US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
US7101795B1
(en)
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
US7405158B2
(en)
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
US6551929B1
(en)
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
US6998579B2
(en)
|
2000-12-29 |
2006-02-14 |
Applied Materials, Inc. |
Chamber for uniform substrate heating
|
US6951804B2
(en)
|
2001-02-02 |
2005-10-04 |
Applied Materials, Inc. |
Formation of a tantalum-nitride layer
|
US7211144B2
(en)
|
2001-07-13 |
2007-05-01 |
Applied Materials, Inc. |
Pulsed nucleation deposition of tungsten layers
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
US7085616B2
(en)
|
2001-07-27 |
2006-08-01 |
Applied Materials, Inc. |
Atomic layer deposition apparatus
|
US6936906B2
(en)
|
2001-09-26 |
2005-08-30 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
US7049226B2
(en)
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
US7204886B2
(en)
|
2002-11-14 |
2007-04-17 |
Applied Materials, Inc. |
Apparatus and method for hybrid chemical processing
|
WO2003065424A2
(en)
|
2002-01-25 |
2003-08-07 |
Applied Materials, Inc. |
Apparatus for cyclical deposition of thin films
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
US6833161B2
(en)
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
US6972267B2
(en)
|
2002-03-04 |
2005-12-06 |
Applied Materials, Inc. |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
|
US7439191B2
(en)
|
2002-04-05 |
2008-10-21 |
Applied Materials, Inc. |
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
|
US7186385B2
(en)
|
2002-07-17 |
2007-03-06 |
Applied Materials, Inc. |
Apparatus for providing gas to a processing chamber
|
US6915592B2
(en)
|
2002-07-29 |
2005-07-12 |
Applied Materials, Inc. |
Method and apparatus for generating gas to a processing chamber
|
US20040069227A1
(en)
|
2002-10-09 |
2004-04-15 |
Applied Materials, Inc. |
Processing chamber configured for uniform gas flow
|
US7262133B2
(en)
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
US20040198069A1
(en)
|
2003-04-04 |
2004-10-07 |
Applied Materials, Inc. |
Method for hafnium nitride deposition
|
WO2004113585A2
(en)
|
2003-06-18 |
2004-12-29 |
Applied Materials, Inc. |
Atomic layer deposition of barrier materials
|
US7464917B2
(en)
|
2005-10-07 |
2008-12-16 |
Appiled Materials, Inc. |
Ampoule splash guard apparatus
|