JPS61150119A - Electrode manufacture of thin film magnetic head - Google Patents

Electrode manufacture of thin film magnetic head

Info

Publication number
JPS61150119A
JPS61150119A JP28081684A JP28081684A JPS61150119A JP S61150119 A JPS61150119 A JP S61150119A JP 28081684 A JP28081684 A JP 28081684A JP 28081684 A JP28081684 A JP 28081684A JP S61150119 A JPS61150119 A JP S61150119A
Authority
JP
Japan
Prior art keywords
film
conductor layer
magnetic head
conductor
photo resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28081684A
Other languages
Japanese (ja)
Inventor
Mikio Matsuzaki
幹男 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP28081684A priority Critical patent/JPS61150119A/en
Publication of JPS61150119A publication Critical patent/JPS61150119A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the reliability by providing a process filling a high polymer resin to a lower part of an overhang of a conductor layer formed by the electrolytic plating method so as to improve the corrosion proof of the like. CONSTITUTION:A background metallic film 13 for conductor plating is formed to an electrode lead conductor film 12 formed as a pattern to a base 11. Then a positive photo resist film 14 if formed as a pattern on the film 13 so that the surface of the middle part of the film 13 is exposed. Then a conductor layer is formed to the exposed part of the film 13 by using the photo resist film 14 as a mask by the elecrtrolytic plating. The over hang part 16 formed around the bottom of the conductor layer 15 in this case is filled by the photo resist film 14. Then the photo resist film 14 is removed by using oxygen ions by the ion etching method,the photo resist film 14 beneath the conductor layer 15 is left, the other exposed part is eliminated by a self-alignment, the oxide film on the surface of the plating background metallic film 13 and the conductor layer 15 is removed by ion milling, and the protection film is covered to the surface.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は、a膜磁気ヘッドの電極製造方法に係り、特に
薄膜磁気ヘッドの形成時と同時に形成される電極の製造
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing an electrode for an a-film magnetic head, and more particularly to a method for manufacturing an electrode that is formed simultaneously with the formation of a thin-film magnetic head.

[発明の技術的背景とその問題点] 一般に薄膜技術により形成される薄膜磁気ヘッドは、第
2図に示す如く、基体であるウェハー1と該ウェハー1
に設けられる磁気ヘッド素子10と電極20とから構成
されている。前記電極20は、磁気ヘッド素子10の形
成時と同時にi#II!技術により形成され、外部の端
子間と導通を行うためのものである。
[Technical background of the invention and its problems] Generally, a thin film magnetic head formed by thin film technology consists of a wafer 1 as a base and a wafer 1 as shown in FIG.
It is composed of a magnetic head element 10 and an electrode 20 provided in the magnetic head element 10 and the electrode 20. i#II! at the same time when the magnetic head element 10 is formed. It is formed by technology and is used to establish continuity between external terminals.

従来技術による前記電極20の製造方法を第3図を用い
て説明する。第3図(a)乃至(C)は従来技術による
電極の製造工程を示す電極の断面図である。この製造方
法は、まず第3図(a)に示す如くウェハー1上に磁気
ヘッド素子からの電極引出し用導体2を形成する。次に
エレクトロフォーミングの際に使用する酸性またはアル
カリ性の薬品から、磁気ヘッド素子を保護するため第1
保護Il!3を形成する。次にエレクトロフォーミング
の際の通電用下地となる銅114を真空蒸着またはスパ
ッタリング法で形成した後、フォトレジスト5を2〜1
0μmの膜厚に形成し、所定の寸法にパターンニングす
る。次に安定して厚膜が得られる銅またはニッケルメッ
キ液を用い20〜40μmWA厚の金属導体6をエレク
トロフォーミング法により形成する。この場合、導体6
の膜厚が7オトレジスト5の膜厚と同程度の数値までは
、導体6の形状は、フォトレジスト5のパターンニング
形状にならって形成される。しかし導体6の膜厚が7オ
トレジスト5の膜厚より厚く形成される場合、導体6の
析出は、膜厚方向だけでなく電気メッキの特徴として、
膜厚方向と垂直に横方向へも導体6の析出が第3図(a
)に示す如く起る。
A method of manufacturing the electrode 20 according to the prior art will be explained with reference to FIG. FIGS. 3(a) to 3(C) are cross-sectional views of an electrode showing the manufacturing process of the electrode according to the prior art. In this manufacturing method, first, a conductor 2 for leading out an electrode from a magnetic head element is formed on a wafer 1, as shown in FIG. 3(a). Next, to protect the magnetic head element from acidic or alkaline chemicals used during electroforming,
Protection Il! form 3. Next, after forming copper 114, which will serve as a base for current conduction during electroforming, by vacuum evaporation or sputtering, photoresist 5 is applied for 2 to 1 minutes.
It is formed to a film thickness of 0 μm and patterned to a predetermined dimension. Next, a metal conductor 6 having a thickness of 20 to 40 μm WA is formed by electroforming using a copper or nickel plating solution that can stably form a thick film. In this case, conductor 6
The shape of the conductor 6 is formed following the patterning shape of the photoresist 5 until the film thickness of the conductor 6 is approximately the same as the film thickness of the photoresist 5. However, when the film thickness of the conductor 6 is formed to be thicker than the film thickness of the photoresist 5, the conductor 6 is deposited not only in the film thickness direction but also as a characteristic of electroplating.
The conductor 6 is also deposited in the lateral direction perpendicular to the film thickness direction as shown in Figure 3 (a).
) occurs as shown in

この横方向への析出は、膜厚方向の析出しとほぼ1:1
で進行し、20〜40μmの導体6をエレクトロフォー
ミング方で形成した場合には、10〜50μmのオーバ
ーハングが生じることになる。
This precipitation in the lateral direction is approximately 1:1 with the precipitation in the film thickness direction.
If the conductor 6 is formed by electroforming with a thickness of 20 to 40 μm, an overhang of 10 to 50 μm will occur.

フォトレジスト5を除去した際、オーバーハング部の下
には、フォトレジスト膜厚相当の隙間が生じることにな
る。第3図(b)に示すようにその後に真空蒸着または
スパッタリング法によって無機保護膜7を形成した場合
オーバーハング部下の隙間を埋めることができず、導体
6の周囲の無機保護膜7に空間8及びフレバス9が生じ
る。この欠陥は、第3図(C)に示すように無機保護膜
7の表面を機械加工して導体6を露出させた場合に、電
極部の周囲に現れ、耐食性の面から信頼性の低下を招く
原因となっている。
When the photoresist 5 is removed, a gap equivalent to the thickness of the photoresist film will be created under the overhang portion. As shown in FIG. 3(b), if the inorganic protective film 7 is subsequently formed by vacuum evaporation or sputtering, the gap under the overhang cannot be filled, and the inorganic protective film 7 around the conductor 6 has a space 8. and frebas 9 occur. This defect appears around the electrode section when the surface of the inorganic protective film 7 is machined to expose the conductor 6 as shown in FIG. It is the cause of the invitation.

[発明の目的] 本発明は前記従来技術の問題点を除去して、空洞あるい
はフレバスの発生を防止し、耐食性の優れた薄膜磁気ヘ
ッドの電極の製造方法を提供することを目的とするもの
である。
[Object of the Invention] It is an object of the present invention to provide a method for manufacturing an electrode for a thin film magnetic head that eliminates the problems of the prior art, prevents the occurrence of cavities or freckles, and has excellent corrosion resistance. be.

[発明の概[1 前記目的を達成するための本発明の概要は、電解メッキ
法で形成する導体層のオーバーハング部の下部に高分子
樹脂が充填形成される工程を含むことを特徴とするもの
である。
[Summary of the Invention [1] A summary of the present invention for achieving the above object is characterized in that it includes a step of filling and forming a polymer resin in the lower part of an overhang portion of a conductor layer formed by an electrolytic plating method. It is something.

[発明の実施例] 以下第1図(a)乃至(e)に本発明の一実施例を工程
順に示して説明する。
[Embodiment of the Invention] An embodiment of the present invention will be described below with reference to FIGS. 1(a) to 1(e) showing the steps in the order of steps.

先ず、基体11上にはパターン形成された電極引出し導
体112上に導体のメッキのための下地金属II (C
u/T i (1000^/200^))13を形成す
る(第1図(a))。
First, a base metal II (C
u/T i (1000^/200^)) 13 is formed (FIG. 1(a)).

次に下地金属1113上にポジ型フォトレジスト膜14
を下地金属膜13の中間部表面が露出するようにして1
〜10μm程度の厚さでパターン形成する(第1図(b
))。
Next, a positive photoresist film 14 is placed on the base metal 1113.
1 so that the intermediate surface of the base metal film 13 is exposed.
Form a pattern with a thickness of ~10 μm (see Figure 1(b)
)).

電解メッキにより前記パターンニングされたフォトレジ
スト膜14をマスクとして下地金属膜13の露出部上に
導体層(銅)15を20〜40μmの厚さで形成する。
Using the patterned photoresist film 14 as a mask, a conductor layer (copper) 15 is formed on the exposed portion of the underlying metal film 13 to a thickness of 20 to 40 μm by electrolytic plating.

このときの導体層15の底部周辺にはオーバーハング部
分16が形成されているが、その部分はフォトレジスト
1114で充填された状態になっている(第1図(C)
)。
At this time, an overhang portion 16 is formed around the bottom of the conductor layer 15, and this portion is filled with photoresist 1114 (see FIG. 1(C)).
).

次にフォトレジスト膜14をリアクティブイオンエツチ
ング法を用いて一酸素イオンにより除去する。このエツ
チング方法は基板膜[N極と対向電極との間に適当な電
圧を印加することよりエツチングが可能であるため、導
体層15の直下に位置するフォトレジスト膜14は残り
、他の露出している部分°がセルフアライメントにより
除去されることになる(第1図(d))。なお、本工程
でリアクティブイオンミリング法により酸素イオンによ
るミリングを行うことによっても同様の効果が得られる
Next, the photoresist film 14 is removed using monooxygen ions using a reactive ion etching method. In this etching method, etching is possible by applying an appropriate voltage between the substrate film [N electrode and the counter electrode, so the photoresist film 14 located directly under the conductor layer 15 remains and other exposed areas are The portion that is located on the surface is removed by self-alignment (FIG. 1(d)). Note that the same effect can also be obtained by performing milling with oxygen ions using a reactive ion milling method in this step.

その後熱処理を行うことにより、導体層15の底部オー
バーハング部16直下の7オトレジスト膜が熱硬化され
て、高分子樹脂がオーバーハング部に充填された状態と
なる。
Thereafter, by performing heat treatment, the 7 photoresist films directly under the bottom overhang portion 16 of the conductor layer 15 are thermally cured, and the overhang portion is filled with polymer resin.

次に、イオンミリングによりメッキ下地金属膜13を除
去する。この際に前記熱処理工程で導体115の表面に
形成された酸化膜も同時に除去されることになる(第1
図(e))。
Next, the plating base metal film 13 is removed by ion milling. At this time, the oxide film formed on the surface of the conductor 115 in the heat treatment step is also removed at the same time (first
Figure (e)).

最後に表面を保護膜で覆って完成する。Finally, the surface is covered with a protective film.

本発明は前記実施例に限定されず、種々の変形が可能で
あ・る。
The present invention is not limited to the embodiments described above, and various modifications are possible.

例えば前記実施例では高分子樹脂としてポジ型フォトレ
ジスト膜を用いたが、この他にネガ型フオドレジスト躾
、ポリイミド等を用いることもできる。
For example, in the above embodiments, a positive photoresist film was used as the polymer resin, but other materials such as negative photoresist, polyimide, etc. may also be used.

[発明の効果] 以上詳述した本発明によれば、導体層のオーバーハング
部に^分子樹脂を充填することができるのでi1g!磁
気ヘッドの耐食性などの信頼性の向上を図ることができ
る。また、かかる目的を達成するために工程を増加する
こともなく、またマスク合せの精密さも要求されないの
でパターン設計の余裕度を確保できるという優れた効果
もある。
[Effects of the Invention] According to the present invention described in detail above, the overhang portion of the conductor layer can be filled with the molecular resin. It is possible to improve reliability such as corrosion resistance of the magnetic head. In addition, there is no need to increase the number of steps in order to achieve this objective, and precision in mask alignment is not required, so there is an excellent effect that a degree of latitude in pattern design can be ensured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)乃至(e)は本発明の一実施例を工程順に
示す断面図、第2図は薄膜磁気ヘッドの構造を示す斜視
図、第3図(a)乃至(C)は従来技術の製造方法を工
程順に示す断面図である。 11・・・基体、12・・・引出し導体層、13・・・
下地金属層、14・・・レジスト躾、15・・・導体■
、16・・・オーバーハング部。 代理人 弁理士 三  澤  正  義i)     
             −第1図 手続補正書 昭和60年7月23日 昭和59年特許願第280816号 2、発明の名称 薄膜磁気ヘッドの電極製造方法 3、補正をする者 事件との関係  特許出願人 5、補正命令の日付  自発 6、補正の対象 明細書の発明の詳細な説明の欄 号り紙 とにより」の後ろに「異方性」を挿入する。 以上
FIGS. 1(a) to (e) are cross-sectional views showing an embodiment of the present invention in the order of steps, FIG. 2 is a perspective view showing the structure of a thin film magnetic head, and FIGS. 3(a) to (C) are conventional FIG. 3 is a cross-sectional view showing the manufacturing method of the technology in the order of steps. 11...Base body, 12...Leader conductor layer, 13...
Base metal layer, 14...Resist layer, 15...Conductor ■
, 16...overhang part. Agent Patent Attorney Masayoshi Misawai)
- Figure 1 Procedural Amendment Document July 23, 1985 Patent Application No. 280816 of 1988 2 Title of Invention Method for Manufacturing Electrodes for Thin Film Magnetic Heads 3 Person Who Makes Amendment Relationship with the Case Patent Applicant 5 Amendment Date of order Voluntary action 6. Insert "anisotropy" after the column heading of the detailed description of the invention in the specification subject to amendment. that's all

Claims (2)

【特許請求の範囲】[Claims] (1)磁気ヘッド素子及び該磁気ヘッド素子の信号を外
部と連結する電極を薄膜技術により基体上に形成する薄
膜磁気ヘッドの電極製造方法において、電解メッキ法で
形成する導体層のオーバーハング部の下部に高分子樹脂
が充填形成される工程を含むことを特徴とする薄膜磁気
ヘッドの電極製造方法。
(1) In an electrode manufacturing method for a thin-film magnetic head in which a magnetic head element and an electrode for connecting signals of the magnetic head element to the outside are formed on a substrate by thin-film technology, an overhang portion of a conductor layer formed by electrolytic plating is used. 1. A method for manufacturing an electrode for a thin-film magnetic head, the method comprising the step of filling and forming a polymer resin in the lower part.
(2)導体層を電解メッキする際に用いられるマスク層
を導体層のオーバーハング部分下部を残してセルフアラ
イメントな異方性エッチングによりエッチング除去する
ことにより高分子樹脂層を形成することを特徴とする特
許請求の範囲第1項記載の薄膜磁気ヘッドの電極製造方
法。
(2) The polymer resin layer is formed by etching away the mask layer used when electroplating the conductor layer by self-aligned anisotropic etching, leaving the lower part of the overhang of the conductor layer. A method for manufacturing an electrode for a thin film magnetic head according to claim 1.
JP28081684A 1984-12-24 1984-12-24 Electrode manufacture of thin film magnetic head Pending JPS61150119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28081684A JPS61150119A (en) 1984-12-24 1984-12-24 Electrode manufacture of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28081684A JPS61150119A (en) 1984-12-24 1984-12-24 Electrode manufacture of thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS61150119A true JPS61150119A (en) 1986-07-08

Family

ID=17630373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28081684A Pending JPS61150119A (en) 1984-12-24 1984-12-24 Electrode manufacture of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS61150119A (en)

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