JPS61150280A - 縦型ｍｏｓトランジスタ - Google Patents

縦型ｍｏｓトランジスタ

Info

Publication number
JPS61150280A
JPS61150280A JP59272603A JP27260384A JPS61150280A JP S61150280 A JPS61150280 A JP S61150280A JP 59272603 A JP59272603 A JP 59272603A JP 27260384 A JP27260384 A JP 27260384A JP S61150280 A JPS61150280 A JP S61150280A
Authority
JP
Japan
Prior art keywords
mos transistor
resistance
vertical mos
present
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59272603A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436584B2 (enExample
Inventor
Akiyuki Kawachi
川地　明幸
Kinshiro Morimoto
森本　欣司郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP59272603A priority Critical patent/JPS61150280A/ja
Publication of JPS61150280A publication Critical patent/JPS61150280A/ja
Publication of JPH0436584B2 publication Critical patent/JPH0436584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
JP59272603A 1984-12-24 1984-12-24 縦型ｍｏｓトランジスタ Granted JPS61150280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272603A JPS61150280A (ja) 1984-12-24 1984-12-24 縦型ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272603A JPS61150280A (ja) 1984-12-24 1984-12-24 縦型ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS61150280A true JPS61150280A (ja) 1986-07-08
JPH0436584B2 JPH0436584B2 (enExample) 1992-06-16

Family

ID=17516225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272603A Granted JPS61150280A (ja) 1984-12-24 1984-12-24 縦型ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS61150280A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02126682A (ja) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp 半導体装置およびその製造方法
US4952992A (en) * 1987-08-18 1990-08-28 Siliconix Incorporated Method and apparatus for improving the on-voltage characteristics of a semiconductor device
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
EP1085577A3 (en) * 1999-09-13 2001-11-21 Shindengen Electric Manufacturing Company, Limited Power field-effect transistor having a trench gate electrode and method of making the same
JP2002246595A (ja) * 2001-02-19 2002-08-30 Shindengen Electric Mfg Co Ltd トランジスタ
EP1184908A3 (en) * 2000-08-30 2007-08-01 Shindengen Electric Manufacturing Company, Limited Field effect transistor
JP2014187071A (ja) * 2013-03-21 2014-10-02 Shindengen Electric Mfg Co Ltd Ｉｇｂｔ及びｉｇｂｔの製造方法
CN108695155A (zh) * 2018-05-30 2018-10-23 厦门芯代集成电路有限公司 一种能精确控制igbt空穴载流子注入的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6443029B2 (ja) * 2014-12-16 2018-12-26 富士電機株式会社 半導体装置および半導体パッケージ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952992A (en) * 1987-08-18 1990-08-28 Siliconix Incorporated Method and apparatus for improving the on-voltage characteristics of a semiconductor device
JPH02126682A (ja) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
EP1085577A3 (en) * 1999-09-13 2001-11-21 Shindengen Electric Manufacturing Company, Limited Power field-effect transistor having a trench gate electrode and method of making the same
US6737704B1 (en) 1999-09-13 2004-05-18 Shindengen Electric Manufacturing Co., Ltd. Transistor and method of manufacturing the same
EP1184908A3 (en) * 2000-08-30 2007-08-01 Shindengen Electric Manufacturing Company, Limited Field effect transistor
JP2002246595A (ja) * 2001-02-19 2002-08-30 Shindengen Electric Mfg Co Ltd トランジスタ
JP2014187071A (ja) * 2013-03-21 2014-10-02 Shindengen Electric Mfg Co Ltd Ｉｇｂｔ及びｉｇｂｔの製造方法
CN108695155A (zh) * 2018-05-30 2018-10-23 厦门芯代集成电路有限公司 一种能精确控制igbt空穴载流子注入的制造方法

Also Published As

Publication number Publication date
JPH0436584B2 (enExample) 1992-06-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term