップ先端の＜ １００ ＞ 、 ＜
１１１ ＞の各結晶面から作られる尖った部分からのエ
ミッショ／に対応する。The gist of the present invention is to heat-treat a titanium carbide single crystal emitter at 900 to 1400°C in hydrocarbon gas to form a carbon film on its surface, and then apply an ultra-high vacuum of 0.2
The tip of the rectangular parallelepiped of O,2
．． This emitter has a tip diameter of 1 μm. For example, Ti
, 0 (110> emitter has a shape as shown in Figure 1. The emission pattern from this TiC <110> emitter is as shown in Figure 2. (The shaded area is the electron beam. ) This shows the area hit by <100> and <100> of the tip tip.
111> corresponds to the emission from the pointed part made from each crystal plane.
このＴｉＧのエミッションパターンは電界強度の大きい
個所からの電子のエミッションで説明できる。This emission pattern of TiG can be explained by the emission of electrons from locations where the electric field strength is large.
このようにして得られたＴｉＧ単結晶エミッターの表面
に炭素膜を形成させる。炭素膜の形成は、Ｔ１Ｇエミッ
ターを炭化水素ガス中で９００〜１４００Ｃで加熱する
ことＫよって得られる。その加熱時間は１００ Ｌ （
ラングミュア−、Ｌ＝ １Ｏ−６Ｔｏｒｒｘｓｅａ ）
以上とする。即ち、炭化水素ガスを超高真空装置に導入
し、真空度が５ ｘ １０−”Ｉ’Ｏｒｒの場合は２０
秒以上の処理時間が必要である。炭化水素ガスとしては
、エチレン、メタン等が挙げられる。しかしこれに限定
されるものではない。A carbon film is formed on the surface of the TiG single crystal emitter thus obtained. Formation of the carbon film is obtained by heating the T1G emitter in hydrocarbon gas at 900-1400C. The heating time is 100 L (
Langmuir, L=1O-6Torrxsea)
The above shall apply. That is, when hydrocarbon gas is introduced into an ultra-high vacuum apparatus and the degree of vacuum is 5 x 10-"I'Orr,
Processing time of seconds or more is required. Examples of the hydrocarbon gas include ethylene and methane. However, it is not limited to this.
このようにして表面に炭素膜を形成したチップ“から超
高真空下で全電流１０〜２０μＡで３０分以上電子ビー
ムを放射し、１０’Ｖ／ｅ１１以上の強電界を印加する
。これによシ、エミッションパターンは第２図から第３
図のものに変化する。In this way, an electron beam is emitted from the chip with the carbon film formed on its surface for more than 30 minutes at a total current of 10 to 20 μA under ultra-high vacuum, and a strong electric field of 10'V/e11 or more is applied. The emission pattern is shown in Figures 2 to 3.
Changes to the one shown.
表お、斜線部分が電子ビームのあった個所で、点線で示
す部分は清浄表面からのエミッションパターンを示す。In the table, the shaded area shows the location where the electron beam was applied, and the dotted line shows the emission pattern from the clean surface.
なお、炭化水素ガス中でのチップの加熱温度を９００℃
以下、 １４００℃以上にするとエミッションパターン
は第２図のままであり、第３図に示すパ゛膚−／には変
化しない。また電子放射特性も改善！１；
ｈｒ以下の優れた特性を示す。その電流特性は第４図に
示す通りであり、一定の電流値を示し極めて安定である
。Note that the heating temperature of the chip in hydrocarbon gas was 900°C.
Thereafter, when the temperature is increased to 1400 DEG C. or higher, the emission pattern remains as shown in FIG. 2 and does not change to the pattern shown in FIG. 3. Also, the electron emission characteristics have been improved! 1; Shows excellent characteristics of hr or less. Its current characteristics are as shown in FIG. 4, and it exhibits a constant current value and is extremely stable.
この実験条件は真空度３．５ Ｘ １０” ＴＯｒｒ
、 印加電圧１５００ Ｖで行ったものである。The experimental conditions were a vacuum of 3.5 x 10” TOrr.
, with an applied voltage of 1500 V.
実施例
先端径０．１μｍのＴｉｅｏ、、６＜ １１０ ） フ
ィールドエミッターを超高真空下にセットし、１５００
℃に７ラツシユ加熱した。この真空系にエチレンガスを
導入し、５Ｘ１０ ＴＯｒｒの真空度にした後、１１
００℃で３０分間加熱してチップ表面に炭素膜を形成さ
せ九。この後、３．５ ｘ １０−” Ｔｏｒｒの真空
下で全電流１０μムを３０分以上放射しく １０’、
Ｖ ／ ｃｍ・以上の強電界の印加）続けてエミッショ
ンパタンを変化させた。Example A field emitter with a tip diameter of 0.1 μm, 6 < 110) was set under ultra-high vacuum, and
It was heated to 7 degrees Celsius. After introducing ethylene gas into this vacuum system and making the vacuum level 5X10 Torr,
9. Heat at 00°C for 30 minutes to form a carbon film on the chip surface. After this, a total current of 10 μm was irradiated for over 30 minutes under a vacuum of 3.5 x 10-” Torr.
Application of a strong electric field of V/cm or more) The emission pattern was then changed.
上記製法によって得たフィールドエミッターの第１図は
Ｔｉｅ （１１０＞エミッターの１５００℃フラッシュ
加熱後の先端形状、第２図は第１図のエミッターからの
エミッションパターン、第３図は第１図のエミッターチ
ップの表面に炭化皮膜を形成させた後のエミッションパ
ターン、第４図は本発明の方法で製造したエミッターの
全電流と時間との関係図であシ、この時の実験条件は真
空度３．５ＸＩＯＴｏｒｒ、印加電圧１５００ Ｖであ
る。Figure 1 of the field emitter obtained by the above manufacturing method is the tip shape of the Tie (110> emitter after flash heating at 1500°C, Figure 2 is the emission pattern from the emitter in Figure 1, and Figure 3 is the emitter in Figure 1. The emission pattern after forming a carbonized film on the surface of the chip, and FIG. 4 is a graph showing the relationship between the total current and time of the emitter manufactured by the method of the present invention, and the experimental conditions at this time were a vacuum degree of 3. 5XIO Torr, applied voltage 1500V.
企電 麦（μＡ）Corporate power (μA)
Claims (1)
０〜１４００℃で熱処理して、その表面に炭素膜を形成
させた後、超高真空下で１０＾７Ｖ／ｃｍ以上の強電界
を印加することを特徴とする高安定電子放射特性を示す
フィールドエミッターの製造法。A titanium carbide single crystal emitter was heated to 90°C in hydrocarbon gas.
A field exhibiting highly stable electron emission characteristics characterized by applying a strong electric field of 10^7 V/cm or more under ultra-high vacuum after heat treatment at 0 to 1400°C to form a carbon film on the surface. Emitter manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275221A JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59275221A JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61153918A true JPS61153918A (en) | 1986-07-12 |
| JPH0434253B2 JPH0434253B2 (en) | 1992-06-05 |
Family
ID=17552389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59275221A Granted JPS61153918A (en) | 1984-12-27 | 1984-12-27 | Manufacture of field emitter exhibiting highly stable electron emission characteristic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61153918A (en) |
-
1984
- 1984-12-27 JP JP59275221A patent/JPS61153918A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434253B2 (en) | 1992-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |